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    Nonvolatile semiconductor memory device
    14.
    发明授权
    Nonvolatile semiconductor memory device 有权
    非易失性半导体存储器件

    公开(公告)号：US08339862B2

    公开(公告)日：2012-12-25

    申请号：US12343552

    申请日：2008-12-24

    申请人： Natsuo Aiika ,  Shoii Shukuri ,  Satoshi Shimizu ,  Taku Ogura

    发明人： Natsuo Aiika ,  Shoii Shukuri ,  Satoshi Shimizu ,  Taku Ogura

    IPC分类号： G11C16/06 ,  G11C11/34 ,  H01L29/792

    CPC分类号： G11C16/10 ,  G11C16/0483 ,  G11C16/12 ,  H01L27/115 ,  H01L27/11524

    摘要： According to an aspect of the present invention, it is provided: a nonvolatile semiconductor memory device comprising: a plurality of bit lines arranged in a first direction; a plurality of source lines arranged in the first direction, the plurality of source lines being parallel to the plurality of bit lines, the plurality of source lines being distinct from the plurality of bit lines; a plurality of memory gate lines arranged in a second direction perpendicular to the first direction; a plurality of memory cells arranged in a matrix, each of the plurality of memory cells including a p type MIS nonvolatile transistor having a first terminal, a second terminal, a channel between the first terminal and the second terminal, a gate insulation film formed on the channel, a gate electrode connected to one corresponding memory gate line of the plurality of memory gate lines, and a carrier storage layer formed between the gate insulation film and the gate electrode, the first terminal being connected to one corresponding bit line of the plurality of bit lines and the second terminal being connected to one corresponding source line of the plurality of source lines.

    摘要翻译： 根据本发明的一个方面，提供一种非易失性半导体存储器件，包括：沿第一方向布置的多个位线; 沿所述第一方向布置的多条源极线，所述多条源极线与所述多个位线平行，所述多个源极线与所述多个位线不同; 沿垂直于第一方向的第二方向布置的多个存储栅极线; 多个存储单元，以矩阵形式布置，所述多个存储单元中的每一个包括具有第一端子，第二端子，第一端子和第二端子之间的通道的ap型MIS非易失性晶体管，形成在栅极绝缘膜上的栅极绝缘膜 连接到所述多个存储栅极线中的一个对应的存储栅极线的栅极，以及形成在所述栅极绝缘膜和所述栅电极之间的载流子存储层，所述第一端子连接到所述多个栅极线中的一个相应的位线 位线，并且所述第二端子连接到所述多个源极线中的一个对应的源极线。

    Non-volatile semiconductor memory device
    15.
    发明授权
    Non-volatile semiconductor memory device 有权
    非易失性半导体存储器件

    公开(公告)号：US08106443B2

    公开(公告)日：2012-01-31

    申请号：US12246193

    申请日：2008-10-06

    申请人： Natsuo Ajika ,  Shoji Shukuri ,  Satoshi Shimizu ,  Taku Ogura

    发明人： Natsuo Ajika ,  Shoji Shukuri ,  Satoshi Shimizu ,  Taku Ogura

    IPC分类号： H01L29/792 ,  H01L21/336

    CPC分类号： H01L27/11568 ,  G11C16/0441 ,  G11C16/0491 ,  H01L21/26586 ,  H01L29/792

    摘要： A non-volatile semiconductor device includes an n type well formed in a semiconductor substrate having a surface, the surface having a plurality of stripe shaped grooves and a plurality of stripe shaped ribs, a plurality of stripe shaped p type diffusion regions formed in upper parts of each of the plurality of ribs, the plurality of stripe shaped p type diffusion regions being parallel to a longitudinal direction of the ribs, a tunneling insulation film formed on the grooves and the ribs, a charge storage layer formed on the tunneling insulating film, a gate insulation film formed on the charge storage layer, and a plurality of stripe shaped conductors formed on the gate insulating film, the plurality of stripe shaped conductors arranged in a direction intersecting the longitudinal direction of the ribs with a predetermined interval wherein an impurity diffusion structure in the ribs are asymmetric.

    摘要翻译： 非易失性半导体器件包括在具有表面的半导体衬底中形成的n型阱，表面具有多个条形槽和多个条状肋，多个条形p型扩散区形成在上部 所述多个条状p型扩散区域与所述肋的长度方向平行，形成在所述槽和所述肋上的隧道绝缘膜，形成在所述隧道绝缘膜上的电荷存储层， 形成在电荷存储层上的栅极绝缘膜和形成在栅极绝缘膜上的多个条状导体，所述多个条状导体沿着与肋的纵向相交的方向以预定间隔布置，其中杂质扩散 肋骨中的结构是不对称的。

    MAMMOGRAPHY APPARATUS
    18.
    发明申请
    MAMMOGRAPHY APPARATUS 有权
    摄影装置

    公开(公告)号：US20110222652A1

    公开(公告)日：2011-09-15

    申请号：US13114144

    申请日：2011-05-24

    申请人： Osamu Tsujii ,  Masakazu Morishita ,  Masahiko Okunuki ,  Satoshi Shimizu

    发明人： Osamu Tsujii ,  Masakazu Morishita ,  Masahiko Okunuki ,  Satoshi Shimizu

    IPC分类号： A61B6/00

    CPC分类号： A61B5/0035 ,  A61B5/0075 ,  A61B5/0091 ,  A61B5/4312 ,  A61B5/708 ,  A61B6/0414 ,  A61B6/4035 ,  A61B6/4233 ,  A61B6/4291 ,  A61B6/4417 ,  A61B6/463 ,  A61B6/502 ,  A61B6/5247 ,  A61B6/542 ,  A61B2562/17

    摘要： A mammography apparatus includes a detector that detects X-rays transmitted through a breast, and an optically transparent or semitransparent pressing panel for pressing the breast. The apparatus further includes a near infrared ray source that provided between the X-ray source and the pressing panel and arranged in a two-dimensional shape in alignment with the pressing panel, and that is movable between a first position in close contact with the pressing panel and a second position outside an X-ray image capture region. Near infrared image capture is carried out using the near infrared ray source by causing the near infrared ray source to be in the first position, and the near infrared ray source is caused to retract to the second position when carrying out X-ray image capture using the X-ray source.

    摘要翻译： 乳房摄影装置包括检测透过乳房的X射线检测器和用于按压乳房的光学透明或半透明按压面板。 该装置还包括近红外线源，其设置在X射线源和按压面板之间，并且与按压面板对准地配置成二维形状，并且能够在与按压面紧密接触的第一位置之间移动 面板和X射线图像捕获区域外的第二位置。 通过使近红外线源处于第一位置，使用近红外线源进行近红外图像捕捉，并且在进行X射线图像捕获时使近红外线源退回至第二位置 X射线源。