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    BIT-PATTERNED MEDIA WITH ANTIFERROMAGNETIC SHELL
    11.
    发明申请
    BIT-PATTERNED MEDIA WITH ANTIFERROMAGNETIC SHELL 有权
    具有抗病毒壳体的双向图形介质

    公开(公告)号：US20130206722A1

    公开(公告)日：2013-08-15

    申请号：US13835397

    申请日：2013-03-15

    Applicant: Seagate Technology, LLC

    Inventor： Kaizhong Gao ,  Haiwen Xi ,  Song Xue

    IPC: G11B5/855

    CPC classification number: G11B5/855 ,  B82Y10/00 ,  G11B5/743 ,  G11B5/746 ,  G11B5/82 ,  H01F10/002 ,  H01L21/02112 ,  H01L29/82 ,  Y10T428/115

    Abstract: A method of producing bit-patterned media is provided whereby a shell structure is added on a bit-patterned media dot. The shell may be an antiferromagnetic material that will help stabilize the magnetization configuration at the remanent state due to exchange coupling between the dot and its shell. Therefore, this approach also improves the thermal stability of the media dot and helps each individual media dot maintain a single domain state.

    Abstract translation: 提供了一种生产钻头图案化介质的方法，其中壳结构被添加在钻头图案化介质点上。 壳体可以是反铁磁材料，其将由于点和其壳体之间的交换耦合而有助于在剩余状态下稳定磁化结构。 因此，这种方法还可以提高介质点的热稳定性，并帮助各个介质点维持单一的畴状态。

    MEMORY WITH SEPARATE READ AND WRITE PATHS
    12.
    发明申请
    MEMORY WITH SEPARATE READ AND WRITE PATHS 有权
    具有单独读取和写入数据的存储器

    公开(公告)号：US20130188419A1

    公开(公告)日：2013-07-25

    申请号：US13785525

    申请日：2013-03-05

    Applicant: SEAGATE TECHNOLOGY LLC

    Inventor： Haiwen Xi ,  Hongyue Liu ,  Michael Xuefei Tang ,  Antoine Khoueir ,  Song S. Xue

    IPC: G11C11/16

    CPC classification number: G11C11/161 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

    Abstract: A memory unit includes a giant magnetoresistance cell electrically coupled between a write bit line and a write source line. The giant magnetoresistance cell includes a free magnetic layer. A magnetic tunnel junction data cell is electrically coupled between a read bit line and a read source line. The magnetic tunnel junction data cell includes the free magnetic layer. A write current passes through the giant magnetoresistance cell to switche the giant magnetoresistance cell between a high resistance state and a low resistance state. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by magnetostatic coupling with the giant magnetoresistance cell, and be read by a read current passing though the magnetic tunnel junction data cell.

    Abstract translation: 存储单元包括电耦合在写位线和写入源线之间的巨磁电阻单元。 巨磁电阻单元包括自由磁性层。 磁性隧道结数据单元电耦合在读取位线和读取源极线之间。 磁性隧道结数据单元包括自由磁性层。 写入电流通过巨磁电阻单元，以在高电阻状态和低电阻状态之间切换巨磁电阻单元。 磁隧道结数据单元被配置为通过与巨磁电阻单元的静磁耦合在高电阻状态和低电阻状态之间切换，并且通过通过磁性隧道结数据单元的读取电流来读取。

    Method of manufacturing magnetic dots
    13.
    发明授权
    Method of manufacturing magnetic dots 有权
    制造磁点的方法

    公开(公告)号：US08790526B2

    公开(公告)日：2014-07-29

    申请号：US13835397

    申请日：2013-03-15

    Applicant: Seagate Technology, LLC

    Inventor： Kaizhong Gao ,  Haiwen Xi ,  Song Xue

    IPC: G11B5/855

    CPC classification number: G11B5/855 ,  B82Y10/00 ,  G11B5/743 ,  G11B5/746 ,  G11B5/82 ,  H01F10/002 ,  H01L21/02112 ,  H01L29/82 ,  Y10T428/115

    Abstract: A method of producing bit-patterned media is provided whereby a shell structure is added on a bit-patterned media dot. The shell may be an antiferromagnetic material that will help stabilize the magnetization configuration at the remanent state due to exchange coupling between the dot and its shell. Therefore, this approach also improves the thermal stability of the media dot and helps each individual media dot maintain a single domain state.

    Abstract translation: 提供了一种生产钻头图案化介质的方法，其中壳结构被添加在钻头图案化介质点上。 壳体可以是反铁磁材料，其将由于点和其壳体之间的交换耦合而有助于在剩余状态下稳定磁化结构。 因此，这种方法还可以提高介质点的热稳定性，并帮助各个介质点维持单一的畴状态。

    Unipolar spin-transfer switching memory unit
    14.
    发明授权
    Unipolar spin-transfer switching memory unit 失效
    单极自旋转移开关存储单元

    公开(公告)号：US08750036B2

    公开(公告)日：2014-06-10

    申请号：US14017392

    申请日：2013-09-04

    Applicant: Seagate Technology LLC

    Inventor： Xiaohua Lou ,  Haiwen Xi

    IPC: G11C11/14

    CPC classification number: G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/1693 ,  Y10S977/933 ,  Y10S977/935

    Abstract: A memory unit includes a magnetic tunnel junction data cell electrically coupled to a bit line and a word line. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by passing a unipolar voltage across the magnetic tunnel junction data cell. A diode is electrically coupled between the magnetic tunnel junction data cell and the word line or bit line. A voltage source provides the unipolar voltage across the magnetic tunnel junction data cell that writes the high resistance state and the low resistance state.

    Abstract translation: 存储单元包括电耦合到位线和字线的磁性隧道结数据单元。 磁隧道结数据单元被配置为通过使单极电压跨过磁隧道结数据单元而在高电阻状态和低电阻状态之间切换。 二极管电耦合在磁性隧道结数据单元和字线或位线之间。 电压源提供写入高电阻状态和低电阻状态的磁性隧道结数据单元两端的单极电压。

    Magnetic memory with phonon glass electron crystal material
    15.
    发明授权
    Magnetic memory with phonon glass electron crystal material 失效
    具有声子玻璃电子晶体材料的磁记忆体

    公开(公告)号：US08687413B2

    公开(公告)日：2014-04-01

    申请号：US13779903

    申请日：2013-02-28

    Applicant: Seagate Technology LLC

    Inventor： Yuankai Zheng ,  Haiwen Xi ,  Dimitar V. Dimitrov ,  Dexin Wang

    IPC: G11C11/00

    CPC classification number: H01L43/02 ,  B82Y25/00 ,  G11C11/16 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3268 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

    Abstract: A magnetic memory unit includes a tunneling barrier separating a free magnetic element and a reference magnetic element. A first phonon glass electron crystal layer is disposed on a side opposing the tunneling barrier of either the free magnetic element or the reference magnetic element. A second phonon glass electron crystal layer also be disposed on a side opposing the tunneling barrier of either the free magnetic element or the reference magnetic element to provide a Peltier effect on the free magnetic element and the reference magnetic element.

    Abstract translation: 磁存储器单元包括分隔自由磁性元件和参考磁性元件的隧道势垒。 第一声​​子玻璃电子晶体层设置在与自由磁性元件或参考磁性元件的隧道势垒相对的一侧。 第二声子玻璃电子晶体层也设置在与自由磁性元件或参考磁性元件的隧道势垒相对的一侧上，以在自由磁性元件和参考磁性元件上提供珀尔帖效应。

    MAGNETIC MEMORY WITH PHONON GLASS ELECTRON CRYSTAL MATERIAL
    17.
    发明申请
    MAGNETIC MEMORY WITH PHONON GLASS ELECTRON CRYSTAL MATERIAL 失效
    带有玻璃电子晶体材料的磁性记忆体

    公开(公告)号：US20130175647A1

    公开(公告)日：2013-07-11

    申请号：US13779903

    申请日：2013-02-28

    Applicant: SEAGATE TECHNOLOGY LLC

    Inventor： Yuankai Zheng ,  Haiwen Xi ,  Dimitar V. Dimitrov ,  Dexin Wang

    IPC: H01L43/02

    CPC classification number: H01L43/02 ,  B82Y25/00 ,  G11C11/16 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3268 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

    Abstract: A magnetic memory unit includes a tunneling barrier separating a free magnetic element and a reference magnetic element. A first phonon glass electron crystal layer is disposed on a side opposing the tunneling barrier of either the free magnetic element or the reference magnetic element. A second phonon glass electron crystal layer also be disposed on a side opposing the tunneling barrier of either the free magnetic element or the reference magnetic element to provide a Peltier effect on the free magnetic element and the reference magnetic element.

    Abstract translation: 磁存储器单元包括分隔自由磁性元件和参考磁性元件的隧道势垒。 第一声​​子玻璃电子晶体层设置在与自由磁性元件或参考磁性元件的隧道势垒相对的一侧。 第二声子玻璃电子晶体层也设置在与自由磁性元件或参考磁性元件的隧道势垒相对的一侧上，以在自由磁性元件和参考磁性元件上提供珀尔帖效应。

    Random bit generator that applies alternating current (AC) to magnetic tunnel junction to generate a random bit
    18.
    发明授权
    Random bit generator that applies alternating current (AC) to magnetic tunnel junction to generate a random bit 有权
    随机位产生器，将交流电（AC）施加到磁隧道结以产生随机位

    公开(公告)号：US09087593B2

    公开(公告)日：2015-07-21

    申请号：US13947810

    申请日：2013-07-22

    Applicant: Seagate Technology LLC

    Inventor： Xiaobin Wang ,  Wenzhong Zhu ,  Henry Huang ,  Yiran Chen ,  Haiwen Xi

    IPC: G06F7/58 ,  G11C11/16 ,  G01R33/09

    CPC classification number: G11C11/1675 ,  G01R33/098 ,  G06F7/588 ,  G11C11/161 ,  G11C11/1697

    Abstract: Devices and methods for generating a random number that utilizes a magnetic tunnel junction are disclosed. An AC current source can be in electrical connection to a magnetic tunnel junction to provide an AC current to the magnetic tunnel junction. A read circuit can be used to determine a bit based on a state of the magnetic tunnel junction. A rate of production of the bits can be adjusted, such as by adjusting a frequency or amplitude of the AC current. A probability of obtaining a “0” or “1” bit can be managed, such as by an addition of DC biasing to the AC current.

    Abstract translation: 公开了用于产生利用磁性隧道结的随机数的装置和方法。 AC电流源可以与磁性隧道结电连接，以向磁性隧道结提供AC电流。 读取电路可以用于基于磁性隧道结的状态来确定位。 可以通过调整AC电流的频率或振幅来调整位的产生速率。 可以例如通过向AC电流添加DC偏置来管理获得“0”或“1”位的概率。

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