公开(公告)号：US20180019332A1

公开(公告)日：2018-01-18

申请号：US15208466

申请日：2016-07-12

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Woochul JEON ,  Chun-Li LIU ,  Ali SALIH

IPC: H01L29/778 ,  H01L29/40 ,  H01L29/16 ,  H01L23/495 ,  H01L29/06 ,  H01L27/088 ,  H01L29/417 ,  H01L29/20

CPC classification number: H01L29/778 ,  H01L23/4952 ,  H01L23/49537 ,  H01L23/585 ,  H01L27/0883 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/1066 ,  H01L29/16 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/41758 ,  H01L29/42316

Abstract: Implementations of semiconductor devices may include: a plurality of drain fingers and a plurality of source fingers interdigitated with one another; at least one gate; and at gate bus formed to completely surround the plurality of drain fingers and the plurality of source fingers; wherein the gate bus is mechanically and electrically coupled to the at least one gate.

公开(公告)号：US20170309617A1

公开(公告)日：2017-10-26

申请号：US15648264

申请日：2017-07-12

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Balaji PADMANABHAN ,  Prasad VENKATRAMAN ,  Zia HOSSAIN ,  Chun-Li LIU ,  Woochul JEON ,  Jason MCDONALD

IPC: H01L27/06 ,  H01L21/8258 ,  H01L23/367 ,  H01L27/02 ,  H01L29/417 ,  H01L21/74 ,  H01L29/10 ,  H01L29/778 ,  H01L29/872 ,  H01L23/48 ,  H01L29/20 ,  H01L29/861

CPC classification number: H01L27/0629 ,  H01L21/743 ,  H01L21/8258 ,  H01L23/3677 ,  H01L23/481 ,  H01L27/0255 ,  H01L27/0266 ,  H01L27/0688 ,  H01L29/1087 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/7783 ,  H01L29/861 ,  H01L29/872 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In one embodiment, a cascode rectifier structure includes a group III-V semiconductor structure includes a heterostructure disposed on a semiconductor substrate. A first current carrying electrode and a second current carrying electrode are disposed adjacent a major surface of the heterostructure and a control electrode is disposed between the first and second current carrying electrode. A rectifier device is integrated with the group III-V semiconductor structure and is electrically connected to the first current carrying electrode and to a third electrode. The control electrode is further electrically connected to the semiconductor substrate and the second current path is generally perpendicular to a primary current path between the first and second current carrying electrodes. The cascode rectifier structure is configured as a two terminal device.

公开(公告)号：US20190267252A1

公开(公告)日：2019-08-29

申请号：US16406899

申请日：2019-05-08

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Chun-Li LIU ,  Ali SALIH ,  Mingjiao LIU

IPC: H01L21/48 ,  H01L23/00 ,  H01L23/492 ,  H01L21/52 ,  H01L23/498 ,  H01L29/20

Abstract: In accordance with an embodiment, a semiconductor component includes a support having a side in which a device receiving structure and an interconnect structure are formed and a side from which a plurality of leads extends. A semiconductor device having a control terminal and first and second current carrying terminals and configured from a III-N semiconductor material is mounted to the device receiving structure. A first electrical interconnect is coupled between the first current carrying terminal of the semiconductor device and a first lead. A second electrical interconnect is coupled between the control terminal of the semiconductor device and a second lead.

公开(公告)号：US20190123041A1

公开(公告)日：2019-04-25

申请号：US16215870

申请日：2018-12-11

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Balaji PADMANABHAN ,  Prasad VENKATRAMAN ,  Zia HOSSAIN ,  Chun-Li LIU ,  Jason MCDONALD ,  Ali SALIH ,  Alexander YOUNG

IPC: H01L27/06 ,  H01L29/10 ,  H01L27/02 ,  H01L23/367 ,  H01L29/417 ,  H01L29/778 ,  H01L21/74 ,  H01L21/8258

CPC classification number: H01L27/0629 ,  H01L21/743 ,  H01L21/8258 ,  H01L23/3677 ,  H01L23/481 ,  H01L27/0255 ,  H01L27/0266 ,  H01L27/0688 ,  H01L29/1087 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/7783 ,  H01L29/861 ,  H01L29/872 ,  H01L2224/40245 ,  H01L2224/48247 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A cascode switch structure includes a group III-V transistor structure having a first current carrying electrode, a second current carrying electrode and a first control electrode. A semiconductor MOSFET device includes a third current carrying electrode electrically connected to the first current carrying electrode, a fourth current carrying electrode electrically connected to the first control electrode, and a second control electrode. A first diode includes a first cathode electrode electrically connected to the second current carrying electrode and a first anode electrode. A second diode includes a second anode electrode electrically connected to the first anode electrode and a second cathode electrode electrically connected to the fourth current carrying electrode. In one embodiment, the group III-V transistor structure, the first diode, and the second diode are integrated within a common substrate.

公开(公告)号：US20180350964A1

公开(公告)日：2018-12-06

申请号：US16054254

申请日：2018-08-03

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Woochul JEON ,  Chun-Li LIU

IPC: H01L29/778 ,  H01L23/535 ,  H01L29/20 ,  H01L29/417

CPC classification number: H01L29/7787 ,  H01L23/4824 ,  H01L23/535 ,  H01L29/2003 ,  H01L29/41758 ,  H01L29/7786

Abstract: Implementations of semiconductor devices may include: a first layer with a plurality of cells, each cell having a drain finger, a source finger and a gate ring; a second layer having a drain pad and a source pad, the drain pad having a width and a source pad having a width substantially the same as the drain pad; wherein a width of each drain finger of the first layer is wider than a width of each source finger of the first layer; and wherein each drain pad is coupled to each drain finger through a first contact and the source pad is coupled to each source finger through a second contact, where a width of the first contact is wider than a width of the second contact.

公开(公告)号：US20170317072A1

公开(公告)日：2017-11-02

申请号：US15648211

申请日：2017-07-12

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Balaji PADMANABHAN ,  Prasad VENKATRAMAN ,  Zia HOSSAIN ,  Chun-Li LIU ,  Jason MCDONALD ,  Ali SALIH ,  Alexander YOUNG

IPC: H01L27/06 ,  H01L21/8258 ,  H01L23/367 ,  H01L27/02 ,  H01L29/417 ,  H01L21/74 ,  H01L29/10 ,  H01L29/778 ,  H01L29/872 ,  H01L23/48 ,  H01L29/20 ,  H01L29/861

CPC classification number: H01L27/0629 ,  H01L21/743 ,  H01L21/8258 ,  H01L23/3677 ,  H01L23/481 ,  H01L27/0255 ,  H01L27/0266 ,  H01L27/0688 ,  H01L29/1087 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/7783 ,  H01L29/861 ,  H01L29/872 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A cascode switch structure includes a group III-V transistor structure having a first current carrying electrode, a second current carrying electrode and a first control electrode. A semiconductor MOSFET device includes a third current carrying electrode electrically connected to the second current carrying electrode, a fourth current carrying electrode electrically connected to the first control electrode, and a second control electrode. A first diode includes a first cathode electrode electrically connected to the first current carrying electrode and a first anode electrode. A second diode includes a second anode electrode electrically connected to the first anode electrode and a second cathode electrode electrically connected to the fourth current carrying electrode. In one embodiment, the group III-V transistor structure, the first diode, and the second diode are integrated within a common substrate.

公开(公告)号：US20160322969A1

公开(公告)日：2016-11-03

申请号：US15133644

申请日：2016-04-20

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Balaji PADMANABHAN ,  Prasad VENKATRAMAN ,  Peter MOENS ,  Mihir MUDHOLKAR ,  Joe FULTON ,  Philip CELAYA ,  Stephen ST. GERMAIN ,  Chun-Li LIU ,  Jason MCDONALD ,  Alexander YOUNG ,  Ali SALIH

IPC: H03K17/687 ,  H01L25/11 ,  H01L29/778

CPC classification number: H01L29/747 ,  H01L21/8258 ,  H01L23/4952 ,  H01L23/49524 ,  H01L23/49541 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/40 ,  H01L25/115 ,  H01L25/18 ,  H01L27/0629 ,  H01L27/088 ,  H01L27/0883 ,  H01L29/205 ,  H01L29/404 ,  H01L29/4238 ,  H01L29/7416 ,  H01L29/742 ,  H01L29/7786 ,  H01L29/7787 ,  H01L2224/0603 ,  H01L2224/40245 ,  H01L2224/48247 ,  H01L2224/49113 ,  H01L2224/73221 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2924/00014 ,  H03K17/6874 ,  H03K2017/6878 ,  H03K2217/0009 ,  H03K2217/0018 ,  H01L2224/37099

Abstract: A half-bridge circuit can include a high-side HEMT, a high-side switch transistor, a low-side HEMT, and a low-side switch transistor. The die substrates of the HEMTs can be coupled to the sources of their corresponding switch transistors. In another aspect, a packaged electronic device for a half-bridge circuit can have a design that can use shorter connectors that help to reduce parasitic inductance and resistance. In a further aspect, a packaged electronic device for a half-bridge circuit can include more than one connection along the bottom of the package allows less lead connections along the periphery of the packaged electronic device and can allow for a smaller package.

Abstract translation: 半桥电路可以包括高侧HEMT，高侧开关晶体管，低侧HEMT和低侧开关晶体管。 HEMT的管芯衬底可以耦合到其相应的开关晶体管的源极。 在另一方面，用于半桥电路的封装电子器件可以具有可以使用有助于减小寄生电感和电阻的较短连接器的设计。 在另一方面，用于半桥电路的封装电子设备可以包括沿着封装底部的多于一个的连接允许沿着封装的电子器件的周边的较少的引线连接并且可以允许较小的封装。

公开(公告)号：US20160118490A1

公开(公告)日：2016-04-28

申请号：US14853720

申请日：2015-09-14

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Balaji PADMANABHAN ,  Prasad VENKATRAMAN ,  Zia HOSSAIN ,  Chun-Li LIU ,  Jason MCDONALD ,  Ali SALIH ,  Alexander YOUNG

IPC: H01L29/778 ,  H01L27/02

CPC classification number: H01L27/0629 ,  H01L21/743 ,  H01L21/8258 ,  H01L23/3677 ,  H01L23/481 ,  H01L27/0255 ,  H01L27/0266 ,  H01L27/0688 ,  H01L29/1087 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/7783 ,  H01L29/861 ,  H01L29/872 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In one embodiment, a group III-V transistor structure includes a heterostructure disposed on a semiconductor substrate. A first current carrying electrode and a second current carrying electrode are disposed adjacent a major surface of the heterostructure and a control electrode is disposed between the first and second current carrying electrode. A clamping device is integrated with the group III-V transistor structure and is electrically connected to the first current carrying electrode a third electrode to provide a secondary current path during, for example, an electrical stress event.

Abstract translation: 在一个实施例中，III-V族晶体管结构包括设置在半导体衬底上的异质结构。 第一载流电极和第二载流电极邻近异质结构的主表面设置，并且控制电极设置在第一和第二载流电极之间。 钳位装置与III-V族晶体管结构集成，并且在第一电流承载电极处电连接第三电极，以在例如电应力事件期间提供次级电流路径。

公开(公告)号：US20160118379A1

公开(公告)日：2016-04-28

申请号：US14853729

申请日：2015-09-14

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Balaji PADMANABHAN ,  Prasad VENKATRAMAN ,  Zia HOSSAIN ,  Chun-Li LIU ,  Woochul JEON ,  Jason MCDONALD

IPC: H01L27/06 ,  H01L23/535 ,  H01L29/872 ,  H01L29/778 ,  H01L29/205

CPC classification number: H01L27/0629 ,  H01L21/743 ,  H01L21/8258 ,  H01L23/3677 ,  H01L23/481 ,  H01L27/0255 ,  H01L27/0266 ,  H01L27/0688 ,  H01L29/1087 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/7783 ,  H01L29/861 ,  H01L29/872 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In one embodiment, a cascode rectifier structure includes a group III-V semiconductor structure includes a heterostructure disposed on a semiconductor substrate. A first current carrying electrode and a second current carrying electrode are disposed adjacent a major surface of the heterostructure and a control electrode is disposed between the first and second current carrying electrode. A rectifier device is integrated with the group III-V semiconductor structure and is electrically connected to the first current carrying electrode and to a third electrode. The control electrode is further electrically connected to the semiconductor substrate and the second current path is generally perpendicular to a primary current path between the first and second current carrying electrodes.

Abstract translation: 在一个实施例中，共源共栅整流器结构包括III-V族半导体结构，其包括设置在半导体衬底上的异质结构。 第一载流电极和第二载流电极邻近异质结构的主表面设置，并且控制电极设置在第一和第二载流电极之间。 整流器件与III-V族半导体结构集成，并与第一载流电极和第三电极电连接。 控制电极进一步电连接到半导体衬底，第二电流通路大致垂直于第一和第二载流电极之间的初级电流通路。

公开(公告)号：US20160099314A1

公开(公告)日：2016-04-07

申请号：US14508266

申请日：2014-10-07

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Kirk HUANG ,  Chun-Li LIU ,  Ali SALIH

IPC: H01L29/06 ,  H01L29/66 ,  H01L21/28 ,  H01L29/78 ,  H01L29/423

CPC classification number: H01L29/0696 ,  H01L27/0629 ,  H01L27/0883 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/78

Abstract: In one embodiment, a method of forming an MOS transistor includes forming a threshold voltage (Vth) of the MOS transistor to have a first value at interior portions of the MOS transistor and a second value at other locations within the MOS transistor that are distal from the interior portion wherein the second value is less than the first value.

Abstract translation: 在一个实施例中，形成MOS晶体管的方法包括：形成MOS晶体管的阈值电压（Vth），以在MOS晶体管的内部具有第一值，并且在远离MOS晶体管的其他位置处形成第二值 所述内部部分，其中所述第二值小于所述第一值。