公开(公告)号：US20150319893A1

公开(公告)日：2015-11-05

申请号：US14696525

申请日：2015-04-27

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masakatsu OHNO ,  Satoru IDOJIRI ,  Koichi TAKESHIMA ,  Kayo KUMAKURA ,  Yoshiharu HIRAKATA ,  Kohei YOKOYAMA

IPC: H05K13/04 ,  B32B38/10 ,  B32B43/00

CPC classification number: B32B38/10 ,  B32B38/1858 ,  B32B43/006 ,  B32B2457/00 ,  H05K13/0486 ,  Y10T156/1105 ,  Y10T156/1132 ,  Y10T156/1906 ,  Y10T156/1944

Abstract: A separation apparatus (1) for separating a thin-film flexible stacked body (3) from a component (16) where the thin-film flexible stacked body (3) including an element layer is formed over a rigid substrate (2) such as a glass substrate, a quartz substrate, a ceramic substrate, or a metal substrate is provided. The separation apparatus (1) mainly includes a fixing device (10) for fixing the substrate (2) of the component (16), suction jigs (11) for lifting the flexible stacked body (3) by suction to be separated, circular suction pads (13) that are brought into direct contact with the flexible stacked body (3) and attached to the flexible stacked body (3) by suction, and clamp jigs (9) for holding an edge of the flexible stacked body (3). A position sensor such as a laser measuring instrument for measuring or monitoring a separation state of the flexible stacked body may be used together.

Abstract translation: 一种用于将薄膜柔性层叠体（3）从包括元件层的薄膜柔性层叠体（3）的部件（16）分离的分离装置（1）形成在刚性基板（2）上，例如 玻璃基板，石英基板，陶瓷基板或金属基板。 分离装置（1）主要包括用于固定部件（16）的基板（2）的固定装置（10），用于通过抽吸提升柔性堆叠体（3）以分离的吸入夹具（11），圆形抽吸 与柔性层叠体（3）直接接触并通过抽吸附接到柔性层叠体（3）的垫（13）和用于保持柔性层叠体（3）的边缘的夹具（9）。 可以一起使用诸如用于测量或监测柔性层叠体的分离状态的激光测量仪器的位置传感器。

公开(公告)号：US20150314456A1

公开(公告)日：2015-11-05

申请号：US14699614

申请日：2015-04-29

Applicant: Semiconductor Energy Laboratory Co., LTD.

Inventor： Kayo KUMAKURA ,  Satoru IDOJIRI ,  Masakatsu OHNO ,  Koichi TAKESHIMA ,  Yoshiharu HIRAKATA ,  Kohei YOKOYAMA

IPC: B25J15/06 ,  B25J11/00

CPC classification number: B25J15/0616 ,  B25J11/00 ,  B25J15/0004 ,  B25J15/0028 ,  B25J15/0061

Abstract: A film suction mechanism is provided which can prevent a film-like member from warping or sagging for reliable suction, handing over, or the like of the film-like member. A film suction mechanism of the present invention is a film suction mechanism for processing or transferring a flexible film-like member. The film suction mechanism includes a suction unit having a function of attaching the film-like member thereto by suction and an air nozzle having a function of blowing pressurized air onto a first surface of the film-like member. The suction unit includes a plurality of suction pads. The suction unit is capable of attaching a second surface of the film-like member thereto by suction while the pressurized air is blown onto the first surface of the film-like member.

Abstract translation: 提供了一种胶片吸引机构，其可以防止膜状构件翘曲或下垂以获得膜状构件的可靠抽吸，移交等。 本发明的吸膜机构是用于加工或转移柔性膜状部件的膜吸引机构。 薄膜抽吸机构包括具有通过抽吸将薄膜状构件附接到其上的功能的抽吸单元和具有将加压空气吹送到薄膜状构件的第一表面上的功能的空气喷嘴。 抽吸单元包括多个吸盘。 抽吸单元能够通过抽吸将薄膜状构件的第二表面附着在压力空气吹到薄膜状构件的第一表面上。

公开(公告)号：US20220013754A1

公开(公告)日：2022-01-13

申请号：US17479329

申请日：2021-09-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Seiji Yasumoto ,  Kayo KUMAKURA ,  Yuka SATO ,  Satoru IDOJIRI ,  Hiroki ADACHI ,  Kenichi OKAZAKI

IPC: H01L51/56 ,  H01L51/00 ,  H01L51/52

Abstract: A high-yield fabricating method of a semiconductor device including a peeling step is provided.
A peeling method includes a step of stacking and forming a first material layer and a second material layer over a substrate and a step of separating the first material layer and the second material layer from each other. The second material layer is formed over the substrate with the first material layer therebetween. The first material layer includes a first compound layer in contact with the second material layer and a second compound layer positioned closer to the substrate side than the first compound layer is. The first compound layer has the highest oxygen content among the layers included in the first material layer. The second compound layer has the highest nitrogen content among the layers included in the first material layer. The second material layer includes a resin. In the step of separating, the first material layer and the second material layer are separated from each other by irradiation of an interface between the first material layer and the second material layer or the vicinity of the interface with light.

公开(公告)号：US20190035820A1

公开(公告)日：2019-01-31

申请号：US16143970

申请日：2018-09-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junpei YANAKA ,  Kayo KUMAKURA ,  Masataka SATO ,  Satoru IDOJIRI ,  Kensuke YOSHIZUMI ,  Mari TATEISHI ,  Natsuko TAKASE

IPC: H01L27/12 ,  H01L23/29 ,  H01L27/32 ,  H01L51/00

CPC classification number: H01L27/1225 ,  H01L23/293 ,  H01L27/124 ,  H01L27/1266 ,  H01L27/3262 ,  H01L51/003 ,  H01L2227/323

Abstract: To provide a peeling method that achieves low cost and high mass productivity. The peeling method includes the steps of: forming a first layer with a photosensitive material over a formation substrate; forming a first region and a second region having a smaller thickness than the first region in the first layer by photolithography to form a resin layer having the first region and the second region; forming a transistor including an oxide semiconductor in a channel formation region over the first region in the resin layer; forming a conductive layer over the second region in the resin layer; and irradiating the resin layer with laser light to separate the transistor and the formation substrate.

公开(公告)号：US20180061639A1

公开(公告)日：2018-03-01

申请号：US15687915

申请日：2017-08-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masataka SATO ,  Seiji YASUMOTO ,  Kayo KUMAKURA ,  Satoru IDOJIRI

IPC: H01L21/02 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L21/02694 ,  G02F2201/44 ,  H01L21/02488 ,  H01L21/67132 ,  H01L21/7806 ,  H01L27/1225 ,  H01L27/1266 ,  H01L29/66969

Abstract: The yield of a manufacturing process of a semiconductor device is increased. The mass productivity of a semiconductor device is increased. A semiconductor device is manufactured by forming a first material layer over a substrate; forming a second material layer over the first material layer; and separating the first material layer and the second material layer from each other; and heating the first material layer and the second material layer that are stacked before the separation. The first material layer includes a gas containing hydrogen, oxygen, or hydrogen and oxygen (e.g., water) in a metal oxide, for example. The second material layer includes a resin. The first material layer and the second material layer are separated from each other by a break of a hydrogen bond. Specifically water is separated out at the interface or near the interface, and then adhesion is reduced due to the water present.

公开(公告)号：US20180033978A1

公开(公告)日：2018-02-01

申请号：US15657259

申请日：2017-07-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masakatsu OHNO ,  Kayo KUMAKURA ,  Hiroyuki WATANABE ,  Seiji YASUMOTO ,  Satoru IDOJIRI ,  Hiroki ADACHI

IPC: H01L51/00 ,  H01L27/32 ,  H01L51/52

CPC classification number: H01L51/0097 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/1266 ,  H01L27/3262 ,  H01L29/7869 ,  H01L51/003 ,  H01L51/5246 ,  H01L51/5253 ,  H01L2227/323 ,  H01L2227/326 ,  H01L2251/5338 ,  Y02E10/549

Abstract: The yield of a separation process is improved. The mass productivity of a display device which is formed through a separation process is improved. A layer is formed over a substrate with use of a material including a resin or a resin precursor. Next, a resin layer is formed by performing heat treatment on the layer. Next, a layer to be separated is formed over the resin layer. Then, the layer to be separated and the substrate are separated from each other. The heat treatment is performed in an atmosphere containing oxygen or while supplying a gas containing oxygen.

公开(公告)号：US20170338250A1

公开(公告)日：2017-11-23

申请号：US15596412

申请日：2017-05-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junpei YANAKA ,  Kayo KUMAKURA ,  Masataka SATO ,  Satoru IDOJIRI ,  Kensuke YOSHIZUMI ,  Mari TATEISHI ,  Natsuko TAKASE

IPC: H01L27/12 ,  H01L23/29 ,  H01L27/32

CPC classification number: H01L27/1225 ,  H01L23/293 ,  H01L27/124 ,  H01L27/1266 ,  H01L27/3262 ,  H01L51/003 ,  H01L2227/323

Abstract: To provide a peeling method that achieves low cost and high mass productivity. The peeling method includes the steps of: forming a first layer with a photosensitive material over a formation substrate; forming a first region and a second region having a smaller thickness than the first region in the first layer by photolithography to form a resin layer having the first region and the second region; forming a transistor including an oxide semiconductor in a channel formation region over the first region in the resin layer; forming a conductive layer over the second region in the resin layer; and irradiating the resin layer with laser light to separate the transistor and the formation substrate.

公开(公告)号：US20170092885A1

公开(公告)日：2017-03-30

申请号：US15252295

申请日：2016-08-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tatsuya SAKUISHI ,  Yutaka UCHIDA ,  Hiroki ADACHI ,  Saki EGUCHI ,  Junpei YANAKA ,  Kayo KUMAKURA ,  Seiji YASUMOTO ,  Kohei YOKOYAMA ,  Akihiro CHIDA

IPC: H01L51/00 ,  B32B37/10 ,  B32B37/02 ,  B32B37/18

CPC classification number: H01L51/0097 ,  B32B7/02 ,  B32B7/06 ,  B32B7/12 ,  B32B15/08 ,  B32B15/18 ,  B32B15/20 ,  B32B17/00 ,  B32B17/06 ,  B32B27/20 ,  B32B27/286 ,  B32B27/30 ,  B32B27/325 ,  B32B27/34 ,  B32B27/36 ,  B32B27/365 ,  B32B37/02 ,  B32B37/10 ,  B32B37/1292 ,  B32B37/18 ,  B32B38/10 ,  B32B2250/05 ,  B32B2255/20 ,  B32B2260/021 ,  B32B2260/046 ,  B32B2264/102 ,  B32B2307/202 ,  B32B2307/40 ,  B32B2307/50 ,  B32B2307/536 ,  B32B2307/558 ,  B32B2310/0843 ,  B32B2315/08 ,  B32B2457/20 ,  H01L51/003 ,  H01L51/5253 ,  H01L2251/5338 ,  Y02E10/549 ,  Y02P70/521

Abstract: A flexible device is provided. The hardness of a bonding layer of the flexible device is set to be higher than Shore D of 70, or preferably higher than or equal to Shore D of 80. The coefficient of expansion of a flexible substrate of the flexible device is set to be less than 58 ppm/° C., or preferably less than or equal to 30 ppm/° C.

公开(公告)号：US20160111550A1

公开(公告)日：2016-04-21

申请号：US14976411

申请日：2015-12-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroki ADACHI ,  Kayo KUMAKURA

IPC: H01L29/786

CPC classification number: H01L29/78603 ,  H01L21/84 ,  H01L27/1218 ,  H01L27/1222 ,  H01L27/1262 ,  H01L29/78606 ,  H01L2021/775

Abstract: Provided is a flexible device with fewer defects caused by a crack or a flexible device having high productivity. A semiconductor device including: a display portion over a flexible substrate, including a transistor and a display element; a semiconductor layer surrounding the display portion; and an insulating layer over the transistor and the semiconductor layer. When seen in a direction perpendicular to a surface of the flexible substrate, an end portion of the substrate is substantially aligned with an end portion of the semiconductor layer, and an end portion of the insulating layer is positioned over the semiconductor layer.

Abstract translation: 提供了一种具有由裂纹引起的缺陷或具有高生产率的柔性装置的柔性装置。 一种半导体器件，包括：柔性基板上的显示部分，包括晶体管和显示元件; 围绕显示部的半导体层; 以及在晶体管和半导体层上的绝缘层。 当在与柔性基板的表面垂直的方向上观察时，基板的端部与半导体层的端部大致对准，绝缘层的端部位于半导体层的上方。

公开(公告)号：US20150236280A1

公开(公告)日：2015-08-20

申请号：US14621914

申请日：2015-02-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tatsuya SAKUISHI ,  Yutaka UCHIDA ,  Hiroki ADACHI ,  Saki EGUCHI ,  Junpei YANAKA ,  Kayo KUMAKURA ,  Seiji YASUMOTO ,  Kohei YOKOYAMA ,  Akihiro CHIDA

IPC: H01L51/00 ,  H01L27/32 ,  B32B38/10 ,  B32B7/02 ,  B32B37/02 ,  B32B37/18 ,  H01L51/56 ,  H01L51/52

CPC classification number: H01L51/0097 ,  B32B7/02 ,  B32B7/06 ,  B32B7/12 ,  B32B15/08 ,  B32B15/18 ,  B32B15/20 ,  B32B17/00 ,  B32B17/06 ,  B32B27/20 ,  B32B27/286 ,  B32B27/30 ,  B32B27/325 ,  B32B27/34 ,  B32B27/36 ,  B32B27/365 ,  B32B37/02 ,  B32B37/10 ,  B32B37/1292 ,  B32B37/18 ,  B32B38/10 ,  B32B2250/05 ,  B32B2255/20 ,  B32B2260/021 ,  B32B2260/046 ,  B32B2264/102 ,  B32B2307/202 ,  B32B2307/40 ,  B32B2307/50 ,  B32B2307/536 ,  B32B2307/558 ,  B32B2310/0843 ,  B32B2315/08 ,  B32B2457/20 ,  H01L51/003 ,  H01L51/5253 ,  H01L2251/5338 ,  Y02E10/549 ,  Y02P70/521

Abstract: A flexible device is provided. The hardness of a bonding layer of the flexible device is set to be higher than Shore D of 70, or preferably higher than or equal to Shore D of 80. The coefficient of expansion of a flexible substrate of the flexible device is set to be less than 58 ppm/° C., or preferably less than or equal to 30 ppm/° C.

Abstract translation: 提供了灵活的设备。 柔性装置的粘合层的硬度设定为高于70°的肖氏D值，或优选高于或等于邵氏D的80°。挠性装置的柔性基板的膨胀系数设定得较小 比58ppm /℃，或优选小于或等于30ppm /℃