公开(公告)号：US20240365597A1

公开(公告)日：2024-10-31

申请号：US18573966

申请日：2022-06-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hidekazu MIYAIRI ,  Yoshinobu ASAMI ,  Takahiro FUJIE ,  Ryo TAGASHIRA

IPC: H10K59/122 ,  H10K59/12

CPC classification number: H10K59/122 ,  H10K59/1201

Abstract: A display apparatus with high display quality is provided. The display apparatus includes a first pixel, a second pixel placed to be adjacent to the first pixel, a first insulating layer, and a second insulating layer over the first insulating layer. The first pixel includes a first pixel electrode, a first EL layer covering the first pixel electrode, a third insulating layer over the first EL layer, and a common electrode over the first EL layer and the third insulating layer. The second pixel includes a second pixel electrode, a second EL layer covering the second pixel electrode, a fourth insulating layer over the second EL layer, and the common electrode over the second EL layer and the fourth insulating layer. Part of the second insulating layer overlaps with the first pixel electrode. Another part of the second insulating layer overlaps with the second pixel electrode. In a cross-sectional view of the display apparatus, a side surface of the second insulating layer has a tapered shape and a top surface thereof has a convex shape.

公开(公告)号：US20240219732A1

公开(公告)日：2024-07-04

申请号：US18558060

申请日：2022-04-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hidekazu MIYAIRI ,  Sho KATO

IPC: G02B27/01 ,  H01L25/16 ,  H01L25/18 ,  H10K59/90 ,  H10K59/95

CPC classification number: G02B27/0172 ,  G02B2027/0112 ,  G02B2027/0178 ,  H01L25/167 ,  H01L25/18 ,  H10K59/90 ,  H10K59/95

Abstract: An electronic device with high luminance is provided. The electronic device includes a first display apparatus, a second display apparatus, and an optical element. The first display apparatus includes a first light-emitting element and the second display apparatus includes a second light-emitting element. A color of first light emitted from the first light-emitting element is different from a color of second light emitted from the second light-emitting element. An optical element is provided between the first display apparatus and the second display apparatus. The optical element includes a first light guide plate and a second light guide plate.

公开(公告)号：US20220115412A1

公开(公告)日：2022-04-14

申请号：US17560479

申请日：2021-12-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hidekazu MIYAIRI ,  Akiharu MIYANAGA ,  Kengo AKIMOTO ,  Kojiro SHIRAISHI

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/24 ,  H01L29/66

Abstract: An embodiment is to include an inverted staggered (bottom gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer and a buffer layer is provided between the semiconductor layer and a source and drain electrode layers. The buffer layer having higher carrier concentration than the semiconductor layer is provided intentionally between the source and drain electrode layers and the semiconductor layer, whereby an ohmic contact is formed.

公开(公告)号：US20180102420A1

公开(公告)日：2018-04-12

申请号：US15722055

申请日：2017-10-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshinori ANDO ,  Hidekazu MIYAIRI ,  Naoto YAMADE ,  Asako HIGA ,  Miki SUZUKI ,  Yoshinori IEDA ,  Yasutaka SUZUKI ,  Kosei NEI ,  Shunpei YAMAZAKI

IPC: H01L29/66 ,  H01L29/786 ,  H01L27/12 ,  H01L27/088 ,  H01L27/06 ,  H01L21/822 ,  H01L21/4757 ,  H01L21/477 ,  H01L21/469 ,  H01L21/02 ,  C23C14/35 ,  C23C14/08

CPC classification number: H01L29/66969 ,  C23C14/086 ,  C23C14/351 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02318 ,  H01L21/469 ,  H01L21/4757 ,  H01L21/477 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/1225 ,  H01L27/1255 ,  H01L27/1259 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78693

Abstract: To improve the electrical characteristics of a semiconductor device including an oxide semiconductor, and to provide a highly reliable semiconductor device with a small variation in electrical characteristics. The semiconductor device includes a first insulating film, a first barrier film over the first insulating film, a second insulating film over the first barrier film, and a first transistor including a first oxide semiconductor film over the second insulating film. The amount of hydrogen molecules released from the first insulating film at a given temperature higher than or equal to 400° C., which is measured by thermal desorption spectroscopy, is less than or equal to 130% of the amount of released hydrogen molecules at 300° C. The second insulating film includes a region containing oxygen at a higher proportion than oxygen in the stoichiometric composition.

公开(公告)号：US20170062214A1

公开(公告)日：2017-03-02

申请号：US15350777

申请日：2016-11-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Koichiro TANAKA ,  Hidekazu MIYAIRI ,  Aiko SHIGA ,  Akihisa SHIMOMURA ,  Atsuo ISOBE

IPC: H01L21/02 ,  H01L21/283 ,  B23K26/00 ,  B23K26/06 ,  B23K26/073 ,  H01L21/268 ,  H01L27/12

CPC classification number: H01L21/02675 ,  B23K26/0604 ,  B23K26/0608 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  B23K26/352 ,  B23K2101/40 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/268 ,  H01L21/283 ,  H01L27/1285 ,  H01L27/1296 ,  H01L27/14625

Abstract: The present invention is characterized in that by laser beam being slantly incident to the convex lens, an aberration such as astigmatism or the like is occurred, and the shape of the laser beam is made linear on the irradiation surface or in its neighborhood. Since the present invention has a very simple configuration, the optical adjustment is easier, and the device becomes compact in size. Furthermore, since the beam is slantly incident with respect to the irradiated body, the return beam can be prevented.

Abstract translation: 本发明的特征在于，通过激光束倾斜地入射到凸透镜，发生像散等像，并且激光束的形状在照射表面或其附近被形成为线性。 由于本发明具有非常简单的结构，因此光学调节更容易，并且器件尺寸变得紧凑。 此外，由于光束相对于照射体倾斜入射，所以可以防止返回光束。

公开(公告)号：US20160233343A1

公开(公告)日：2016-08-11

申请号：US15017818

申请日：2016-02-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hidekazu MIYAIRI

IPC: H01L29/786 ,  H01L29/06 ,  H01L29/423

CPC classification number: H01L29/0688 ,  H01L27/11273 ,  H01L27/11553 ,  H01L27/11556 ,  H01L27/1158 ,  H01L27/11582 ,  H01L29/41733 ,  H01L29/4236 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/78642 ,  H01L29/7869 ,  H01L29/78696

Abstract: A miniaturized transistor having highly stable electrical characteristics is provided. Furthermore, high performance and high reliability of a semiconductor device including the transistor is achieved. The transistor includes a first electrode, a second electrode, a third electrode, an oxide semiconductor layer, a first insulating layer, and a second insulating layer. The transistor includes a first region and a second region surrounded by the first region. In the first region, the first insulating layer, the second electrode, the oxide semiconductor layer, and the second insulating layer are stacked. In the second region, the first electrode, the oxide semiconductor layer, the second insulating layer, and the third electrode are stacked.

Abstract translation: 提供具有高度稳定的电气特性的小型化晶体管。 此外，实现了包括晶体管的半导体器件的高性能和高可靠性。 晶体管包括第一电极，第二电极，第三电极，氧化物半导体层，第一绝缘层和第二绝缘层。 晶体管包括由第一区域包围的第一区域和第二区域。 在第一区域中，堆叠第一绝缘层，第二电极，氧化物半导体层和第二绝缘层。 在第二区域中，堆叠第一电极，氧化物半导体层，第二绝缘层和第三电极。

公开(公告)号：US20160079438A1

公开(公告)日：2016-03-17

申请号：US14945937

申请日：2015-11-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hidekazu MIYAIRI ,  Kengo AKIMOTO ,  Yasuo NAKAMURA

IPC: H01L29/786 ,  H01L29/51 ,  H01L27/12 ,  H01L29/06 ,  H01L29/10 ,  H01L29/423 ,  H01L29/24 ,  H01L29/49

CPC classification number: H01L29/78696 ,  H01L21/02323 ,  H01L21/02565 ,  H01L21/32139 ,  H01L21/465 ,  H01L21/467 ,  H01L21/4763 ,  H01L21/47635 ,  H01L27/1225 ,  H01L29/0692 ,  H01L29/1033 ,  H01L29/24 ,  H01L29/263 ,  H01L29/42364 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/495 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78633 ,  H01L29/7869 ,  H01L29/78693

Abstract: To provide a method by which a semiconductor device including a thin film transistor with excellent electric characteristics and high reliability is manufactured with a small number of steps. After a channel protective layer is formed over an oxide semiconductor film containing In, Ga, and Zn, a film having n-type conductivity and a conductive film are formed, and a resist mask is formed over the conductive film. The conductive film, the film having n-type conductivity, and the oxide semiconductor film containing In, Ga, and Zn are etched using the channel protective layer and gate insulating films as etching stoppers with the resist mask, so that source and drain electrode layers, a buffer layer, and a semiconductor layer are formed.

公开(公告)号：US20150255490A1

公开(公告)日：2015-09-10

申请号：US14638504

申请日：2015-03-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hidekazu MIYAIRI

IPC: H01L27/12 ,  H01L29/786 ,  H01L23/538 ,  H01L29/04 ,  H01L29/24

CPC classification number: H01L27/1255 ,  H01L23/481 ,  H01L27/0688 ,  H01L27/1207 ,  H01L27/1225 ,  H01L29/78651 ,  H01L29/7869 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided is a semiconductor device suitable for miniaturization and higher density. The semiconductor device includes a first transistor, a second transistor overlapping with the first transistor, a capacitor overlapping with the second transistor, and a first wiring electrically connected to the capacitor. The first wiring includes a region overlapping with an electrode of the second transistor. The first transistor, the second transistor, and the capacitor are electrically connected to one another. A channel of the first transistor includes a single crystal semiconductor. A channel of the second transistor includes an oxide semiconductor.

Abstract translation: 提供了适合于小型化和更高密度的半导体器件。 半导体器件包括第一晶体管，与第一晶体管重叠的第二晶体管，与第二晶体管重叠的电容器，以及电连接到电容器的第一布线。 第一布线包括与第二晶体管的电极重叠的区域。 第一晶体管，第二晶体管和电容器彼此电连接。 第一晶体管的沟道包括单晶半导体。 第二晶体管的沟道包括氧化物半导体。

公开(公告)号：US20150069390A1

公开(公告)日：2015-03-12

申请号：US14541165

申请日：2014-11-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Takahiro TSUJI ,  Teruaki OCHIAI ,  Koji KUSUNOKI ,  Hidekazu MIYAIRI

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L29/45

Abstract: An object is to provide a highly reliable transistor and a semiconductor device including the transistor. A semiconductor device including a gate electrode; a gate insulating film over the gate electrode; an oxide semiconductor film over the gate insulating film; and a source electrode and a drain electrode over the oxide semiconductor film, in which activation energy of the oxide semiconductor film obtained from temperature dependence of a current (on-state current) flowing between the source electrode and the drain electrode when a voltage greater than or equal to a threshold voltage is applied to the gate electrode is greater than or equal to 0 meV and less than or equal to 25 meV, is provided.

Abstract translation: 目的是提供一种高度可靠的晶体管和包括晶体管的半导体器件。 一种包括栅电极的半导体器件; 栅电极上的栅极绝缘膜; 栅极绝缘膜上的氧化物半导体膜; 以及氧化物半导体膜上的源电极和漏电极，其中当氧化物半导体膜的电压大于电压时，源电极和漏电极之间流过的电流（导通电流）的温度依赖性获得氧化物半导体膜的活化能 或等于施加到栅电极的阈值电压大于或等于0meV且小于或等于25meV。

公开(公告)号：US20140113440A1

公开(公告)日：2014-04-24

申请号：US14145235

申请日：2013-12-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Koichiro TANAKA ,  Hidekazu MIYAIRI ,  Aiko SHIGA ,  Akihisa SHIMOMURA ,  Atsuo ISOBE

IPC: H01L21/02 ,  H01L21/283 ,  H01L21/268

CPC classification number: H01L21/02675 ,  B23K26/0604 ,  B23K26/0608 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  B23K26/352 ,  B23K2101/40 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/268 ,  H01L21/283 ,  H01L27/1285 ,  H01L27/1296 ,  H01L27/14625

Abstract: The present invention is characterized in that by laser beam being slantly incident to the convex lens, an aberration such as astigmatism or the like is occurred, and the shape of the laser beam is made linear on the irradiation surface or in its neighborhood. Since the present invention has a very simple configuration, the optical adjustment is easier, and the device becomes compact in size. Furthermore, since the beam is slantly incident with respect to the irradiated body, the return beam can be prevented.

Abstract translation: 本发明的特征在于，通过激光束倾斜地入射到凸透镜，发生像散等像，并且激光束的形状在照射表面或其附近被制成线性的。 由于本发明具有非常简单的结构，因此光学调节更容易，并且器件尺寸变得紧凑。 此外，由于光束相对于照射体倾斜入射，所以可以防止返回光束。