Thin film capacitor, thin film capacitor-embedded printed circuit board and manufacturing method of thin film capacitor
    11.
    发明申请
    Thin film capacitor, thin film capacitor-embedded printed circuit board and manufacturing method of thin film capacitor 有权
    薄膜电容器,薄膜电容器嵌入式印刷电路板以及薄膜电容器的制造方法

    公开(公告)号:US20080236878A1

    公开(公告)日:2008-10-02

    申请号:US12076989

    申请日:2008-03-26

    IPC分类号: H05K1/18 H01G4/10 H01G7/00

    摘要: There is provided a thin film capacitor and a capacitor-embedded printed board improved in leakage current characteristics. A dielectric layer is formed of a BiZnNb-based amorphous metal oxide with a predetermined dielectric constant without being heat treated at a high temperature, and metallic phase bismuth of the BiZnNb-based amorphous metal oxide is adjusted in content to attain a desired dielectric constant. Also, another dielectric layer having a different content of metallic phase bismuth may be formed. The thin film capacitor including: a first electrode; a dielectric layer including a first dielectric film formed on the first electrode, the dielectric layer comprising a BiZnNb-based amorphous metal oxide; and a second electrode formed on the dielectric layer, wherein the BiZnNb-based amorphous metal oxide contains metallic phase bismuth.

    摘要翻译: 提供了薄膜电容器和电容器嵌入式印刷电路板,改善了漏电流特性。 电介质层由具有预定介电常数的BiZnNb基非晶态金属氧化物形成,而不在高温下进行热处理,并且将BiZnNb基非晶态金属氧化物的金属相铋的含量调节到所需的介电常数。 此外,可以形成具有不同金属相铋含量的另一介质层。 所述薄膜电容器包括:第一电极; 介电层,包括形成在所述第一电极上的第一电介质膜,所述电介质层包含BiZnNb基非晶态金属氧化物; 以及形成在所述电介质层上的第二电极,其中所述BiZnNb基非晶态金属氧化物含有金属相铋。

    Thin film capacitor, thin film capacitor-embedded printed circuit board and manufacturing method of thin film capacitor
    12.
    发明授权
    Thin film capacitor, thin film capacitor-embedded printed circuit board and manufacturing method of thin film capacitor 有权
    薄膜电容器,薄膜电容器嵌入式印刷电路板以及薄膜电容器的制造方法

    公开(公告)号:US07943858B2

    公开(公告)日:2011-05-17

    申请号:US12076989

    申请日:2008-03-26

    IPC分类号: H05K1/16

    摘要: There is provided a thin film capacitor and a capacitor-embedded printed board improved in leakage current characteristics. A dielectric layer is formed of a BiZnNb-based amorphous metal oxide with a predetermined dielectric constant without being heat treated at a high temperature, and metallic phase bismuth of the BiZnNb-based amorphous metal oxide is adjusted in content to attain a desired dielectric constant. Also, another dielectric layer having a different content of metallic phase bismuth may be formed. The thin film capacitor including: a first electrode; a dielectric layer including a first dielectric film formed on the first electrode, the dielectric layer comprising a BiZnNb-based amorphous metal oxide; and a second electrode formed on the dielectric layer, wherein the BiZnNb-based amorphous metal oxide contains metallic phase bismuth.

    摘要翻译: 提供了薄膜电容器和电容器嵌入式印刷电路板,改善了漏电流特性。 电介质层由具有预定介电常数的BiZnNb基非晶态金属氧化物形成,而不在高温下进行热处理,并且将BiZnNb基非晶态金属氧化物的金属相铋的含量调节到所需的介电常数。 此外,可以形成具有不同金属相铋含量的另一介质层。 所述薄膜电容器包括:第一电极; 介电层,包括形成在所述第一电极上的第一电介质膜,所述电介质层包含BiZnNb基非晶态金属氧化物; 以及形成在所述电介质层上的第二电极,其中所述BiZnNb基非晶态金属氧化物含有金属相铋。

    Capacitor and multi-layer board embedding the capacitor
    14.
    发明申请
    Capacitor and multi-layer board embedding the capacitor 审中-公开
    电容器和多层板嵌入电容器

    公开(公告)号:US20080158777A1

    公开(公告)日:2008-07-03

    申请号:US11979770

    申请日:2007-11-08

    IPC分类号: H01G4/06 H01G4/00

    摘要: There are provided a capacitor and a thin film capacitor-embedded multi-layer wiring board. The capacitor includes: first and second electrodes connected to first and second polarities; a dielectric layer formed therebetween; and at least one floating electrode disposed inside the dielectric layer and having overlaps with the first and second electrodes. The wiring board includes: an insulating body having a plurality of insulating layers thereon; a plurality of conductive patterns and conductive vias formed on the insulating layers, respectively, to constitute an interlayer circuit; and a thin film capacitor embedded in the insulating body, wherein the thin film capacitor includes a first electrode layer, a first dielectric layer, at least one floating electrode layer, a second dielectric layer and a second electrode layer sequentially formed, and wherein the first and second electrode layers are connected to the interlayer circuit and the floating electrode layer is not directly connected thereto.

    摘要翻译: 提供电容器和薄膜电容器嵌入式多层布线板。 电容器包括:连接到第一和第二极性的第一和第二电极; 在它们之间形成介电层; 以及至少一个浮置电极,其布置在电介质层的内部并与第一和第二电极重叠。 布线板包括:绝缘体,其上具有多个绝缘层; 分别形成在绝缘层上的多个导电图案和导电通孔,以构成层间电路; 以及嵌入在所述绝缘体中的薄膜电容器,其中所述薄膜电容器包括依次形成的第一电极层,第一电介质层,至少一个浮置电极层,第二电介质层和第二电极层,并且其中所述第一电极层 并且第二电极层连接到层间电路,并且浮动电极层不直接连接到其上。