FABRICATION METHOD OF COMPOSITE METAL OXIDE DIELECTRIC FILM, AND COMPOSITE METAL OXIDE DIELECTRIC FILM FABRICATED THEREBY
    9.
    发明申请
    FABRICATION METHOD OF COMPOSITE METAL OXIDE DIELECTRIC FILM, AND COMPOSITE METAL OXIDE DIELECTRIC FILM FABRICATED THEREBY 审中-公开
    复合金属氧化物电介质薄膜的制造方法及其复合氧化物介质薄膜的制备方法

    公开(公告)号:US20090208640A1

    公开(公告)日:2009-08-20

    申请号:US12432221

    申请日:2009-04-29

    IPC分类号: B05D5/12 C23C14/34

    摘要: The invention relates to a fabrication method of a composite metal oxide dielectric film containing at least two metallic elements on a substrate, and a composite metal oxide dielectric film fabricated thereby. The method includes: forming an amorphous film containing at least one of the metallic elements; preparing a hydrothermal solution where a precursor of the remaining element of the metallic elements is mixed; immersing the amorphous film into the hydrothermal solution; and hydrothermally treating the amorphous film so that the remaining one of the metallic elements is synthesized to the amorphous film, thereby forming a crystallized composite metal oxide film.

    摘要翻译: 本发明涉及在基板上含有至少两种金属元素的复合金属氧化物电介质膜的制造方法以及由此制造的复合金属氧化物电介质膜。 该方法包括:形成含有至少一种金属元素的非晶膜; 制备其中混合金属元素的剩余元素的前体的水热溶液; 将非晶膜浸入水热溶液中; 对该非晶质膜进行水热处理,使残留的金属元素与非晶质膜合成,从而形成结晶化复合金属氧化物膜。