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    Photoelectric conversion device
    12.
    发明授权
    Photoelectric conversion device 有权
    光电转换装置

    公开(公告)号：US09437768B2

    公开(公告)日：2016-09-06

    申请号：US13615700

    申请日：2012-09-14

    申请人： Yoichiro Numasawa ,  Yasushi Maeda ,  Yoshikazu Hiura ,  Shunpei Yamazaki

    发明人： Yoichiro Numasawa ,  Yasushi Maeda ,  Yoshikazu Hiura ,  Shunpei Yamazaki

    IPC分类号： H01L31/044 ,  H01L31/072 ,  H01L31/0747 ,  H01L31/18 ,  H01L31/0312

    CPC分类号： H01L31/072 ,  H01L31/0312 ,  H01L31/0747 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： A photoelectric conversion device with low resistance loss and high conversion efficiency is provided. The photoelectric conversion device includes a first silicon semiconductor layer and a second silicon semiconductor layer between a pair of electrodes. The first silicon semiconductor layer is provided over one surface of a crystalline silicon substrate having one conductivity type and has a conductivity type opposite to that of the crystalline silicon substrate, and the second silicon semiconductor layer is provided on the other surface of the crystalline silicon substrate and has a conductivity type which is the same as that of the crystalline silicon substrate. Further, the first silicon semiconductor layer and the second silicon semiconductor layer each have a carrier concentration varying in the film thickness direction.

    摘要翻译： 提供具有低电阻损耗和高转换效率的光电转换装置。 光电转换装置包括在一对电极之间的第一硅半导体层和第二硅半导体层。 第一硅半导体层设置在具有一种导电类型的结晶硅衬底的一个表面上，并且具有与晶体硅衬底相反的导电类型，并且第二硅半导体层设置在晶体硅衬底的另一个表面上 并且具有与晶体硅衬底相同的导电类型。 此外，第一硅半导体层和第二硅半导体层各自具有在膜厚度方向上变化的载流子浓度。

    Photoelectric conversion device
    13.
    发明授权
    Photoelectric conversion device 有权
    光电转换装置

    公开(公告)号：US09437758B2

    公开(公告)日：2016-09-06

    申请号：US13398872

    申请日：2012-02-17

    申请人： Shunpei Yamazaki ,  Fumito Isaka ,  Jiro Nishida

    发明人： Shunpei Yamazaki ,  Fumito Isaka ,  Jiro Nishida

    IPC分类号： H01L31/00 ,  H01L31/0236 ,  H01L31/028 ,  H01L31/068 ,  H01L31/056

    CPC分类号： H01L31/02363 ,  H01L31/028 ,  H01L31/056 ,  H01L31/068 ,  Y02E10/52 ,  Y02E10/547

    摘要： A photoelectric conversion device in photoelectric conversion in a light-absorption region in a crystalline silicon substrate is efficiently performed is provided. In the photoelectric conversion device, a light-transmitting conductive film which has a high effect of passivation of defects on a silicon surface and improves the reflectance on a back electrode side is provided between the back electrode and the crystalline silicon substrate, The light-transmitting conductive film includes an organic compound and an inorganic compound. The organic compound includes 4-phenyl-4′-(9-phenylfluoren-9-yl)triphenylamine. The inorganic compound includes an oxide of a metal belonging to any of Groups 4 to 8 of the periodic table.

    摘要翻译： 提供了一种在晶体硅衬底中的光吸收区域中进行光电转换的光电转换装置。 在光电转换装置中，在背面电极和结晶硅基板之间设置有具有高的硅表面上的缺陷钝化和提高背面电极侧的反射率的透光性导电膜。透光性 导电膜包括有机化合物和无机化合物。 有机化合物包括4-苯基-4' - （9-苯基芴-9-基）三苯胺。 无机化合物包括属于周期表第4至8族中任何一种的金属的氧化物。

    Semiconductor device and communication system
    15.
    发明授权
    Semiconductor device and communication system 有权
    半导体器件和通信系统

    公开(公告)号：US09384439B2

    公开(公告)日：2016-07-05

    申请号：US11596806

    申请日：2005-06-10

    申请人： Shunpei Yamazaki ,  Kiyoshi Kato

    发明人： Shunpei Yamazaki ,  Kiyoshi Kato

    IPC分类号： G06K19/06 ,  G06K19/077 ,  H01L27/12

    CPC分类号： H01L27/1218 ,  G02F1/13338 ,  G02F1/1368 ,  G06K7/10217 ,  G06K19/07749 ,  H01L23/66 ,  H01L24/32 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/1266 ,  H01L29/78678 ,  H01L29/78696 ,  H01L2223/6677 ,  H01L2224/32225 ,  H01L2924/13069 ,  H01L2924/141 ,  H01L2924/1432 ,  H01L2924/1579

    摘要： It is an object of the present invention to provide a semiconductor device in which a sophisticated integrated circuit using a polycrystalline semiconductor is formed over a substrate which is weak with heat such as a plastic substrate or a plastic film substrate and a semiconductor device which transmits/receives power or a signal without wires, and a communication system thereof. One feature of the invention is that a semiconductor device, specifically, a processor, in which a sophisticated integrated circuit is fixed to a plastic substrate which is weak with heat by a stripping method such as a stress peel of process method to transmit/receive power or a signal without wires, for example, with an antenna or a light receiving element.

    摘要翻译： 本发明的目的是提供一种半导体器件，其中使用多晶半导体的复杂集成电路形成在诸如塑料基板或塑料薄膜基板的热弱的基板上，并且半导体器件透射/ 接收电力或没有电线的信号，以及其通信系统。 本发明的一个特征在于，一种半导体装置，特别是一种处理器，其中一个复杂的集成电路固定在一个塑料基板上，该塑料基板通过诸如剥离方法的热而被加热，该剥离方法用于传递/接收电力 或没有电线的信号，例如具有天线或光接收元件。

    Semiconductor device and display device
    16.
    发明授权
    Semiconductor device and display device 有权
    半导体器件和显示器件

    公开(公告)号：US09349750B2

    公开(公告)日：2016-05-24

    申请号：US14077390

    申请日：2013-11-12

    申请人： Hiroyuki Miyake ,  Shunpei Yamazaki ,  Yoshifumi Tanada ,  Manabu Sato ,  Toshinari Sasaki ,  Kenichi Okazaki ,  Junichi Koezuka ,  Takuya Matsuo ,  Hiroshi Matsukizono ,  Yosuke Kanzaki ,  Shigeyasu Mori

    发明人： Hiroyuki Miyake ,  Shunpei Yamazaki ,  Yoshifumi Tanada ,  Manabu Sato ,  Toshinari Sasaki ,  Kenichi Okazaki ,  Junichi Koezuka ,  Takuya Matsuo ,  Hiroshi Matsukizono ,  Yosuke Kanzaki ,  Shigeyasu Mori

    IPC分类号： H01L27/12 ,  H01L29/786

    CPC分类号： H01L27/1225 ,  H01L27/124 ,  H01L29/78648

    摘要： A semiconductor device includes: a transistor including a gate electrode, a gate insulating film over the gate electrode, a semiconductor layer over the gate insulating film, and a source electrode and a drain electrode over the semiconductor layer; a first insulating film comprising an inorganic material over the transistor; a second insulating film comprising an organic material over the first insulating film; a first conductive film over the second insulating film and in a region overlapping with the semiconductor layer; a third insulating film comprising an inorganic material over the first conductive film; and a second conductive film over the third insulating film and in a region overlapping with the first conductive film. The absolute value of a first potential applied to the first conductive film is greater than the absolute value of a second potential applied to the second conductive film.

    摘要翻译： 半导体器件包括：晶体管，包括栅极电极，栅极上的栅极绝缘膜，栅极绝缘膜上的半导体层，以及半导体层上的源极和漏极; 包括晶体管上的无机材料的第一绝缘膜; 包括在所述第一绝缘膜上的有机材料的第二绝缘膜; 在所述第二绝缘膜上并且在与所述半导体层重叠的区域中的第一导电膜; 在所述第一导电膜上包括无机材料的第三绝缘膜; 以及在所述第三绝缘膜上并且在与所述第一导电膜重叠的区域中的第二导电膜。 施加到第一导电膜的第一电位的绝对值大于施加到第二导电膜的第二电位的绝对值。

    Organic optical device and protective component of organic optical device
    18.
    发明授权
    Organic optical device and protective component of organic optical device 有权
    有机光学器件和有机光学器件的保护元件

    公开(公告)号：US09331306B2

    公开(公告)日：2016-05-03

    申请号：US13302213

    申请日：2011-11-22

    申请人： Shunpei Yamazaki ,  Hisao Ikeda ,  Kengo Akimoto

    发明人： Shunpei Yamazaki ,  Hisao Ikeda ,  Kengo Akimoto

    IPC分类号： H01L51/52 ,  H01L27/32

    CPC分类号： H01L51/5253 ,  H01L27/3258 ,  H01L51/5275

    摘要： An organic optical device which can suppress deterioration due to moisture or an impurity is provided. An organic optical device includes a supporting body, a functional layer provided over the supporting body, and a light-emitting body containing an organic compound provided over the functional layer. The functional layer includes an insulating film containing gallium or aluminum, zinc, and oxygen. The supporting body and the functional layer each have a property of transmitting light with a wavelength of greater than or equal to 400 nm and less than or equal to 700 nm. By using the insulating film containing gallium or aluminum, zinc, and oxygen as a protective film, entry of moisture or an impurity into an organic compound or a metal material can be suppressed.

    摘要翻译： 提供了能够抑制由于水分或杂质引起的劣化的有机光学元件。 有机光学器件包括支撑体，设置在支撑体上的功能层，以及包含设置在功能层上的有机化合物的发光体。 功能层包括含有镓或铝，锌和氧的绝缘膜。 支撑体和功能层各自具有透射波长大于或等于400nm且小于或等于700nm的光的性质。 通过使用含有镓或铝，锌和氧的绝缘膜作为保护膜，可以抑制水分或杂质进入有机化合物或金属材料。

    Display device
    19.
    发明授权
    Display device 有权
    显示设备

    公开(公告)号：US09305481B2

    公开(公告)日：2016-04-05

    申请号：US12887179

    申请日：2010-09-21

    申请人： Jun Koyama ,  Shunpei Yamazaki

    发明人： Jun Koyama ,  Shunpei Yamazaki

    IPC分类号： G09G5/00 ,  G09G3/20 ,  G02F1/1345

    CPC分类号： H01L27/1225 ,  G02F1/1345 ,  G02F1/1368 ,  G09G3/20 ,  G09G2310/0275 ,  H01L27/124 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/7869

    摘要： A display device includes a driver circuit including a logic circuit including a first transistor which is a depletion type transistor and a second transistor which is an enhancement type transistor; a signal line which is electrically connected to the driver circuit; a pixel portion including a pixel whose display state is controlled by input of a signal including image data from the driver circuit through the signal line; a reference voltage line to which reference voltage is applied; and a third transistor which is a depletion type transistor and controls electrical connection between the signal line and the reference voltage line. The first to the third transistors each include an oxide semiconductor layer including a channel formation region.

    摘要翻译： 显示装置包括驱动电路，该驱动电路包括逻辑电路，该逻辑电路包括作为耗尽型晶体管的第一晶体管和作为增强型晶体管的第二晶体管; 电连接到驱动电路的信号线; 包括像素的像素，所述像素的显示状态通过输入来自所述驱动电路的通过所述信号线的图像数据的信号进行控制; 施加参考电压的参考电压线; 以及第三晶体管，其是耗尽型晶体管，并控制信号线与参考电压线之间的电连接。 第一至第三晶体管各自包括包括沟道形成区的氧化物半导体层。

    Thin film transistor with an oxide semiconductor layer
    20.
    发明授权
    Thin film transistor with an oxide semiconductor layer 有权
    具有氧化物半导体层的薄膜晶体管

    公开(公告)号：US09257594B2

    公开(公告)日：2016-02-09

    申请号：US12553119

    申请日：2009-09-03

    申请人： Shunpei Yamazaki ,  Kengo Akimoto ,  Shigeki Komori ,  Hideki Uochi

    发明人： Shunpei Yamazaki ,  Kengo Akimoto ,  Shigeki Komori ,  Hideki Uochi

    IPC分类号： H01L29/10 ,  H01L33/00 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66

    CPC分类号： H01L33/0041 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An object is to provide a semiconductor device including a thin film transistor with excellent electrical characteristics and high reliability and a method for manufacturing the semiconductor device with high mass productivity. A main point is to form a low-resistance oxide semiconductor layer as a source or drain region after forming a drain or source electrode layer over a gate insulating layer and to form an oxide semiconductor film thereover as a semiconductor layer. It is preferable that an oxygen-excess oxide semiconductor layer be used as a semiconductor layer and an oxygen-deficient oxide semiconductor layer be used as a source region and a drain region.

    摘要翻译： 本发明的目的是提供一种包括具有优异的电特性和高可靠性的薄膜晶体管的半导体器件以及用于制造具有高质量生产率的半导体器件的方法。 要点是在栅极绝缘层上形成漏极或源电极层之后形成作为源极或漏极区的低电阻氧化物半导体层，并在其上形成作为半导体层的氧化物半导体膜。 优选使用氧 - 过量氧化物半导体层作为半导体层，并且使用缺氧氧化物半导体层作为源极区和漏极区。