公开(公告)号：US10587097B1

公开(公告)日：2020-03-10

申请号：US16045463

申请日：2018-07-25

Applicant: Soraa Laser Diode, Inc.

Inventor： James W. Raring ,  Paul Rudy ,  Chendong Bai

IPC: H01S5/00 ,  H01S5/40 ,  H01S5/22 ,  H01S5/343 ,  B82Y20/00

Abstract: Method and devices for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, are provided. The laser devices include multiple laser emitters integrated onto a substrate (in a module), which emit green or blue laser radiation.

公开(公告)号：US10587090B1

公开(公告)日：2020-03-10

申请号：US14986376

申请日：2015-12-31

Applicant: Soraa Laser Diode, Inc.

Inventor： James W. Raring ,  Paul Rudy ,  Steve DenBaars ,  Troy Trottier

IPC: H01S5/14 ,  H01S5/00 ,  H01S5/323 ,  H01S5/026 ,  H01S5/028

Abstract: The present invention provides a device and method for a laser based light source using a combination of laser diode or waveguide gain element excitation source based on gallium and nitrogen containing materials and wavelength conversion phosphor materials designed for inherent safety. In this invention a violet, blue, or other wavelength laser diode source based on gallium and nitrogen materials is closely integrated with phosphor materials, such as yellow phosphors, to form a compact, high-brightness, and highly-efficient, light source with closed loop design features to yield the light source as an eye safe light source.

公开(公告)号：US10559939B1

公开(公告)日：2020-02-11

申请号：US15937740

申请日：2018-03-27

Applicant: Soraa Laser Diode, Inc.

Inventor： James W. Raring ,  Hua Huang ,  Phillip Skahan ,  Sang-Ho Oh ,  Ben Yonkee ,  Alexander Sztein ,  Qiyuan Wei

IPC: H01S5/028 ,  H01S5/02 ,  H01S5/042 ,  H01S5/343 ,  H01S5/32 ,  H01S5/20 ,  H01S5/22

Abstract: Laser diode technology incorporating etched facet mirror formation and optical coating techniques for reflectivity modification to enable ultra-high catastrophic optical mirror damage thresholds for high power laser diodes.

公开(公告)号：US10551728B1

公开(公告)日：2020-02-04

申请号：US15949608

申请日：2018-04-10

Applicant: Soraa Laser Diode, Inc.

Inventor： Vlad Joseph Novotny ,  Troy Trottier ,  James W. Raring ,  Paul Rudy

IPC: G03B21/20 ,  G02B1/11 ,  G03B21/00 ,  H01S5/30 ,  H01S5/40 ,  H01L33/64 ,  H01L33/00 ,  H01L27/15 ,  H01S5/024 ,  H01S5/00

Abstract: A structured phosphor device includes a frame member comprising wall regions separating multiple openings of window regions. Further, the structured phosphor device includes a phosphor material filled in each of the multiple openings with a first surface thereof being exposed to an excitation light from one or more laser sources to generate an emitted light out of each window region. Additionally, the structured phosphor device includes an anti-reflective film overlying the first surface of the phosphor material. Furthermore, the structured phosphor device includes a substrate attached to a second surface of the phosphor material in each of the multiple openings. Alternatively, the structured phosphor device includes an array of phosphor pixels dividing a plate of single-crystalline or poly-crystalline phosphor material separated by optically reflective and thermally conductive walls. A dynamic lighting system based on the arrays of phosphor pixels for single or full color image projection is also disclosed.

公开(公告)号：US20190186700A1

公开(公告)日：2019-06-20

申请号：US16281912

申请日：2019-02-21

Applicant: Soraa Laser Diode, Inc.

Inventor： Eric Goutain ,  James W. Raring ,  Paul Rudy ,  Hua Huang

IPC: F21K9/60 ,  G02B6/27 ,  F21V9/30 ,  F21K9/62 ,  B82Y20/00 ,  H01S5/00 ,  H01S5/022 ,  H01S5/024 ,  H01S5/22 ,  H01S5/343 ,  H01S5/40 ,  G02B6/42 ,  H01S5/323 ,  G02B6/26 ,  F21V29/71 ,  F21V29/83 ,  F21V23/06 ,  F21V8/00 ,  F21K9/64

CPC classification number: F21K9/60 ,  B82Y20/00 ,  F21K9/62 ,  F21K9/64 ,  F21V9/30 ,  F21V23/06 ,  F21V29/713 ,  F21V29/83 ,  F21Y2101/00 ,  F21Y2115/10 ,  F21Y2115/30 ,  G02B6/0005 ,  G02B6/26 ,  G02B6/27 ,  G02B6/4214 ,  G02B6/4249 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01S5/0021 ,  H01S5/005 ,  H01S5/0085 ,  H01S5/0092 ,  H01S5/02208 ,  H01S5/02224 ,  H01S5/02236 ,  H01S5/02252 ,  H01S5/02276 ,  H01S5/02284 ,  H01S5/02292 ,  H01S5/02469 ,  H01S5/02476 ,  H01S5/0287 ,  H01S5/0425 ,  H01S5/2201 ,  H01S5/32341 ,  H01S5/3235 ,  H01S5/34333 ,  H01S5/4012 ,  H01S5/4025 ,  H01S5/4031 ,  H01S5/4056 ,  H01S2301/14 ,  H01S2304/04

Abstract: A method and device for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, is provided. In various embodiments, the laser device includes plural laser emitters emitting green or blue laser light, integrated a substrate.

公开(公告)号：US20190097722A1

公开(公告)日：2019-03-28

申请号：US15719455

申请日：2017-09-28

Applicant: Soraa Laser Diode, Inc.

Inventor： Melvin McLaurin ,  James W. Raring ,  Paul Rudy ,  Vlad Novotny

IPC: H04B10/116 ,  H01S5/343 ,  H01S5/22 ,  G02B27/09 ,  H01S5/00 ,  H04B10/50

Abstract: A smart light source configured for visible light communication. The light source includes a controller comprising a modem configured to receive a data signal and generate a driving current and a modulation signal based on the data signal. Additionally, the light source includes a light emitter configured as a pump-light device to receive the driving current for producing a directional electromagnetic radiation with a first peak wavelength in the ultra-violet or blue wavelength regime modulated to carry the data signal using the modulation signal. Further, the light source includes a pathway configured to direct the directional electromagnetic radiation and a wavelength converter optically coupled to the pathway to receive the directional electromagnetic radiation and to output a white-color spectrum. Furthermore, the light source includes a beam shaper configured to direct the white-color spectrum for illuminating a target of interest and transmitting the data signal.

公开(公告)号：US10199802B1

公开(公告)日：2019-02-05

申请号：US15728374

申请日：2017-10-09

Applicant: Soraa Laser Diode, Inc.

Inventor： Melvin McLaurin ,  James W. Raring ,  Christiane Elsass

IPC: H01S5/323 ,  H01S5/32 ,  H01S5/343

Abstract: In an example, the present invention provides a gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region, which is configured on either a ({10-10}) crystal orientation or a {10-10} crystal orientation configured with an offcut at an angle toward or away from the [0001] direction. The device also has a GaN region formed overlying the surface region, an active region formed overlying the surface region, and a gettering region comprising a magnesium species overlying the surface region. The device has a p-type cladding region comprising an (InAl)GaN material doped with a plurality of magnesium species formed overlying the active region.

公开(公告)号：US10069282B1

公开(公告)日：2018-09-04

申请号：US15424551

申请日：2017-02-03

Applicant: Soraa Laser Diode, Inc.

Inventor： James W. Raring ,  You-Da Lin ,  Christiane Elsass

IPC: H01S5/00 ,  H01S5/343 ,  H01S5/22 ,  H01S5/028 ,  H01L21/04 ,  H01L21/311 ,  H01L21/28 ,  H01L41/332 ,  H01L21/48 ,  H01L21/027 ,  H01L21/302 ,  H01L21/461 ,  H01L21/469

CPC classification number: H01S5/34333 ,  H01L21/0274 ,  H01L21/042 ,  H01L21/28123 ,  H01L21/302 ,  H01L21/311 ,  H01L21/461 ,  H01L21/469 ,  H01L21/4828 ,  H01L33/08 ,  H01L33/16 ,  H01L41/332 ,  H01S5/0014 ,  H01S5/028 ,  H01S5/0287 ,  H01S5/0425 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/3202 ,  H01S5/3214 ,  H01S5/3216 ,  H01S5/3401

Abstract: An optical device includes a gallium and nitrogen containing substrate comprising a surface region configured in a (20-2-1) orientation, a (30-3-1) orientation, or a (30-31) orientation, within +/−10 degrees toward c-plane and/or a-plane from the orientation. Optical devices having quantum well regions overly the surface region are also disclosed.

公开(公告)号：US10044170B1

公开(公告)日：2018-08-07

申请号：US15682148

申请日：2017-08-21

Applicant: Soraa Laser Diode, Inc.

Inventor： Melvin McLaurin ,  Alexander Sztein ,  Po Shan Hsu ,  James W. Raring

IPC: H01L21/302 ,  H01S5/00 ,  H01S5/343 ,  H01S5/042 ,  H01S5/02 ,  H01S5/028 ,  H01S5/32

Abstract: In an example, the present invention provides a gallium and nitrogen containing multilayered structure, and related method. The structure has a plurality of gallium and nitrogen containing semiconductor substrates, each of the gallium and nitrogen containing semiconductor substrates (“substrates”) having a plurality of epitaxially grown layers overlaying a top-side of each of the substrates. The structure has an orientation of a reference crystal direction for each of the substrates. The structure has a first handle substrate coupled to each of the substrates such that each of the substrates is aligned to a spatial region configured in a selected direction of the first handle substrate, which has a larger spatial region than a sum of a total backside region of plurality of the substrates to be arranged in a tiled configuration overlying the first handle substrate. The reference crystal direction for each of the substrates is parallel to the spatial region in the selected direction within 10 degrees or less. The structure has a first bonding medium provided between the first handle substrate and each of the substrate while maintaining the alignment between reference crystal orientation and the selected direction of the first handle substrate; and a processed region formed overlying each of the substrates configured concurrently while being bonded to the first handle substrate. Depending upon the embodiment, the processed region can include any combination of the aforementioned processing steps and/or steps.

公开(公告)号：US09985417B1

公开(公告)日：2018-05-29

申请号：US15485474

申请日：2017-04-12

Applicant: Soraa Laser Diode, Inc.

Inventor： James W. Raring ,  Hua Huang

IPC: H01S5/00 ,  H01S5/32 ,  H01S5/10 ,  H01S5/30 ,  H01S5/22 ,  H01S5/022 ,  H01S5/02

CPC classification number: H01S5/34333 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01S5/0014 ,  H01S5/0042 ,  H01S5/0202 ,  H01S5/0203 ,  H01S5/0224 ,  H01S5/02268 ,  H01S5/02276 ,  H01S5/1082 ,  H01S5/22 ,  H01S5/3013 ,  H01S5/3202 ,  H01S5/32341 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Gallium and nitrogen containing optical devices operable as laser diodes are disclosed. The devices include a gallium and nitrogen containing substrate member, which may be semipolar or non-polar. The devices include a chip formed from the gallium and nitrogen substrate member. The chip has a width and a length. The devices have a cavity oriented substantially parallel to the length of the chip, a dimension of less than 120 microns characterizing the width of the chip, and a pair of etched facets configured on the cavity of the chip. The pair of etched facets includes a first facet configured at a first end of the cavity and a second facet configured at a second end of the cavity.