公开(公告)号：US20060266387A1

公开(公告)日：2006-11-30

申请号：US11497907

申请日：2006-08-01

Applicant: Steven Verhaverbeke ,  J. Truman ,  Alexander Ko ,  Rick Endo

Inventor： Steven Verhaverbeke ,  J. Truman ,  Alexander Ko ,  Rick Endo

IPC: B08B3/02

CPC classification number: H01L21/67051 ,  B08B3/02 ,  B08B3/12 ,  B08B2203/0288 ,  H01L21/02041 ,  Y10S134/902

Abstract: An apparatus for wet processing individual wafers comprising; a means for holding the wafer; a means for providing acoustic energy to a non-device side of the wafer; and a means for flowing a fluid onto a device side of the wafer.

公开(公告)号：US20060260647A1

公开(公告)日：2006-11-23

申请号：US11496827

申请日：2006-07-31

Applicant: Steven Verhaverbeke ,  Kelly Truman

Inventor： Steven Verhaverbeke ,  Kelly Truman

IPC: C23G1/00 ,  B08B3/00 ,  B08B7/00

CPC classification number: H01L21/02052 ,  B08B3/08 ,  C11D1/29 ,  C11D1/72 ,  C11D3/044 ,  C11D3/32 ,  C11D3/33 ,  C11D3/3947 ,  C11D7/06 ,  C11D7/265 ,  C11D11/0047 ,  C23G5/00 ,  H01L21/67051 ,  Y10S261/07

Abstract: The present invention is a novel cleaning method and a solution for use in a single wafer cleaning process. According to the present invention the cleaning solution comprises ammonium hydroxide (NH4OH), hydrogen peroxide (H2O2), water (H2O) and a chelating agent. In an embodiment of the present invention the cleaning solution also contains a surfactant. And still yet another embodiment of the present invention the cleaning solution also comprises a dissolved gas such as H2. In a particular embodiment of the present invention, this solution is used by spraying or dispensing it on a spinning wafer.

公开(公告)号：US20060260644A1

公开(公告)日：2006-11-23

申请号：US11497492

申请日：2006-07-31

Applicant: Steven Verhaverbeke ,  J. Truman ,  Alexander Ko ,  Rick Endo

Inventor： Steven Verhaverbeke ,  J. Truman ,  Alexander Ko ,  Rick Endo

IPC: B08B6/00

CPC classification number: H01L21/67051 ,  B08B3/02 ,  B08B3/12 ,  B08B2203/0288 ,  H01L21/02041 ,  Y10S134/902

Abstract: An apparatus for wet processing individual wafers comprising; a means for holding the wafer; a means for providing acoustic energy to a non-device side of the wafer; and a means for flowing a fluid onto a device side of the wafer.

公开(公告)号：US20060260642A1

公开(公告)日：2006-11-23

申请号：US11496895

申请日：2006-07-31

Applicant: Steven Verhaverbeke ,  J. Truman ,  Alexander Ko ,  Rick Endo

Inventor： Steven Verhaverbeke ,  J. Truman ,  Alexander Ko ,  Rick Endo

IPC: B08B6/00 ,  C23G1/00 ,  B08B3/00 ,  B08B7/00

CPC classification number: H01L21/67051 ,  B08B3/02 ,  B08B3/12 ,  B08B2203/0288 ,  H01L21/02041 ,  Y10S134/902

Abstract: An apparatus for wet processing individual wafers comprising; a means for holding the wafer; a means for providing acoustic energy to a non-device side of the wafer; and a means for flowing a fluid onto a device side of the wafer.

公开(公告)号：US07037842B2

公开(公告)日：2006-05-02

申请号：US10637725

申请日：2003-08-07

Applicant: Steven Verhaverbeke ,  J. Kelly Truman

Inventor： Steven Verhaverbeke ,  J. Kelly Truman

IPC: H01L21/302 ,  H01L21/461

CPC classification number: H01L21/30604 ,  H01L21/02019 ,  H01L21/02052 ,  H01L21/67051 ,  H01L21/67075 ,  H01L21/6708 ,  Y10S438/907

Abstract: A method and apparatus for processing a wafer is described. According to the present invention a wafer is placed on a substrate support. A liquid is then fed through a conduit having an output opening over the wafer. A gas is dissolved in the liquid prior to the liquid reaching the output over the wafer by flowing a gas into the conduit through a venturi opening formed in the conduit. The liquid with dissolved gas is then fed through the opening and onto the wafer where it can be used to etch, clean, or rinse a wafer.

公开(公告)号：US20060046467A1

公开(公告)日：2006-03-02

申请号：US10927572

申请日：2004-08-26

Applicant: Steven Verhaverbeke

Inventor： Steven Verhaverbeke

IPC: H01L21/4763

CPC classification number: H01L21/31133 ,  G03F7/427 ,  H01L21/76808

Abstract: A method of fabricating a semiconductor device. The method comprises creating a via in a dielectric layer that is formed on a substrate, filling the via, and optionally, the surface of the dielectric layer with a sacrificial material, patterning a first photoresist layer on the sacrificial material to define a trench for the semiconductor device, removing the first photoresist layer without affecting the sacrificial material, repatterning a second photoresist layer on the sacrificial material to define the trench for the semiconductor device, forming the trench, and removing the second photoresist layer and the sacrificial material completely after the trench is formed.

Abstract translation: 一种制造半导体器件的方法。 该方法包括在形成在衬底上的电介质层中形成通孔，用牺牲材料填充通孔和任选地介电层的表面，在牺牲材料上图案化第一光致抗蚀剂层以限定用于 半导体器件，去除第一光致抗蚀剂层而不影响牺牲材料，重新绘图牺牲材料上的第二光致抗蚀剂层以限定用于半导体器件的沟槽，形成沟槽，以及在沟槽之后完全去除第二光致抗蚀剂层和牺牲材料 形成了。

公开(公告)号：US06524940B2

公开(公告)日：2003-02-25

申请号：US09843229

申请日：2001-04-26

Applicant: Steven Verhaverbeke ,  J. Kelly Truman

Inventor： Steven Verhaverbeke ,  J. Kelly Truman

IPC: H01L2144

CPC classification number: C23C8/40 ,  C23C8/02 ,  C23C8/10

Abstract: The present invention is a novel termination of silicon dioxide films for use in a single wafer cleaning tool. According to the present invention a silicon dioxide film is formed on a silicon substrate and the film is then terminated with ammonium oxide (—O—NH4). In an embodiment of the present invention the film is terminated by dispensing a mixture containing ammonium oxide onto the film. The present invention also provides a method of forming a gate insulator as well as a gate insulator device.

Abstract translation: 本发明是用于单个晶片清洁工具中的二氧化硅膜的新型终止。 根据本发明，在硅衬底上形成二氧化硅膜，然后用氧化铵（-O-NH 4）封端。 在本发明的一个实施方案中，通过将含有氧化铵的混合物分配到膜上来终止膜。 本发明还提供一种形成栅极绝缘体的方法以及栅极绝缘体器件。

公开(公告)号：US6165912A

公开(公告)日：2000-12-26

申请号：US395398

申请日：1999-09-14

Applicant: Christopher F. McConnell ,  Steven Verhaverbeke

Inventor： Christopher F. McConnell ,  Steven Verhaverbeke

IPC: C23C18/28 ,  C23C18/16 ,  C23C18/31 ,  H01L21/288 ,  H05K3/18 ,  H01L21/31 ,  B05D1/18 ,  B05D3/10

CPC classification number: H01L21/288 ,  C23C18/1666 ,  C23C18/1831 ,  C23C18/54 ,  H05K3/187

Abstract: The present invention provides methods of electrolessly depositing metal onto the surfaces of electronic components using an enclosable single vessel. The methods of the present invention include contacting the electronic components with an activation solution followed by contacting the electronic components with a metal deposition solution. In a preferred embodiment of the present invention, the oxygen levels in the activation solution and metal deposition solution are controlled in a manner for improved processing results. In another preferred embodiment of the present invention, the activation and metal deposition solutions are used one time without reuse.

Abstract translation: 本发明提供使用可封闭的单一容器将金属无电沉积在电子部件的表面上的方法。 本发明的方法包括使电子部件与激活溶液接触，然后使电子部件与金属沉积溶液接触。 在本发明的优选实施方案中，活化溶液和金属沉积溶液中的氧含量以改进的处理结果的方式进行控制。 在本发明的另一优选实施方案中，使用一次活化和金属沉积溶液而不再使用。

公开(公告)号：US5922624A

公开(公告)日：1999-07-13

申请号：US772338

申请日：1996-12-23

Applicant: Steven Verhaverbeke ,  Mark Heyns ,  Menso Hendriks ,  Rene de Blank

Inventor： Steven Verhaverbeke ,  Mark Heyns ,  Menso Hendriks ,  Rene de Blank

IPC: H01L21/306 ,  H01L21/311 ,  C03C15/00 ,  B44C1/22

CPC classification number: H01L21/02049 ,  H01L21/31116

Abstract: Method for semiconductor processing comprising etching of oxide layers, especially etching thick SiO.sub.2 layers and/or last step in the cleaning process wherein the oxide layers are etched in the gas phase with a mixture of hydrogen fluoride and one or more carboxylic acids, eventually in admixture with water.

Abstract translation: 用于半导体处理的方法包括蚀刻氧化物层，特别是蚀刻厚的SiO 2层和/或在清洁过程中的最后步骤，其中氧化物层在气相中用氟化氢和一种或多种羧酸的混合物进行蚀刻，最终以混合物 与水。

公开(公告)号：US20150295099A1

公开(公告)日：2015-10-15

申请号：US14371702

申请日：2013-01-09

Applicant: Kurtis Leschkies ,  Steven Verhaverbeke ,  Roman Gouk ,  Robert Visser

Inventor： Kurtis Leschkies ,  Steven Verhaverbeke ,  Roman Gouk ,  Robert Visser

IPC: H01L31/0288 ,  H01L31/028 ,  H01L31/0368 ,  H01L31/076 ,  H01L31/056 ,  H01L31/075 ,  H01L31/077 ,  H01L31/0224 ,  H01L31/0376

CPC classification number: H01L31/0288 ,  H01L31/022466 ,  H01L31/022475 ,  H01L31/022483 ,  H01L31/028 ,  H01L31/03682 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/056 ,  H01L31/075 ,  H01L31/076 ,  H01L31/077 ,  Y02E10/52 ,  Y02E10/548

Abstract: Embodiments of the invention generally provide a silicon-based photovoltaic (PV) device containing a high work-function (HWF) buffer layer disposed between a transparent conductive oxide (TCO) layer and a p-type silicon-based layer of a p-i-n junction. The PV device generally has a transparent substrate, a first TCO layer disposed on the transparent substrate, a HWF buffer layer disposed on the first TCO layer, a p-i-n junction disposed on the high work-function buffer layer, a second TCO layer disposed on the n-type silicon-based layer, and a metallic reflective layer disposed on the second TCO layer. The p-i-n junction contains an intrinsic layer disposed between a p-type silicon-based layer and an n-type silicon-based layer, and the p-type silicon-based layer is in contact with the HWF buffer layer.

Abstract translation: 本发明的实施例通常提供一种硅基光伏（PV）装置，其包含设置在透明导电氧化物（TCO）层和p-i-n结的p型硅基层之间的高功函数（HWF）缓冲层。 PV器件通常具有透明衬底，设置在透明衬底上的第一TCO层，设置在第一TCO层上的HWF缓冲层，设置在高功函数缓冲层上的pin结，设置在第二TCO层上的第二TCO层 n型硅基层和设置在第二TCO层上的金属反射层。 p-i-n结包含设置在p型硅基层和n型硅基层之间的本征层，并且p型硅基层与HWF缓冲层接触。