Proximity sensor
    16.
    发明授权

    公开(公告)号:US11894339B2

    公开(公告)日:2024-02-06

    申请号:US17121198

    申请日:2020-12-14

    CPC classification number: H01L25/042 G01S17/08 H01L25/0753 H01L33/62

    Abstract: A method of manufacturing a sensor device includes obtaining a semiconductor die structure comprising a transmitter and a receiver. Then, a first sacrificial stud is affixed to the transmitter and a second sacrificial stud is affixed to the receiver. The semiconductor die is affixed to a lead frame, and pads on the semiconductor die structure are wirebonded to the lead frame. The lead frame, the semiconductor die structure, and the wirebonds are encapsulated in a molding compound, while the tops of the first and second sacrificial studs are left exposed. The first and second sacrificial studs prevent the molding compound from encapsulating the transmitter and the receiver, and are removed to expose the transmitter in a first cavity and the receiver in a second cavity. In some examples, the semiconductor die structure includes a first semiconductor die comprising the transmitter and a second semiconductor die comprising the receiver.

    THREE DIMENSIONAL PACKAGE FOR SEMICONDUCTOR DEVICES AND EXTERNAL COMPONENTS

    公开(公告)号:US20220208655A1

    公开(公告)日:2022-06-30

    申请号:US17135700

    申请日:2020-12-28

    Abstract: In a described example, an apparatus includes: a package substrate having a die mount portion and lead portions; at least one semiconductor device die over the die mount portion of the package substrate, the semiconductor device die having bond pads on an active surface facing away from the package substrate; electrical connections between at least one of the bond pads and one of the lead portions; a post interconnect over at least one of the bond pads, the post interconnect extending away from the active surface of the semiconductor device die; and a dielectric material covering a portion of the package substrate, the semiconductor device die, a portion of the post interconnect, and the electrical connections, forming a packaged semiconductor device, wherein the post interconnect extends through the dielectric material and had an end facing away from the semiconductor device die that is exposed from the dielectric material.

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