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    Conductive bond structure to increase membrane sensitivity in MEMS device
    13.
    发明授权
    Conductive bond structure to increase membrane sensitivity in MEMS device 有权

    公开(公告)号：US11292715B2

    公开(公告)日：2022-04-05

    申请号：US16601749

    申请日：2019-10-15

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Hung-Hua Lin ,  Chia-Ming Hung ,  Xin-Hua Huang ,  Yuan-Chih Hsieh

    IPC: B81C3/00 ,  B81B7/00 ,  B06B1/02 ,  B81C1/00

    Abstract: Various embodiments of the present disclosure are directed towards a microelectromechanical system (MEMS) device including a conductive bonding structure disposed between a substrate and a MEMS substrate. An interconnect structure overlies the substrate. The MEMS substrate overlies the interconnect structure and includes a moveable membrane. A dielectric structure is disposed between the interconnect structure and the MEMS substrate. The conductive bonding structure is sandwiched between the interconnect structure and the MEMS substrate. The conductive bonding structure is spaced laterally between sidewalls of the dielectric structure. The conductive bonding structure, the MEMS substrate, and the interconnect structure at least partially define a cavity. The moveable membrane overlies the cavity and is spaced laterally between sidewalls of the conductive bonding structure.

    Method of Improving Getter Efficiency by Increasing Superficial Area
    14.
    发明申请
    Method of Improving Getter Efficiency by Increasing Superficial Area 有权
    通过增加表面积来提高吸气效率的方法

    公开(公告)号：US20150102432A1

    公开(公告)日：2015-04-16

    申请号：US14053751

    申请日：2013-10-15

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Yuan-Chih Hsieh ,  Li-cheng Chu ,  Hung-Hua Lin ,  Chih-Jen Chan ,  Lan-Lin Chao

    IPC: B81C1/00 ,  H01L21/322 ,  B81B7/00 ,  H01L23/26

    CPC classification number: B81B7/0038 ,  B81B7/0025 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2203/0315 ,  B81C1/00285 ,  B81C2203/0118 ,  H01L21/3223 ,  H01L23/26 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: The present disclosure relates to a method of gettering that provides for a high efficiency gettering process by depositing a gettering material on a roughened substrate surface, and an associated apparatus. In some embodiments, the method is performed by providing a substrate into a processing chamber having residual gases. One or more cavities are formed in the substrate at locations between bonding areas on a top surface of the substrate. Respective cavities have roughened interior surfaces that vary in a plurality of directions. A getter layer is deposited into the one or more cavities. The roughened interior surfaces of the one or more cavities enable the substrate to more effectively absorb the residual gases, thereby increasing the efficiency of the gettering process.

    Abstract translation: 本公开涉及一种吸气方法，其通过在粗糙化的基底表面上沉积吸气材料和相关联的装置来提供高效吸气过程。 在一些实施例中，通过将衬底提供到具有残留气体的处理室中来执行该方法。 在衬底的顶部表面上的结合区域之间的位置处形成一个或多个空腔。 相应的空腔具有在多个方向上变化的内表面的粗糙化。 吸气剂层沉积到一个或多个空腔中。 一个或多个空腔的粗糙化的内表面使得基底能够更有效地吸收残余气体，从而提高吸气过程的效率。

    Method for manufacturing a MEMS device by first hybrid bonding a CMOS wafer to a MEMS wafer
    18.
    发明授权
    Method for manufacturing a MEMS device by first hybrid bonding a CMOS wafer to a MEMS wafer 有权

    公开(公告)号：US10294098B2

    公开(公告)日：2019-05-21

    申请号：US15855449

    申请日：2017-12-27

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Hung-Hua Lin ,  Chang-Ming Wu ,  Chung-Yi Yu ,  Ping-Yin Liu ,  Jung-Huei Peng

    IPC: B81B7/00 ,  B81C1/00 ,  H01L23/00

    Abstract: A microelectromechanical system (MEMS) structure and method of forming the MEMS device, including forming a first metallization structure over a complementary metal-oxide-semiconductor (CMOS) wafer, where the first metallization structure includes a first sacrificial oxide layer and a first metal contact pad. A second metallization structure is formed over a MEMS wafer, where the second metallization structure includes a second sacrificial oxide layer and a second metal contact pad. The first metallization structure and second metallization structure are then bonded together. After the first metallization structure and second metallization structure are bonded together, patterning and etching the MEMS wafer to form a MEMS element over the second sacrificial oxide layer. After the MEMS element is formed, removing the first sacrificial oxide layer and second sacrificial oxide layer to allow the MEMS element to move freely about an axis.

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