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    IN-SITU METAL GATE RECESS PROCESS FOR SELF-ALIGNED CONTACT APPLICATION
    14.
    发明申请
    IN-SITU METAL GATE RECESS PROCESS FOR SELF-ALIGNED CONTACT APPLICATION 有权
    用于自对准接触应用的现场金属门接收过程

    公开(公告)号：US20140256124A1

    公开(公告)日：2014-09-11

    申请号：US13792258

    申请日：2013-03-11

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD

    Inventor： Chia-Jung Hsu ,  Gin-Chen Huang ,  Yi-An Lin ,  Neng-Kuo Chen ,  Sey-Ping Sun ,  Clement Hsingjen Wann

    IPC: H01L29/40

    CPC classification number: H01L29/401 ,  B24B37/042 ,  H01L21/3212 ,  H01L21/32134 ,  H01L21/67207 ,  H01L21/67219

    Abstract: A method of producing a metal gate structure. The method includes forming a gate structure above a semiconductor substrate and performing one or more chemical metal planarization (CMP) processes to planarize the formed gate structure using a CMP tool. An in situ gate etching process is performed in a CMP cleaner of the CMP tool to form a gate recess. A contact etch stop layer (CESL) can then be deposited in the formed gate recess and one or more CMP processes performed to planarize the CESL.

    Abstract translation: 一种制造金属栅极结构的方法。 该方法包括在半导体衬底之上形成栅极结构，并执行一个或多个化学金属平面化（CMP）工艺，以使用CMP工具对形成的栅极结构进行平坦化。 在CMP工具的CMP清洁器中执行原位栅极蚀刻工艺以形成栅极凹槽。 然后可以将接触蚀刻停止层（CESL）沉积在所形成的栅极凹部中，并执行一个或多个CMP工艺以平坦化CESL。

    CHEMICAL MECHANICAL POLISHING METHOD USING SLURRY COMPOSITION CONTAINING N-OXIDE COMPOUND
    16.
    发明申请
    CHEMICAL MECHANICAL POLISHING METHOD USING SLURRY COMPOSITION CONTAINING N-OXIDE COMPOUND 有权
    使用含有氧化镍化合物的浆料组合物的化学机械抛光方法

    公开(公告)号：US20160329215A1

    公开(公告)日：2016-11-10

    申请号：US15215794

    申请日：2016-07-21

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd. ,  UWiZ Technology Co., Ltd.

    Inventor： Chia-Jung Hsu ,  Yun-Lung Ho ,  Neng-Kuo Chen ,  Wen-Feng Chueh ,  Sey-Ping Sun ,  Song-Yuan Chang

    IPC: H01L21/306 ,  H01L29/66 ,  H01L21/762 ,  H01L21/02 ,  C09G1/02 ,  C09G1/04

    CPC classification number: H01L21/30625 ,  C09G1/02 ,  C09G1/04 ,  H01L21/02532 ,  H01L21/76224 ,  H01L29/66636 ,  H01L29/66795

    Abstract: The present disclosure relates to a method of performing a chemical mechanical planarization (CMP) process with a high germanium-to-oxide removal selectivity and a low rate of germanium recess formation. The method is performed by providing a semiconductor substrate having a plurality of germanium compound regions including germanium interspersed between a plurality of oxide regions including an oxide. A slurry is then provided onto the semiconductor substrate. The slurry has an oxidant and an etching inhibitor configured to reduce a removal rate of the germanium relative to the oxide. A CMP process is then performed by bringing a chemical mechanical polishing pad in contact with top surfaces of the plurality of germanium compound regions and the plurality of oxide regions.

    Abstract translation: 本公开涉及一种执行具有高锗 - 氧化物去除选择性和低锗锗凹陷形成速率的化学机械平面化（CMP）工艺的方法。 该方法通过提供具有多个锗化合物区域的半导体衬底来进行，所述锗化合物区域包括散布在包括氧化物的多个氧化物区域之间的锗。 然后将浆料提供到半导体衬底上。 浆料具有氧化剂和蚀刻抑制剂，其被配置为降低锗相对于氧化物的去除速率。 然后通过使化学机械抛光垫与多个锗化合物区域和多个氧化物区域的顶表面接触来进行CMP工艺。

    Self aligned contact formation
    17.
    发明授权
    Self aligned contact formation 有权
    自对准接触形成

    公开(公告)号：US08921136B2

    公开(公告)日：2014-12-30

    申请号：US13743523

    申请日：2013-01-17

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Neng-Kuo Chen ,  Shao-Ming Yu ,  Gin-Chen Huang ,  Chia-Jung Hsu ,  Sey-Ping Sun ,  Clement Hsingjen Wann

    IPC: H01L21/66 ,  H01L21/302 ,  H01L21/461 ,  H01L21/336 ,  H01L21/8238 ,  H01L21/00 ,  H01L23/29 ,  H01L29/76 ,  H01L29/66 ,  H01L27/088 ,  H01L29/788 ,  H01L21/02 ,  H01L29/78

    CPC classification number: H01L23/528 ,  H01L21/02167 ,  H01L21/76897 ,  H01L23/53257 ,  H01L27/088 ,  H01L29/4916 ,  H01L29/66545 ,  H01L29/78 ,  H01L2924/0002 ,  Y10S438/975 ,  H01L2924/00

    Abstract: The present disclosure relates to methods of forming a self-aligned contact and related apparatus. In some embodiments, the method forms a plurality of gate lines interspersed between a plurality of dielectric lines, wherein the gate lines and the dielectric lines extend in a first direction over an active area. One or more of the plurality of gate lines are into a plurality of gate line sections aligned in the first direction. One or more of the plurality of dielectric lines are cut into a plurality of dielectric lines sections aligned in the first direction. A dummy isolation material is deposited between adjacent dielectric sections in the first direction and between adjacent gate line sections in the first direction. One or more self-aligned metal contacts are then formed by replacing a part of one or more of the plurality of dielectric lines over the active area with a contact metal.

    Abstract translation: 本公开涉及形成自对准接触的方法和相关装置。 在一些实施例中，该方法形成了散布在多个介质线之间的多条栅极线，其中栅极线和介质线在有效区域上沿第一方向延伸。 多条栅极线中的一条或多条是沿着第一方向排列的多个栅极线部分。 多个介质线中的一个或多个被切割成沿第一方向排列的多个介质线段。 虚设隔离材料沿第一方向沉积在相邻介质部分之间并且在第一方向上沉积在相邻的栅线部分之间。 然后通过用接触金属代替有效区域上的多个介质线中的一个或多个的一部分来形成一个或多个自对准的金属接触。

    Self Aligned Contact Formation
    18.
    发明申请
    Self Aligned Contact Formation 有权
    自我联系联络

    公开(公告)号：US20140197499A1

    公开(公告)日：2014-07-17

    申请号：US13743523

    申请日：2013-01-17

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Neng-Kuo Chen ,  Shao-Ming Yu ,  Gin-Chen Huang ,  Chia-Jung Hsu ,  Sey-Ping Sun ,  Clement Hsingjen Wann

    IPC: H01L21/02 ,  H01L29/78

    CPC classification number: H01L23/528 ,  H01L21/02167 ,  H01L21/76897 ,  H01L23/53257 ,  H01L27/088 ,  H01L29/4916 ,  H01L29/66545 ,  H01L29/78 ,  H01L2924/0002 ,  Y10S438/975 ,  H01L2924/00

    Abstract: The present disclosure relates to methods of forming a self-aligned contact and related apparatus. In some embodiments, the method forms a plurality of gate lines interspersed between a plurality of dielectric lines, wherein the gate lines and the dielectric lines extend in a first direction over an active area. One or more of the plurality of gate lines are into a plurality of gate line sections aligned in the first direction. One or more of the plurality of dielectric lines are cut into a plurality of dielectric lines sections aligned in the first direction. A dummy isolation material is deposited between adjacent dielectric sections in the first direction and between adjacent gate line sections in the first direction. One or more self-aligned metal contacts are then formed by replacing a part of one or more of the plurality of dielectric lines over the active area with a contact metal.

    Abstract translation: 本公开涉及形成自对准接触的方法和相关装置。 在一些实施例中，该方法形成了散布在多个介质线之间的多条栅极线，其中栅极线和介质线在有效区域上沿第一方向延伸。 多条栅极线中的一条或多条是沿着第一方向排列的多个栅极线部分。 多个介质线中的一个或多个被切割成沿第一方向排列的多个介质线段。 虚设隔离材料沿第一方向沉积在相邻介质部分之间并且在第一方向上沉积在相邻的栅线部分之间。 然后通过用接触金属代替有效区域上的多个介质线中的一个或多个的一部分来形成一个或多个自对准的金属接触。

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