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89 条记录 (耗时 0.027 秒)

    BUBBLE COLUMN TYPE HYDROCARBON SYNTHESIS REACTOR, AND SLURRY LEVEL DETECTING METHOD
    11.
    发明申请
    BUBBLE COLUMN TYPE HYDROCARBON SYNTHESIS REACTOR, AND SLURRY LEVEL DETECTING METHOD 有权
    泡沫柱型烃合成反应器和浆液检测方法

    公开(公告)号：US20100242594A1

    公开(公告)日：2010-09-30

    申请号：US12733892

    申请日：2008-09-26

    申请人： Yasuhiro Onishi ,  Yuzuru Kato ,  Eiichi Yamada

    发明人： Yasuhiro Onishi ,  Yuzuru Kato ,  Eiichi Yamada

    IPC分类号： G01F23/14 ,  B01J8/02

    CPC分类号： G01F23/168 ,  B01J8/1809 ,  B01J8/1818 ,  B01J8/226 ,  B01J2208/00132 ,  B01J2208/00539 ,  B01J2208/00584 ,  B01J2208/0061 ,  B01J2219/002 ,  B01J2219/0022 ,  B01J2219/00234 ,  C10G2/342 ,  G01F23/18 ,  G01F23/185

    摘要： There is provided a bubble column type hydrocarbon synthesis reactor which synthesizes a hydrocarbon compound by a chemical reaction of a synthesis gas including hydrogen and carbon monoxide as main components, and a slurry having solid catalyst particles suspended in liquid. The hydrocarbon synthesis reactor includes a reactor main body which accommodates the slurry, a synthesis gas supplying section which supplies the synthesis gas to the slurry; one pressure sensor which is arranged higher than the liquid level of the slurry to measure the pressure of the synthesis gas above the liquid level, another pressure sensor which is arranged lower than the liquid level of the slurry to measure the pressure of the slurry, and a liquid level detecting device which detects a liquid level position of the slurry on the basis of measurement results of the pressure sensors. A plurality of the other pressure sensors are provided at arbitrary intervals in an axial direction of the reactor main body.

    摘要翻译： 提供了一种泡沫塔型烃合成反应器，其通过包含氢和一氧化碳作为主要成分的合成气的化学反应和悬浮在液体中的固体催化剂颗粒的浆料合成烃化合物。 烃合成反应器包括容纳浆料的反应器主体，向浆料供给合成气的合成气供给部; 一个压力传感器被布置成高于浆液的液面以测量液面以上的合成气的压力，另一压力传感器布置成低于浆液的液面以测量浆料的压力，以及 液位检测装置，其基于压力传感器的测量结果来检测浆料的液面位置。 多个其他压力传感器以反应器主体的轴向任意间隔设置。

    SEMICONDUCTOR OPTICAL MODULATOR
    12.
    发明申请
    SEMICONDUCTOR OPTICAL MODULATOR 有权
    半导体光学调制器

    公开(公告)号：US20090034904A1

    公开(公告)日：2009-02-05

    申请号：US11817312

    申请日：2006-03-08

    申请人： Ken Tsuzuki ,  Nobuhiro Kikuchi ,  Eiichi Yamada

    发明人： Ken Tsuzuki ,  Nobuhiro Kikuchi ,  Eiichi Yamada

    IPC分类号： G02B6/12 ,  H01L31/0264

    CPC分类号： G02F1/025 ,  G02F2201/07 ,  G02F2202/102

    摘要： There is provided a semiconductor optical modulator capable of performing a stable operation and having an excellent voltage-current characteristic to an electric field while exhibiting the characteristic of a semiconductor optical modulator with an n-i-n structure. The semiconductor optical modulator includes a waveguide structure that is formed by sequentially growing an n-type InP clad layer (11), a semiconductor core layer (13) having an electro-optic effect, a p-InAlAs layer (15), and an n-type InP clad layer (16). An electron affinity of the p-InAlAs layer (15) is smaller than an electron affinity of the n-type InP clad layer (16). In the waveguide structure having such a configuration, a non-dope InP clad layer (12) and a non-dope InP clad layer (14) may be respectively provided between the n-type InP clad layer (11) and the semiconductor core layer (13), and between the semiconductor core layer (13) and the p-InAlAs layer (15).

    摘要翻译： 提供了一种能够执行稳定操作并且具有优异的电场电压特性的半导体光调制器，同时具有n-i-n结构的半导体光调制器的特性。 半导体光调制器包括通过依次生长n型InP包覆层（11），具有电光效应的半导体芯层（13），p-InAlAs层（15）和 n型InP覆层（16）。 p-InAlAs层（15）的电子亲和力小于n型InP包覆层（16）的电子亲和力。 在具有这种结构的波导结构中，非掺杂InP覆盖层（12）和非掺杂InP覆盖层（14）可以分别设置在n型InP覆盖层（11）和半导体芯层 （13），以及半导体芯层（13）和p-InAlAs层（15）之间。

    Recording method, managing method, and recording apparatus
    14.
    发明授权
    Recording method, managing method, and recording apparatus 有权
    记录方法，管理方法和记录装置

    公开(公告)号：US06385690B1

    公开(公告)日：2002-05-07

    申请号：US09513482

    申请日：2000-02-25

    申请人： Kenichi Iida ,  Eiichi Yamada ,  Shuji Ohbayashi

    发明人： Kenichi Iida ,  Eiichi Yamada ,  Shuji Ohbayashi

    IPC分类号： G06F1200

    CPC分类号： G11C7/16 ,  G11B20/12 ,  Y10S707/99953

    摘要： A recording method and apparatus for recording data that is continuously input in a nonvolatile memory records the data discretely in a plurality of blocks under control of file management data, is capable of high speed data recording by only recording data in a recording medium during data recording and updating of file management data at a time after completion of data recording.

    摘要翻译： 用于记录连续输入到非易失性存储器中的数据的记录方法和装置在文件管理数据的控制下离散地记录在多个块中的数据能够通过在数据记录期间仅在记录介质中记录数据进行高速数据记录 以及在完成数据记录之后的时间更新文件管理数据。

    Semiconductor device having insulator film with different prescribed thickness portions
    18.
    发明授权
    Semiconductor device having insulator film with different prescribed thickness portions 失效
    具有不同规定厚度部分的绝缘膜的半导体装置

    公开(公告)号：US4012763A

    公开(公告)日：1977-03-15

    申请号：US372900

    申请日：1973-06-25

    申请人： Eiichi Yamada ,  Yasunobu Kosa ,  Eiichiro Sato

    发明人： Eiichi Yamada ,  Yasunobu Kosa ,  Eiichiro Sato

    IPC分类号： H01L21/033 ,  H01L21/22 ,  H01L21/225 ,  H01L29/732 ,  H01L29/72 ,  H01L29/34

    CPC分类号： H01L29/7322 ,  H01L21/033 ,  H01L21/22 ,  H01L21/2255

    摘要： An improved transistor structure having a substrate, base and emitter regions formed in the major surface thereof includes an insulating film having first and second portions. The first portion of the insulating film is formed on the major surface of the substrate covering the pn junctions between the emitter, base and substrate proper, while a second portion of the film is spaced apart from the pn junction. The second portion of the film has a thickness larger than that of the first portion of the film.

    摘要翻译： 一种改进的晶体管结构，其具有形成在其主表面上的衬底，基极和发射极区域，其包括具有第一和第二部分的绝缘膜。 绝缘膜的第一部分形成在覆盖发射极，基底和衬底本体之间的pn结的衬底的主表面上，而膜的第二部分与pn结相隔开。 膜的第二部分的厚度大于膜的第一部分的厚度。