公开(公告)号：US20050277281A1

公开(公告)日：2005-12-15

申请号：US10864957

申请日：2004-06-10

申请人： Valery Dubin ,  Richard Emery ,  Ming Fang

发明人： Valery Dubin ,  Richard Emery ,  Ming Fang

IPC分类号： H01L21/44 ,  H01L21/4763 ,  H01L21/60 ,  H01L21/768 ,  H01L23/48 ,  H01L23/49

CPC分类号： B81C1/00301 ,  B81B2207/097 ,  H01L24/11 ,  H01L24/72 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05024 ,  H01L2224/05548 ,  H01L2224/05569 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/05671 ,  H01L2224/05681 ,  H01L2224/13008 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/00014

摘要： A method for making a compliant interconnect with two or more layers of metal is described herein.

摘要翻译： 本文描述了用于制造具有两层或多层金属的柔性互连的方法。

公开(公告)号：US20050082552A1

公开(公告)日：2005-04-21

申请号：US10864188

申请日：2004-06-08

申请人： Ming Fang ,  Valery Dubin ,  Daoqiang Lu

发明人： Ming Fang ,  Valery Dubin ,  Daoqiang Lu

IPC分类号： G02B6/42 ,  H01L21/00 ,  H01L21/44 ,  H01L21/48 ,  H01L21/50 ,  H01L21/60 ,  H01L23/48 ,  H01L23/485 ,  H01L23/52 ,  H01L27/15 ,  H01L29/267 ,  H01L31/12 ,  H01L33/00

CPC分类号： H01L24/16 ,  G02B6/4204 ,  G02B6/4232 ,  H01L24/11 ,  H01L24/81 ,  H01L2224/1134 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/16 ,  H01L2224/81193 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/14 ,  H01L2924/15151 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/00014 ,  H01L2924/00015 ,  H01L2224/29099

摘要： The invention provides bumps between a die and a substrate with a height greater than or equal to a height of a waveguide between the die and the substrate. The bumps may be formed on a die prior to that die being singulated from a wafer.

公开(公告)号：US20050077082A1

公开(公告)日：2005-04-14

申请号：US10685659

申请日：2003-10-14

申请人： Ming Fang ,  Valery Dubin ,  Scott Haight

发明人： Ming Fang ,  Valery Dubin ,  Scott Haight

IPC分类号： C25D3/32 ,  C25D5/02 ,  H01L21/288 ,  H01L21/60 ,  H01R12/04

CPC分类号： H01L24/11 ,  C25D3/32 ,  C25D5/02 ,  H01L21/2885 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/00

摘要： A device includes an integrated circuit and a deposited tin in electrical contact with a portion of the integrated circuit. The deposited tin is formed by electrodeposition from a bath. The deposited tin includes a residue characteristic of the bath. The bath includes a bath-soluble tin compound, a strong acid, and a sulfopropylated anionic surfactant. In another aspect, a composition includes between approximately 20 and 40 grams per liter of one of stannous methane sulfonate, stannous sulfate, and a mixture thereof, between approximately 100 and 200 grams per liter of one of methanesulfonic acid, sulfuric acid, and a mixture thereof, and between approximately 1 and 2 grams per liter of one or more polyethyleneglycol alkyl-3-sulfopropyl diethers. In another aspect, a method includes electroplating tin with a current density of greater than approximately 30 mA/cm2 and a plating efficiency of greater than approximately 95%.

摘要翻译： 一种器件包括集成电路和与集成电路的一部分电接触的沉积锡。 沉积的锡通过从浴中电沉积形成。 沉积的锡包括浴的特征残留物。 该浴包括溶于水的锡化合物，强酸和磺基丙基化阴离子表面活性剂。 在另一方面，组合物包括约20至40克/升的亚磺酸甲酯磺酸盐，硫酸亚锡及其混合物之间，约100至200克/升甲磺酸，硫酸和混合物之一 和约1至2克/升一种或多种聚乙二醇烷基-3-磺丙基二醚之间。 另一方面，一种方法包括电镀锡，其电流密度大于约30mA / cm 2，电镀效率大于约95％。

公开(公告)号：US09105628B1

公开(公告)日：2015-08-11

申请号：US13434688

申请日：2012-03-29

申请人： Valery Dubin

发明人： Valery Dubin

IPC分类号： H01L23/498 ,  H01L21/48 ,  H01L21/768 ,  H01L23/538

CPC分类号： H01L23/49827 ,  B81B7/007 ,  B81B2207/096 ,  H01L21/486 ,  H01L21/76831 ,  H01L21/76879 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/5384 ,  H01L2224/02372 ,  H01L2224/05009 ,  H01L2224/05025 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/08146 ,  H01L2224/08165 ,  H01L2224/08235 ,  H01L2224/13 ,  H01L2224/13009 ,  H01L2224/13025 ,  H01L2224/16146 ,  H01L2225/06541 ,  H01L2225/06544 ,  H01L2225/06548 ,  H01L2924/1461 ,  H01L2924/00

摘要： Through substrate via (TSuV) structures and method of making the same are disclosed herein. In embodiments, TSuV structures are metal filled selectively to avoid forming significant metal overburden on non-via surfaces of the substrate. In certain embodiments, post-fill metal removal/planarization operations are eliminated for reduced process complexity and manufacturing cost. In embodiments, selective metal fill entails selective electroless or electrolytic deposition. Both front side and back side selective deposition methods are described along with features of through substrate via structures made with such methods.

摘要翻译： 通过衬底通孔（TSuV）结构及其制备方法在此公开。 在实施例中，TSuV结构被选择性地金属填充以避免在衬底的非通孔表面上形成显着的金属覆盖层。 在某些实施例中，消除后填充金属去除/平面化操作以降低工艺复杂性和制造成本。 在实施例中，选择性金属填充需要选择性化学镀或电解沉积。 还描述了前侧和后侧选择性沉积方法以及通过这种方法制成的通过基底通孔结构的特征。

公开(公告)号：US20140231986A1

公开(公告)日：2014-08-21

申请号：US14260064

申请日：2014-04-23

申请人： Valery Dubin

发明人： Valery Dubin

IPC分类号： B81B7/00 ,  H01L23/498

CPC分类号： H01L23/49827 ,  B81B7/007 ,  B81B2207/096 ,  H01L21/486 ,  H01L21/76831 ,  H01L21/76879 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/5384 ,  H01L2224/02372 ,  H01L2224/05009 ,  H01L2224/05025 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/08146 ,  H01L2224/08165 ,  H01L2224/08235 ,  H01L2224/13 ,  H01L2224/13009 ,  H01L2224/13025 ,  H01L2224/16146 ,  H01L2225/06541 ,  H01L2225/06544 ,  H01L2225/06548 ,  H01L2924/1461 ,  H01L2924/00

摘要： Through substrate via (TSuV) structures and method of making the same are disclosed herein. In embodiments, TSuV structures are metal filled selectively to avoid forming significant metal overburden on non-via surfaces of the substrate. In certain embodiments, post-fill metal removal/planarization operations are eliminated for reduced process complexity and manufacturing cost. In embodiments, selective metal fill entails selective electroless or electrolytic deposition. Both front side and back side selective deposition methods are described along with features of through substrate via structures made with such methods.

摘要翻译： 通过衬底通孔（TSuV）结构及其制备方法在此公开。 在实施例中，TSuV结构被选择性地金属填充以避免在衬底的非通孔表面上形成显着的金属覆盖层。 在某些实施例中，消除后填充金属去除/平面化操作以降低工艺复杂性和制造成本。 在实施例中，选择性金属填充需要选择性化学镀或电解沉积。 还描述了前侧和后侧选择性沉积方法以及通过这种方法制成的通过基底通孔结构的特征。

公开(公告)号：US20070298608A1

公开(公告)日：2007-12-27

申请号：US11897862

申请日：2007-08-31

申请人： Steven Johnston ,  Valery Dubin ,  Michael McSwiney ,  Peter Moon

发明人： Steven Johnston ,  Valery Dubin ,  Michael McSwiney ,  Peter Moon

IPC分类号： H01L21/4763

CPC分类号： H01L21/76843 ,  H01L21/28562 ,  H01L21/288 ,  H01L21/76849 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： Noble metal may be used as a non-oxidizing diffusion barrier to prevent diffusion from copper lines. A diffusion barrier may be formed of a noble metal formed over an adhesion promoting layer or by a noble metal cap over an oxidizable diffusion barrier. The copper lines may also be covered with a noble metal.

公开(公告)号：US20070267297A1

公开(公告)日：2007-11-22

申请号：US11383925

申请日：2006-05-17

申请人： Rohan Akolkar ,  Valery Dubin

发明人： Rohan Akolkar ,  Valery Dubin

IPC分类号： C25D5/02

CPC分类号： C25D3/38 ,  H01L21/2885 ,  H01L21/76879

摘要： A method comprising forming an interconnection opening through a dielectric material to a contact point; and electroplating a interconnection comprising copper in the contact opening using an electroplating bath comprising an alkoxylated sulfopropylated alkylamine. A method comprising forming an interconnection opening through a dielectric material to a contact point; lining the interconnection opening with a barrier layer and a seed layer; and electroplating an interconnection comprising copper in the contact opening using an electroplating bath comprising an alkoxylated sulfopropylated alkylamine.

摘要翻译： 一种方法，包括通过介电材料形成到接触点的互连开口; 以及使用包含烷氧基化磺丙基化烷基胺的电镀浴在接触开口中电镀包含铜的互连。 一种方法，包括通过介电材料形成到接触点的互连开口; 用隔离层和种子层对互连开口进行衬里; 以及使用包含烷氧基化磺丙基化烷基胺的电镀浴在接触开口中电镀包含铜的互连。

公开(公告)号：US20060131750A1

公开(公告)日：2006-06-22

申请号：US11336169

申请日：2006-01-19

申请人： Valery Dubin ,  Peter Moon

发明人： Valery Dubin ,  Peter Moon

IPC分类号： H01L23/52 ,  H01L21/4763

CPC分类号： H01L21/76843 ,  H01L21/2885 ,  H01L21/76873 ,  H01L21/76877 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention includes a method of providing a substrate; sequentially forming a seed layer over the substrate and forming a protection layer over the seed layer; and sequentially removing the protection layer and forming a conductor over the seed layer. The present invention further includes a structure having a substrate, the substrate having a device; an insulator disposed over the substrate, the insulator having an opening, the opening disposed over the device; a barrier layer disposed over the opening; a seed layer disposed over the barrier layer; and a protection layer disposed over the seed layer.

公开(公告)号：US20060063382A1

公开(公告)日：2006-03-23

申请号：US10943610

申请日：2004-09-17

申请人： Valery Dubin ,  Chin-Chang Cheng ,  Shaestagir Chowdhury

发明人： Valery Dubin ,  Chin-Chang Cheng ,  Shaestagir Chowdhury

IPC分类号： H01L21/302

CPC分类号： H01L21/288 ,  C23C18/166 ,  C23C18/1676 ,  C23C18/1827 ,  C23C18/31 ,  H01L21/76849

摘要： A method to form copper-cobalt interconnects comprises rinsing a copper substrate with deionized water, heating a mild etchant solution and rinsing the copper substrate with the heated mild etchant solution, heating an electroless plating solution and rinsing the copper substrate with a portion of the heated electroless plating solution, heating a reducing agent solution and mixing another portion of the heated electroless plating solution with the heated reducing agent solution to form a self-catalytic bath, and applying the self-catalytic bath to the copper substrate. The electroless plating solution may contain cobalt ions. The method may further include rinsing the copper substrate with deionized water and a hydrofluoric acid solution after the application of the self-catalytic bath.

摘要翻译： 形成铜 - 钴互连的方法包括用去离子水漂洗铜基底，加热温和的蚀刻剂溶液并用加热的温和的蚀刻剂溶液冲洗铜基底，加热无电镀溶液并用一部分加热的 化学镀溶液，加热还原剂溶液并将加热的化学镀溶液的另一部分与加热的还原剂溶液混合以形成自催化浴，并将自催化浴施加到铜基底上。 化学镀溶液可以含有钴离子。 该方法可以进一步包括在施加自催化浴后用去离子水和氢氟酸溶液冲洗铜基底。

公开(公告)号：US20050090098A1

公开(公告)日：2005-04-28

申请号：US10695249

申请日：2003-10-27

申请人： Valery Dubin ,  Ramanan Chebiam

发明人： Valery Dubin ,  Ramanan Chebiam

IPC分类号： H01L21/768 ,  H01L23/532 ,  H01L21/44

CPC分类号： H01L21/76843 ,  H01L21/76849 ,  H01L21/76867 ,  H01L21/76886 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method and apparatus for a semiconductor device having a semiconductor device having increased conductive material reliability is described. That method and apparatus comprises forming a conductive path on a substrate. The conductive path made of a first material. A second material is then deposited on the conductive path. Once the second material is deposited on the conductive path, the diffusion of the second material into the conductive path is facilitated. The second material has a predetermined solubility to substantially diffuse to grain boundaries within the first material.

摘要翻译： 描述了具有导电材料可靠性增加的半导体器件的半导体器件的方法和装置。 该方法和装置包括在衬底上形成导电路径。 由第一材料制成的导电路径。 然后将第二材料沉积在导电路径上。 一旦第二材料沉积在导电路径上，则促进了第二材料进入导电路径的扩散。 第二材料具有预定的溶解度以基本上扩散到第一材料内的晶界。