-
公开(公告)号：US20230151480A1
公开(公告)日：2023-05-18
申请号：US18051566
申请日：2022-11-01
Applicant: Tokyo Electron Limited
Inventor： Yoshihiro TAKEZAWA , Tatsuya MIYAHARA , Daisuke SUZUKI
Abstract: A film deposition method includes depositing an amorphous silicon film in a substrate under a process condition. The process condition includes supplying SiH4 gas into a processing chamber in which the substrate is placed. The process condition includes setting a temperature in the processing chamber to be in a range of greater than or equal to 300° C. and less than or equal to 440° C. The process condition includes setting a pressure of the processing chamber to be in a range of greater than or equal to 10 Torr and less than or equal to 100 Torr.
-
公开(公告)号：US20220189785A1
公开(公告)日：2022-06-16
申请号：US17456609
申请日：2021-11-26
Applicant: Tokyo Electron Limited
Inventor： Yutaka MOTOYAMA , Hiroaki IKEGAWA , Satoshi TAKAGI , Daisuke SUZUKI
IPC: H01L21/3205 , H01L21/311 , C23C16/24
Abstract: A method for manufacturing a semiconductor device is provided. In the method, an amorphous silicon film is deposited in a recess provided in a surface of a substrate by supplying a silicon-containing gas to the substrate. The amorphous silicon film is etched by supplying an etching gas to the substrate so as to leave the amorphous silicon film on a bottom of the recess. A silicon film is deposited on the amorphous silicon film by supplying dichlorosilane to the substrate.
-
公开(公告)号：US20170256450A1
公开(公告)日：2017-09-07
申请号：US15450595
申请日：2017-03-06
Applicant: TOKYO ELECTRON LIMITED
Inventor： Yoichiro CHIBA , Daisuke SUZUKI , Atsushi ENDO
IPC: H01L21/768 , C23C16/06 , C23C16/02 , C23C16/44 , C23C16/458 , C23C16/455 , C23C16/04 , C23C16/24 , C23C16/46
CPC classification number: H01L21/76879 , C23C16/0272 , C23C16/045 , C23C16/06 , C23C16/24 , H01L21/76843 , H01L21/76861 , H01L21/76876
Abstract: There is provided a method of filling a recess with a germanium-based film composed of germanium or silicon germanium in a substrate to be processed on which an insulating film having the recess formed therein is formed, the method including: forming a silicon film on a surface of the insulating film at a thickness as not to completely fill the recess; subsequently, etching the silicon film such that the silicon film remains only in a bottom portion of the recess; and subsequently, selectively growing the germanium-based film composed of germanium or silicon germanium on the silicon film remaining in the bottom portion of the recess and selectively filling the recess with the germanium-based film.
-
公开(公告)号：US20170253989A1
公开(公告)日：2017-09-07
申请号：US15450461
申请日：2017-03-06
Applicant: TOKYO ELECTRON LIMITED
Inventor： Yoichiro CHIBA , Daisuke SUZUKI , Kazuhide HASEBE
Abstract: A method of growing a crystal in a recess in a substrate on which an insulating film having the recess is formed, includes: forming a first film on the insulating film at a thickness as not to completely fill the recess; etching the first film by an etching gas to remain the first film only in a bottom portion of the recess; annealing the substrate such that the first film in the bottom portion is modified into a crystalline layer; forming a second film on the insulating film and a surface of the crystalline layer at a thickness as not to completely fill the recess; annealing the substrate such that the second film is crystallized from the bottom portion through a solid phase epitaxial growth to form an epitaxial crystal layer; and etching and removing the second film remaining on the substrate by an etching gas.
-
公开(公告)号：US20150056791A1
公开(公告)日：2015-02-26
申请号：US14464736
申请日：2014-08-21
Applicant: Tokyo Electron Limited
Inventor： Satoshi ONODERA , Daisuke SUZUKI , Akinobu KAKIMOTO
CPC classification number: H01L21/67069 , C23C16/045 , C23C16/24 , C23C16/45589 , C23C16/56 , C30B19/00 , C30B29/06 , H01L21/0243 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/02592 , H01L21/0262 , H01L21/02658
Abstract: A depression filling method for filling a depression of a workpiece including a semiconductor substrate and an insulating film formed on the semiconductor substrate is provided. The depression penetrating the insulating film is configured so as to extend to the semiconductor substrate. The method includes: forming a thin film of a semiconductor material along a wall surface that defines the depression; annealing the workpiece to cause the semiconductor material of the thin film to move toward a bottom of the depression and to form an epitaxial region corresponding to crystals of the semiconductor substrate; and etching the thin film.
Abstract translation: 提供了一种用于填充包括形成在半导体衬底上的半导体衬底和绝缘膜的工件的凹陷的凹陷填充方法。 穿透绝缘膜的凹陷构造成延伸到半导体衬底。 该方法包括：沿着限定凹陷的壁面形成半导体材料薄膜; 对工件进行退火，使薄膜的半导体材料向凹部的底部移动，形成对应于半导体基板的晶体的外延区域; 并蚀刻该薄膜。
-
Patent Agency Ranking
公开(公告)号：US20140251203A1
公开(公告)日：2014-09-11
申请号：US14197359
申请日：2014-03-05
Applicant: TOKYO ELECTRON LIMITED
Inventor： Daisuke SUZUKI , Akinobu KAKIMOTO , Satoshi ONODERA
IPC: C30B25/14
CPC classification number: C30B25/16 , C30B29/06 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02639
Abstract: A selective epitaxial growth method includes preparing a target object including a single crystal substrate in which an epitaxial growth region is partitioned by a suppression film; and growing the epitaxial layer on the epitaxial growth region of the target object until a predetermined film thickness is obtained. The growing the epitaxial layer includes first source gas supply process of supplying a source gas onto the target object under a first pressure to grow a first epitaxial layer on the epitaxial growth region, first removing process of removing deposits on the suppression film, second source gas supply process of supplying the source gas onto the target object under a second pressure higher than the first pressure, and second removing process of removing the deposits on the suppression film. The second source gas supply process and the second removing process are repeated until the predetermined film thickness is obtained.
Abstract translation: 选择性外延生长方法包括制备包括单晶衬底的目标物体，其中外延生长区域被抑制膜分隔; 以及在目标物体的外延生长区上生长外延层，直至获得预定的膜厚。 生长外延层包括在第一压力下将源气体供应到目标物体上的第一源气体供应过程，以在外延生长区上生长第一外延层，首先去除去除抑制膜上的沉积物的第二原料气体 在比第一压力高的第二压力下将源气体供给到目标物体上的供给处理，以及除去抑制膜上的沉积物的第二除去工序。 重复第二源气体供给处理和第二除去处理，直到得到规定的膜厚。
-
公开(公告)号：US20240128081A1
公开(公告)日：2024-04-18
申请号：US18481492
申请日：2023-10-05
Applicant: Tokyo Electron Limited
Inventor： Yoshihiro TAKEZAWA , Toru KANAZAWA , Yosuke WATANABE , Tatsuya MIYAHARA , Yuki TANABE , Daisuke SUZUKI , Masahisa WATANABE , Keisuke SUZUKI , Tuhin Shuvra Basu
CPC classification number: H01L21/02672 , C23C16/24 , H01L21/02532 , H01L21/02592
Abstract: A film forming method includes preparing a substrate having an amorphous silicon film on a surface thereof, diffusing nickel into the amorphous silicon film by supplying a nickel source gas to the amorphous silicon film, and forming a polycrystalline silicon film by heating the amorphous silicon film, and crystallizing the amorphous silicon film by metal-induced lateral crystallization using the nickel diffused in the amorphous silicon film as a nucleus.
-
公开(公告)号：US20220319845A1
公开(公告)日：2022-10-06
申请号：US17654628
申请日：2022-03-14
Applicant: Tokyo Electron Limited
Inventor： Tatsuya MIYAHARA , Yoshihiro TAKEZAWA , Daisuke SUZUKI , Hiroyuki HAYASHI
Abstract: To provide a method of depositing a silicon film that can crystallize the silicon film at low temperature and in a short time, and also can deposit the silicon film with high flatness. A method of depositing a silicon film includes supplying a silicon-containing gas on a seed layer, depositing an amorphous silicon film on the seed layer, supplying chlorosilane gas to the amorphous silicon film, and crystallizing the amorphous silicon film while forming a chlorosilane cap layer on the amorphous silicon film.
-
公开(公告)号：US20220068642A1
公开(公告)日：2022-03-03
申请号：US17411089
申请日：2021-08-25
Applicant: Tokyo Electron Limited
Inventor： Koji KAGAWA , Kenji SEKIGUCHI , Syuhei YONEZAWA , Daisuke SUZUKI , Yoshihiro TAKEZAWA , Yoshihisa MATSUBARA
IPC: H01L21/02 , H01L21/67 , H01L21/324
Abstract: A substrate processing method for crystallizing and expanding a silicon film by a thermal treatment, the method including: a holding process including holding, before executing the thermal treatment, a substrate on which the silicon film is formed; and an adhesion process including supplying, to the substrate that is held in the holding process, a solution containing metal to cause the metal to adhere to a surface of the silicon film with an adhesion amount within a range equal to or more than 1.0E10 [atoms/cm2] and equal to or less than 1.0E20 [atoms/cm2].
-
公开(公告)号：US20200230666A1
公开(公告)日：2020-07-23
申请号：US16744637
申请日：2020-01-16
Applicant: TOKYO ELECTRON LIMITED
Inventor： Yoshihiro TAKEZAWA , Daisuke SUZUKI , Hiroyuki HAYASHI , Sena FUJITA , Tatsuya MIYAHARA , Jyunji ARIGA , Shinya KIKUCHI
Abstract: There is provided a cleaning method of a substrate processing apparatus comprising cleaning an inside of an exhaust pipe through which a gas of an inside of a processing container is exhausted. The cleaning the inside of the exhaust pipe includes: removing a deposit on a downstream side of an opening/closing valve in the exhaust pipe by supplying a first exhaust pipe cleaning gas containing fluorine to the downstream side of the opening/closing valve in the exhaust pipe in a state in which the opening/closing valve provided in a middle of the exhaust pipe is closed; and removing a deposit on an upstream side of the opening/closing valve in the exhaust pipe by supplying a second exhaust pipe cleaning gas not containing fluorine as a gas constituent element to the inside of the processing container in a state in which the opening/closing valve is opened.
-
-
-
-
-
-
-
-
-
Search Results
24
records
(took 0.018 seconds)
