公开(公告)号：US20230042744A1

公开(公告)日：2023-02-09

申请号：US17760120

申请日：2021-02-01

Applicant: Tokyo Electron Limited

Inventor： Masato Hamada ,  Masami Akimoto ,  Masatoshi Shiraishi ,  Satoshi Kaneko ,  Kazuki Motomatsu ,  Kazuyuki Goto

IPC: C25D17/06

Abstract: A plating method includes holding a substrate, supplying a plating liquid L1, supplying a conductive liquid L2 and applying a voltage. In the holding of the substrate, the substrate is held. In the supplying of the plating liquid L1, the plating liquid L1 is supplied onto the held substrate. In the supplying of the conductive liquid L2, the conductive liquid L2, which is different from the plating liquid L1 supplied on the substrate, is supplied onto the plating liquid L1. In the applying of the voltage, the voltage is applied between the substrate and the conductive liquid L2.

公开(公告)号：US10584420B2

公开(公告)日：2020-03-10

申请号：US15633910

申请日：2017-06-27

Applicant: Tokyo Electron Limited

Inventor： Kazuki Motomatsu ,  Satoshi Kaneko ,  Kazunori Sakamoto

IPC: C23C18/16 ,  C23C18/18 ,  C23C18/38 ,  C23C18/42 ,  C23C18/32

Abstract: A substrate liquid processing apparatus 1 includes a substrate holding unit 52 configured to hold a substrate W; a processing liquid supply unit 53 configured to supply a processing liquid L1 onto a top surface of the substrate W held by the substrate holding unit 52; and a cover body 6 configured to cover the substrate W. Here, the cover body 6 includes a ceiling unit 61 disposed above the substrate W, a sidewall unit 62 downwardly extended from the ceiling unit 61, and a heating unit 63 provided at the ceiling unit 61 and configured to heat the processing liquid L1 on the substrate W. The sidewall unit 62 of the cover body 6 is placed at an outer periphery side of the substrate W when the processing liquid L1 on the substrate W is heated.

公开(公告)号：US20190233963A1

公开(公告)日：2019-08-01

申请号：US16330805

申请日：2017-09-07

Applicant: Tokyo Electron Limited

Inventor： Tomohisa Hoshino ,  Masato Hamada ,  Satoshi Kaneko ,  Kiyomitsu Yamaguchi

IPC: C25D5/02 ,  C25D21/12 ,  C25D17/00

CPC classification number: C25D5/022 ,  C25D5/00 ,  C25D7/12 ,  C25D17/007 ,  C25D17/06 ,  C25D17/12 ,  C25D21/04 ,  C25D21/12

Abstract: An electrolytic processing jig configured to perform an electrolytic processing on a processing target substrate by using a processing liquid supplied to the processing target substrate includes a base body having a flat plate shape; and a direct electrode provided on a front surface of the base body and configured to be brought into contact with the processing liquid to apply a voltage between the processing target substrate and the direct electrode. An irregularity pattern is formed on a front surface of the electrolytic processing jig at a processing target substrate side.

公开(公告)号：US20180010252A1

公开(公告)日：2018-01-11

申请号：US15635388

申请日：2017-06-28

Applicant: Tokyo Electron Limited

Inventor： Akira Murata ,  Satoshi Kaneko ,  Kazuki Motomatsu ,  Kazunori Sakamoto

IPC: C23C18/16

Abstract: A substrate processing apparatus can suppress particle generation on a substrate, and can reduce a consumption amount of a processing liquid. A substrate processing apparatus 1 includes a processing chamber 30 having a processing space 31 in which a substrate W is processed; a vaporizing tank 60, configured to store the processing liquid therein, having a vaporization space 61 in which the stored processing liquid is allowed to be vaporized; a decompression driving unit 70 configured to decompress the vaporization space 61; and a control unit 18. The control unit 18 vaporizes the processing liquid into the processing gas by decompressing the vaporization space 61 without through the processing space 31, and then, vaporizes the processing liquid into the processing gas by decompressing the vaporization space 61 through the processing space 31, and supplies an inert gas into the vaporization space 61.

公开(公告)号：US09822453B2

公开(公告)日：2017-11-21

申请号：US14560332

申请日：2014-12-04

Applicant: Tokyo Electron Limited

Inventor： Satoshi Kaneko ,  Kazuki Motomatsu ,  Kazunori Sakamoto

IPC: H01L21/30 ,  H01L21/68 ,  C25D21/12 ,  C23C18/16 ,  H01L21/306

CPC classification number: C23C18/1675 ,  C23C18/1619 ,  C23C18/1664 ,  C25D21/12 ,  H01L21/306 ,  H01L21/68

Abstract: A substrate entire region treatment process of discharging a processing fluid of a temperature different from a surface temperature of a substrate 3 from a first nozzle 24 toward the substrate is performed while moving the first nozzle toward an outer side from an entire region treatment start position P2 located at a central portion to an entire region treatment end position P5 located at a peripheral portion. Then, after moving the first nozzle toward an inner side to a peripheral region treatment start position P6 located at an outer position than the entire region treatment start position P2, a substrate peripheral region treatment process of discharging the processing fluid from the first nozzle toward the substrate is performed while moving the first nozzle toward the outer side from the peripheral region treatment start position P6 to a peripheral region treatment stop position P7 located at a peripheral portion.

公开(公告)号：US09675992B2

公开(公告)日：2017-06-13

申请号：US14570266

申请日：2014-12-15

Applicant: Tokyo Electron Limited

Inventor： Yoshihiro Kawaguchi ,  Satoshi Kaneko

IPC: B05C11/10 ,  B05C3/02 ,  B05C3/00 ,  C23C18/16

CPC classification number: B05C11/1002 ,  B05C3/005 ,  B05C3/02 ,  C23C18/1619 ,  C23C18/1632 ,  C23C18/1669 ,  C23C18/1675 ,  C23C18/168 ,  Y10T137/0318 ,  Y10T137/0329

Abstract: A substrate processing apparatus includes one or more substrate processing units 11 to 18 each processing a substrate 3 with a processing fluid; processing fluid supply units 19 and 20 supplying the heated processing fluid to the substrate processing units 11 to 18; and a controller 21 controlling the processing fluid supply units 19 and 20. The processing fluid supply units 19 and 20 include a storage tank 35 storing the processing fluid; a heating heat exchanger 51 heating the processing fluid; and a supply path 52 supplying the processing fluid to the substrate processing units 11 to 18. The supply path 52 includes a bypass path 71 bypassing the heating heat exchanger 51 at an upstream of the substrate processing units 11 to 18. The processing fluid heated by the heating heat exchanger 51 and the processing fluid supplied from the bypass path 71 are mixed to be supplied.

公开(公告)号：US20160375462A1

公开(公告)日：2016-12-29

申请号：US15187965

申请日：2016-06-21

Applicant: Tokyo Electron Limited

Inventor： Satoshi Kaneko

IPC: B05D1/02 ,  B05B13/02

CPC classification number: B05D1/005 ,  H01L21/6715

Abstract: A scratch on a substrate held by a wafer holding unit or adhesion of an impurity to the substrate can be suppressed. A substrate processing apparatus 1 includes a wafer holding unit 22 configured to be rotated and a nozzle 50 configured to supply a coating liquid 50a. The wafer holding unit 22 includes a holding surface 23 and an opening 24. The coating liquid 50a is supplied onto a peripheral portion of the holding surface 23 from the nozzle 50, and then, the coating liquid is dried, so that an annular coating film 25, on which a wafer W is placed, is formed on the holding surface 23.

Abstract translation: 可以抑制由晶片保持单元保持的基板上的划痕或者杂质与基板的粘附。 基板处理装置1包括被配置为旋转的晶片保持单元22和构造成供给涂布液体50a的喷嘴50。 晶片保持单元22包括保持表面23和开口24.涂布液50a从喷嘴50供给到保持表面23的周边部分，然后将涂布液干燥，使得环状涂膜 如图25所示，在其上放置有晶片W，形成在保持表面23上。

公开(公告)号：US20150159276A1

公开(公告)日：2015-06-11

申请号：US14560332

申请日：2014-12-04

Applicant: Tokyo Electron Limited

Inventor： Satoshi Kaneko ,  Kazuki Motomatsu ,  Kazunori Sakamoto

IPC: C23C18/16

CPC classification number: C23C18/1675 ,  C23C18/1619 ,  C23C18/1664 ,  C25D21/12 ,  H01L21/306 ,  H01L21/68

Abstract: A substrate entire region treatment process of discharging a processing fluid of a temperature different from a surface temperature of a substrate 3 from a first nozzle 24 toward the substrate is performed while moving the first nozzle toward an outer side from an entire region treatment start position P2 located at a central portion to an entire region treatment end position P5 located at a peripheral portion. Then, after moving the first nozzle toward an inner side to a peripheral region treatment start position P6 located at an outer position than the entire region treatment start position P2, a substrate peripheral region treatment process of discharging the processing fluid from the first nozzle toward the substrate is performed while moving the first nozzle toward the outer side from the peripheral region treatment start position P6 to a peripheral region treatment stop position P7 located at a peripheral portion.

Abstract translation: 在将第一喷嘴从整个区域处理开始位置P2向外侧移动的同时，进行将与基板3的表面温度不同的温度的处理流体从第一喷嘴24朝向基板排出的基板整体区域处理工序 位于位于周边部分的整个区域处理结束位置P5的中心部分。 然后，在将第一喷嘴向内侧移动到位于比区域整体开始位置P2的外侧位置的周边区域处理开始位置P6的情况下，将处理流体从第一喷嘴朝向 在将第一喷嘴从周边区域处理开始位置P6向外侧移动到位于周边部的周边区域处理停止位置P7的同时执行基板。

公开(公告)号：US11427920B2

公开(公告)日：2022-08-30

申请号：US16330805

申请日：2017-09-07

Applicant: Tokyo Electron Limited

Inventor： Tomohisa Hoshino ,  Masato Hamada ,  Satoshi Kaneko ,  Kiyomitsu Yamaguchi

IPC: C25D5/00 ,  C25D5/02 ,  C25D17/00 ,  C25D7/12 ,  C25D5/04 ,  C25D17/12 ,  C25D17/06 ,  C25D21/12 ,  C25D15/02 ,  C25D5/08 ,  C25D21/04

Abstract: An electrolytic processing jig configured to perform an electrolytic processing on a processing target substrate by using a processing liquid supplied to the processing target substrate includes a base body having a flat plate shape; and a direct electrode provided on a front surface of the base body and configured to be brought into contact with the processing liquid to apply a voltage between the processing target substrate and the direct electrode. An irregularity pattern is formed on a front surface of the electrolytic processing jig at a processing target substrate side.

公开(公告)号：US20220154342A1

公开(公告)日：2022-05-19

申请号：US17598597

申请日：2020-03-24

Applicant: Tokyo Electron Limited

Inventor： Katsuhiro Morikawa ,  Masami Akimoto ,  Mitsuaki Iwashita ,  Satoshi Kaneko

IPC: C23C18/16 ,  H01L21/288 ,  H01L21/02 ,  H01L21/67 ,  H01L21/677 ,  C23C18/18

Abstract: A substrate processing apparatus includes a liquid processing module, provided with a carry-out/in opening of a substrate, including therein a first liquid processing device and a second liquid processing device; a module-outside transfer device configured to carry the substrate out from and into the liquid processing module; and a module-inside transfer device configured to transfer the substrate between the first liquid processing device and the second liquid processing device. The first liquid processing device is equipped with a first holder configured to hold the substrate. The second liquid processing device is equipped with a second holder configured to hold the substrate. The second liquid processing device is configured to perform a plating processing on the substrate held by the second holder. The first liquid processing device is configured to perform at least a post-cleaning processing performed after the plating processing on the substrate held by the first holder.