Manufacturing method of semiconductor device with element isolation region formed within
    11.
    发明授权
    Manufacturing method of semiconductor device with element isolation region formed within 有权
    在其内形成元件隔离区的半导体器件的制造方法

    公开(公告)号:US08513072B2

    公开(公告)日:2013-08-20

    申请号:US12968656

    申请日:2010-12-15

    IPC分类号: H01L21/336

    摘要: In order to form a plurality of semiconductor elements over an insulating surface, in one continuous semiconductor layer, an element region serving as a semiconductor element and an element isolation region having a function to electrically isolate element regions from each other by repetition of PN junctions. The element isolation region is formed by selective addition of an impurity element of at least one or more kinds of oxygen, nitrogen, and carbon and an impurity element that imparts an opposite conductivity type to that of the adjacent element region in order to electrically isolate elements from each other in one continuous semiconductor layer.

    摘要翻译: 为了在绝缘表面上形成多个半导体元件,在一个连续半导体层中,用作半导体元件的元件区域和具有通过重复PN结将元件区域彼此电隔离的功能的元件隔离区域。 通过选择性地添加至少一种或多种氧,氮和碳的杂质元素和赋予与相邻元件区相反的导电类型的杂质元素来形成元件隔离区域,以便电隔离元件 在一个连续的半导体层中彼此相交。

    Method of manufacturing a semiconductor device
    13.
    发明授权
    Method of manufacturing a semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号:US08497509B2

    公开(公告)日:2013-07-30

    申请号:US12173929

    申请日:2008-07-16

    IPC分类号: H01L29/00 H01L29/786

    摘要: A method of manufacturing a semiconductor device, comprises the steps of: forming a first insulating film on a first substrate; forming a second insulating film on the first insulating film; forming an amorphous silicon film on the second insulating film; holding a metal element that promotes the crystallization of silicon in contact with a surface of the amorphous silicon film; crystallizing the amorphous silicon film through a heat treatment to obtain a crystalline silicon film; forming a thin-film transistor using the crystalline silicon film; forming a sealing layer that seals the thin-film transistor; bonding a second substrate having a translucent property to the sealing layer; and removing the first insulating film to peel off the first substrate.

    摘要翻译: 一种制造半导体器件的方法,包括以下步骤:在第一衬底上形成第一绝缘膜; 在所述第一绝缘膜上形成第二绝缘膜; 在所述第二绝缘膜上形成非晶硅膜; 保持促进与非晶硅膜的表面接触的硅的结晶的金属元素; 通过热处理使非晶硅膜结晶,得到结晶硅膜; 使用所述晶体硅膜形成薄膜晶体管; 形成密封所述薄膜晶体管的密封层; 将具有半透明性质的第二基板结合到所述密封层; 以及去除所述第一绝缘膜以剥离所述第一基板。

    Wireless chip and electronic appliance having the same
    14.
    发明授权
    Wireless chip and electronic appliance having the same 有权
    无线芯片和电器具有相同的功能

    公开(公告)号:US08455954B2

    公开(公告)日:2013-06-04

    申请号:US13445262

    申请日:2012-04-12

    IPC分类号: H01L27/11

    摘要: The present invention provides a wireless chip having high mechanical strength. Moreover, the present invention also provides a wireless chip which can prevent an electric wave from being blocked. In a wireless chip of the present invention, a layer having a thin film transistor formed over an insulating substrate is fixed to an antenna by an anisotropic conductive adhesive, and the thin film transistor is connected to the antenna. The antenna has a dielectric layer, a first conductive layer, and a second conductive layer; the first conductive layer and the second conductive layer has the dielectric layer therebetween; the first conductive layer serves as a radiating electrode; and the second electrode serves as a ground contact body.

    摘要翻译: 本发明提供一种机械强度高的无线芯片。 此外,本发明还提供一种能够防止电波被阻挡的无线芯片。 在本发明的无线芯片中,通过各向异性导电粘合剂将具有形成在绝缘基板上的薄膜晶体管的层固定到天线,并且薄膜晶体管连接到天线。 天线具有电介质层,第一导电层和第二导电层; 第一导电层和第二导电层之间具有介电层; 第一导电层用作辐射电极; 第二电极用作接地体。

    Method of manufacturing a light emitting device
    15.
    发明授权
    Method of manufacturing a light emitting device 有权
    制造发光器件的方法

    公开(公告)号:US08425016B2

    公开(公告)日:2013-04-23

    申请号:US13477096

    申请日:2012-05-22

    IPC分类号: B41J2/17

    摘要: A printing apparatus including an ink head having a pathway in which an ink in a liquid state is capable of flowing, the pathway being provided in the ink head and having a first end point and a second end point; a discharge port for discharging the ink, the discharge port being provided at the first end point; and a needle valve provided in the pathway and over the discharge port so that an outer surface of a needle portion of the needle valve is configured to be in contact with the ink.

    摘要翻译: 一种打印装置,包括具有液体状态的墨水能够流动的路径的墨头,该墨水通道设置在墨水头中并具有第一端点和第二端点; 用于排出墨的排出口,排出口设置在第一端点处; 以及设置在所述通路中并在所述排出口上方的针阀,使得所述针阀的针部的外表面与所述墨接触。

    Photovoltaic device and method for manufacturing the same
    16.
    发明授权
    Photovoltaic device and method for manufacturing the same 有权
    光伏器件及其制造方法

    公开(公告)号:US08415231B2

    公开(公告)日:2013-04-09

    申请号:US13213636

    申请日:2011-08-19

    IPC分类号: H01L21/30 H01L21/46

    摘要: A photovoltaic device uses a single crystal or polycrystalline semiconductor layer which is separated from a single crystal or polycrystalline semiconductor substrate as a photoelectric conversion layer and has a SOI structure in which the semiconductor layer is bonded to a substrate having an insulating surface or an insulating substrate. A single crystal semiconductor layer which is a separated surface layer part of a single crystal semiconductor substrate and is transferred is used as a photoelectric conversion layer and includes an impurity semiconductor layer to which hydrogen or halogen is added on a light incidence surface or on an opposite surface. The semiconductor layer is fixed to a substrate having an insulating surface or an insulating substrate.

    摘要翻译: 光电器件使用与单晶或多晶半导体衬底分离的单晶或多晶半导体层作为光电转换层,并具有其中半导体层与具有绝缘表面的衬底或绝缘衬底接合的SOI结构 。 作为单晶半导体基板的分离表面层部分并被转印的单晶半导体层被用作光电转换层,并且包括在光入射表面上或在相对的位置上添加氢或卤素的杂质半导体层 表面。 半导体层被固定到具有绝缘表面的基板或绝缘基板。

    Semiconductor device and manufacturing method of the same
    18.
    发明授权
    Semiconductor device and manufacturing method of the same 有权
    半导体器件及其制造方法相同

    公开(公告)号:US08368083B2

    公开(公告)日:2013-02-05

    申请号:US12700756

    申请日:2010-02-05

    IPC分类号: H01L31/0312

    摘要: At least part of a semiconductor layer or a semiconductor substrate includes a semiconductor region having a large energy gap. The semiconductor region having a large energy gap is preferably formed from silicon carbide and is provided in a position at least overlapping with a gate electrode provided with an insulating layer between the semiconductor region and the gate electrode. By making a structure in which the semiconductor region is included in a channel formation region, a dielectric breakdown voltage is improved.

    摘要翻译: 半导体层或半导体衬底的至少一部分包括具有大能隙的半导体区域。 具有大能隙的半导体区域优选由碳化硅形成,并且设置在与半导体区域和栅电极之间设置有绝缘层的栅电极至少重叠的位置。 通过形成半导体区域包括在沟道形成区域中的结构,提高了介电击穿电压。

    Liquid droplet ejection system and control program of ejection condition of compositions
    19.
    发明授权
    Liquid droplet ejection system and control program of ejection condition of compositions 有权
    液滴喷射系统和组合物喷射条件控制程序

    公开(公告)号:US08322847B2

    公开(公告)日:2012-12-04

    申请号:US13049078

    申请日:2011-03-16

    IPC分类号: B41J2/01 B05B7/06 H01L21/36

    摘要: When using a liquid droplet ejection method, a conventional photomask is not required, however, it is required instead that a moving path of a nozzle or a substrate is controlled with accuracy at least in ejecting liquid droplets. According to the characteristics of compositions to be ejected or their pattern, such ejection conditions are desirably set as the moving rate of a nozzle or a substrate, ejection quantity, ejection distance and ejection rate of compositions, atmosphere of the space that the compositions are ejected, the temperature and moisture of the space, and heating temperature of the substrate. A liquid droplet ejection system in accordance with the invention comprises an input means for inputting data of a thin film pattern, a set means for setting a nozzle for a ejecting a composition containing a material for forming the thin film or setting a moving path of the substrate to which the composition is ejected, an image pick-up means for detecting an alignment marker formed on a substrate and a control means for controlling the moving path of the nozzle or the substrate.

    摘要翻译: 当使用液滴喷射方法时,不需要常规的光掩模,然而,需要至少在喷射液滴时精确地控制喷嘴或基板的移动路径。 根据要喷射的组合物或其图案的特征,这种喷射条件期望设置为喷嘴或基底的移动速率,喷射量,喷射距离和组合物的喷射速率,组合物喷出的空间的气氛 ,空间的温度和湿度,以及基板的加热温度。 根据本发明的液滴喷射系统包括用于输入薄膜图案的数据的输入装置,用于设置用于喷射包含用于形成薄膜的材料的组合物的喷嘴的设定装置或设置该薄膜图案的移动路径 用于检测形成在基板上的取向标记的图像拾取装置和用于控制喷嘴或基板的移动路径的控制装置。

    Liquid crystal display device, electronic device having the same, and manufacturing method of the same
    20.
    发明授权
    Liquid crystal display device, electronic device having the same, and manufacturing method of the same 有权
    液晶显示装置,具有该液晶显示装置的电子装置及其制造方法

    公开(公告)号:US08305509B2

    公开(公告)日:2012-11-06

    申请号:US12908243

    申请日:2010-10-20

    IPC分类号: G02F1/136 G02F1/1345

    摘要: A liquid crystal display device with improved productivity and a manufacturing method of the same. A liquid crystal display device according to the invention comprises in a region in which a scan line and a data line intersect with each other a first substrate comprising a first thin film transistor using either an amorphous semiconductor or an organic semiconductor for a channel portion, a second substrate, a liquid crystal layer interposed between the first substrate and the second substrate, and a third substrate comprising a second thin film transistor using a crystalline semiconductor for a channel portion. In the liquid crystal display device of the invention, a crystal grain boundary in the crystalline semiconductor extends along the flow of electrons or holes in the second thin film transistor, the first substrate is attached to the second substrate so that the first substrate is exposed, a first region for forming the second thin film transistor and a second region for forming an input terminal and an output terminal are formed on the third substrate, and the short side length of the third substrate is 1 to 6 mm and the short side length of the first region is 0.5 to 1 mm.

    摘要翻译: 一种提高生产率的液晶显示装置及其制造方法。 根据本发明的液晶显示装置包括在扫描线和数据线彼此相交的区域中,第一基板包括使用非晶半导体或用于沟道部分的有机半导体的第一薄膜晶体管, 第二基板,介于第一基板和第二基板之间的液晶层,以及包括使用晶体半导体用于沟道部分的第二薄膜晶体管的第三基板。 在本发明的液晶显示装置中,晶体半导体中的晶体晶界沿着第二薄膜晶体管中的电子或空穴的流动延伸,第一基板被附着到第二基板,使得第一基板被暴露, 形成第二薄膜晶体管的第一区域和用于形成输入端子的第二区域和输出端子形成在第三基板上,并且第三基板的短边长度为1〜6mm,短边长度为 第一区域为0.5至1mm。