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    Lateral field excitation of bulk acoustic waves from an IC-compliant low voltage source
    12.
    发明授权
    Lateral field excitation of bulk acoustic waves from an IC-compliant low voltage source 失效
    来自符合IC标准的低压源的体声波的侧向场激发

    公开(公告)号：US07053523B1

    公开(公告)日：2006-05-30

    申请号：US10774645

    申请日：2004-02-02

    申请人： Arthur Ballato ,  Richard H. Wittstruck ,  Xiaojun Tong ,  Yicheng Lu

    发明人： Arthur Ballato ,  Richard H. Wittstruck ,  Xiaojun Tong ,  Yicheng Lu

    IPC分类号： H03H9/145 ,  H03H9/25

    CPC分类号： H03H9/02228 ,  H03H9/02086 ,  H03H9/17

    摘要： An Interdigital Bulk Acoustic-Wave Transducer (IBAT) device is provided with pairs of exciting electrode fingers disposed sufficiently close together on the piezoelectric substrate and dielectric coating over the exciting electrode fingers to generate an IC-compatible voltage at relatively high electric field strength, resulting in a reduced region of excitation and uniform electric field strength distribution. The IBAT advantageously produces a lateral electric field substantially uniform over a substantial portion of the active BAW structure area, reducing, or virtually eliminating sharp voltage spikes, an electrical field produced by the low voltages resident on integrated circuit (IC) chips, usually of a magnitude of 10 volts, or lower, the planar electrode structure being compatible with IC processing techniques, such as photolithography and the BAWs produced thereby being essentially plane waves, with propagation away from, but with phase progression substantially parallel to, the substrate surface. Numerous IBAT structural arrangements are possible by advantageously over-coating the IBAT electrode finger stripes with an insulating dielectric in different configurations, and any possible configuration achieved through over-coating is considered to be within the contemplation of the devices and methods of the present invention. Interdigital bulk acoustic wave transducers and methods for exciting bulk acoustic waves with interdigital electrode fingers are also provided.

    摘要翻译： 交叉散音声波传感器（IBAT）装置设置有一对在压电基片上充分靠近的激励电极指状物和在激发电极指上的电介质涂层，以在较高的电场强度下产生IC兼容的电压，从而产生 在激励和均匀电场强度分布的减少区域。 IBAT有利地产生在主动BAW结构区域的大部分上基本上均匀的横向电场，减少或实际上消除了尖锐的电压尖峰，这是由驻留在集成电路（IC）芯片上的低电压产生的电场，通常为 10伏特或更低的平面电极结构与IC处理技术（例如光刻法）兼容，并且由此产生的BAW基本上是平面波，其传播远离基本表面但基本平行于相位进展。 可以通过有利地用不同结构的绝缘电介质覆盖IBAT电极指状条来实现许多IBAT结构布置，并且通过过涂覆实现的任何可能的构造被认为在本发明的装置和方法的考虑之内。 还提供叉指体积声波换能器和用于激发具有叉指电极指的体声波的方法。

    Tailoring piezoelectric properties using MgxZn1-xO/ZnO material and MgxZn1-xO/ZnO structures
    17.
    发明授权
    Tailoring piezoelectric properties using MgxZn1-xO/ZnO material and MgxZn1-xO/ZnO structures 失效
    使用MgxZn1-xO / ZnO材料和MgxZn1-xO / ZnO结构调整压电性能

    公开(公告)号：US06716479B2

    公开(公告)日：2004-04-06

    申请号：US10266130

    申请日：2002-10-07

    申请人： Yicheng Lu ,  Nuri William Emanetoglu

    发明人： Yicheng Lu ,  Nuri William Emanetoglu

    IPC分类号： B05D512

    CPC分类号： C30B29/22 ,  C23C16/40 ,  C30B25/02 ,  C30B29/16 ,  H01L41/187

    摘要： The present invention provides magnesium zinc oxide (MgxZn1-xO) as a new piezoelectric material, which is formed by alloying ZnO and MgO. MgxZn1-xO allows for flexibility in thin film SAW and BAW device design, as its piezoelectric properties can be tailored by controlling the Mg content, as well as by using MgxZn1-xO/ZnO multilayer structures. To experimentally prove it, the MgxZn1-xO (x≦0.35) thin films are grown on r-plane sapphire substrates at a temperature in the range of 400° C.-500° C. by metalorganic chemical vapor deposition. MgxZn1-xO films with Mg mole percent up to 0.35 have epitaxial quality and wurtzite crystal structure. The SAW properties, including velocity dispersion and piezoelectric coupling, are characterized and concluded that the acoustic velocity increases, whereas the piezoelectric coupling decreases with increasing Mg mole percent in piezoelectric MgxZn1-xO films.

    摘要翻译： 本发明提供了通过使ZnO和MgO合金形成的作为新的压电材料的氧化镁锌（Mg x Zn 1-x O）。 MgxZn1-xO允许薄膜SAW和BAW器件设计的灵活性，因为其压电性能可以通过控制Mg含量以及通过使用MgxZn1-xO / ZnO多层结构来定制。 为了进行实验证明，通过金属有机化学气相沉积，MgXZn1-xO（x <= 0.35）薄膜通过在450℃-500℃范围内的温度在r面蓝宝石衬底上生长。 Mg摩尔％至0.35的MgxZn1-xO薄膜具有外延质量和纤锌矿晶体结构。 SAW特性，包括速度色散和压电耦合，其特征和结论是声速增加，而压电耦合随压电MgxZn1-xO薄膜中Mg摩尔百分数的增加而减小。

    METHOD AND APPARATUS FOR MAKING AND DETECTING A DOCUMENT VERIFICATION INDICATOR USING OPTICAL PATTERN ENCRYPTION
    19.
    发明申请
    METHOD AND APPARATUS FOR MAKING AND DETECTING A DOCUMENT VERIFICATION INDICATOR USING OPTICAL PATTERN ENCRYPTION 审中-公开
    使用光学图案加密制作和检测文档验证指示符的方法和装置

    公开(公告)号：US20100266164A1

    公开(公告)日：2010-10-21

    申请号：US12764028

    申请日：2010-04-20

    申请人： Kristin Dana ,  Gabriela Livescu ,  Yicheng Lu

    发明人： Kristin Dana ,  Gabriela Livescu ,  Yicheng Lu

    IPC分类号： G06K9/00

    CPC分类号： G07D7/121 ,  G07D7/20

    摘要： A method and apparatus for creating and detecting an optically encoded document having a uniquely designed document verification indicator is disclosed. One embodiment includes applying a spatially varying Brewster angle pattern on a substrate. Another embodiment includes an apparatus for detecting the spatially varying Brewster angle pattern including a light source, a slit aperture, a polarizer, at least one parabolic mirror, and an image capturing device.

    摘要翻译： 公开了一种用于创建和检测具有独特设计的文档验证指示符的光学编码文档的方法和装置。 一个实施例包括在基底上施加空间变化的布鲁斯特角图案。 另一个实施例包括用于检测包括光源，狭缝孔径，偏振器，至少一个抛物面反射镜和图像捕获装置的空间变化布鲁斯特角图案的装置。