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    Zinc oxide nanotip and fabricating method thereof
    4.
    发明申请
    Zinc oxide nanotip and fabricating method thereof 审中-公开
    氧化锌纳米尖端及其制造方法

    公开(公告)号：US20070151508A1

    公开(公告)日：2007-07-05

    申请号：US11311092

    申请日：2005-12-19

    申请人： Yicheng Lu ,  Sriram Muthukumar ,  Nuri Emanetoglu

    发明人： Yicheng Lu ,  Sriram Muthukumar ,  Nuri Emanetoglu

    IPC分类号： C30B25/00 ,  C23C16/00 ,  C30B23/00 ,  C30B28/12

    CPC分类号： B82Y30/00 ,  B82Y15/00 ,  C30B25/02 ,  C30B29/16 ,  C30B29/60 ,  H01J1/3044 ,  H01J9/025 ,  H01J2201/30446 ,  Y10S977/811 ,  Y10T428/24802 ,  Y10T428/24917

    摘要： In the present invention, there are provided self-assembled ZnO nanotips grown on relatively low temperatures on various substrates by metalorganic chemical vapor deposition (MOCVD). The ZnO nanotips are made at relatively low temperatures, giving ZnO a unique advantage over other wide bandgap semiconductors such as GaN and SiC. The nanotips have controlled uniform size, distribution and orientation. These ZnO nanotips are of single crystal quality, show n-type conductivity and have good optical properties. Selective growth of ZnO nanotips also has been realized on patterned (100) silicon on r-sapphire (SOS), and amorphous SiO2 on r-sapphire substrates. Self-assembled ZnO nanotips can also be selectively grown on patterned layers or islands made of a semiconductor, an insulator or a metal deposited on R-plane (01 12) Al2O3 substrates as long as the ZnO grows in a columnar structure along the c-axis [0001] of ZnO on these materials. Such self-assembled ZnO nanotips and nanotip arrays are promising for applications in field emission displays and electron emission sources, photonic bandgap devices, near-field microscopy, UV optoelectronics, and bio-chemical sensors.

    摘要翻译： 在本发明中，提供了通过金属有机化学气相沉积（MOCVD）在各种基底上在较低温度下生长的自组装的ZnO纳米二极管。 ZnO纳米芯片在相对低的温度下制成，使ZnO比其他宽带隙半导体（如GaN和SiC）具有独特的优势。 纳米片具有均匀的尺寸，分布和取向。 这些ZnO纳米芯片具有单晶质量，显示n型导电性，并具有良好的光学性能。 ZnO纳米片的选择性生长也已经在r-蓝宝石（SOS）上的图案化（100）硅和r-蓝宝石衬底上的无定形SiO 2上实现。 自组装ZnO纳米技术也可以选择性地生长在由半导体，绝缘体或沉积在R平面上的金属（01 12）Al 2 / 只要ZnO沿着这些材料上的ZnO的c轴[0001]以柱状结构生长，就可以进行。 这种自组装的ZnO纳米片和纳米尖端阵列对于场发射显示器和电子发射源，光子带隙器件，近场显微镜，UV光电子学和生物化学传感器的应用是有希望的。

    Lateral field excitation of bulk acoustic waves from an IC-compliant low voltage source
    5.
    发明授权
    Lateral field excitation of bulk acoustic waves from an IC-compliant low voltage source 失效
    来自符合IC标准的低压源的体声波的侧向场激发

    公开(公告)号：US07053523B1

    公开(公告)日：2006-05-30

    申请号：US10774645

    申请日：2004-02-02

    申请人： Arthur Ballato ,  Richard H. Wittstruck ,  Xiaojun Tong ,  Yicheng Lu

    发明人： Arthur Ballato ,  Richard H. Wittstruck ,  Xiaojun Tong ,  Yicheng Lu

    IPC分类号： H03H9/145 ,  H03H9/25

    CPC分类号： H03H9/02228 ,  H03H9/02086 ,  H03H9/17

    摘要： An Interdigital Bulk Acoustic-Wave Transducer (IBAT) device is provided with pairs of exciting electrode fingers disposed sufficiently close together on the piezoelectric substrate and dielectric coating over the exciting electrode fingers to generate an IC-compatible voltage at relatively high electric field strength, resulting in a reduced region of excitation and uniform electric field strength distribution. The IBAT advantageously produces a lateral electric field substantially uniform over a substantial portion of the active BAW structure area, reducing, or virtually eliminating sharp voltage spikes, an electrical field produced by the low voltages resident on integrated circuit (IC) chips, usually of a magnitude of 10 volts, or lower, the planar electrode structure being compatible with IC processing techniques, such as photolithography and the BAWs produced thereby being essentially plane waves, with propagation away from, but with phase progression substantially parallel to, the substrate surface. Numerous IBAT structural arrangements are possible by advantageously over-coating the IBAT electrode finger stripes with an insulating dielectric in different configurations, and any possible configuration achieved through over-coating is considered to be within the contemplation of the devices and methods of the present invention. Interdigital bulk acoustic wave transducers and methods for exciting bulk acoustic waves with interdigital electrode fingers are also provided.

    摘要翻译： 交叉散音声波传感器（IBAT）装置设置有一对在压电基片上充分靠近的激励电极指状物和在激发电极指上的电介质涂层，以在较高的电场强度下产生IC兼容的电压，从而产生 在激励和均匀电场强度分布的减少区域。 IBAT有利地产生在主动BAW结构区域的大部分上基本上均匀的横向电场，减少或实际上消除了尖锐的电压尖峰，这是由驻留在集成电路（IC）芯片上的低电压产生的电场，通常为 10伏特或更低的平面电极结构与IC处理技术（例如光刻法）兼容，并且由此产生的BAW基本上是平面波，其传播远离基本表面但基本平行于相位进展。 可以通过有利地用不同结构的绝缘电介质覆盖IBAT电极指状条来实现许多IBAT结构布置，并且通过过涂覆实现的任何可能的构造被认为在本发明的装置和方法的考虑之内。 还提供叉指体积声波换能器和用于激发具有叉指电极指的体声波的方法。

    High contrast, ultrafast optically-addressed ultraviolet light modulator based upon optical anisotropy
    6.
    发明授权
    High contrast, ultrafast optically-addressed ultraviolet light modulator based upon optical anisotropy 失效
    基于光学各向异性的高对比度，超快光学寻址紫外光调制器

    公开(公告)号：US06366389B1

    公开(公告)日：2002-04-02

    申请号：US09638156

    申请日：2000-08-15

    申请人： Michael Wraback ,  Paul H. Shen ,  Shaohua Liang ,  Chandrasekhar R. Gorla ,  Yicheng Lu

    发明人： Michael Wraback ,  Paul H. Shen ,  Shaohua Liang ,  Chandrasekhar R. Gorla ,  Yicheng Lu

    IPC分类号： G02F107

    CPC分类号： B82Y20/00 ,  G02F1/0126 ,  G02F1/3515 ,  G02F1/3523 ,  G02F1/3556

    摘要： A high contrast ultrahigh speed optically-addressed ultraviolet light modulator exploits the optical anisotropy in a ZnO film epitaxially grown on (01 {overscore (1)}2) sapphire. This device, which could also be realized in a ZnO bulk crystal or similar wide bandgap material, achieves both high contrast and high speed by exploiting the anisotropic bleaching of the anisotropic absorption and concomitant ultrafast polarization rotation near the lowest exciton resonances produced by femtosecond ultraviolet pulses. The resultant modulation in a preferred embodiment is characterized by a contrast ratio of 70:1, corresponding to a dynamic polarization rotation of 12°, and decays to a quasi-equilibrium value within 100 ps.

    摘要翻译： 高对比度超高速光学寻址紫外光调制器利用在（01 {overscore（1）} 2）蓝宝石外延生长的ZnO膜中的光学各向异性。 该器件也可以在ZnO体晶或类似的宽带隙材料中实现，通过利用由飞秒紫外脉冲产生的最低激子谐振附近的各向异性吸收和伴随的超快速偏振旋转的各向异性漂白，实现高对比度和高速度 。 在优选实施例中的结果调制的特征在于对应于12°的动态极化旋转的70:1的对比度，并且在100ps内衰减到准平衡值。

    MULTIFUNCTIONAL BIOSENSOR BASED ON ZNO NANOSTRUCTURES
    10.
    发明申请
    MULTIFUNCTIONAL BIOSENSOR BASED ON ZNO NANOSTRUCTURES 有权
    基于ZNO纳米结构的多功能生物传感器

    公开(公告)号：US20050116263A1

    公开(公告)日：2005-06-02

    申请号：US10456050

    申请日：2003-06-06

    申请人： Yicheng Lu ,  Zheng Zhang ,  Nuri Emanetoglu ,  Masayori Inouye ,  Oleg Mirochnitchenko

    发明人： Yicheng Lu ,  Zheng Zhang ,  Nuri Emanetoglu ,  Masayori Inouye ,  Oleg Mirochnitchenko

    IPC分类号： C12Q1/68 ,  G01N21/64 ,  G01N27/00 ,  G01N27/12 ,  G01N27/414 ,  G01N29/02 ,  G01N33/543 ,  H01L29/84

    CPC分类号： G01N21/6428 ,  C12Q1/6825 ,  C12Q1/6837 ,  G01N27/4145 ,  G01N27/4146 ,  G01N29/022 ,  G01N33/54373 ,  G01N33/5438 ,  G01N2021/6432 ,  G01N2291/011 ,  G01N2291/014 ,  G01N2291/0255 ,  G01N2291/0256 ,  G01N2291/0423 ,  G01N2291/0426 ,  C12Q2565/501 ,  C12Q2565/607

    摘要： The present invention provides the multifunctional biological and biochemical sensor technology based on ZnO nanostructures. The ZnO nanotips serve as strong DNA or protein molecule binding sites to enhance the immobilization. Patterned ZnO nanotips are used to provide conductivity-based biosensors. Patterned ZnO nanotips are also used as the gate for field-effect transistor (FET) type sensors. Patterned ZnO nanotips are integrated with SAW or BAW based biosensors. These ZnO nanotip based devices operate in multimodal operation combining electrical, acoustic and optical sensing mechanisms. The multifunctional biosensors can be arrayed and combined into one biochip, which will enhance the sensitivity and accuracy of biological and biochemical detection due to strong immobilization and multimodal operation capability. Such biological and biochemical sensor technology are useful in detection of RNA-DNA, DNA-DNA, protein-protein, protein-DNA and protein-small molecules interaction. It can be further applied for drug discovery, and for environmental monitoring and protection.

    摘要翻译： 本发明提供了基于ZnO纳米结构的多功能生物和生物化学传感器技术。 ZnO纳米尖端作为强的DNA或蛋白质分子结合位点来增强固定。 图案化的ZnO纳米尖端用于提供基于导电性的生物传感器。 图案化的ZnO纳米技术也用作场效应晶体管（FET）型传感器的栅极。 图案化的ZnO纳米片与SAW或基于BAW的生物传感器集成。 这些基于ZnO纳米管的器件在电气，声学和光学感测机构的多模式操作中工作。 多功能生物传感器可以排列并组合成一个生物芯片，由于强固定和多模态操作能力，提高了生物和生化检测的灵敏度和准确性。 这种生物和生化传感器技术可用于RNA-DNA，DNA-DNA，蛋白质 - 蛋白质，蛋白质 - DNA和蛋白质 - 小分子相互作用的检测。 可进一步应用于药物发现，环境监测和保护。