公开(公告)号：US06815824B2

公开(公告)日：2004-11-09

申请号：US10176588

申请日：2002-06-24

申请人： Yoshimi Shioya ,  Yuhko Nishimoto ,  Kazuo Maeda ,  Tomomi Suzuki ,  Hiroshi Ikakura

发明人： Yoshimi Shioya ,  Yuhko Nishimoto ,  Kazuo Maeda ,  Tomomi Suzuki ,  Hiroshi Ikakura

IPC分类号： H01L23485

CPC分类号： H01L21/76832 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/022 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3122 ,  H01L21/3145 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/3185 ,  H01L21/76834

摘要： The present invention relates to a semiconductor device in which a barrier insulating film is formed to cover a copper film or a wiring consisting mainly of the copper film. The barrier insulating film is a structure of two or more layers including at least a first barrier insulating film containing silicon, oxygen, nitrogen and hydrogen or silicon, oxygen, nitrogen, hydrogen and carbon, and a second barrier insulating film containing silicon, oxygen and hydrogen or silicon, oxygen, hydrogen and carbon.

公开(公告)号：US06479408B2

公开(公告)日：2002-11-12

申请号：US09843725

申请日：2001-04-30

申请人： Yoshimi Shioya ,  Kouichi Ohira ,  Kazuo Maeda

发明人： Yoshimi Shioya ,  Kouichi Ohira ,  Kazuo Maeda

IPC分类号： H01L2131

CPC分类号： H01L21/02126 ,  C23C16/30 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3122 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76834 ,  H01L21/76838

摘要： The present invention relates to a semiconductor device manufacturing method for forming an interlayer insulating film having a low dielectric constant by coating a copper wiring. The semiconductor device manufacturing method comprises the steps of preparing a substrate 21 from a surface of which copper wirings 23 are exposed, and forming an interlayer insulating film having a low dielectric constant on the substrate 21, wherein the interlayer insulating film is formed of a multi-layered insulating film including a insulating film 24 that contacts with the copper wirings 23, and the insulating film 24 is formed by plasmanizing a film forming gas containing an alkyl compound having an Si—O—Si bond and one oxygen-containing gas selected from the group consisting of N2O, H2O, and CO2, whose flow rate is equal to or less than a flow rate of the siloxane, to react mutually.

摘要翻译： 本发明涉及通过涂覆铜布线形成具有低介电常数的层间绝缘膜的半导体器件制造方法。 半导体器件制造方法包括从衬底21暴露的表面制备衬底21，并且在衬底21上形成具有低介电常数的层间绝缘膜的步骤，其中层间绝缘膜由多 包括与铜布线23接触的绝缘膜24的绝缘膜，绝缘膜24通过将含有具有Si-O-Si键的烷基化合物和一种含氧气体的成膜气体等离子化而形成，该含氧气体选自 由流动相等于或小于硅氧烷流量的N2O，H2O和CO2组成的组相互反应。

公开(公告)号：US06673725B2

公开(公告)日：2004-01-06

申请号：US09843726

申请日：2001-04-30

申请人： Yoshimi Shioya ,  Kouichi Ohira ,  Kazuo Maeda

发明人： Yoshimi Shioya ,  Kouichi Ohira ,  Kazuo Maeda

IPC分类号： H01L2131

CPC分类号： H01L21/02126 ,  C23C16/30 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76832 ,  H01L21/76834

摘要： The present invention relates to a semiconductor device manufacturing method for forming an interlayer insulating film having a low dielectric constant by coating a copper wiring. The low dielectric constant insulating film is formed by reaction of a plasma of a film-forming gas containing an oxygen-containing gas of N2O, H2O, or CO2, ammonia (NH3), and at least one of an alkyl compound having a siloxane bond and methylsilane (SiHn(CH3)4−n: n=0, 1, 2, 3).

摘要翻译： 本发明涉及通过涂覆铜布线形成具有低介电常数的层间绝缘膜的半导体器件制造方法。 低介电常数绝缘膜是通过含有N 2 O，H 2 O或CO 2的含氧气体，氨（NH 3）和至少一种具有硅氧烷键的烷基化合物的成膜气体的等离子体 和甲基硅烷（SiHn（CH 3）4-n：n = 0,1,2,3）。

公开(公告)号：US06780790B2

公开(公告)日：2004-08-24

申请号：US10287549

申请日：2002-11-05

申请人： Yoshimi Shioya ,  Yuhko Nishimoto ,  Tomomi Suzuki ,  Kazuo Maeda

发明人： Yoshimi Shioya ,  Yuhko Nishimoto ,  Tomomi Suzuki ,  Kazuo Maeda

IPC分类号： H01L21469

CPC分类号： H01L21/02126 ,  C23C16/308 ,  C23C16/401 ,  C23C16/455 ,  C23C16/45557 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02315 ,  H01L21/31633 ,  H01L21/76828 ,  H01L21/76834

摘要： A semiconductor device having a barrier insulating film covering a copper wiring is formed by a plasma enhanced CVD method. The method includes supplying high frequency power of a frequency of 1 MHz or more to a first electrode, and holding a substrate on which copper wiring is formed on a second electrode facing the first electrode; supplying a film forming gas containing an alkyl compound and an oxygen-containing gas between the first and second electrodes while regulating gas pressure of the film forming gas to 1 Torr or less; and supplying high frequency power to either of the first and second electrodes to convert the film forming gas into a plasma, and allowing the alkyl compound and the oxygen-containing gas of the film forming gas to react to form a barrier insulating film covering the surface of the substrate.

摘要翻译： 通过等离子体增强CVD法形成具有覆盖铜布线的阻挡绝缘膜的半导体器件。 该方法包括向第一电极提供1MHz或更高频率的高频功率，并且在面向第一电极的第二电极上保持在其上形成有铜布线的基板; 在第一和第二电极之间提供含有烷基化合物和含氧气体的成膜气体，同时将成膜气体的气体压力调节至1托或更小; 并向第一和第二电极中的任一个提供高频电力，以将成膜气体转化为等离子体，并使成膜气体的烷基化合物和含氧气体反应，形成覆盖表面的阻挡绝缘膜 的基底。

公开(公告)号：US20050221622A1

公开(公告)日：2005-10-06

申请号：US11090272

申请日：2005-03-28

申请人： Yoshimi Shioya ,  Haruo Shimoda ,  Kazuo Maeda

发明人： Yoshimi Shioya ,  Haruo Shimoda ,  Kazuo Maeda

IPC分类号： C23C16/42 ,  C09D4/00 ,  C23C16/40 ,  C23C16/509 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L21/469 ,  H01L21/4763

CPC分类号： H01L21/3122 ,  C09D4/00 ,  C23C16/401 ,  C23C16/509 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02362 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76835

摘要： The present invention relates to a deposition method in which an insulating film that coats wirings mainly made of copper film and has low dielectric constant. Its constitution in the deposition method, where deposition gas is transformed into plasma and reaction is caused to form the insulating film having low dielectric constant, is that the deposition gas has a first silicon containing compound having cyclic siloxane bond and at least one of methyl group and methoxy group, and a second silicon containing organic compound having straight-chain siloxane bond and at least one of methyl group and methoxy group, as primary constituent gas.

摘要翻译： 本发明涉及一种沉积方法，其中涂覆主要由铜膜制成的布线并具有低介电常数的绝缘膜。 使沉积气体转化为等离子体并进行反应的沉积方法的结构形成具有低介电常数的绝缘膜，即沉积气体具有含有环状硅氧烷键的第一含硅化合物和甲基的至少一种 和甲氧基，以及具有直链硅氧烷键和甲基和甲氧基中的至少一个作为主要构成气体的第二含硅有机化合物。

公开(公告)号：US07329612B2

公开(公告)日：2008-02-12

申请号：US10530730

申请日：2003-10-20

申请人： Yoshimi Shioya ,  Yuhko Nishimoto ,  Kazuo Maeda

发明人： Yoshimi Shioya ,  Yuhko Nishimoto ,  Kazuo Maeda

IPC分类号： H01L21/469 ,  H01L21/31

CPC分类号： H01L23/53295 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02362 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76835 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device is manufactured by the steps of generating a film forming gas by setting a flow rate ratio of H2O to any one of a silicon-contained organic compound having a siloxane bond and a silicon-contained organic compound having a CH3 group to 4 or more and adjusting a gas pressure to 1.5 Torr or more, applying a power to the film forming gas to generate a plasma thereof so as to react it, and thus forming a low-dielectric insulating film (62) on a substrate (61), plasmanizing a process gas containing at least any one of He, Ar, H2 or deuterium, and bringing the low-dielectric insulating film (62) into contact with the plasma of the process gas.

摘要翻译： 通过以下步骤制造半导体器件：通过将H 2 O 2的流量比设定为具有硅氧烷键的含硅有机化合物和含硅的有机化合物中的任何一种来生成成膜气体 具有CH 3 3〜4以上的有机化合物，将气体压力调节至1.5Torr以上，向成膜气体施加电力，生成等离子体，使其反应， 在基板（61）上形成低介电绝缘膜（62），使包含He，Ar，H 2或氘中的至少任何一种的工艺气体均质化，并使低介电绝缘层 膜（62）与工艺气体的等离子体接触。

公开(公告)号：US07238629B2

公开(公告)日：2007-07-03

申请号：US10867178

申请日：2004-06-15

申请人： Yoshimi Shioya ,  Kazuo Maeda

发明人： Yoshimi Shioya ,  Kazuo Maeda

IPC分类号： H01L21/44 ,  H01L21/469 ,  H01L21/31

CPC分类号： H01L21/02216 ,  C23C16/401 ,  H01L21/02274 ,  H01L21/3121 ,  H01L21/3122

摘要： The present invention relates to a deposition method of a low dielectric constant insulating film, which comprises the steps of generating a first deposition gas containing at least one silicon source selecting from the group consisting of silicon containing organic compound having siloxane bond and silicon containing organic compound having CH3 group, and an oxidizing agent consisting of oxygen containing organic compound having alkoxyl group (OR: O is oxygen and R is CH3 or C2H5), and applying electric power to the first deposition gas to generate plasma and then causing reaction to form a low dielectric constant insulating film on a substrate.

摘要翻译： 本发明涉及一种低介电常数绝缘膜的沉积方法，其包括以下步骤：产生包含至少一个硅源的第一沉积气体，其选自含有硅氧烷键的含硅有机化合物和含硅有机化合物 具有CH 3 3个基团的氧化剂和由具有烷氧基的含氧有机化合物（OR：O是氧而R是CH 3或C 2）组成的氧化剂， 向第一沉积气体施加电力以产生等离子体，然后引起反应，从而在衬底上形成低介电常数绝缘膜。

公开(公告)号：US20060099725A1

公开(公告)日：2006-05-11

申请号：US10530730

申请日：2003-10-20

申请人： Yoshimi Shioya ,  Yuhko Nishimoto ,  Kazuo Maeda

发明人： Yoshimi Shioya ,  Yuhko Nishimoto ,  Kazuo Maeda

IPC分类号： H01L21/00

CPC分类号： H01L23/53295 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02362 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76835 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device is manufactured by the steps of generating a film forming gas by setting a flow rate ratio of H2O to any one of a silicon-contained organic compound having a siloxane bond and a silicon-contained organic compound having a CH3 group to 4 or more and adjusting a gas pressure to 1.5 Torr or more, applying a power to the film forming gas to generate a plasma thereof so as to react it, and thus forming a low-dielectric insulating film (62) on a substrate (61), plasmanizing a process gas containing at least any one of He, Ar, H2 or deuterium, and bringing the low-dielectric insulating film (62) into contact with the plasma of the process gas.

摘要翻译： 通过以下步骤制造半导体器件：通过将H 2 O 2的流量比设定为具有硅氧烷键的含硅有机化合物和含硅的有机化合物中的任何一种来生成成膜气体 具有CH 3 3〜4以上的有机化合物，将气体压力调节至1.5Torr以上，向成膜气体施加电力，生成等离子体，使其反应， 在基板（61）上形成低介电绝缘膜（62），使包含He，Ar，H 2或氘中的至少任何一种的工艺气体均质化，并使低介电绝缘层 膜（62）与工艺气体的等离子体接触。

公开(公告)号：US20050014391A1

公开(公告)日：2005-01-20

申请号：US10867178

申请日：2004-06-15

申请人： Yoshimi Shioya ,  Kazuo Maeda

发明人： Yoshimi Shioya ,  Kazuo Maeda

IPC分类号： C23C16/42 ,  C23C16/40 ,  H01L21/205 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H01L21/31

CPC分类号： H01L21/02216 ,  C23C16/401 ,  H01L21/02274 ,  H01L21/3121 ,  H01L21/3122

摘要： The present invention relates to a deposition method of a low dielectric constant insulating film, which comprises the steps of generating a first deposition gas containing at least one silicon source selecting from the group consisting of silicon containing organic compound having siloxane bond and silicon containing organic compound having CH3 group, and an oxidizing agent consisting of oxygen containing organic compound having alkoxyl group (OR: O is oxygen and R is CH3 or C2H5), and applying electric power to the first deposition gas to generate plasma and then causing reaction to form a low dielectric constant insulating film on a substrate.

摘要翻译： 本发明涉及一种低介电常数绝缘膜的沉积方法，其包括以下步骤：产生包含至少一个硅源的第一沉积气体，其选自含有硅氧烷键的含硅有机化合物和含硅有机化合物 具有CH3基团的氧化剂和由具有烷氧基的含氧有机化合物（OR：O是氧而R是CH3或C2H5）组成的氧化剂，并且向第一沉积气体施加电力以产生等离子体，然后使反应形成 低介电常数绝缘膜。

公开(公告)号：US07132171B2

公开(公告)日：2006-11-07

申请号：US10847670

申请日：2004-05-18

申请人： Toshiyuki Ohdaira ,  Yoshimi Shioya

发明人： Toshiyuki Ohdaira ,  Yoshimi Shioya

IPC分类号： B32B25/20

CPC分类号： H01L21/02126 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02137 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/3122 ,  H01L21/31612 ,  H01L21/31633 ,  Y10T428/31663

摘要： The present invention relates to a method of forming a low dielectric constant insulating film. Its constitution has the steps of: (a) forming an insulating film containing Si—CH3 bond in the skeleton of Si—O—Si on a substrate; (b) irradiating ultraviolet ray to the insulating film in reduced-pressure atmosphere to break CH3 groups from Si—CH3 bond in the insulating film; and (c) ejecting the broken CH3 groups from the insulating film.