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    LASER SYSTEM
    15.
    发明申请
    LASER SYSTEM 有权
    激光系统

    公开(公告)号：US20170070023A1

    公开(公告)日：2017-03-09

    申请号：US15354670

    申请日：2016-11-17

    申请人： Gigaphoton Inc.

    发明人： Hiroshi UMEDA ,  Takeshi ASAYAMA ,  Osamu WAKABAYASHI

    IPC分类号： H01S3/097 ,  H01S3/23

    CPC分类号： H01S3/09702 ,  B23K26/00 ,  B23K26/0608 ,  H01L21/02686 ,  H01L21/67115 ,  H01S3/0057 ,  H01S3/104 ,  H01S3/1305 ,  H01S3/1394 ,  H01S3/225 ,  H01S3/2308 ,  H01S3/2383

    摘要： The laser system may include a delay circuit unit, first and second trigger-correction units, and a clock generator. The delay circuit unit may receive a trigger signal, output a first delay signal obtained by delaying the trigger signal by a first delay time, and output a second delay signal obtained by delaying the trigger signal by a second delay time. The first trigger-correction unit may receive the first delay signal and output a first switch signal obtained by delaying the first delay signal by a first correction time. The second trigger-correction unit may receive the second delay signal and output a second switch signal obtained by delaying the second delay signal by a second correction time. The clock generator may generate a clock signal that is common to the delay circuit unit and the first and second trigger-correction units.

    摘要翻译： 激光系统可以包括延迟电路单元，第一和第二触发校正单元以及时钟发生器。 延迟电路单元可以接收触发信号，输出通过将触发信号延迟第一延迟时间而获得的第一延迟信号，并输出通过将触发信号延迟第二延迟时间而获得的第二延迟信号。 第一触发校正单元可以接收第一延迟信号并输出​​通过将第一延迟信号延迟第一校正时间而获得的第一开关信号。 第二触发校正单元可以接收第二延迟信号并输出​​通过将第二延迟信号延迟第二校正时间而获得的第二开关信号。 时钟发生器可以产生延迟电路单元和第一和第二触发校正单元共用的时钟信号。

    Laser annealing systems and methods with ultra-short dwell times
    16.
    发明授权
    Laser annealing systems and methods with ultra-short dwell times 有权
    具有超短停留时间的激光退火系统和方法

    公开(公告)号：US09558973B2

    公开(公告)日：2017-01-31

    申请号：US14490446

    申请日：2014-09-18

    申请人： Ultratech, Inc.

    发明人： Andrew M. Hawryluk ,  Serguel Anikitchev

    IPC分类号： H01L21/00 ,  B23K26/08 ,  H01L21/67 ,  B23K26/00 ,  B23K26/03 ,  H01L21/02

    CPC分类号： H01L21/67115 ,  B23K26/00 ,  B23K26/034 ,  B23K26/08 ,  B23K2103/56 ,  H01L21/00 ,  H01L21/02675 ,  H01L21/268 ,  H01L21/67248

    摘要： Laser annealing systems and methods for annealing a semiconductor wafer with ultra-short dwell times are disclosed. The laser annealing systems can include one or two laser beams that at least partially overlap. One of the laser beams is a pre-heat laser beam and the other laser beam is the annealing laser beam. The annealing laser beam scans sufficiently fast so that the dwell time is in the range from about 1 μs to about 100 μs. These ultra-short dwell times are useful for annealing product wafers formed from thin device wafers because they prevent the device side of the device wafer from being damaged by heating during the annealing process. Embodiments of single-laser-beam annealing systems and methods are also disclosed.

    摘要翻译： 公开了具有超短停留时间的半导体晶片退火的激光退火系统和方法。 激光退火系统可以包括至少部分重叠的一个或两个激光束。 其中一个激光束是预热激光束，另一个激光束是退火激光束。 退火激光束扫描足够快，使得停留时间在约1μs至约100μs的范围内。 这些超短停留时间对于退火由薄的器件晶片形成的产品晶片是有用的，因为它们防止器件晶片的器件侧在退火过程中被加热而损坏。 还公开了单激光束退火系统和方法的实施例。

    SLAG FREE FLUX FOR ADDITIVE MANUFACTURING
    18.
    发明申请
    SLAG FREE FLUX FOR ADDITIVE MANUFACTURING 有权
    用于添加剂制造的SLAG FREE FLUX

    公开(公告)号：US20170014956A1

    公开(公告)日：2017-01-19

    申请号：US14800784

    申请日：2015-07-16

    申请人： Siemens Energy, Inc.

    发明人： Gerald J. Bruck ,  Ahmed Kamel

    IPC分类号： B23K35/365 ,  B23K35/36 ,  B23K35/02

    CPC分类号： B23K35/365 ,  B23K26/00 ,  B23K26/342 ,  B23K35/0255 ,  B23K35/3602 ,  B23K35/3603 ,  B23K35/3605 ,  B23K35/3607 ,  B23K35/3608 ,  B23K35/361

    摘要： A flux (55) for superalloy laser welding and additive processing (20, 50), including constituents which decompose when heated in a laser induced plasma or to a melt temperature of the superalloy (42), creating one or more gases (46) that blanket the melt to protect it from air, while producing not more than 5 wt. % of slag relative to the weight of the flux. Embodiments may further include compounds providing one or more functions of surface cleaning, scavenging of impurities in the melt, and elemental additions to the superalloy.

    摘要翻译： 一种用于超级合金激光焊接和添加剂加工（20,50）的焊剂（55），包括当在激光诱导等离子体中加热时分解的成分或高温合金（42）的熔融温度而分解的成分，形成一种或多种气体（46）， 覆盖熔体以保护其免受空气侵害，同时产生不超过5wt。 渣的％相对于助焊剂的重量。 实施方案可以进一步包括提供表面清洁，清除熔体中杂质的一种或多种功能以及向超级合金元素添加的化合物。

    ALIGNMENT METHOD
    19.
    发明申请
    ALIGNMENT METHOD 有权
    对准方法

    公开(公告)号：US20160225134A1

    公开(公告)日：2016-08-04

    申请号：US15004554

    申请日：2016-01-22

    申请人： DISCO CORPORATION

    发明人： Makoto Tanaka

    IPC分类号： G06T7/00

    CPC分类号： G06T7/74 ,  B23K26/00 ,  G06T2207/30164 ,  G06T2207/30204

    摘要： An alignment method includes: a storage step that images a first workpiece on a chuck table and stores positions of alignment marks corresponding to scheduled division lines and positional relationships of the division lines with the alignment marks; a holding step that holds a second workpiece with the chuck table; a detection step that images positions of the alignment marks on the second workpiece, the positions corresponding to the stored alignment mark positions, and detects the alignment marks of the second workpiece; and an identification step that identifies positions of scheduled division lines of the second workpiece on the basis of the detected positions of the alignment marks of the second workpiece and the stored positional relationships. If one of the alignment marks of the second workpiece cannot be detected at one of the stored alignment mark positions, the detection step detects other adjacent alignment marks.

    摘要翻译： 对准方法包括：存储步骤，其将第一工件图像在卡盘台上，并将对应于调度分割线的对准标记的位置和分割线与对准标记的位置关系存储; 保持步骤，用夹持台保持第二工件; 检测步骤，对第二工件上的对准标记的位置进行成像，对应于存储的对准标记位置的位置，检测第二工件的对准标记; 以及识别步骤，基于检测到的第二工件的对准标记的位置和存储的位置关系来识别第二工件的调度分割线的位置。 如果在所存储的对准标记位置之一处不能检测到第二工件的对准标记之一，则检测步骤检测其它相邻对准标记。

    Integrated laser material processing cell
    20.
    发明授权
    Integrated laser material processing cell 有权
    集成激光材料处理电池

    公开(公告)号：US09381603B2

    公开(公告)日：2016-07-05

    申请号：US14100855

    申请日：2013-12-09

    申请人： PURDUE RESEARCH FOUNDATION

    发明人： Yung C. Shin

    IPC分类号： B23K26/00 ,  B23P25/00 ,  B23K26/34 ,  B23C1/00 ,  B23K28/02 ,  B23K26/14 ,  B23K35/02

    CPC分类号： B23P25/006 ,  B23C1/002 ,  B23K26/00 ,  B23K26/0093 ,  B23K26/147 ,  B23K26/34 ,  B23K28/02 ,  B23K35/0244 ,  Y10T409/303752 ,  Y10T409/303976

    摘要： An integrated laser material processing cell allowing laser-assisted machining to be used in conjunction with directed material deposition in a single setup, achieving greater geometric accuracy and better surface finish than currently possible in existing laser freeform fabrication techniques. The integration of these two processes takes advantage of their common use of laser beam heat to process materials. The cell involves a multi-axis laser-assisted milling machine having a work spindle, a laser emitter, and means for positioning the emitter with respect to the spindle so as to direct a laser beam onto a localized area of a work piece in proximity to a cutting tool mounted in the spindle. A powder delivery nozzle mounted on the machine and positioned adjacent to the emitter delivers powder to a deposition zone in the path of the beam, such that material deposition and laser-assisted milling may be performed substantially simultaneously in a single workspace.

    摘要翻译： 一种集成激光材料处理单元，允许激光辅助加工与单一设置中的定向材料沉积结合使用，实现比现有的激光自由形状制造技术中目前可能的更大的几何精度和更好的表面光洁度。 这两个过程的整合利用了它们常用的激光束热来处理材料。 该电池涉及具有工作主轴，激光发射器和用于相对于主轴定位发射器的装置的多轴激光辅助铣床，以便将激光束引导到接近于工件的工件的局部区域 安装在主轴上的切割工具。 安装在机器上并邻近发射器定位的粉末输送喷嘴将粉末输送到梁的路径中的沉积区域，使得材料沉积和激光辅助研磨可以在单个工作空间中基本上同时进行。