公开(公告)号：US20240199915A1

公开(公告)日：2024-06-20

申请号：US18275266

申请日：2022-02-02

Applicant: FUJIMI INCORPORATION

Inventor： Yuichiro Nakagai ,  Yasuaki ITO ,  Hiroyuki ODA ,  Shogaku IDE ,  Shinichiro TAKAMI

IPC: C09G1/02 ,  B24B37/04 ,  H01L21/02

CPC classification number: C09G1/02 ,  B24B37/044 ,  H01L21/02013

Abstract: Provided is a polishing composition containing an abrasive, permanganate, an aluminum salt, and water. In the polishing composition, a relation of a content W1 [% by weight] of the abrasive, a concentration C1 [mM] of the permanganate, and a concentration C2 [mM] of the aluminum salt satisfies at least one condition of the following conditions [A], [B], and [C]:


satisfying both of 500≤(C1/W1) and 0.04≤(C2/C1);  [A]



satisfying both of 200≤(C1/√(W1)) and 8≤C2; and  [B]



satisfying both of 500≤(C1/W1) and 8≤C2.  [C]

公开(公告)号：US20240191101A1

公开(公告)日：2024-06-13

申请号：US18556230

申请日：2022-05-10

Applicant: Araca Inc.

Inventor： Ara Philipossian ,  Yasa Sampumo ,  Jason A. Keleher ,  Katherine Wortman-Otto ,  Abigail Linhart ,  Kiana A. Cahue

IPC: C09G1/02

CPC classification number: C09G1/02

Abstract: A method for polishing a silicon carbide surface. The silicon carbide surface is polished with a particulate abrasive while exposed to a composition of water, an oxidizing agent and an electrophile. The method provides material removal rates (MRR) that are competitive with, or superior to, conventional methods without utilizing harsh chemicals.

公开(公告)号：US12002684B2

公开(公告)日：2024-06-04

申请号：US18057728

申请日：2022-11-21

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Ji Cui ,  Fu-Ming Huang ,  Ting-Kui Chang ,  Tang-Kuei Chang ,  Chun-Chieh Lin ,  Wei-Wei Liang ,  Liang-Guang Chen ,  Kei-Wei Chen ,  Hung Yen ,  Ting-Hsun Chang ,  Chi-Hsiang Shen ,  Li-Chieh Wu ,  Chi-Jen Liu

IPC: H01L21/321 ,  B24B37/04 ,  B24B37/10 ,  C09G1/02

CPC classification number: H01L21/3212 ,  B24B37/044 ,  B24B37/107 ,  C09G1/02

Abstract: A method for CMP includes following operations. A metal stack is received. The metal layer stack includes at least a first metal layer and a second metal layer, and a top surface of the first metal layer and a top surface of the second metal layer are exposed. A protecting layer is formed over the second metal layer. A portion of the first metal layer is etched. The protecting layer protects the second metal layer during the etching of the portion of the first metal layer. A top surface of the etched first metal layer is lower than a top surface of the protecting layer. The protecting layer is removed from the second metal layer.

公开(公告)号：US11999876B2

公开(公告)日：2024-06-04

申请号：US17669519

申请日：2022-02-11

Applicant: FUJIFILM ELECTRONIC MATERIALS U.S.A., INC.

Inventor： David (Tawei) Lin ,  Bin Hu ,  Liqing (Richard) Wen ,  Yannan Liang ,  Ting-Kai Huang

IPC: C09G1/02 ,  C23F1/00 ,  C23F1/44 ,  H01L21/306 ,  H01L21/321

CPC classification number: C09G1/02 ,  C23F1/00 ,  C23F1/44 ,  H01L21/30625 ,  H01L21/3212

Abstract: The compositions of the present disclosure polish surfaces or substrates that at least partially include ruthenium. The composition includes a synergistic combination of ammonia and oxygenated halogen compound. The composition may further include abrasive and acid(s). A polishing composition for use on ruthenium materials may include ammonia, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition; hydrogen periodate, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition; silica, present in an amount of 0.01 wt % to 12 wt %, based on the total weight of the composition; and organic sulfonic acid, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition, wherein the pH of the composition is between 6 and 8.

公开(公告)号：US20240150614A1

公开(公告)日：2024-05-09

申请号：US18385340

申请日：2023-10-30

Applicant: ENTEGRIS, INC.

Inventor： Tsuyoshi MASUDA ,  Ryuta KUMASHIRO ,  Hironao FUJII ,  Takamasa KANAI ,  Hiroshi KITAMURA ,  Helin HUANG ,  Yoshiyuki MATSUMURA

IPC: C09G1/02 ,  B24B37/04 ,  C09K13/00 ,  C09K13/04 ,  H01L21/306

CPC classification number: C09G1/02 ,  B24B37/044 ,  C09K13/00 ,  C09K13/04 ,  H01L21/30625

Abstract: The invention provides a chemical-mechanical polishing composition comprising: (a) an abrasive particle; (b) an ionic oxidizer; and (c) water, wherein the chemical-mechanical polishing composition has a pH of about 1 to about 7, the abrasive particle has an isoelectric point that is higher than 8, and the ionic oxidizer has a negative charge at the pH of the chemical-mechanical polishing composition. The invention also provides a method of chemically-mechanically polishing a substrate, especially a substrate comprising a silicon carbide layer on a surface of the substrate, using said composition.

公开(公告)号：US20240117220A1

公开(公告)日：2024-04-11

申请号：US18378111

申请日：2023-10-09

Applicant: CMC Materials LLC

Inventor： Alex Villani-Gale ,  Elliot Knapton ,  Brian Reiss

IPC: C09G1/02 ,  C09K13/00 ,  H01L21/306

CPC classification number: C09G1/02 ,  C09K13/00 ,  H01L21/30625

Abstract: The invention provides a chemical-mechanical polishing composition comprising: (a) a silica abrasive; (b) an oxidizing agent; and (c) water, wherein the chemical-mechanical polishing composition has a pH of about 2 or less. The invention also provides a method of chemically-mechanically polishing a substrate, especially a substrate comprising a boron-doped polysilicon layer on a surface of the substrate, using said composition.

公开(公告)号：US20240117219A1

公开(公告)日：2024-04-11

申请号：US18275321

申请日：2022-02-02

Applicant: FUJIMI INCORPORATED

Inventor： Yasuaki ITO ,  Hiroyuki ODA ,  Yuichiro NAKAGAI ,  Shogaku IDE ,  Naoto NOGUCHI ,  Shinichiro TAKAMI

IPC: C09G1/02 ,  B24B37/04

CPC classification number: C09G1/02 ,  B24B37/044 ,  H01L21/30625

Abstract: Provided is a polishing composition that can reduce increase in temperature of a polishing pad during polishing. The polishing composition provided by the present invention contains water, oxidant A selected from compounds other than peroxide, a first metal salt selected from alkaline-earth metal salts, and a second metal salt selected from salts each of which has a cation of a metal belonging to groups 3 to 16 in the periodic table, and an anion.

公开(公告)号：US20240084171A1

公开(公告)日：2024-03-14

申请号：US18512948

申请日：2023-11-17

Applicant: DONGJIN SEMICHEM CO., LTD.

Inventor： Hee Suk KIM ,  Goo Hwa LEE ,  Jae Hong YOO ,  Jong Dai PARK ,  Jae Hyun KIM

IPC: C09G1/02

CPC classification number: C09G1/02

Abstract: The present disclosure relates to an organic film polishing composition in which a high polishing speed is maintained not only for polymers, an SOC, and an SOH, but also for organic films strongly bonded by covalent bonds such as an amorphous carbon layer (ACL) or a diamond-like carbon (DLC) by including a polishing accelerator containing both a hydrophilic group and a hydrophobic group, and a polishing method using the same.

公开(公告)号：US20240052202A1

公开(公告)日：2024-02-15

申请号：US18258555

申请日：2021-11-17

Applicant: NITTA DuPont Incorporated

Inventor： Noriaki SUGITA

IPC: C09G1/02 ,  B24B37/04 ,  H01L21/306 ,  C09K3/14

CPC classification number: C09G1/02 ,  B24B37/044 ,  H01L21/30625 ,  C09K3/14

Abstract: A polishing composition is provided that can reduce micro-defects on a semiconductor wafer after polishing. A polishing composition includes: an abrasive; a basic compound; a wetting agent; and a non-ionic surfactant, where the surface tension Υud is not higher than 64 mN/m, and the ratio of the surface tension after dilution with water by a factor of 20, Υd, to the surface tension Υud, denoted by Υd/Υud, is not lower than 1.10 and not higher than 1.40. Here, the surface tensions Υud and Υd are measurements at 25° C.

公开(公告)号：US20240043718A1

公开(公告)日：2024-02-08

申请号：US18255600

申请日：2021-10-18

Applicant: SK enpulse Co., Ltd.

Inventor： Han Teo PARK ,  Deok Su HAN ,  Jang Kuk KWON ,  Seung Chul HONG

IPC: C09G1/02 ,  H01L21/306

CPC classification number: C09G1/02 ,  H01L21/30625

Abstract: The present invention relates to a polishing composition for a semiconductor process, a method of preparing the polishing composition, and a method of fabricating a semiconductor device using the polishing composition. The polishing composition for a semiconductor process may be applied to a process of polishing an amorphous carbon layer, may exhibit a high removal rate of the amorphous carbon layer, may prevent the occurrence of defects by preventing carbon residue from being re-adsorbed onto a semiconductor substrate during the polishing process, and has excellent storage stability. The present invention may also provide a method of fabricating a semiconductor device using the polishing composition for a semiconductor process.