公开(公告)号：US20180080120A1

公开(公告)日：2018-03-22

申请号：US15560733

申请日：2016-04-01

Applicant: Tosoh SMD, Inc.

Inventor： Eugene Y. Ivanov ,  Matthew Fisher ,  Alex Kuhn

IPC: C23C14/34 ,  C22C27/02 ,  C22F1/18 ,  H01J37/34 ,  B21B1/02 ,  B21B15/00

CPC classification number: C23C14/3414 ,  B21B1/024 ,  B21B1/026 ,  B21B15/0007 ,  B21B2015/0014 ,  B21B2015/0021 ,  C22C27/02 ,  C22F1/18 ,  H01J37/3426

Abstract: Methods for making Ta sputter targets and sputter targets made thereby. Ta ingots are compressed along at least two of the x, y, and z dimensions and then cross rolled in at least one of those dimensions. A pair of target blanks is then cut from the cross rolled ingot. The resulting targets have a predominate mix of {100} and {111} textures and have reduced B {100} and B {111} banding factors.

公开(公告)号：US09890452B2

公开(公告)日：2018-02-13

申请号：US14384749

申请日：2013-03-19

Applicant: JX Nippon Mining & Metals Corporation

Inventor： Kotaro Nagatsu ,  Shinichiro Senda

IPC: C23C14/34 ,  C22F1/18 ,  C22C27/02 ,  B22D21/06 ,  C23C14/14 ,  H01J37/34 ,  H01L21/285 ,  H01L21/768

CPC classification number: C23C14/3414 ,  B22D21/06 ,  C22C27/02 ,  C22F1/18 ,  C23C14/14 ,  H01J37/3426 ,  H01J2237/332 ,  H01L21/2855 ,  H01L21/76843

Abstract: Provided is a tantalum sputtering target, which is characterized that an average crystal grain size of the target is 50 μm or more and 200 μm or less, and variation of a crystal grain size in the target plane is 40% or higher and 60% or less. This invention aims to provide a tantalum sputtering target capable of improving the uniformity of the film thickness and reducing the variation of the resistance value (sheet resistance).

公开(公告)号：US09791394B2

公开(公告)日：2017-10-17

申请号：US14282691

申请日：2014-05-20

Applicant: Massachusetts Institute of Technology

Inventor： Heather A. Murdoch ,  Christopher A. Schuh

IPC: G01N25/00 ,  G01N25/02 ,  C22C5/02 ,  C22C5/04 ,  C22C5/06 ,  C22C9/00 ,  C22C11/00 ,  C22C12/00 ,  C22C13/00 ,  C22C14/00 ,  C22C16/00 ,  C22C18/00 ,  C22C19/03 ,  C22C19/07 ,  C22C20/00 ,  C22C24/00 ,  C22C27/00 ,  C22C27/02 ,  C22C27/04 ,  C22C28/00 ,  C22C38/06 ,  C22C1/00 ,  C22C45/00

CPC classification number: G01N25/02 ,  C22C1/002 ,  C22C5/02 ,  C22C5/04 ,  C22C5/06 ,  C22C9/00 ,  C22C11/00 ,  C22C12/00 ,  C22C13/00 ,  C22C14/00 ,  C22C16/00 ,  C22C18/00 ,  C22C19/03 ,  C22C19/07 ,  C22C20/00 ,  C22C24/00 ,  C22C27/00 ,  C22C27/02 ,  C22C27/04 ,  C22C28/00 ,  C22C38/06 ,  C22C45/00

Abstract: Provided in one embodiment is a method of identifying a stable phase of an ordering binary alloy system comprising a solute element and a solvent element, the method comprising: determining at least three thermodynamic parameters associated with grain boundary segregation, phase separation, and intermetallic compound formation of the ordering binary alloy system; and identifying the stable phase of the ordering binary alloy system based on the first thermodynamic parameter, the second thermodynamic parameter and the third thermodynamic parameter by comparing the first thermodynamic parameter, the second thermodynamic parameter and the third thermodynamic parameter with a predetermined set of respective thermodynamic parameters to identify the stable phase; wherein the stable phase is one of a stable nanocrystalline phase, a metastable nanocrystalline phase, and a non-nanocrystalline phase.

公开(公告)号：US09724759B2

公开(公告)日：2017-08-08

申请号：US15122743

申请日：2015-02-17

Applicant: MEIDENSHA CORPORATION

Inventor： Kaoru Kitakizaki ,  Keita Ishikawa ,  Shota Hayashi ,  Nobutaka Suzuki ,  Kosuke Hasegawa

IPC: H01H33/664 ,  B22F3/16 ,  B22F1/00 ,  B22F3/26 ,  C22C27/04 ,  H01H1/025

CPC classification number: B22F3/16 ,  B22F1/0007 ,  B22F3/26 ,  B22F2301/10 ,  B22F2301/20 ,  B22F2304/10 ,  B22F2998/10 ,  C22C1/045 ,  C22C9/00 ,  C22C27/02 ,  C22C27/04 ,  C22C27/06 ,  C22C30/02 ,  H01H1/025 ,  H01H33/664 ,  B22F1/0003 ,  B22F3/10 ,  B22F9/04 ,  B22F3/02

Abstract: A method for producing an electrode material, involving: (i) a step of preparing a powder of a solid solution of Cr and a heat resistant material selected from the group consisting of Mo, W, Ta, Nb, V and Zr, wherein either a peak corresponding to Cr element or a peak corresponding to the heat resistant element, which are observed by X ray diffraction measurement made on the powder of the solid solution, disappears; (ii) a step of molding the powder of the solid solution to obtain a molded body and then sintering the molded body to produce a sintered body; and (iii) a Cu infiltration step of infiltrating the sintered body with Cu.

公开(公告)号：US20170213959A1

公开(公告)日：2017-07-27

申请号：US15324691

申请日：2014-07-30

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Gary GIBSON ,  James Elmer ABBOTT Jr. ,  Zhiyong LI

IPC: H01L45/00 ,  C22C30/00 ,  C22C27/04 ,  C22C5/04 ,  H01L27/24 ,  C22C27/02

CPC classification number: H01L45/128 ,  C22C5/04 ,  C22C27/02 ,  C22C27/04 ,  C22C30/00 ,  H01L27/2427 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1206 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/142 ,  H01L45/143 ,  H01L45/146 ,  H01L45/148 ,  H01L45/16

Abstract: A non-volatile memory device includes two electrodes and an active region disposed between and in electrical contact with the electrodes. The active region contains a switching material capable of carrying a species of dopants and transporting the dopants under an electrical field. The electrode is an amorphous conductive material comprising 5 to 90 at % of a first metal, 5 to 90 at % of a second metal, and 5 to 90 at % of a metalloid, wherein the metalloid is any of carbon, silicon, and boron. The metalloid, the first metal, and the second metal account for at least 70 at % of the amorphous conductive material.

公开(公告)号：US20170209925A1

公开(公告)日：2017-07-27

申请号：US15328501

申请日：2014-08-12

Applicant: Global Advanced Metals USA, Inc.

Inventor： Eiji Kataoka ,  Shuhei Yoshikawa ,  John Koenitzer

IPC: B22F1/00 ,  H01G9/042 ,  C22C27/02 ,  B22F9/04 ,  B22F9/08

CPC classification number: B22F1/0096 ,  B22F1/0088 ,  B22F9/026 ,  B22F9/04 ,  B22F9/08 ,  B22F9/20 ,  B22F9/24 ,  B22F9/28 ,  B22F2201/20 ,  B22F2998/10 ,  C01G33/00 ,  C01P2002/54 ,  C01P2004/51 ,  C01P2004/61 ,  C01P2006/10 ,  C01P2006/12 ,  C04B35/495 ,  C04B35/62655 ,  C04B2235/3253 ,  C04B2235/5409 ,  C04B2235/5436 ,  C04B2235/5463 ,  C04B2235/72 ,  C04B2235/721 ,  C04B2235/722 ,  C04B2235/723 ,  C04B2235/727 ,  C04B2235/728 ,  C22C1/045 ,  C22C27/02 ,  H01G9/042 ,  H01G9/052 ,  H01G9/0525 ,  B22F9/10 ,  B22F1/0085 ,  B22F2201/10 ,  B22F3/10

Abstract: The present invention related to a method to make capacitor grade powder. The method includes the use of a spray dryer that includes a rotating atomizer disk to form agglomerated powder and the method further includes a heat treatment step. Capacitor grade powder formed by the methods of the present invention are further described.

公开(公告)号：US09711262B2

公开(公告)日：2017-07-18

申请号：US14510973

申请日：2014-10-09

Applicant: FURUKAWA ELECTRIC CO., LTD. ,  TOHOKU UNIVERSITY

Inventor： Masahiro Sugimoto ,  Hirokazu Tsubouchi ,  Kazuo Watanabe ,  Satoshi Awaji ,  Hidetoshi Oguro

IPC: H01B12/00 ,  H01L39/14 ,  H01B12/08 ,  H01L39/24 ,  C22C9/00 ,  C22C9/02 ,  C22C27/02 ,  H01B13/00 ,  B21C1/00

CPC classification number: H01B12/08 ,  B21C1/003 ,  B32B15/01 ,  B32B15/02 ,  C22C9/00 ,  C22C9/02 ,  C22C27/02 ,  C22F1/00 ,  C22F1/08 ,  H01B13/0026 ,  H01L39/14 ,  H01L39/2403 ,  H01L39/2406 ,  Y10T29/49014 ,  Y10T428/12438 ,  Y10T428/12444 ,  Y10T428/12778 ,  Y10T428/12819

Abstract: A compound superconducting wire 10 includes a reinforcement portion 12 and a compound superconductor 11. In the reinforcement portion 12, an assembly of plural reinforcement elements 4 are disposed. The reinforcement elements 4 each include plural reinforcement filaments 1 disposed in a stabilizer 2, and a stabilizing layer 3 at the outer periphery thereof. The reinforcement filaments 1 each mainly contain one or more metals selected from the group consisting of Nb, Ta, V, W, Mo, Fe, and Hf, an alloy consisting of two or more metals selected from the aforementioned group, or an alloy consisting of copper and one or more metals selected from the aforementioned group.

公开(公告)号：US20170069429A1

公开(公告)日：2017-03-09

申请号：US15338577

申请日：2016-10-31

Applicant: KEMET Electronics Corporation

Inventor： Brady A. Jones ,  Matthew W. Dufur ,  James Allan Fife

IPC: H01G9/042 ,  C22C27/02 ,  B22F1/00 ,  B22F9/04 ,  H01G9/00 ,  H01G9/052

CPC classification number: H01G9/042 ,  B02C17/00 ,  B22F1/0011 ,  B22F1/0055 ,  B22F9/04 ,  B22F2009/043 ,  B22F2301/20 ,  B22F2998/10 ,  C22C1/045 ,  C22C27/02 ,  C22C30/00 ,  H01G9/0029 ,  H01G9/0525 ,  H01G9/15 ,  H01G2009/05 ,  Y10T428/12014

Abstract: A method for increasing surface area of a valve metal particle is provided as is an improved valve metal particle provided thereby. The method includes charging a mill apparatus with a valve metal powder and a media wherein the media has an average diameter of at least 0.01 cm to no more than 0.3175 cm. The valve metal powder is then milled at an average kinetic energy of no more than 3,000 ergs per media particle to obtain a milled powder.

Abstract translation: 提供了一种用于增加阀金属颗粒的表面积的方法，因为其由此提供的改进的阀金属颗粒。 该方法包括对具有阀金属粉末和介质的平均直径为至少0.01cm至不大于0.3175cm的介质对轧制设备进行充电。 然后将阀金属粉末以每个介质颗粒的平均动能不超过3,000 ergs进行研磨以获得研磨的粉末。

公开(公告)号：US09266071B2

公开(公告)日：2016-02-23

申请号：US13389618

申请日：2011-05-31

Applicant: Kazuhiro Yamamura ,  Masahiro Tobise

Inventor： Kazuhiro Yamamura ,  Masahiro Tobise

IPC: C22C27/02 ,  B01D71/02 ,  B01D67/00 ,  C22F1/00 ,  C22F1/16 ,  C22F1/18 ,  C01B3/50

CPC classification number: B01D71/022 ,  B01D67/0074 ,  B01D2323/12 ,  B01D2325/04 ,  C01B3/503 ,  C01B3/505 ,  C22C27/02 ,  C22F1/00 ,  C22F1/16 ,  C22F1/18

Abstract: Disclosed is a hydrogen separation alloy which is adoptable to a product having a large surface area of a side where hydrogen permeates and which has such a metallographic structure as to improve hydrogen permeability and to improve hydrogen-embrittlement resistance. The hydrogen separation alloy used herein is represented by the compositional formula: Nb100−(α+β)M1αM2β where M1 is at least one element selected from the group consisting of Ti, Zr and Hf; M2 is at least one element selected from the group consisting of Ni, Co, Cr, Fe, Cu and Zn; 10≦α≦60, 10≦β≦50, and α+β≦80. The alloy contains inevitable impurities. And the alloy includes two phases, i.e., an Nb-M1 phase serving as a hydrogen-permeable phase, and a M2-M1 phase serving as a hydrogen-embrittlement-resistant phase. The hydrogen-permeable phase and the hydrogen-embrittlement-resistant phase have an elongated structure resulting from rolling. The hydrogen-permeable phase occupies 35% to 70% of an arbitrary 10 μm×10 μm region in a 50 μm×50 μm observation plane of a cross section of the alloy under an electron microscopic observation, the cross section is taken in a direction of thickness reduced by the rolling and in a direction of rolling and flattening.

Abstract translation: 公开了一种氢分离合金，其可以用于氢渗透的一侧的大表面积的产品，并且具有提高氢渗透性和提高耐氢脆性的金相组织。 本文使用的氢分离合金由组成式表示：Nb100-（α+＆bgr;）M1αM2＆bgr; 其中M1是选自Ti，Zr和Hf中的至少一种元素; M2是选自Ni，Co，Cr，Fe，Cu和Zn中的至少一种元素; 10＆nlE;α＆nlE; 60,10和nlE;＆bgr;＆nlE; 50和α+＆bgr;＆nlE; 80。 该合金含有不可避免的杂质。 该合金包括两相，即用作氢可渗透相的Nb-M1相和用作耐氢脆相的M2-M1相。 氢渗透相和耐氢脆相具有由轧制产生的细长结构。 在电子显微镜观察的合金的截面的50μm×50μm的观察平面中，氢渗透相占据任意10μm×10μm的任意的10μm×10μm的35％〜70％，横截面为 的厚度通过轧制和轧制和扁平化的方向减小。

公开(公告)号：US20150368754A1

公开(公告)日：2015-12-24

申请号：US14834493

申请日：2015-08-25

Applicant: Paul R. Aimone ,  Prabhat Kumar

Inventor： Paul R. Aimone ,  Prabhat Kumar

IPC: C22B34/24 ,  C22B9/20 ,  C22C27/02 ,  C22B9/22

CPC classification number: C22B34/24 ,  C22B9/20 ,  C22B9/226 ,  C22B9/228 ,  C22C27/02

Abstract: A niobium or niobium alloy which contains pure or substantially pure niobium and at least one metal element selected from the group consisting of Ru, Rh, Pd, Os, Ir, Pt, Mo, W and Re to form a niobium alloy that is resistant to aqueous corrosion. The invention also relates to the process of preparing the niobium alloy.

Abstract translation: 一种铌或铌合金，其含有纯的或基本上纯的铌和至少一种选自Ru，Rh，Pd，Os，Ir，Pt，Mo，W和Re的金属元素，以形成铌合金， 含水腐蚀。 本发明还涉及制备铌合金的方法。