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    Bright and durable field emission source derived from refractory taylor cones
    11.
    发明授权
    Bright and durable field emission source derived from refractory taylor cones 有权
    源自耐火泰勒锥的明亮耐用的场致发射源

    公开(公告)号：US09524848B2

    公开(公告)日：2016-12-20

    申请号：US14536555

    申请日：2014-11-07

    申请人： Gregory Hirsch

    发明人： Gregory Hirsch

    IPC分类号： G21K5/02 ,  H01J37/073 ,  H01J37/08 ,  H01J1/304 ,  H01J9/02

    CPC分类号： H01J37/073 ,  H01J1/304 ,  H01J1/3044 ,  H01J9/025 ,  H01J37/08 ,  H01J2201/30411 ,  H01J2237/06341 ,  H01J2237/0805

    摘要： A method of producing field emitters having improved brightness and durability relying on the creation of a liquid Taylor cone from electrically conductive materials having high melting points. The method calls for melting the end of a wire substrate with a focused laser beam, while imposing a high positive potential on the material. The resulting molten Taylor cone is subsequently rapidly quenched by cessation of the laser power. Rapid quenching is facilitated in large part by radiative cooling, resulting in structures having characteristics closely matching that of the original liquid Taylor cone. Frozen Taylor cones thus obtained yield desirable tip end forms for field emission sources in electron beam applications. Regeneration of the frozen Taylor cones in-situ is readily accomplished by repeating the initial formation procedures. The high temperature liquid Taylor cones can also be employed as bright ion sources with chemical elements previously considered impractical to implement.

    摘要翻译： 一种制造具有改善的亮度和耐久性的场致发射体的方法，其依赖于具有高熔点的导电材料产生液体泰勒锥。 该方法要求用聚焦激光束熔化线基底的端部，同时在材料上施加高的正电位。 随后通过停止激光功率使所得的熔融泰勒锥快速淬火。 在很大程度上通过辐射冷却促进快速淬火，导致具有与原始液体泰勒锥的特征密切相似的特征的结构。 因此获得的冷冻泰勒锥在电子束应用中产生用于场发射源的期望的尖端形式。 通过重复初始形成程序容易地实现冷冻泰勒锥的原位再生。 高温液体泰勒锥也可用作具有以前认为不实际实施的化学元素的明亮离子源。

    Forming Nanotubes
    13.
    发明申请
    Forming Nanotubes 有权
    形成纳米管

    公开(公告)号：US20160217962A1

    公开(公告)日：2016-07-28

    申请号：US14607533

    申请日：2015-01-28

    申请人： Eloret Corporation

    发明人： Michael Mikio Oye

    IPC分类号： H01J9/02 ,  H01J1/304

    CPC分类号： H01J9/025 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01J1/304 ,  H01J1/3042 ,  H01J2201/30469 ,  Y10S977/843 ,  Y10S977/939

    摘要： A method of forming nanotubes may comprise applying a photoresist to a metal substrate, selectively exposing a first portion of the photoresist to electromagnetic radiation while not exposing a second portion to the electromagnetic radiation, removing the second portion of the photoresist from the metal substrate exposing a first portion of the metal substrate, exposing the first portion of the metal substrate to an etchant removing the first portion of the photoresist exposing a second portion of the metal substrate, and growing carbon nanotubes on the second portion of the metal substrate.

    摘要翻译： 形成纳米管的方法可以包括将光致抗蚀剂施加到金属基底上，将光致抗蚀剂的第一部分选择性地暴露于电磁辐射，同时不将第二部分暴露于电磁辐射，从金属基底去除第二部分光致抗蚀剂， 金属基板的第一部分，将金属基板的第一部分暴露于蚀刻剂，去除暴露金属基板的第二部分的光致抗蚀剂的第一部分，以及在金属基板的第二部分上生长碳纳米管。

    Field electron emission film, field electron emission device, light emission device, and method for producing them
    15.
    发明授权
    Field electron emission film, field electron emission device, light emission device, and method for producing them 有权
    场电子发射膜，场电子发射装置，发光装置及其制造方法

    公开(公告)号：US09324556B2

    公开(公告)日：2016-04-26

    申请号：US14424074

    申请日：2013-08-12

    申请人： TOHOKU UNIVERSITY ,  DOWA HOLDINGS CO., LTD.

    发明人： Norihiro Shimoi ,  Kazuyuki Tohji ,  Yasumitsu Tanaka ,  Hiroyuki Kai

    IPC分类号： H01J63/06 ,  H01J1/304 ,  H01J9/02 ,  H01J31/12 ,  H01J63/02

    CPC分类号： H01J63/06 ,  H01J1/304 ,  H01J9/025 ,  H01J31/127 ,  H01J63/02 ,  H01J2201/30469 ,  H01J2329/0455 ,  Y10T428/24479 ,  Y10T428/24612

    摘要： A field electron emission film that is capable of being operated with low electric power and enhancing the uniformity in luminance within the light emission surface contains from 60 to 99.9% by mass of tin-doped indium oxide and from 0.1 to 20% by mass of carbon nanotubes. The film has a structure wherein grooves having a width in a range of from 0.1 to 50 mm are formed in a total extension of 2 mm or more per 1 mm2 on a surface of the film, and carbon nanotubes are exposed on a wall surface of the grooves. After forming an ITO film containing carbon nanotubes on a substrate, grooves are formed on a surface of the ITO film, and the end portions of the carbon nanotubes exposed to the wall surface of the grooves are designated as an emitter.

    摘要翻译： 能够以低功率运转并提高发光面内的亮度均匀性的场致电子发射膜含有锡掺杂氧化铟60〜99.9质量％，碳含量0.1〜20质量％ 纳米管 该膜具有这样的结构，其中在膜的表面上形成宽度在0.1至50mm范围内的沟槽以2mm / mm 2以上的总延伸面形成，并且碳纳米管暴露在膜的表面上 凹槽。 在基板上形成含有碳纳米管的ITO膜之后，在ITO膜的表面上形成槽，将暴露于槽壁表面的碳纳米管的端部指定为发光体。

    Electron emission device and reflex klystron with the same
    16.
    发明授权
    Electron emission device and reflex klystron with the same 有权
    电子发射装置和反射速调管相同

    公开(公告)号：US09305738B2

    公开(公告)日：2016-04-05

    申请号：US14749583

    申请日：2015-06-24

    申请人： Tsinghua University ,  HON HAI PRECISION INDUSTRY CO., LTD.

    发明人： Peng Liu ,  Pi-Jin Chen ,  Duan-Liang Zhou ,  Chun-Hai Zhang ,  Shou-Shan Fan

    IPC分类号： H01J1/62 ,  H01J25/22 ,  H01J23/08

    CPC分类号： H01J25/22 ,  H01J1/304 ,  H01J3/021 ,  H01J23/04 ,  H01J23/06 ,  H01J2201/30469

    摘要： An electron emission device includes an anode, a cathode, an electron emitter structure, and an electron extraction electrode. The cathode is spaced from the anode. The electron emitter structure is electrically connected to the cathode. The electron extraction electrode is insulated from the cathode. The electron extraction electrode defines a through hole surrounded by a sidewall, and the electron emitter structure faces to the sidewall. The electron emitter structure includes a number of electron emitters extending toward the sidewall, each of the number of electron emitters includes an electron emission terminal, a first distance between each electron emission terminal and the sidewall is substantially the same, a second distance between the electron emission terminal and the anode is greater than or equal to 10 micrometers and smaller than or equal to 200 micrometers, and a pressure in the electron emission device is smaller than or equal to 100 Pascal.

    摘要翻译： 电子发射装置包括阳极，阴极，电子发射体结构和电子提取电极。 阴极与阳极间隔开。 电子发射体结构与阴极电连接。 电子提取电极与阴极绝缘。 电子提取电极限定由侧壁包围的通孔，并且电子发射体结构面向侧壁。 电子发射器结构包括朝向侧壁延伸的多个电子发射体，多个电子发射器中的每一个包括电子发射端子，每个电子发射端子和侧壁之间的第一距离基本相同，电子之间的第二距离 发射端子和阳极大于或等于10微米且小于或等于200微米，并且电子发射器件中的压力小于或等于100帕斯卡。

    ELECTRON EMISSION DEVICE AND REFLEX KLYSTRON WITH THE SAME
    18.
    发明申请
    ELECTRON EMISSION DEVICE AND REFLEX KLYSTRON WITH THE SAME 有权
    电子发射装置和反射镜

    公开(公告)号：US20150380199A1

    公开(公告)日：2015-12-31

    申请号：US14749583

    申请日：2015-06-24

    申请人： TSINGHUA UNIVERSITY ,  HON HAI PRECISION INDUSTRY CO., LTD.

    发明人： PENG LIU ,  PI-JIN CHEN ,  DUAN-LIANG ZHOU ,  CHUN-HAI ZHANG ,  SHOU-SHAN FAN

    IPC分类号： H01J25/22 ,  H01J23/08

    CPC分类号： H01J25/22 ,  H01J1/304 ,  H01J3/021 ,  H01J23/04 ,  H01J23/06 ,  H01J2201/30469

    摘要： An electron emission device includes an anode, a cathode, an electron emitter structure, and an electron extraction electrode. The cathode is spaced from the anode. The electron emitter structure is electrically connected to the cathode. The electron extraction electrode is insulated from the cathode. The electron extraction electrode defines a through hole surrounded by a sidewall, and the electron emitter structure faces to the sidewall. The electron emitter structure includes a number of electron emitters extending toward the sidewall, each of the number of electron emitters includes an electron emission terminal, a first distance between each electron emission terminal and the sidewall is substantially the same, a second distance between the electron emission terminal and the anode is greater than or equal to 10 micrometers and smaller than or equal to 200 micrometers, and a pressure in the electron emission device is smaller than or equal to 100 Pascal.

    摘要翻译： 电子发射装置包括阳极，阴极，电子发射体结构和电子提取电极。 阴极与阳极间隔开。 电子发射体结构与阴极电连接。 电子提取电极与阴极绝缘。 电子提取电极限定由侧壁包围的通孔，并且电子发射体结构面向侧壁。 电子发射器结构包括朝向侧壁延伸的多个电子发射体，多个电子发射器中的每一个包括电子发射端子，每个电子发射端子和侧壁之间的第一距离基本相同，电子之间的第二距离 发射端子和阳极大于或等于10微米且小于或等于200微米，并且电子发射器件中的压力小于或等于100帕斯卡。

    Self-aligned gated emitter tip arrays
    19.
    发明授权
    Self-aligned gated emitter tip arrays 有权
    自对准栅极发射极尖阵列

    公开(公告)号：US09196447B2

    公开(公告)日：2015-11-24

    申请号：US14067668

    申请日：2013-10-30

    申请人： Massachusetts Institutes of Technology

    发明人： Arash Akhavan Fomani ,  Luis Fernando Velasquez-Garcia ,  Akintunde Ibitayo Akinwande

    IPC分类号： H01J9/02 ,  H01J1/304 ,  H01L21/00

    CPC分类号： H01J9/025 ,  H01J1/304 ,  H01J2201/30411 ,  H01L21/00 ,  H01T19/04 ,  H01T23/00

    摘要： Methods for fabrication of self-aligned gated tip arrays are described. The methods are performed on a multilayer structure that includes a substrate, an intermediate layer that includes a dielectric material disposed over at least a portion of the substrate, and at least one gate electrode layer disposed over at least a portion of the intermediate layer. The method includes forming a via through at least a portion of the at least one gate electrode layer. The via through the at least one gate electrode layer defines a gate aperture. The method also includes etching at least a portion of the intermediate layer proximate to the gate aperture such that an emitter structure at least partially surrounded by a trench is formed in the multilayer structure.

    摘要翻译： 描述了自对准浇口尖端阵列的制造方法。 该方法在包括衬底，包括设置在衬底的至少一部分上的电介质材料的中间层以及设置在中间层的至少一部分上的至少一个栅电极层的多层结构上进行。 该方法包括通过至少一个栅极电极层的至少一部分形成通孔。 通过至少一个栅极电极层的通孔限定栅极孔径。 该方法还包括蚀刻靠近栅极孔的中间层的至少一部分，使得在多层结构中形成至少部分被沟槽包围的发射极结构。