公开(公告)号：US20060220514A1

公开(公告)日：2006-10-05

申请号：US10555296

申请日：2004-09-29

Applicant: Natsuo Tatsumi ,  Akihiko Namba ,  Yoshiki Nishibayashi ,  Takahiro Imai

Inventor： Natsuo Tatsumi ,  Akihiko Namba ,  Yoshiki Nishibayashi ,  Takahiro Imai

IPC: H01J9/00

CPC classification number: H01J1/3044 ,  H01J1/304 ,  H01J9/025 ,  H01J29/04 ,  H01J2201/30457

Abstract: A method for production includes a step for forming concaved molds on a surface of a substrate and a step for growing a diamond heteroepitaxially on the substrate in an atmosphere containing a doping material. The crystal structure of the slope of the concaved molds of the substrate can have the cubic system crystal orientation (111), and the doping material is phosphorous. Further, the substrate is Si, and the slope of the molds can be the Si (111) face. The diamond electron emission device contains projection parts on the surface thereof, where a slope of the projection parts 1 contains a diamond (111) face, and flat parts 2, which are not the projection parts, contain face orientations other than (100) face or (110) face and grain boundaries.

Abstract translation: 一种生产方法包括在衬底的表面上形成凹模的步骤以及在含有掺杂材料的气氛中在衬底上生长异质外延的金刚石的步骤。 衬底的凹模的斜面的晶体结构可以具有立方体系晶体取向（111），并且掺杂材料是磷。 此外，衬底是Si，并且模具的斜率可以是Si（111）面。 金刚石电子发射装置在其表面上包含投影部分，其中突出部分1的斜面包含金刚石（111）面，并且不是突出部分的平坦部分2包含除（100）面之外的面取向 或（110）面和晶界。

公开(公告)号：US06876136B2

公开(公告)日：2005-04-05

申请号：US10660633

申请日：2003-09-12

Applicant: Yoshiki Nishibayashi ,  Yutaka Ando ,  Takahiro Imai

Inventor： Yoshiki Nishibayashi ,  Yutaka Ando ,  Takahiro Imai

IPC: H01J1/30 ,  H01J1/304 ,  H01J19/24

CPC classification number: H01J1/3044 ,  H01J2201/30457

Abstract: An electron emission element according to the present invention comprises a substrate, and a plurality of protrusions composed of diamond and protruding from the substrate. Each protrusion includes a columnar portion, the side face of which forms an inclination of approximately 90° relative to the surface of the substrate, and a tip portion, which is located on the columnar portion having a spicular end. A conductive layer is formed on the upper part of each columnar portion, and a cathode electrode film, which is electrically connected to the conductive layer, is formed on the side face of the columnar portion.

Abstract translation: 根据本发明的电子发射元件包括基底和由金刚石组成并从基底突出的多个突起。 每个突起包括柱状部分，其侧面相对于基底的表面形成约90°的倾斜，并且位于柱状部分上的尖端部分具有相关端。 在每个柱状部分的上部形成导电层，并且在柱状部分的侧面上形成与导电层电连接的阴极电极膜。

公开(公告)号：US20030132393A1

公开(公告)日：2003-07-17

申请号：US10334330

申请日：2002-12-31

Inventor： Steven Dimitrijevic ,  James C. Withers ,  Raouf O. Loutfy

IPC: H01J027/00

CPC classification number: B82Y10/00 ,  H01J1/304 ,  H01J1/3044 ,  H01J9/025 ,  H01J2201/30457 ,  H01J2201/30469 ,  Y10S977/745 ,  Y10S977/939

Abstract: The present invention is directed to a nanotube coated with diamond or diamond-like carbon, a field emitter cathode comprising same, and a field emitter comprising the cathode. It is also directed to a method of preventing the evaporation of carbon from a field emitter comprising a cathode comprised of nanotubes by coating the nanotube with diamond or diamond-like carbon. In another aspect, the present invention is directed to a method of preventing the evaporation of carbon from an electron field emitter comprising a cathode comprised of nanotubes, which method comprises coating the nanotubes with diamond or diamond-like carbon.

Abstract translation: 本发明涉及涂覆有金刚石或类金刚石碳的纳米管，包含该金刚石或类金刚石碳的场致发射极阴极以及包括阴极的场致发射体。 还涉及一种通过用金刚石或类金刚石碳涂覆纳米管来防止来自包括由纳米管组成的阴极的场发射体蒸发碳的方法。 另一方面，本发明涉及一种防止碳从包含由纳米管构成的阴极的电子发射体蒸发的方法，该方法包括用金刚石或类金刚石碳涂覆纳米管。

公开(公告)号：US06554673B2

公开(公告)日：2003-04-29

申请号：US09917663

申请日：2001-07-31

Applicant: Pehr Pehrsson ,  James Butler

Inventor： Pehr Pehrsson ,  James Butler

IPC: H01J904

CPC classification number: B82Y10/00 ,  H01J1/3044 ,  H01J1/312 ,  H01J9/022 ,  H01J9/025 ,  H01J2201/30446 ,  H01J2201/30457

Abstract: A method for fabricating an electron emitter. This emitter structure may be used to form individual emitters or arrays of emitters. The method is comprised of implanting energetic ions into a diamond lattice to form cones or other continuous regions of damaged diamond. These regions are more electrically conducting than the surrounding diamond lattice, and have locally sharp tips at or near the point of entry of the ion into the diamond. The tips may then also be additionally coated with a layer of a wide band-gap semiconductor. An electrically conducting material may also be placed in proximity to the tips to generate an electric field sufficient to extract electrons from the conducting tips into either the region above the surface, or into the wide band-gap semiconductor layer in contact with the tips. Electrical contact is made to the electrically conducting damage tracks and the electrical circuit may be completed with an electrically conducting material on the surface of the wide band-gap semiconductor or diamond, or in the ambient above the surface of the emitter. The surface of the wideband gap semiconductor or diamond may be chemically modified to enhance the emission of electrons from the surface.

Abstract translation: 一种制造电子发射器的方法。 该发射器结构可以用于形成发射器的单独发射器或阵列。 该方法包括将能量离子注入到金刚石晶格中以形成损坏金刚石的锥体或其它连续区域。 这些区域比周围的金刚石晶格更具导电性，并且在离子进入金刚石的位置处或附近具有局部尖锐的尖端。 然后可以另外涂覆一层宽带隙半导体的尖端。 还可以将导电材料放置在靠近尖端处以产生足以将电子从导电尖端引入到表面上方的区域中的电场，或者与尖端接触的宽带隙半导体层中。 对导电损伤轨道进行电接触，并且电路可以在宽带隙半导体或金刚石的表面上或在发射器表面上的环境中的导电材料完成。 宽带隙半导体或金刚石的表面可以被化学修饰以增强从表面发射电子。

公开(公告)号：US06479939B1

公开(公告)日：2002-11-12

申请号：US09453304

申请日：1999-12-02

Applicant: Zvi Yaniv ,  Richard Lee Fink ,  Zhidan Li Tolt

Inventor： Zvi Yaniv ,  Richard Lee Fink ,  Zhidan Li Tolt

IPC: G09G310

CPC classification number: H01J1/304 ,  B82Y10/00 ,  B82Y15/00 ,  H01J2201/30457

Abstract: A carbon film having an area of insulating material surrounded by an area of conducing material, and an area of material between the area of insulating material and the area of conducting material having a graded dielectric constant which varies from high to low from the area of insulating material to the area of conducting material.

Abstract translation: 具有由导电材料区域包围的绝缘材料区域的碳膜，以及绝缘材料区域和导电材料区域之间的材料区域，其具有从绝缘区域的高低变化的梯度介电常数 材料到导电材料区域。

公开(公告)号：US06465954B2

公开(公告)日：2002-10-15

申请号：US09748437

申请日：2000-12-27

Applicant: Graham Steven Kerslick ,  Victor Ivan Chornenky

Inventor： Graham Steven Kerslick ,  Victor Ivan Chornenky

IPC: H01J1724

CPC classification number: H01J35/065 ,  H01J1/304 ,  H01J7/18 ,  H01J35/20 ,  H01J2201/30457 ,  H01J2235/205

Abstract: A cathode structure comprising a getter material provided with a diamond film. The getter material may include zirconium, vanadium and iron. Cathode structures may have a substantially rounded configuration including a substantially straight portion. Other cathode structures may have a substantially flat portion, with the diamond film covering essentially the entire flat surface. Methods of manufacturing cathode structures may include conditioning the cathode structure by applying a voltage.

Abstract translation: 一种阴极结构，包括设置有金刚石膜的吸气材料。 吸气材料可以包括锆，钒和铁。 阴极结构可以具有基本上圆形的构造，其包括基本上直的部分。 其他阴极结构可以具有基本上平坦的部分，其中金刚石膜基本上覆盖整个平坦表面。 制造阴极结构的方法可以包括通过施加电压来调节阴极结构。

公开(公告)号：US20020125827A1

公开(公告)日：2002-09-12

申请号：US09802585

申请日：2001-03-08

Applicant: GENVAC AeroSpace Corporation

Inventor： Gerald T. Mearini ,  Laszlo A. Takacs

IPC: H01J023/06

CPC classification number: H01J23/05 ,  H01J2201/30457 ,  H01J2201/32

Abstract: A radio frequency magnetron device for generating radio frequency power includes a cathode at least partially formed from a diamond material. An anode is disposed concentrically around the cathode. An electron field is provided radially between the anode and the cathode. First and second oppositely charged pole pieces are operatively connected to the cathode for producing a magnetic field in a direction perpendicular to the electric field. A filament is provided within the electron tube which when heated produces primary electrons. Alternatively, a voltage is applied to the anode which causes primary electrons to emit from the diamond coated cathode. A portion of the primary electrons travel in a circular path and induce radio frequency power. Another portion of the primary electrons spiral back and collide with the cathode causing the emission of secondary electrons. The secondary electron emission sustains operation of the magnetron device once the device has been started.

Abstract translation: 用于产生射频功率的射频磁控管装置包括至少部分由金刚石材料形成的阴极。 阳极围绕阴极同心地设置。 在阳极和阴极之间径向设置电子场。 第一和第二相对带电的极片可操作地连接到阴极，以在垂直于电场的方向上产生磁场。 在电子管内提供一根灯丝，当加热时产生一次电子。 或者，向阳极施加电压，其使一次电子从金刚石涂覆的阴极发射。 一部分一次电子以圆形路径行进并且感应射频功率。 一次电子的另一部分螺旋回来并与阴极碰撞引起二次电子的发射。 一旦装置启动，二次电子发射就能维持磁控管装置的操作。

公开(公告)号：US06379568B1

公开(公告)日：2002-04-30

申请号：US09570958

申请日：2000-05-15

Applicant: Young-Joon Baik ,  Joo-Yong Lee ,  Dong-Ryul Jeon

Inventor： Young-Joon Baik ,  Joo-Yong Lee ,  Dong-Ryul Jeon

IPC: H01J1900

CPC classification number: H01J9/025 ,  H01J2201/30457

Abstract: A diamond field emitter and a fabrication method thereof, in which a pretreatment is performed on a surface of an Si substrate in order that diamond nuclei are uniformly formed on the Si substrate during a diamond deposition, an oxide film such as an SiO2 film is deposited on the pretreated surface of the Si substrate and removed after an etching process so that diamond powder can be selectively remained during the etching process, thus the effect of the surface pretreatment of the Si substrate remains in the selected portion during the etching process, and it is also possible to uniformly deposit the diamond in said portion. According to the present invention, the diamond field emitter having excellent and uniform field emission characteristic can be manufactured because the field emission is easily achieved at a tip shaped field emission section, and, moreover, the diamond placed on an upper end portion of the tip increases electron emission effect.

Abstract translation: 一种金刚石场发射器及其制造方法，其中在金刚石沉积中在Si衬底的表面上进行预处理以使金刚石核均匀地形成在Si衬底上，沉积诸如SiO 2膜的氧化物膜 在Si衬底的预处理表面上，并且在蚀刻工艺之后去除，使得在蚀刻工艺期间可以选择性地保留金刚石粉末，因此在蚀刻工艺期间，Si衬底的表面预处理的效果保留在所选择的部分中，并且 也可以将金刚石均匀地沉积在所述部分中。 根据本发明，可以制造具有优异均匀的场发射特性的金刚石场发射器，因为在尖端形状的场致发射部分容易实现场致发射，此外，金刚石放置在尖端的上端部 增加电子发射效应。

公开(公告)号：US06284556B1

公开(公告)日：2001-09-04

申请号：US09308271

申请日：1999-07-08

Applicant: Wang Nang Wang ,  Neil Anthony Fox

Inventor： Wang Nang Wang ,  Neil Anthony Fox

IPC: H01L2100

CPC classification number: C23C16/27 ,  B24D18/00 ,  B82Y10/00 ,  C01B32/25 ,  C09K3/1409 ,  C23C16/278 ,  C23C16/44 ,  H01J1/304 ,  H01J9/025 ,  H01J31/123 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2201/3165

Abstract: A diamond grit surface is formed on a substrate (1) having a metal surface (2), such as nickel, by applying a paste (4) of low-grade diamond grit in a binder to the surface. After driving off the binder, the diamond coated surface is placed in a reactor chamber (10) having a microwave plasma reactor (11) and connected to a hydrogen gas pump (12). The substrate (1) is heated in the hydrogen atmosphere at a reduced pressure. The metal surface (2) acts as a catalyst in the presence of the hydrogen plasma to cause regrowth of the diamond (6), giving an improved size, shape and adhesion. The method may be used to make diamond surfaces in electron emitter devices, circuit boards or abrasive devices.

Abstract translation: 在具有金属表面（2）如镍的基板（1）上，通过将粘合剂中的低等级金刚石砂粒的浆料（4）施加到表面上，形成金刚石砂粒表面。 在驱除粘合剂之后，将金刚石涂覆的表面放置在具有微波等离子体反应器（11）并连接到氢气泵（12）的反应器室（10）中。 基板（1）在氢气氛中减压加热。 金属表面（2）在氢等离子体的存在下起催化剂的作用，引起金刚石（6）的再生长，从而改善了尺寸，形状和粘附性。 该方法可用于在电子发射器件，电路板或研磨器件中制造金刚石表面。

公开(公告)号：US6040001A

公开(公告)日：2000-03-21

申请号：US136614

申请日：1998-08-20

Applicant: Mun Cheol Paek ,  Sung Woo Choi ,  Kee Soo Nam

Inventor： Mun Cheol Paek ,  Sung Woo Choi ,  Kee Soo Nam

IPC: H01L29/68 ,  H01J9/02 ,  H01J21/10 ,  B05D5/12 ,  C23C16/00

CPC classification number: H01J21/105 ,  H01J9/025 ,  H01J2201/30457

Abstract: This invention discloses a method of manufacturing a diamond vacuum device, and more particularly a method of manufacturing a diamond vacuum device which uses a diamond thin film as an electron emitter by electric field. The present invention presents a method of manufacturing a vacuum device for use in high speed, high voltage, using diamond having a negative electron affinity, which can emit electrons even at a low voltage and is also resistant to chemical variations.

Abstract translation: 本发明公开了一种制造金刚石真空装置的方法，特别是一种制造金刚石真空装置的方法，金刚石真空装置通过电场使用金刚石薄膜作为电子发射体。 本发明提供了一种使用具有负电子亲和力的金刚石制造用于高速，高电压的真空装置的方法，其即使在低电压下也可以发射电子，并且也耐化学变化。