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    Method and apparatus for etching surfaces with atomic fluorine
    12.
    发明授权
    Method and apparatus for etching surfaces with atomic fluorine 失效
    用原子氟蚀刻表面的方法和装置

    公开(公告)号：US5597495A

    公开(公告)日：1997-01-28

    申请号：US335564

    申请日：1994-11-07

    Applicant: Mark Keil ,  Joel H. Young ,  Kyle Copeland

    Inventor： Mark Keil ,  Joel H. Young ,  Kyle Copeland

    IPC: H01J27/20 ,  H05H3/02 ,  B44C1/22

    CPC classification number: H05H3/02 ,  H01J27/20 ,  H01J2237/06 ,  H01J2237/3151

    Abstract: A method and apparatus for generating a molecular or atomic fluorine jet or beam under vacuum for etching surfaces. The apparatus uses a hollow crystalline tube preferably fabricated from a crystal of a Group II fluoride such as magnesium fluoride. A terminal portion of the tube is heated to over 1000.degree. C. and a mixture of fluorine gas and an inert carrier gas is induced under pressure into the tube. An atomic fluorine jet is emitted from the opposite end of the tube. The jet can be collimated into a beam and can be directed at masked surfaces for selective etching of the surface. The atomic fluorine source has a very high intensity resulting in rapid etching of materials and as a beam is capable of highly anisotropic etching. The jet may be primarily molecular fluorine if the tube is heated to a lower temperature.

    Abstract translation: 一种用于在真空下产生用于蚀刻表面的分子或原子氟射流或光束的方法和装置。 该装置使用优选由II类氟化物的结晶如氟化镁制成的中空晶体管。 将管的端部加热至超过1000℃，并在压力下将氟气和惰性载气的混合物引入管中。 原子氟射流从管的相对端发射。 射流可以被准直成束，并且可以被引导到掩模表面以选择性地蚀刻表面。 原子氟源具有非常高的强度，导致材料的快速蚀刻，并且由于光束能够进行高度各向异性蚀刻。 如果管被加热到更低的温度，射流可以主要是分子氟。

    POWER SUPPLY SYSTEM, PLASMA ETCHING APPARATUS, AND PLASMA ETCHING METHOD
    15.
    发明申请
    POWER SUPPLY SYSTEM, PLASMA ETCHING APPARATUS, AND PLASMA ETCHING METHOD 有权
    电源系统，等离子体蚀刻装置和等离子体蚀刻方法

    公开(公告)号：US20150000842A1

    公开(公告)日：2015-01-01

    申请号：US14376697

    申请日：2013-02-19

    Applicant: Tokyo Electron Limited

    Inventor： Taichi Hirano ,  Fumitoshi Kumagai

    IPC: H01J37/32 ,  G05B11/01

    CPC classification number: H01J37/32045 ,  G05B11/01 ,  H01J37/32027 ,  H01J37/32091 ,  H01J37/32935 ,  H01J2237/06 ,  H01J2237/3343 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76802 ,  H05H1/46 ,  H05H2001/4682 ,  Y10T307/367

    Abstract: A power supply system 90 includes high frequency power supplies 92 and 93 that supply a high frequency power for plasma generation; a DC power supply 91 that supplies a DC voltage to be applied to an electrode; and control unit 94 that controls the high frequency power supplies 92 and 93 and the DC power supply 91 including a first DC power supply unit 101 that supplies a first negative DC voltage V1, a second DC power supply unit 102 that supplies a second negative DC voltage V2 having a higher absolute value than the first negative DC voltage V1, and a selecting circuit 103 that selectively connects the first DC power supply unit 101 and the second DC power supply unit 102 to the electrode; and a discharging circuit 104 connected with a node 109 between the first DC power supply unit 101 and the selecting circuit 103.

    Abstract translation: 电源系统90包括为等离子体产生提供高频电力的高频电源92和93; 提供要施加到电极的DC电压的DC电源91; 以及控制单元94，其控制高频电源92和93以及包括提供第一负DC电压V1的第一DC电源单元101的DC电源91，提供第二负DC的第二DC电源单元102 具有比第一负DC电压V1高的绝对值的电压V2以及选择电路103，其选择性地将第一DC电源单元101和第二DC电源单元102连接到电极; 以及与第一直流电源单元101和选择电路103之间的节点109连接的放电电路104。

    Method and apparatus for producing large diameter superalloy ingots
    16.
    发明授权
    Method and apparatus for producing large diameter superalloy ingots 有权
    用于生产大直径超合金锭的方法和装置

    公开(公告)号：US07803211B2

    公开(公告)日：2010-09-28

    申请号：US12053238

    申请日：2008-03-21

    Applicant: Robin M. Forbes Jones

    Inventor： Robin M. Forbes Jones

    IPC: B22F9/14

    CPC classification number: C22B9/04 ,  B22F9/14 ,  B22F2009/0836 ,  B22F2009/0848 ,  B22F2009/0888 ,  B22F2009/0896 ,  B22F2998/10 ,  B32B15/01 ,  C22B9/226 ,  C22B9/228 ,  C22C1/0433 ,  C22C19/055 ,  C22C19/056 ,  C23C4/06 ,  C23C4/123 ,  C23C4/137 ,  H01J37/305 ,  H01J2237/06 ,  H01J2237/063 ,  H01J2237/15 ,  H01J2237/16

    Abstract: Methods and apparatus for producing large diameter superalloy ingots are disclosed. A material comprising at least one of a metal and a metallic alloy is introduced into a pressure-regulated chamber in a melting assembly. The material is subjected to a wide-area electron field within the pressure-regulated chamber to heat the material to a temperature above the melting temperature of the material to form a molten alloy. At least one stream of molten alloy from the pressure-regulated chamber is provided from the melting assembly and is fed into an atomizing assembly, where particles of the molten alloy are generated by impinging electrons on the molten alloy to atomize the molten alloy. At least one of an electrostatic field and an electromagnetic field are produced to influence the particles of the molten alloy. The particles of the molten alloy are deposited onto a collector in a spray forming operation to form an alloy ingot.

    Abstract translation: 公开了用于生产大直径超合金锭的方法和装置。 将包括金属和金属合金中的至少一种的材料引入熔融组件中的压力调节室中。 该材料在压力调节室内经受广泛的电场，以将材料加热到高于材料的熔融温度的温度以形成熔融合金。 从熔融组件提供至少一个来自压力调节室的熔融合金流，并被送入雾化组件，其中熔融合金的颗粒通过在熔融合金上撞击电子而雾化熔融合金而产生。 产生静电场和电磁场中的至少一个以影响熔融合金的颗粒。 熔融合金的颗粒在喷射成型操作中沉积到集热器上以形成合金锭。

    METHOD AND APPARATUS FOR PRODUCING LARGE DIAMETER SUPERALLOY INGOTS
    17.
    发明申请
    METHOD AND APPARATUS FOR PRODUCING LARGE DIAMETER SUPERALLOY INGOTS 有权
    用于生产大直径超级合金的方法和装置

    公开(公告)号：US20080179033A1

    公开(公告)日：2008-07-31

    申请号：US12053238

    申请日：2008-03-21

    Applicant: Robin M. Forbes Jones

    Inventor： Robin M. Forbes Jones

    IPC: B22D7/00 ,  B22D9/00 ,  B22D27/02

    CPC classification number: C22B9/04 ,  B22F9/14 ,  B22F2009/0836 ,  B22F2009/0848 ,  B22F2009/0888 ,  B22F2009/0896 ,  B22F2998/10 ,  B32B15/01 ,  C22B9/226 ,  C22B9/228 ,  C22C1/0433 ,  C22C19/055 ,  C22C19/056 ,  C23C4/06 ,  C23C4/123 ,  C23C4/137 ,  H01J37/305 ,  H01J2237/06 ,  H01J2237/063 ,  H01J2237/15 ,  H01J2237/16

    Abstract: Methods and apparatus for producing large diameter superalloy ingots are disclosed. A material comprising at least one of a metal and a metallic alloy is introduced into a pressure-regulated chamber in a melting assembly. The material is subjected to a wide-area electron field within the pressure-regulated chamber to heat the material to a temperature above the melting temperature of the material to form a molten alloy. At least one stream of molten alloy from the pressure-regulated chamber is provided from the melting assembly and is fed into an atomizing assembly, where particles of the molten alloy are generated by impinging electrons on the molten alloy to atomize the molten alloy. At least one of an electrostatic field and an electromagnetic field are produced to influence the particles of the molten alloy. The particles of the molten alloy are deposited onto a collector in a spray forming operation to form an alloy ingot.

    Abstract translation: 公开了用于生产大直径超合金锭的方法和装置。 将包括金属和金属合金中的至少一种的材料引入熔融组件中的压力调节室中。 该材料在压力调节室内经受广泛的电场，以将材料加热到高于材料的熔融温度的温度以形成熔融合金。 从熔融组件提供至少一个来自压力调节室的熔融合金流，并被送入雾化组件，其中熔融合金的颗粒通过在熔融合金上撞击电子而雾化熔融合金而产生。 产生静电场和电磁场中的至少一个以影响熔融合金的颗粒。 熔融合金的颗粒在喷射成型操作中沉积到集热器上以形成合金锭。

    Particle-optical systems and arrangements and particle-optical components for such systems and arrangements
    18.
    发明授权
    Particle-optical systems and arrangements and particle-optical components for such systems and arrangements 有权
    用于这种系统和布置的粒子 - 光学系统和布置以及粒子 - 光学部件

    公开(公告)号：US07244949B2

    公开(公告)日：2007-07-17

    申请号：US11366533

    申请日：2006-03-03

    Applicant: Rainer Knippelmeyer ,  Oliver Kienzle

    Inventor： Rainer Knippelmeyer ,  Oliver Kienzle

    IPC: G21K5/10 ,  G21K7/00 ,  H01J37/28

    CPC classification number: H01J37/04 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/09 ,  H01J37/10 ,  H01J37/14 ,  H01J37/153 ,  H01J37/28 ,  H01J37/3007 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/0453 ,  H01J2237/047 ,  H01J2237/04735 ,  H01J2237/04756 ,  H01J2237/06 ,  H01J2237/14 ,  H01J2237/2817 ,  H01J2237/31774

    Abstract: An electron-optical arrangement provides a primary beam path for a beam of primary electrons and a secondary beam path for secondary electrons. The electron-optical arrangement includes a magnet arrangement having first, second and third magnetic field regions. The first magnetic field region is traversed by the primary beam path and the secondary beam path. The second magnetic field region is arranged in the primary beam path upstream of the first magnetic field region and is not traversed by the secondary beam path. The first and second magnetic field regions deflect the primary beam path in substantially opposite directions. The third magnetic field region is arranged in the secondary beam path downstream of the first magnetic field region and is not traversed by the first beam path. The first and third magnetic field regions deflect the secondary beam path in a substantially same direction.

    Abstract translation: 电子 - 光学装置提供用于一次电子束的主光束路径和二次电子的次级光束路径。 电子 - 光学装置包括具有第一，第二和第三磁场区域的磁体装置。 第一磁场区域被主光束路径和次光束路径穿过。 第二磁场区域被布置在第一磁场区域的上游的主光束路径中，并且不被辅助光束路径穿过。 第一和第二磁场区域以基本上相反的方向偏转主光束路径。 第三磁场区域布置在第二磁场区域的下游的次级光束路径中，并且不被第一光束路径穿过。 第一和第三磁场区域以基本上相同的方向偏转次级光束路径。

    Charged particle beam apparatus
    20.
    发明授权
    Charged particle beam apparatus 有权
    带电粒子束装置

    公开(公告)号：US09105446B2

    公开(公告)日：2015-08-11

    申请号：US14376901

    申请日：2013-01-28

    Applicant: Hitachi High-Technologies Corporation

    Inventor： Yasushi Ebizuka ,  Seiichiro Kanno ,  Makoto Nishihara ,  Masashi Fujita

    IPC: H01J37/30 ,  H01J37/22 ,  H02N13/00 ,  H01J37/28 ,  H01J37/20

    CPC classification number: H01J37/226 ,  H01J37/026 ,  H01J37/20 ,  H01J37/28 ,  H01J2237/0047 ,  H01J2237/06 ,  H01J2237/2007 ,  H01J2237/2801 ,  H02N13/00

    Abstract: An object of the present invention is to provide a charged particle beam apparatus that effectively removes electrical charges from an electrostatic chuck.In order to achieve the above object, the charged particle beam apparatus of the present invention includes a sample chamber that maintains a space containing an electrostatic chuck mechanism (5) in a vacuum state; and in which the charged particle beam apparatus includes an ultraviolet light source (6) to irradiate ultraviolet light within the sample chamber, and a irradiation target member irradiated by the ultraviolet light; and the irradiation target member is placed perpendicular to the adsorption surface of the electrostatic chuck.

    Abstract translation: 本发明的目的是提供一种有效地从静电卡盘去除电荷的带电粒子束装置。 为了实现上述目的，本发明的带电粒子束装置包括在真空状态下保持包含静电卡盘机构（5）的空间的样本室; 并且其中带电粒子束装置包括用于照射样品室内的紫外光的紫外光源和照射由紫外光照射的照射目标构件; 并且照射目标构件垂直于静电吸盘的吸附表面放置。

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