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208 条记录 (耗时 0.024 秒)

    Apparatus and methods for processing a substrate
    11.
    发明授权
    Apparatus and methods for processing a substrate 有权
    用于处理衬底的装置和方法

    公开(公告)号：US08968485B2

    公开(公告)日：2015-03-03

    申请号：US13251064

    申请日：2011-09-30

    申请人： Arjun Mendiratta ,  Cheng-Yu Lin ,  David Mui

    发明人： Arjun Mendiratta ,  Cheng-Yu Lin ,  David Mui

    IPC分类号： B08B3/00 ,  B08B1/02 ,  B08B3/04 ,  H01L21/02 ,  H01L21/67

    CPC分类号： B08B1/02 ,  B08B3/04 ,  H01L21/02065 ,  H01L21/02074 ,  H01L21/6704 ,  H01L21/67051

    摘要： An apparatus for processing a substrate, comprising: a process chamber having a track; a carrier connected to the track; upper and lower proximity heads in the chamber and positioned along the path, the proximity heads having opposing faces that define a gap in which a meniscus of fluid is formed, the path being defined along the gap between the opposing faces; a first pre-wet dispenser and a second pre-wet dispenser disposed along side of the upper proximity head and directed toward the path; a drive for moving each of the pre-wet dispensers between a center position along the length of the upper proximity head and opposite outer positions near outer ends of the upper proximity head; and a pre-wet controller for causing the drive to move each of the first and second pre-wet dispensers based on a position of the carrier when moved under the first and second pre-wet dispensers.

    摘要翻译： 一种用于处理衬底的设备，包括：具有轨道的处理室; 连接到轨道的载体; 所述腔室中的上和下邻近头部沿所述路径定位，所述邻近头部具有限定形成有液体弯液面的间隙的相对面，所述路径沿着相对面之间的间隙限定; 第一预湿式分配器和第二预湿式分配器，其设置在上接近头部的侧面并且朝向路径; 驱动器，用于在沿着上邻近头部的长度的中心位置和靠近上接近头部的外端的相对的外部位置之间移动每个预湿式分配器; 以及预湿式控制器，用于当所述第一和第二预湿式分配器下移动时，使得所述驱动器基于所述载体的位置移动所述第一和第二预湿式分配器中的每一个。

    PRE-TREATMENT METHOD FOR METAL-OXIDE REDUCTION AND DEVICE FORMED
    12.
    发明申请
    PRE-TREATMENT METHOD FOR METAL-OXIDE REDUCTION AND DEVICE FORMED 审中-公开
    用于金属氧化物还原的预处理方法和形成的装置

    公开(公告)号：US20150001728A1

    公开(公告)日：2015-01-01

    申请号：US13927570

    申请日：2013-06-26

    申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

    发明人： Li CHEN ,  Jyh-Nan LIN ,  Chin-Feng SUN ,  Po-Hsiung LEU ,  Ding-I LIU

    IPC分类号： H01L21/768 ,  H01L23/48

    CPC分类号： H01L21/76826 ,  H01L21/02065 ,  H01L21/76829 ,  H01L21/76883

    摘要： A method of forming a semiconductor device, the method includes performing, in a first module, a remote plasma treatment on a wafer to remove an oxide layer from the wafer by a reduction reaction. The method further includes transferring the pre-treated wafer from the first module to a second module under a vacuum. The method further includes forming, in the second module, an etch stop layer over the wafer.

    摘要翻译： 一种形成半导体器件的方法，所述方法包括在第一模块中执行在晶片上的远程等离子体处理，以通过还原反应从晶片去除氧化物层。 该方法还包括在真空下将预处理晶片从第一模块转移到第二模块。 该方法还包括在第二模块中形成在晶片之上的蚀刻停止层。

    METHODS FOR FABRICATING SEMICONDUCTOR DEVICES
    16.
    发明申请
    METHODS FOR FABRICATING SEMICONDUCTOR DEVICES 有权
    制造半导体器件的方法

    公开(公告)号：US20130137240A1

    公开(公告)日：2013-05-30

    申请号：US13679345

    申请日：2012-11-16

    申请人： Samsung Electronics Co., Ltd.

    发明人： Kevin Ahn ,  Bo-Un Yoon ,  Jeong-Nam Han

    IPC分类号： H01L21/762

    CPC分类号： H01L21/76229 ,  H01L21/0206 ,  H01L21/02065 ,  H01L21/0475 ,  H01L21/30604 ,  H01L21/30621 ,  H01L21/31055 ,  H01L21/31056 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/76205 ,  H01L21/823468 ,  H01L21/823481 ,  H01L29/66545

    摘要： Provided are methods for fabricating a semiconductor device. The methods include forming a hard mask pattern on a semiconductor substrate, forming a first trench having a first width and a second trench having a second width on the semiconductor substrate using the hard mask pattern as a mask, forming an oxide film on the hard mask pattern and the first and second trenches, forming first and second isolation films on the first and second trenches by planarizing the oxide film until the hard mask pattern is exposed, and etching the first isolation film by a first thickness by performing dry cleaning on the semiconductor substrate and etching the second isolation film by a second thickness different from the first thickness.

    摘要翻译： 提供了制造半导体器件的方法。 所述方法包括在半导体衬底上形成硬掩模图案，使用硬掩模图案作为掩模，在半导体衬底上形成具有第一宽度的第一沟槽和具有第二宽度的第二沟槽，在硬掩模上形成氧化物膜 图案和第一沟槽和第二沟槽，通过平坦化氧化膜直到硬掩模图案露出来在第一和第二沟槽上形成第一和第二隔离膜，并且通过对半导体进行干洗来蚀刻第一隔离膜第一厚度第一厚度 衬底并用不同于第一厚度的第二厚度蚀刻第二隔离膜。

    POLY OPENING POLISH PROCESS
    17.
    发明申请
    POLY OPENING POLISH PROCESS 有权

    公开(公告)号：US20120322265A1

    公开(公告)日：2012-12-20

    申请号：US13162776

    申请日：2011-06-17

    申请人： Chun-Wei HSU ,  Po-Cheng Huang ,  Teng-Chun Tsai ,  Chia-Lin Hsu ,  Chih-Hsun Lin ,  Chang-Hung Kung ,  Chia-His Chen ,  Yen-Ming Chen

    发明人： Chun-Wei HSU ,  Po-Cheng Huang ,  Teng-Chun Tsai ,  Chia-Lin Hsu ,  Chih-Hsun Lin ,  Chang-Hung Kung ,  Chia-His Chen ,  Yen-Ming Chen

    IPC分类号： H01L21/304 ,  H01L21/306

    CPC分类号： H01L21/31053 ,  H01L21/02065 ,  H01L29/517 ,  H01L29/66545

    摘要： A poly opening polish process includes the following steps. A semi-finished semiconductor component is provided. The semi-finished semiconductor component includes a substrate, a gate disposed on the substrate, and a dielectric layer disposed on the substrate and covering the gate. A first polishing process is applied onto the dielectric layer. A second polishing process is applied to the gate. The second polishing process utilizes a wetting solution including a water soluble polymer surfactant, an alkaline compound and water. The poly opening polish process can effectively remove an oxide residue formed in the chemical mechanical polish, thereby improving the performance of the integrated circuit and reducing the production cost of the integrated circuit.

    摘要翻译： 多孔抛光工艺包括以下步骤。 提供半成品半导体元件。 半成品半导体部件包括基板，设置在基板上的栅极和设置在基板上并覆盖栅极的电介质层。 将第一抛光工艺施加到电介质层上。 第二次抛光工艺应用于浇口。 第二抛光工艺利用包含水溶性聚合物表面活性剂，碱性化合物和水的润湿溶液。 多孔抛光工艺可有效去除化学机械抛光中形成的氧化物残留物，从而提高集成电路的性能，降低集成电路的生产成本。

    INDEXING OF ELECTRONIC DEVICES DISTRIBUTED ON DIFFERENT CHIPS
    20.
    发明申请
    INDEXING OF ELECTRONIC DEVICES DISTRIBUTED ON DIFFERENT CHIPS 有权
    电子设备分布在不同的插座上的指标

    公开(公告)号：US20110073966A1

    公开(公告)日：2011-03-31

    申请号：US12895515

    申请日：2010-09-30

    申请人： Alessandro FREGUGLIA ,  Luca PIVIDORI

    发明人： Alessandro FREGUGLIA ,  Luca PIVIDORI

    IPC分类号： H01L29/84 ,  H01L21/50

    CPC分类号： H01L23/544 ,  H01L21/02065 ,  H01L21/78 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An embodiment of a method is proposed for indexing electronic devices. The embodiment includes the steps of forming a plurality of first chips in a first wafer, forming a plurality of second chips in a second wafer, forming the electronic devices by coupling each first chip with a corresponding second chip, and forming an index on each electronic device; the index is indicative of a position of the corresponding first chip in the first wafer. In an embodiment, the step of forming an index includes forming a first portion of the index on the first chip, and forming a second portion of the index on the second chip.

    摘要翻译： 提出了一种用于索引电子设备的方法的实施例。 该实施例包括以下步骤：在第一晶片中形成多个第一芯片，在第二晶片中形成多个第二芯片，通过将每个第一芯片与对应的第二芯片耦合形成电子器件，并在每个电子元件上形成指数 设备; 索引表示第一晶片中对应的第一芯片的位置。 在一个实施例中，形成索引的步骤包括在第一芯片上形成索引的第一部分，并在第二芯片上形成索引的第二部分。