公开(公告)号：US08907262B2

公开(公告)日：2014-12-09

申请号：US13456418

申请日：2012-04-26

申请人： Tetsuji Yamaguchi

发明人： Tetsuji Yamaguchi

IPC分类号： H01L27/00 ,  H01L27/146

CPC分类号： H01L27/14621 ,  H01L27/14607 ,  H01L27/14612 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14689 ,  H01L27/307 ,  H01L31/02164 ,  H01L31/02165 ,  H01L31/0232 ,  H01L51/442 ,  H01L51/447

摘要： A solid-state imaging device which includes, a photoelectric conversion film provided on a second surface side which is the opposite side to a first surface on which a wiring layer of a semiconductor substrate is formed, performs photoelectric conversion with respect to light in a predetermined wavelength region, and transmits light in other wavelength regions; and a photoelectric conversion layer which is provided in the semiconductor substrate, and performs the photoelectric conversion with respect to light in other wavelength regions which has transmitted the photoelectric conversion film, in which input light is incident from the second surface side with respect to the photoelectric conversion film and the photoelectric conversion layer.

摘要翻译： 一种固态成像装置，其特征在于，具备：与形成有半导体基板的布线层的第一面相反一侧的第二表面侧设置的光电转换膜，相对于规定的半导体基板的光进行光电转换 并在其他波长区域透射光; 以及光电转换层，其设置在所述半导体基板中，对于已经透射了所述光电转换膜的其他波长区域的光进行光电转换，所述光电转换膜的输入光相对于所述光电转换膜从所述第二表面侧入射 转换膜和光电转换层。

公开(公告)号：US08890271B2

公开(公告)日：2014-11-18

申请号：US12966535

申请日：2010-12-13

申请人： Turgut Tut ,  Peter Duane ,  Young-June Yu ,  Winnie N. Ye ,  Munib Wober ,  Kenneth B. Crozier

发明人： Turgut Tut ,  Peter Duane ,  Young-June Yu ,  Winnie N. Ye ,  Munib Wober ,  Kenneth B. Crozier

IPC分类号： H01L27/14 ,  H01L31/0216 ,  H01L21/311 ,  H01L31/105

CPC分类号： H01L21/31116 ,  H01L31/02164 ,  H01L31/02165 ,  H01L31/105

摘要： Various embodiments for etching of silicon nitride (SixNy) lightpipes, waveguides and pillars, fabricating photodiode elements, and integration of the silicon nitride elements with photodiode elements are described. The results show that the quantum efficiency of the photodetectors (PDs) can be increased using vertical silicon nitride vertical waveguides.

摘要翻译： 描述了用于蚀刻氮化硅（SixNy）光管，波导和柱，制造光电二极管元件以及氮化硅元件与光电二极管元件的集成的各种实施例。 结果表明，使用垂直氮化硅垂直波导可以提高光电探测器（PD）的量子效率。

公开(公告)号：US08889463B2

公开(公告)日：2014-11-18

申请号：US13572192

申请日：2012-08-10

申请人： Takahiko Yoshizawa

发明人： Takahiko Yoshizawa

IPC分类号： H01L31/18 ,  H01L31/0232 ,  G02B5/20 ,  H01L29/06 ,  G01J3/02 ,  H01L31/0216 ,  G02B5/28 ,  G01J1/04 ,  G01J3/36 ,  H01L31/0352 ,  G01J3/12

CPC分类号： G01J3/0256 ,  B81B2201/047 ,  B81B2203/0384 ,  G01J1/0488 ,  G01J3/36 ,  G01J2003/1213 ,  G02B5/201 ,  G02B5/285 ,  H01L29/06 ,  H01L31/02165 ,  H01L31/02327 ,  H01L31/02366 ,  H01L31/18

摘要： A method for manufacturing a sloped structure is disclosed. The method includes the steps of: (a) forming a sacrificial film above a substrate; (b) forming a first film above the sacrificial film, the first film having a first portion connected to the substrate, a second portion located above the sacrificial film, a third portion located between the first portion and the second portion, and a thin region in a portion of the third portion or in a boundary section between the second portion and the third portion and having a thickness smaller than the first portion; (c) removing the sacrificial film; and (d) bending the first film in the thin region, after the step (c), thereby sloping the second portion of the first film with respect to the substrate.

摘要翻译： 公开了一种倾斜结构的制造方法。 该方法包括以下步骤：（a）在衬底上形成牺牲膜; （b）在所述牺牲膜上形成第一膜，所述第一膜具有连接到所述基板的第一部分，位于所述牺牲膜上方的第二部分，位于所述第一部分和所述第二部分之间的第三部分，以及薄区域 在所述第三部分的一部分中或在所述第二部分和所述第三部分之间的边界部分中，并且具有小于所述第一部分的厚度; （c）去除牺牲膜; 以及（d）在步骤（c）之后，在薄区域中弯曲第一膜，从而使第一膜的第二部分相对于基板倾斜。

公开(公告)号：US08791404B2

公开(公告)日：2014-07-29

申请号：US13337864

申请日：2011-12-27

申请人： Nicole D. Kerness ,  Arkadii V. Samoilov ,  Zhihai Wang ,  Joy T. Jones

发明人： Nicole D. Kerness ,  Arkadii V. Samoilov ,  Zhihai Wang ,  Joy T. Jones

IPC分类号： G01J3/50

CPC分类号： H01L27/14621 ,  H01L27/14618 ,  H01L27/14625 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687 ,  H01L31/02165 ,  H01L31/02327 ,  H01L31/18 ,  H01L2224/13

摘要： Techniques are described to furnish an IR suppression filter that is formed on a glass substrate to a light sensor. In one or more implementations, a light sensor includes a substrate having a surface. One or more photodetectors are formed in the substrate and configured to detect light and provide a signal in response thereto. An IR suppression filter configured to block infrared light from reaching the surface is formed on a glass substrate. The light sensor also includes a plurality of color pass filters disposed over the surface. The color pass filters are configured to filter visible light to pass light in a limited spectrum of wavelengths to the one or more photodetectors. A buffer layer is disposed over the surface and configured to encapsulate the plurality of color pass filters and adhesion layer. The light sensor further includes through-silicon vias to provide electrical interconnections between different conductive layers.

摘要翻译： 描述了技术来提供在玻璃基板上形成到光传感器的IR抑制滤光器。 在一个或多个实施方式中，光传感器包括具有表面的基板。 在衬底中形成一个或多个光电检测器，并配置成检测光并响应于此提供信号。 构造成阻挡红外光到达表面的IR抑制滤光器形成在玻璃基板上。 光传感器还包括布置在表面上的多个彩色滤光片。 彩色通过滤光器被配置为过滤可见光以将有限的波长光中的光传递到一个或多个光电检测器。 缓冲层设置在表面上并且被配置为封装多个彩色通过滤光片和粘附层。 光传感器还包括穿硅通孔，以提供不同导电层之间的电互连。

公开(公告)号：US08742560B2

公开(公告)日：2014-06-03

申请号：US13774650

申请日：2013-02-22

申请人： International Business Machines Corporation

发明人： James W. Adkisson ,  John J. Ellis-Monaghan ,  Jeffrey P. Gambino ,  Charles F. Musante

IPC分类号： H01L31/0203 ,  H01L23/02

CPC分类号： H01L31/103 ,  H01L24/05 ,  H01L24/73 ,  H01L27/14603 ,  H01L27/1462 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1464 ,  H01L27/14643 ,  H01L31/02165 ,  H01L31/0236 ,  H01L2224/04042 ,  H01L2224/05 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/48464 ,  H01L2224/4847 ,  H01L2224/73265 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/12043 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15312 ,  H01L2924/3025 ,  Y02E10/50 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

摘要： Optical structures having an array of protuberances between two layers having different refractive indices are provided. The array of protuberances has vertical and lateral dimensions less than the wavelength range of lights detectable by a photodiode of a CMOS image sensor. The array of protuberances provides high transmission of light with little reflection. The array of protuberances may be provided over a photodiode, in a back-end-of-line interconnect structure, over a lens for a photodiode, on a backside of a photodiode, or on a window of a chip package.

摘要翻译： 提供了具有不同折射率的两层之间的突起阵列的光学结构。 突起阵列具有小于由CMOS图像传感器的光电二极管可检测的光的波长范围的垂直和侧向尺寸。 突起的阵列提供了很少的反射光的高透射率。 突起阵列可以设置在光电二极管上，后端行互连结构中，用于光电二极管的透镜，光电二极管的背面或芯片封装的窗口上。

公开(公告)号：US08637951B2

公开(公告)日：2014-01-28

申请号：US12811863

申请日：2009-01-09

申请人： Daisuke Okamoto ,  Junichi Fujikata ,  Kenichi Nishi

发明人： Daisuke Okamoto ,  Junichi Fujikata ,  Kenichi Nishi

IPC分类号： H01L31/0232 ,  H01L31/0352 ,  H01L31/0216

CPC分类号： H01L31/03529 ,  H01L31/02165 ,  Y02E10/50

摘要： A semiconductor light receiving element comprises: a substrate, a semiconductor layer of a first conductivity type formed on the substrate, a non-doped semiconductor light absorbing layer formed on the semiconductor layer of the first conductivity type, a semiconductor layer of a second conductivity type formed on the non-doped semiconductor light absorbing layer, and an electro-conductive layer formed on the semiconductor layer of the second conductivity type. A plurality of openings, periodically arrayed, are formed in a laminated body composed of the electro-conductive layer, the semiconductor layer of the second conductivity type, and the non-doped semiconductor light absorbing layer. The widths of the openings are less than or equal to the wavelength of incident light, and the openings pass through the electro-conductive layer and the semiconductor layer of the second conductivity type to reach the non-doped semiconductor light absorbing layer.

摘要翻译： 半导体光接收元件包括：基板，形成在基板上的第一导电类型的半导体层，形成在第一导电类型的半导体层上的非掺杂半导体光吸收层，第二导电类型的半导体层 形成在非掺杂半导体光吸收层上的导电层和形成在第二导电类型的半导体层上的导电层。 周期排列的多个开口形成在由导电层，第二导电类型的半导体层和非掺杂半导体光吸收层组成的层叠体中。 开口的宽度小于或等于入射光的波长，并且开口穿过导电层和第二导电类型的半导体层以到达非掺杂半导体光吸收层。

公开(公告)号：US20140001590A1

公开(公告)日：2014-01-02

申请号：US14019333

申请日：2013-09-05

申请人： Omnivision Technologies, Inc. ,  VisEra Technologies Company Limited

发明人： Ming-Kai LIU ,  Tzu-Wei HUANG ,  Jui-Hung CHANG ,  Chia-Hui HUANG ,  Teng-Sheng CHEN

IPC分类号： H01L31/0232

CPC分类号： H01L31/0232 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14685 ,  H01L31/0216 ,  H01L31/02164 ,  H01L31/02165

摘要： A method for forming an image sensor device is provided. First, a lens is provided and a first sacrificial element is formed thereon. An electromagnetic interference layer is formed on the lens and the first sacrificial element, and the first sacrificial element and electromagnetic interference layer thereon are removed to form an electromagnetic interference pattern having an opening exposing a selected portion of the lens. A second sacrificial element is formed in the opening to cover a center region of the selected portion of the lens. A peripheral region of the selected portion of the lens remains exposed. A light-shielding layer is formed on the electromagnetic interference pattern, second sacrificial element, and peripheral region of the selected portion of the lens. The second sacrificial element and light-shielding pattern are removed to expose the center region of the selected portion of the lens as a light transmitting region.

摘要翻译： 提供了一种用于形成图像传感器装置的方法。 首先，设置透镜并在其上形成第一牺牲元件。 在透镜和第一牺牲元件上形成电磁干涉层，并且去除其上的第一牺牲元件和电磁干涉层以形成具有暴露透镜的选定部分的开口的电磁干涉图案。 第二牺牲元件形成在开口中以覆盖透镜的所选部分的中心区域。 透镜的选定部分的外围区域保持暴露。 在透镜的选定部分的电磁干涉图案，第二牺牲元件和周边区域上形成遮光层。 去除第二牺牲元件和遮光图案以将透镜的所选部分的中心区域作为透光区域。

公开(公告)号：US08604405B2

公开(公告)日：2013-12-10

申请号：US12415580

申请日：2009-03-31

申请人： Han-Chi Liu ,  Jeng-Shyan Lin ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Wen-De Wang ,  Chun-Chieh Chuang

发明人： Han-Chi Liu ,  Jeng-Shyan Lin ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Wen-De Wang ,  Chun-Chieh Chuang

IPC分类号： H01L27/00 ,  H01J40/14

CPC分类号： H01L27/1462 ,  H01L27/1464 ,  H01L27/14685 ,  H01L31/02165

摘要： Provided is an image sensor device. The image sensor device includes a device substrate having a front side and a back side. The device substrate has a radiation-sensing region that can sense radiation that has a corresponding wavelength. The image sensor also includes a first layer formed over the front side of the device substrate. The first layer has a first refractive index and a first thickness that is a function of the first refractive index. The image sensor also has a second layer formed over the first layer. The second layer is different from the first layer and has a second refractive index and a second thickness that is a function of the second refractive index.

摘要翻译： 提供了一种图像传感器装置。 图像传感器装置包括具有正面和背面的装置基板。 器件衬底具有可以感测具有相应波长的辐射的辐射感测区域。 图像传感器还包括形成在器件衬底的前侧上的第一层。 第一层具有第一折射率和第一折射率的函数的第一厚度。 图像传感器还具有形成在第一层上的第二层。 第二层与第一层不同，具有第二折射率和第二折射率的函数的第二厚度。

公开(公告)号：US08582115B2

公开(公告)日：2013-11-12

申请号：US12900254

申请日：2010-10-07

申请人： Lu Gao ,  Paulo E. X. Silveira ,  Mark Meloni

发明人： Lu Gao ,  Paulo E. X. Silveira ,  Mark Meloni

IPC分类号： G01B9/02 ,  G02B5/18 ,  G01D5/36

CPC分类号： H01L31/02165 ,  G02B26/001 ,  G02B26/005

摘要： A multilayer optical device includes an arrangement, on a substrate, of a first layer, a second layer, and a space therebetween. The second layer is a thin-film. The arrangement of the first and second layers and the space therebetween produces transmitted, reflected, or dispersed spectrally modified electromagnetic energy from electromagnetic energy incident upon the arrangement. An optical function of the device is dependent at least in part on interference effects. An optical detector system includes a similar multilayer optical device. The space within the device is in fluid communication with structures for receiving a fluid such that the device operates in a first or second mode depending on absence or presence of the fluid within the space. The system includes a detector for receiving the modified electromagnetic energy, and a controller in fluid communication with the space that establishes the absence or presence of the fluid in the space.

摘要翻译： 多层光学装置包括在基板上的第一层，第二层和它们之间的空间的布置。 第二层是薄膜。 第一层和第二层的布置以及它们之间的空间通过入射在该布置上的电磁能产生透射，反射或分散的光谱改良的电磁能。 该设备的光学功能至少部分依赖于干扰效应。 光学检测器系统包括类似的多层光学器件。 装置内的空间与用于接收流体的结构流体连通，使得装置以第一或第二模式操作，取决于空间内流体的不存在或存在。 该系统包括用于接收修改的电磁能的检测器，以及与空间流体连通的控制器，其建立空间中不存在或不存在流体。

公开(公告)号：US08579434B2

公开(公告)日：2013-11-12

申请号：US13278026

申请日：2011-10-20

申请人： Babak Amirparviz ,  Andrew Lingley

发明人： Babak Amirparviz ,  Andrew Lingley

IPC分类号： G02C7/00 ,  G02C7/02 ,  G02C7/04

CPC分类号： G02C7/04 ,  H01L31/02162 ,  H01L31/02165 ,  H01L31/02167 ,  H01L31/022416 ,  H01L31/022441 ,  H01L31/068 ,  H01L31/103 ,  Y02E10/547

摘要： Solar cells attached to a contact lens are provided, as well as methods for making the solar cells and contact lenses. The solar cells have electrodes on only one side of the device, which facilitates attachment of the solar cell to a contact lens. In one embodiment, the solar cells are made using a “two sided” process. By using the two-sided process, solar cells of only a few microns in thickness can be fabricated. Such relatively thin solar cells can be incorporated into a contact lens without discomfort to the wearer. By providing an infinitely renewable power source on a contact lens, the solar cells enable the use of electronic components on the contact lens while eliminating the recharging or replacing issues that arise with batteries.

摘要翻译： 提供了附着于隐形眼镜的太阳能电池，以及制造太阳能电池和隐形眼镜的方法。 太阳能电池仅在设备的一侧具有电极，这有助于将太阳能电池连接到隐形眼镜。 在一个实施例中，使用“双面”方法制造太阳能电池。 通过使用双面工艺，可以制造仅几微米厚的太阳能电池。 这种相对薄的太阳能电池可以并入到隐形眼镜中，而不会对佩戴者造成不适。 通过在隐形眼镜上提供无限可再生的电源，太阳能电池能够在隐形眼镜上使用电子部件，同时消除充电或更换电池产生的问题。