公开(公告)号：US08174004B2

公开(公告)日：2012-05-08

申请号：US12585422

申请日：2009-09-15

申请人： Sheng-Wei Chen ,  Chung-Hua Wang ,  Jenn-Chang Hwang

发明人： Sheng-Wei Chen ,  Chung-Hua Wang ,  Jenn-Chang Hwang

IPC分类号： H01L35/24

CPC分类号： H01L51/0516 ,  H01L51/0533

摘要： An organic thin film transistor is disclosed, which comprises an azole-metal complex compound used as the gate insulating layer. The method of making the self-assembled gate insulating layer is a water-based processing method that enables the azole-metal complex compound to be self-formed on the patterned gate electrode in a water-based solution and serves as a gate insulating layer. The organic thin film transistor (OTFT) of the present invention comprises the azole-metal complex compound used in the gate insulating layer, therefore can be manufactured in a simple, quick, easy way for large quantities, and low cost.

摘要翻译： 公开了一种有机薄膜晶体管，其包括用作栅极绝缘层的唑类金属络合物。 制造自组装栅极绝缘层的方法是水溶性处理方法，其能够在水性溶液中在图案化栅电极上自形成唑类金属络合物，并且用作栅极绝缘层。 本发明的有机薄膜晶体管（OTFT）包括在栅极绝缘层中使用的唑类金属络合物，因此可以以简单，快速，容易的方式制造大量且成本低的方法。

公开(公告)号：US07968871B2

公开(公告)日：2011-06-28

申请号：US12101942

申请日：2008-04-11

申请人： Yiliang Wu ,  Hualong Pan ,  Ping Liu ,  Yuning Li

发明人： Yiliang Wu ,  Hualong Pan ,  Ping Liu ,  Yuning Li

IPC分类号： H01L51/30

CPC分类号： H01L21/02126 ,  H01L21/02282 ,  H01L21/3125 ,  H01L51/0036 ,  H01L51/0533

摘要： Organic thin film transistors with improved mobility are disclosed. The semiconducting layer comprises a semiconductor material of Formula (I): wherein R1 and R2 are independently selected from alkyl, substituted alkyl, aryl, and substituted aryl; and R3 and R4 are independently selected from hydrogen, alkyl, substituted alkyl, aryl, and substituted aryl. A silanized interfacial layer is also present which has alkyl sidechains extending from its surface towards the semiconducting layer.

摘要翻译： 公开了具有改进的移动性的有机薄膜晶体管。 半导体层包含式（I）的半导体材料：其中R1和R2独立地选自烷基，取代的烷基，芳基和取代的芳基; 并且R 3和R 4独立地选自氢，烷基，取代的烷基，芳基和取代的芳基。 还存在硅烷化界面层，其具有从其表面朝向半导体层延伸的烷基侧链。

公开(公告)号：US07956352B2

公开(公告)日：2011-06-07

申请号：US11885970

申请日：2006-03-22

申请人： Mikio Yukawa ,  Nobuharu Ohsawa ,  Yoshinobu Asami

发明人： Mikio Yukawa ,  Nobuharu Ohsawa ,  Yoshinobu Asami

IPC分类号： H01L29/08 ,  H01L35/24 ,  H01L51/00

CPC分类号： H01L27/1255 ,  B82Y10/00 ,  G11C13/0014 ,  G11C13/0069 ,  G11C2013/009 ,  G11C2213/77 ,  G11C2213/79 ,  H01L27/101 ,  H01L27/105 ,  H01L27/112 ,  H01L27/11206 ,  H01L27/11286 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/13 ,  H01L27/285 ,  H01L51/0042 ,  H01L51/0051 ,  H01L51/0059 ,  H01L51/0081 ,  H01L51/0533

摘要： On object of the invention is to provide a non-volatile memory device, in which data can be added to the memory device after a manufacturing process and forgery and the like by rewriting can be prevented, and a semiconductor device including the memory device. Another object of the invention is to provide a highly-reliable, inexpensive, and nonvolatile memory device and a semiconductor device including the memory device. A memory element includes a first conductive layer, a second conductive layer, a first insulating layer with a thickness of 0.1 nm or more and 4 nm or less being in contact with the first conductive layer, and an organic compound layer interposed between the first conductive layer, the first insulating layer, and the second conductive layer.

摘要翻译： 本发明的目的是提供一种非易失性存储器件，其中可以在制造过程之后将数据添加到存储器件，并且可以防止通过重写来防止伪造等，以及包括存储器件的半导体器件。 本发明的另一个目的是提供一种高度可靠，便宜且非易失性的存储器件和包括存储器件的半导体器件。 存储元件包括第一导电层，第二导电层，与第一导电层接触的厚度为0.1nm以上且4nm以下的第一绝缘层，以及介于第一导电层之间的有机化合物层 层，第一绝缘层和第二导电层。

公开(公告)号：US20100320448A1

公开(公告)日：2010-12-23

申请号：US12669676

申请日：2008-07-16

申请人： Christoph Wilhelm Sele ,  Monica Johanna Beenhakkers ,  Gerwin Hermanus Gelinck ,  Nicolaas Aldegonda Jan Maria van Aerle ,  Hjalmar Edzer Ayco Huitema

发明人： Christoph Wilhelm Sele ,  Monica Johanna Beenhakkers ,  Gerwin Hermanus Gelinck ,  Nicolaas Aldegonda Jan Maria van Aerle ,  Hjalmar Edzer Ayco Huitema

IPC分类号： H01L51/05 ,  H01L21/02

CPC分类号： H01L21/283 ,  H01L21/31133 ,  H01L27/3244 ,  H01L27/3276 ,  H01L51/0021 ,  H01L51/0533

摘要： An electronic component, notably one including, for example, a TFT, a storage capacitor, or a crossing between electrically conductive layers of a stack device is disclosed. The electronic component comprises a substrate whereon a first electrically conductive layer forming electrode is provided. A second electrode formed by a second electrically conductive layer is separated from the first electrode by at least a dielectric layer, comprising an interlayer of an electrically insulating material, preferably having high resistance against view (a) electrical breakdown and a further layer of a photo-patternable electrically insulating material.

摘要翻译： 公开了一种电子部件，特别是包括例如TFT，存储电容器或堆叠装置的导电层之间的交叉的电子部件。 电子部件包括设置有第一导电层形成电极的基板。 由第二导电层形成的第二电极通过至少一个电介质层与第一电极分开，该电介质层包括电绝缘材料的中间层，优选地具有高电阻（a）电击穿和另一层照片 电绝缘材料。

公开(公告)号：US20100237326A1

公开(公告)日：2010-09-23

申请号：US12224502

申请日：2006-12-27

申请人： Satoru Ohta

发明人： Satoru Ohta

IPC分类号： H01L51/10 ,  H01L51/40

CPC分类号： H01L21/02118 ,  H01L21/022 ,  H01L21/02282 ,  H01L21/312 ,  H01L51/0533 ,  H01L51/0541 ,  H01L51/0545

摘要： An organic transistor including a substrate 1, a pair of a source electrode 4 and a drain electrode 5, an organic semiconductor layer 6 provided between the source electrode 4 and the drain electrode 5, and a gate electrode 2 provided in association with the organic semiconductor 6 with a gate insulating layer 3 interposed therebetween, wherein the gate insulating layer 3 includes an organic insulating layer 3a containing an insulating organic material and a barrier layer 3b covering a surface of the organic insulating layer and having process resistance.

摘要翻译： 一种有机晶体管，包括基板1，一对源电极4和漏电极5，设置在源电极4和漏电极5之间的有机半导体层6以及与有机半导体 6，其间插入有栅极绝缘层3，其中栅极绝缘层3包括含有绝缘有机材料的有机绝缘层3a和覆盖有机绝缘层的表面并具有工艺阻力的阻挡层3b。

公开(公告)号：US20100065830A1

公开(公告)日：2010-03-18

申请号：US12379856

申请日：2009-03-03

申请人： Do Hwan Kim ,  Hyun Sik Moon ,  Byung Wook Yoo ,  Sang Yoon Lee ,  Bang Lin Lee ,  Jeong II Park ,  Eun Jeong Jeong

发明人： Do Hwan Kim ,  Hyun Sik Moon ,  Byung Wook Yoo ,  Sang Yoon Lee ,  Bang Lin Lee ,  Jeong II Park ,  Eun Jeong Jeong

IPC分类号： H01L51/30 ,  H01L51/40 ,  H01L21/26

CPC分类号： H01L51/0533

摘要： Disclosed herein are a method for fabricating an organic thin film transistor, including treating the surfaces of a gate insulating layer and source/drain electrodes with a self-assembled monolayer (SAM)-forming compound through a one-pot reaction, and an organic thin film transistor fabricated by the method. According to example embodiments, the surface-treatment of the gate insulating layer and the source/drain electrodes may be performed in a single vessel through a single process.

摘要翻译： 本文公开了一种用于制造有机薄膜晶体管的方法，包括通过一锅反应用自组装单层（SAM）形成化合物处理栅极绝缘层和源极/漏极的表面，以及有机薄膜 通过该方法制造的薄膜晶体管。 根据示例实施例，栅极绝缘层和源极/漏极的表面处理可以通过单个工艺在单个容器中进行。

公开(公告)号：US07679085B2

公开(公告)日：2010-03-16

申请号：US11646241

申请日：2006-12-28

申请人： Woong Gi Jun ,  Gee Sung Chae ,  Jae Seok Heo

发明人： Woong Gi Jun ,  Gee Sung Chae ,  Jae Seok Heo

IPC分类号： H01L29/04 ,  H01L35/24

CPC分类号： H01L29/78669 ,  H01L27/1248 ,  H01L27/1292 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/66765 ,  H01L51/0533 ,  H01L51/0545

摘要： A method for fabricating a thin film transistor (TFT) on a substrate includes forming a gate electrode; forming a semiconductor layer being insulated from the gate electrode and partially overlapped with the gate electrode; sequentially forming first and second gate insulating layers between the gate electrode and the semiconductor layer, wherein the first gate insulating layer is formed of a material different from the second gate insulating layer and at least one of the first and second gate insulating layers includes a sol-compound; and forming source and drain electrodes at both sides of the semiconductor layer.

摘要翻译： 在衬底上制造薄膜晶体管（TFT）的方法包括：形成栅电极; 形成与所述栅电极绝缘并与所述栅电极部分重叠的半导体层; 在栅电极和半导体层之间依次形成第一栅极绝缘层和第二栅极绝缘层，其中第一栅极绝缘层由不同于第二栅极绝缘层的材料形成，并且第一和第二栅极绝缘层中的至少一个包括溶胶 -复合; 以及在半导体层的两侧形成源极和漏极。

公开(公告)号：US07619245B2

公开(公告)日：2009-11-17

申请号：US11497690

申请日：2006-08-01

申请人： Bo-sung Kim ,  Joon-hak Oh ,  Yong-uk Lee

发明人： Bo-sung Kim ,  Joon-hak Oh ,  Yong-uk Lee

IPC分类号： H01L35/24

CPC分类号： H01L51/0533

摘要： The present disclosure relates to a display device comprising an insulating substrate; a source electrode and a drain electrode on the insulating substrate and separated by a channel area; an organic semiconductor layer formed in the channel area and on at least a portion of the source electrode and at least a portion of the drain electrode; and a self-assembly monolayer having a first portion disposed between the organic semiconductor layer and the source electrode and a second portion disposed between the organic semiconductor layer and the drain electrode to reduce contact resistance between the electrodes and the organic semiconductor layer. Thus, embodiments of present invention provide a display device including a TFT that is enhanced in its performance.

摘要翻译： 本公开涉及包括绝缘基板的显示装置; 绝缘基板上的源电极和漏极，并由沟道区分离; 有机半导体层，其形成在所述沟道区域中以及所述源电极和所述漏电极的至少一部分的至少一部分上; 以及具有设置在有机半导体层和源电极之间的第一部分的自组装单层和设置在有机半导体层和漏电极之间的第二部分，以减小电极和有机半导体层之间的接触电阻。 因此，本发明的实施例提供了一种显示装置，其包括增强其性能的TFT。

公开(公告)号：US07595504B2

公开(公告)日：2009-09-29

申请号：US12047654

申请日：2008-03-13

申请人： Taek Ahn ,  Min-Chul Suh ,  Jin-Saong Park ,  Seok-Jong Lee ,  Jung-Han Shin

发明人： Taek Ahn ,  Min-Chul Suh ,  Jin-Saong Park ,  Seok-Jong Lee ,  Jung-Han Shin

IPC分类号： H01L29/08

CPC分类号： H01L51/0533 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L51/0545

摘要： A thin film transistor includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer that is insulated from the gate electrode and is electrically connected to the source and drain electrodes; an insulating layer that insulates the gate electrode from the source and drain electrodes or the organic semiconductor layer; and an ohmic contact layer that is interposed between the source/drain electrodes and the organic semiconductor and contains a compound having a hole transporting unit. By providing the ohmic contact layer, the ohmic contact between source/drain electrodes and the organic semiconductor layer can be effectively achieved and the adhesive force between the source/drain electrodes and the organic semiconductor layer is increased. In addition, a flat panel display having improved reliability can be obtained using the thin film transistor.

公开(公告)号：US07585697B2

公开(公告)日：2009-09-08

申请号：US11589217

申请日：2006-10-30

申请人： Soichi Moriya

发明人： Soichi Moriya

IPC分类号： H01L51/40

CPC分类号： H01L51/0533 ,  G02F1/1368 ,  H01L21/31608 ,  H01L51/0012 ,  H01L51/0036 ,  H01L51/0037 ,  H01L51/0039 ,  H01L51/0043 ,  H01L51/0516 ,  H01L51/0545

摘要： Aspects of the invention can provide a thin-film transistor having good transistor characteristics and operable with a low driving voltage, a method of producing such a thin-film transistor, a high-reliability electronic circuit, a display, and an electronic device. In an exemplary thin-film transistor according to the invention, a gate electrode can be formed on a substrate via an underlying layer, and a gate insulating layer can be formed on the substrate such that the gate electrode is covered with the gate insulating layer. A source electrode and a drain electrode are formed on the gate insulating layer such that they are separated from each other by a gap formed just above the gate electrode. An organic semiconductor layer can be formed thereon such that the electrodes are covered with the organic semiconductor layer. A region between the electrodes of the organic semiconductor layer functions as a channel region. A protective layer can be arranged on the organic semiconductor layer. This thin-film transistor is characterized in that the organic semiconductor layer is formed after the gate insulating layer is formed, and the gate insulating layer has the capability of causing the organic semiconductor layer to be aligned.

摘要翻译： 本发明的方面可以提供具有良好的晶体管特性并且可以以低驱动电压工作的薄膜晶体管，制造这种薄膜晶体管的方法，高可靠性电子电路，显示器和电子器件。 在根据本发明的示例性薄膜晶体管中，可以通过下层在基板上形成栅极电极，并且可以在基板上形成栅极绝缘层，使得栅极电极被栅极绝缘层覆盖。 源电极和漏电极形成在栅极绝缘层上，使得它们通过形成在栅电极正上方的间隙彼此分离。 可以在其上形成有机半导体层，使得电极被有机半导体层覆盖。 有机半导体层的电极之间的区域用作沟道区域。 可以在有机半导体层上设置保护层。 该薄膜晶体管的特征在于，在形成栅极绝缘层之后形成有机半导体层，并且栅极绝缘层具有使有机半导体层对准的能力。