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公开(公告)号:US20240018681A1
公开(公告)日:2024-01-18
申请号:US18362445
申请日:2023-07-31
发明人: Yinuo Jin , Hongchao Yang , Jian Wang , Hui Wang
CPC分类号: C25D5/18 , C25D7/123 , C25D17/001 , C25D17/002 , C25D21/12
摘要: The present invention discloses a plating apparatus and plating methods for plating metal layers on a substrate. In an embodiment, a plating method comprises: step 1: immersing a substrate into plating solution of a plating chamber assembly including at least a first anode and a second anode; step 2: turning on a first plating power supply applied on the first anode, setting the first plating power supply to output a power value P11 and continue with a period T11; step 3: when the period T11 ends, adjusting the first plating power supply applied on the first anode to output a power value P12 and continue with a period T12, at the same time, turning on a second plating power supply applied on the second anode, and setting the second plating power supply to output a power value P21 and continue with a period T21; and step 4: when the period T21 ends, adjusting the second plating power supply applied on the second anode to output a power value P22 and continue with a period T22; wherein step 2 to step 4 are performed periodically.
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公开(公告)号:US20230374689A1
公开(公告)日:2023-11-23
申请号:US17747981
申请日:2022-05-18
发明人: Chia Chun HSU , Chin-Feng WANG
CPC分类号: C25D5/18 , C25D7/12 , C25D5/007 , C25D5/08 , H01L21/561
摘要: A method for manufacturing a package includes generating an electric field between an anode and a cathode in an electroplating solution to electroplate a substrate electrically connected to the cathode; depositing metal on a central region of the substrate with a first deposition rate; depositing metal on an outer region of the substrate with a second deposition rate lower than the first deposition rate; and reducing the first deposition rate.
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公开(公告)号:US20230366119A1
公开(公告)日:2023-11-16
申请号:US18028638
申请日:2021-09-29
摘要: A chamber in a substrate processing system comprises a substrate holder configured to support a substrate, a nozzle arranged above the substrate, the nozzle configured to inject a pre-wetting liquid onto a surface of the substrate during a pre-wetting period, and at least one gas injector arranged radially outward of the nozzle. The at least one gas injector is configured to inject gas toward an edge of the substrate for a drying period subsequent to the pre-wetting period to remove the pre-wetting liquid from the edge of the substrate.
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公开(公告)号:US20230349064A1
公开(公告)日:2023-11-02
申请号:US18348055
申请日:2023-07-06
IPC分类号: C25D17/02 , C25D7/12 , H01L21/288 , H01L21/67 , H01L21/768 , C25D17/04 , C25D21/10
CPC分类号: C25D17/02 , C25D7/12 , H01L21/288 , H01L21/6723 , H01L21/76873 , C25D17/04 , C25D21/10 , C25D17/001
摘要: Electroplating processing systems according to the present technology may include a recirculating tank containing a first volume of processing fluid. The recirculating tank may be fluidly coupled with a delivery pump. The systems may include a vessel configured to receive the processing fluid from the pump. The vessel may include an inner chamber and an outer chamber, and the inner chamber may be sized to hold a second volume of processing fluid less than the first volume of processing fluid. A liquid level sensor may be associated with the vessel to provide a liquid level indication in the outer chamber. The systems may include a return line coupled with an outlet of the vessel and coupled with an inlet of the recirculating tank. The systems may also include a return pump fluidly coupled with the return line. The return pump may be electrically coupled with the liquid level sensor.
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公开(公告)号:US20230337370A1
公开(公告)日:2023-10-19
申请号:US18337706
申请日:2023-06-20
申请人: LG INNOTEK CO., LTD.
发明人: Yun Mi BAE , Soon Gyu KWON , Sang Hwa KIM , Sang Young LEE , Jin Hak LEE , Han Su LEE , Dong Hun JEONG , In Ho JEONG , Dae Young CHOI , Jung Ho HWANG
IPC分类号: H05K3/24 , H05K3/10 , C25D5/48 , H05K3/18 , H05K1/09 , C25D7/12 , H05K1/02 , C25D3/48 , C25D5/02 , H05K1/11 , C25D3/38
CPC分类号: H05K3/244 , H05K3/108 , C25D5/48 , H05K3/181 , H05K1/09 , C25D7/123 , H05K1/0296 , C25D3/48 , H05K3/188 , C25D5/022 , H05K1/11 , H05K2201/0989 , C25D3/38 , H05K2201/0338 , H05K2201/099 , H05K2201/098 , H05K2203/1184
摘要: A printed circuit board includes an insulating layer, a circuit pattern on the insulating layer, and a surface treatment layer on the circuit pattern. The surface treatment layer includes a bottom surface having a width wider than a width of a top surface of the circuit pattern.
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公开(公告)号:US20230272546A1
公开(公告)日:2023-08-31
申请号:US18195021
申请日:2023-05-09
发明人: Kwan Wook Roh , Charles Sharbono , Kyle M. Hanson
CPC分类号: C25D3/38 , C25D7/12 , C25D17/002 , C25D21/14 , C25D17/001
摘要: Electroplating methods and systems are described that include adding a metal-ion-containing starting solution to a catholyte to increase a metal ion concentration in the catholyte to a first metal ion concentration. The methods and systems further include measuring the metal ion concentration in the catholyte while the metal ions electroplate onto a substrate and the catholyte reaches a second metal ion concentration that is less than the first metal ion concentration. The methods and systems additionally include adding a portion of an anolyte directly to the catholyte when the catholyte reaches the second metal ion concentration. The addition of the portion of the anolyte increases the metal ion concentration in the catholyte to a third metal ion concentration that is greater than or about the first metal ion concentration.
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公开(公告)号:US20230236507A1
公开(公告)日:2023-07-27
申请号:US17585033
申请日:2022-01-26
发明人: Tzu-Yang LIN , Chen-Yu LIU , Ching-Yu CHANG
CPC分类号: G03F7/0392 , G03F7/0045 , G03F7/2006 , C25D7/12 , G03F7/322 , G03F7/34
摘要: A method of manufacturing a semiconductor structure includes the following operations. A photoresist layer is formed on a metal layer, in which the photoresist layer includes an additive selected from the group consisting of a first heterocyclic compound containing a triazole ring, a second heterocyclic compound containing an imidazole ring, biphenyl thiol, biphenyl dithiol, benzenethiol, and benzenedithiol. The photoresist layer is exposed to an actinic radiation. The photoresist layer is developed by a developer to form holes in the photoresist layer. Redistribution lines are formed in the holes by an electroplating process.
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公开(公告)号:US20230235474A1
公开(公告)日:2023-07-27
申请号:US18160109
申请日:2023-01-26
CPC分类号: C25D17/001 , C25D7/12 , C25D17/002 , C25D17/02 , C25D21/14
摘要: Exemplary methods of semiconductor processing may include performing an electroplating operation on a semiconductor substrate in an electroplating bath within a vessel of an electroplating system. The methods may include removing the semiconductor substrate from the electroplating bath. The methods may include closing a valve associated with a first drain from the electroplating system. The methods may include increasing flow to a second drain from the electroplating system. The second drain may be associated with a drain channel from the vessel of the electroplating system.
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公开(公告)号:US11697887B2
公开(公告)日:2023-07-11
申请号:US17078413
申请日:2020-10-23
发明人: Nolan L. Zimmerman , Charles Sharbono , Gregory J. Wilson , Paul R. McHugh , Paul Van Valkenburg , Deepak Saagar Kalaikadal , Kyle M. Hanson
CPC分类号: C25D17/10 , C25D7/123 , C25D17/001 , C25D17/002 , C25D21/12 , C25D21/18
摘要: Electroplating systems may include an electroplating chamber. The systems may also include a replenish assembly fluidly coupled with the electroplating chamber. The replenish assembly may include a first compartment housing anode material. The first compartment may include a first compartment section in which the anode material is housed and a second compartment section separated from the first compartment section by a divider. The replenish assembly may include a second compartment fluidly coupled with the electroplating chamber and electrically coupled with the first compartment. The replenish assembly may also include a third compartment electrically coupled with the second compartment, the third compartment including an inert cathode.
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公开(公告)号:US11682739B2
公开(公告)日:2023-06-20
申请号:US16432702
申请日:2019-06-05
申请人: Meng Tao , Wen-Cheng Sun , Xiaofei Han
发明人: Meng Tao , Wen-Cheng Sun , Xiaofei Han
CPC分类号: H01L31/022458 , C25D3/44 , C25D3/665 , C25D5/50 , C25D7/12 , C25D7/126 , H01L31/022425 , H01L31/1864 , Y02E10/50 , Y02P70/50
摘要: Electroplating of aluminum may be utilized to form electrodes for solar cells. In contrast to expensive silver electrodes, aluminum allows for reduced cell cost and addresses the problem of material scarcity. In contrast to copper electrodes which typically require barrier layers, aluminum allows for simplified cell structures and fabrication steps. In the solar cells, point contacts may be utilized in the backside electrodes for increased efficiency. Solar cells formed in accordance with the present disclosure enable large-scale and cost-effective deployment of solar photovoltaic systems.
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