公开(公告)号：US20100327159A1

公开(公告)日：2010-12-30

申请号：US12492894

申请日：2009-06-26

Applicant: Wilhelm P. Platow ,  Neil J. Bassom ,  Peter F. Kurunczi ,  Alexander S. Perel ,  Craig R. Chaney

Inventor： Wilhelm P. Platow ,  Neil J. Bassom ,  Peter F. Kurunczi ,  Alexander S. Perel ,  Craig R. Chaney

IPC: H01J37/317 ,  H01J37/05 ,  H01J49/26

CPC classification number: H01J49/10 ,  H01J27/02 ,  H01J37/08 ,  H01J37/3171 ,  H01J2209/017 ,  H01J2237/022 ,  H01J2237/05 ,  H01J2237/30466

Abstract: In an ion implanter, a Faraday cup is utilized to receive an ion beam generated during ion source cleaning. The detected beam has an associated mass spectrum which indicates when the ion source cleaning process is complete. The mass spectrum results in a signal composed of a cleaning agent and the material comprising the ion source. This signal will rise over time as the ion source chamber is being cleaned and will level-off and remain constant once the deposits are etched away from the source chamber, thereby utilizing existing implant tools to determine endpoint detection during ion source cleaning.

Abstract translation: 在离子注入机中，法拉第杯用于接收在离子源清洁期间产生的离子束。 检测到的光束具有相关联的质谱，其指示何时完成离子源清洁过程。 质谱产生由清洁剂和包含离子源的材料组成的信号。 当离子源室被清洁时，该信号将随着时间的推移而升高，并且一旦沉积物从源室被蚀刻掉，就会保持恒定，从而利用现有的植入工具确定离子源清洁期间的端点检测。

公开(公告)号：US07853364B2

公开(公告)日：2010-12-14

申请号：US11947720

申请日：2007-11-29

Applicant: James D. Deakins ,  Dennis J. Hansen ,  Leonard J. Mahoney ,  Tolga Erguder ,  David M. Burtner

Inventor： James D. Deakins ,  Dennis J. Hansen ,  Leonard J. Mahoney ,  Tolga Erguder ,  David M. Burtner

IPC: G06F19/00

CPC classification number: H01J27/02 ,  H01J37/08 ,  H01J37/304 ,  H01J2237/006 ,  H01J2237/31

Abstract: An ion source, often used for materials processing applications in a vacuum processing chamber, is provided with an adaptive control system. The adaptive control system has a microprocessor and memory that regulate the inputs of power and gas flow into the ion source. The adaptive control system monitors and stores the dynamic input impedance properties and status of input devices to the ion source. The adaptive control system may additionally control magnetic fields within the ion source. The adaptive control system provides a multivariable control for driving any combination of input power, gas flow, magnetic field, or electrostatic ion beam extraction or acceleration field into the ion source.

Abstract translation: 通常用于真空处理室中的材料处理应用的离子源具有自适应控制系统。 自适应控制系统具有微处理器和存储器，其调节输入到离子源的功率和气体的输入。 自适应控制系统监测和存储输入设备的动态输入阻抗特性和状态到离子源。 自适应控制系统可以另外控制离子源内的磁场。 自适应控制系统提供多变量控制，用于将输入功率，气体流量，磁场或静电离子束提取或加速场的任何组合驱动到离子源中。

公开(公告)号：US20100294648A1

公开(公告)日：2010-11-25

申请号：US12704123

申请日：2010-02-11

Applicant: John Keller ,  Noel Smith ,  Roderick Boswell ,  Lawrence Scipioni ,  Christine Charles ,  Orson Sutherland

Inventor： John Keller ,  Noel Smith ,  Roderick Boswell ,  Lawrence Scipioni ,  Christine Charles ,  Orson Sutherland

IPC: C23C14/46 ,  H01J27/02

CPC classification number: H01J37/32183 ,  H01J27/16 ,  H01J37/08 ,  H01J37/241 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32669 ,  H01J2237/0815

Abstract: The present invention provides an inductively coupled, magnetically enhanced ion beam source, suitable to be used in conjunction with probe-forming optics to produce an ion beam without kinetic energy oscillations induced by the source.

Abstract translation: 本发明提供了一种电感耦合磁增强型离子束源，适用于与探针形成光学器件结合使用以产生离子束而不产生由该源引起的动能振荡。

公开(公告)号：US20100289409A1

公开(公告)日：2010-11-18

申请号：US12504513

申请日：2009-07-16

Applicant: Glenn B. Rosenthal

Inventor： Glenn B. Rosenthal

IPC: H01J27/02

CPC classification number: H01J27/18 ,  G21G1/10 ,  H01J37/08 ,  H05H1/02 ,  H05H1/14

Abstract: An ion source is disclosed including: a chamber disposed about a longitudinal axis and containing a gas, a magnetic confinement system configured to produce a magnetic field in a confinement region within the chamber, an electron cyclotron resonance driver which produces a time varying electric field which drives the cyclotron motion of electrons located within the confinement region, the driven electrons interacting with the gas to form a confined plasma. During operation, the magnetic confinement system confines the plasma in the confinement region such that a portion of atoms in the plasma experience multiple ionizing interactions with the driven electrons to form multiply ionized ions having a selected final ionization state.

Abstract translation: 公开了一种离子源，包括：围绕纵向轴线设置并容纳气体的腔室，配置成在腔室内的限制区域中产生磁场的磁约束系统，产生时变电场的电子回旋加速器共振驱动器， 驱动位于限制区域内的电子的回旋加速器运动，被驱动的电子与气体相互作用以形成约束等离子体。 在操作期间，磁约束系统将等离子体限制在限制区域中，使得等离子体中的一部分原子经受与被驱动电子的多次电离相互作用以形成具有选定的最终电离状态的多离子离子化离子。

公开(公告)号：US20100288940A1

公开(公告)日：2010-11-18

申请号：US12697884

申请日：2010-02-01

Applicant: Richard David Goldberg ,  Christopher Burgess

Inventor： Richard David Goldberg ,  Christopher Burgess

IPC: H01J1/52 ,  H01J27/08

CPC classification number: H01J37/08 ,  H01J27/024 ,  H01J2237/083

Abstract: The present invention relates to a front plate for an ion source that is suitable for an ion implanter. The front plate according to the invention comprises obverse and reverse sides, an exit aperture for allowing egress of ions from the ion source that extends substantially straight through the front plate between the obverse and reverse sides, and a slot penetrating through the front plate from obverse side to reverse side at a slant for at least part of its depth, the slot extending from a side of the front plate to join the exit aperture. The slot is slanted to occlude line of sight into the ion source when viewed from in front, yet provides an expansion gap.

Abstract translation: 本发明涉及适用于离子注入机的离子源用前板。 根据本发明的前板包括正面和反面，出口孔用于允许从离子源排出离子，该离子源在正面和反面之间基本上直线地延伸穿过前板，以及从正面穿过前板的狭槽 侧面以斜面反转至少部分其深度，所述狭槽从前板的一侧延伸以连接出口孔。 当从前面观察时，槽倾斜以将视线遮挡到离子源中，但是提供了扩展间隙。

公开(公告)号：US07819981B2

公开(公告)日：2010-10-26

申请号：US10973673

申请日：2004-10-26

Applicant: Frank DiMeo, Jr. ,  James Dietz ,  W. Karl Olander ,  Robert Kaim ,  Steven E. Bishop ,  Jeffrey W. Neuner ,  Jose I. Arno

Inventor： Frank DiMeo, Jr. ,  James Dietz ,  W. Karl Olander ,  Robert Kaim ,  Steven E. Bishop ,  Jeffrey W. Neuner ,  Jose I. Arno

IPC: B08B6/00

CPC classification number: C23G5/00 ,  C23C14/564 ,  H01J37/08 ,  H01J37/32862 ,  H01J2237/022 ,  H01J2237/31701

Abstract: A method and apparatus for cleaning residue from components of an ion source region of an ion implanter used in the fabrication of microelectronic devices. To effectively remove residue, the components are contacted with a gas-phase reactive halide composition for sufficient time and under sufficient conditions to at least partially remove the residue. The gas-phase reactive halide composition is chosen to react selectively with the residue, while not reacting with the components of the ion source region or the vacuum chamber.

Abstract translation: 一种用于清洁用于制造微电子器件的离子注入机的离子源区域的组分的残留物的方法和装置。 为了有效地除去残留物，将组分与气相反应性卤化物组合物接触足够的时间并在足够的条件下至少部分地除去残余物。 选择气相反应性卤化物组合物与残余物选择性反应，而不与离子源区域或真空室的组分反应。

公开(公告)号：US07816656B2

公开(公告)日：2010-10-19

申请号：US12256128

申请日：2008-10-22

Applicant: Christian Krueger ,  Rastislav Kocis ,  Marek Braun ,  Niels-Wieland Hauptmann ,  Heinz Seidel

Inventor： Christian Krueger ,  Rastislav Kocis ,  Marek Braun ,  Niels-Wieland Hauptmann ,  Heinz Seidel

IPC: H01J37/317 ,  H01J37/08 ,  H01J49/10

CPC classification number: H01J37/3171 ,  H01J37/08 ,  H01J2237/006 ,  H01J2237/0213 ,  H01J2237/022 ,  H01L21/26506 ,  H01L21/26513 ,  H01L29/6659 ,  H01L29/7833

Abstract: By operating an implantation tool with a source gas having a halogen fraction of 66 atomic percent or less relative to the total composition of the source gas, an in situ cleaning effect may be achieved while performing an implantation process.

Abstract translation: 通过操作具有相对于源气体的总组成具有66原子百分比或更小的卤素部分的源气体的植入工具，可以在执行注入过程时实现原位清洁效果。

公开(公告)号：US07812321B2

公开(公告)日：2010-10-12

申请号：US12137225

申请日：2008-06-11

Applicant: Peter Kurunczi ,  Rajesh Dorai ,  Costel Biloiu ,  Wilhelm Platow

Inventor： Peter Kurunczi ,  Rajesh Dorai ,  Costel Biloiu ,  Wilhelm Platow

IPC: H01J27/00 ,  H01J27/24 ,  H01T23/00

CPC classification number: H01J37/08 ,  H01J27/08 ,  H01J27/16 ,  H01J37/3171 ,  H01J2237/061 ,  H01J2237/0817 ,  H01J2237/082 ,  H01J2237/0827 ,  H01J2237/304

Abstract: Techniques for providing a multimode ion source are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation comprising an ion source that operates in multiple modes such that a first mode is an arc-discharge mode and a second mode is an RF mode.

Abstract translation: 公开了提供多模离子源的技术。 在一个特定示例性实施例中，可以将技术实现为用于离子注入的装置，其包括以多种模式操作的离子源，使得第一模式是电弧放电模式，而第二模式是RF模式。

公开(公告)号：US07812320B2

公开(公告)日：2010-10-12

申请号：US11521534

申请日：2006-09-15

Applicant: Su-han Yun ,  Jong-hyun Yang ,  Do-in Bae ,  Seong-gu Kim

Inventor： Su-han Yun ,  Jong-hyun Yang ,  Do-in Bae ,  Seong-gu Kim

IPC: H01J27/00

CPC classification number: H01J27/08 ,  H01J37/08 ,  H01J2237/082 ,  H01J2237/083 ,  H01J2237/31701

Abstract: An ion source element, an ion implanter having the ion source element and a method of modifying the ion source element are provided. In the ion source element, a chamber may have a cavity divided into a plurality of inner sections configured substantially perpendicularly to an axis defined through centers of ends of the cavity. The larger inner sections may be at, or near, a center of the cavity and become smaller toward the ends of the cavity. A filament may be disposed at one end of the chamber to emit thermal electrons. A repeller may extend into the chamber through the other end of the chamber. An inlet may be formed in a first cavity wall to introduce gas having a dopant species into the chamber. A beam slit may be formed in a second cavity wall, opposite the inlet, of the chamber to extract an ionized species of the gas from the chamber.

Abstract translation: 提供离子源元件，具有离子源元素的离子注入机和修改离子源元件的方法。 在离子源元件中，腔室可以具有被分成多个内部部分的空腔，该多个内部部分基本上垂直于通过腔的端部中心限定的轴线。 更大的内部部分可以在空腔的中心处或附近，并且朝向空腔的端部变小。 灯丝可以设置在室的一端以发射热电子。 排斥器可以通过腔室的另一端延伸到腔室中。 入口可以形成在第一空腔壁中以将具有掺杂剂物质的气体引入室中。 可以在室的与入口相对的第二空腔壁中形成梁狭缝，以从室提取气体的离子化物质。

公开(公告)号：US20100243919A1

公开(公告)日：2010-09-30

申请号：US12415755

申请日：2009-03-31

Applicant: John J. Hautala ,  Nathan E. Baxter

Inventor： John J. Hautala ,  Nathan E. Baxter

IPC: A61N5/00

CPC classification number: H01J37/317 ,  H01J27/026 ,  H01J37/08 ,  H01J37/3171 ,  H01J37/3178 ,  H01J2237/0812 ,  H01J2237/316 ,  H01J2237/3165 ,  H01J2237/31701 ,  H01J2237/31732

Abstract: A method of modifying a material layer on a substrate is described. The method comprises forming the material layer on the substrate. Thereafter, the method comprises establishing a gas cluster ion beam (GCIB) having an energy per atom ratio ranging from about 0.25 eV per atom to about 100 eV per atom, and modifying the material layer by exposing the material layer to the GCIB.

Abstract translation: 描述了改变衬底上的材料层的方法。 该方法包括在基底上形成材料层。 此后，该方法包括建立具有每原子约0.25eV至约100eV /原子比的每原子比能量的气体簇离子束（GCIB），以及通过将材料层暴露于GCIB来修饰该材料层。