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公开(公告)号：US09165502B2
公开(公告)日：2015-10-20
申请号：US14540326
申请日：2014-11-13
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake
CPC classification number: G09G3/3208 , G09G3/2003 , G09G3/3233 , G09G2330/021 , H01L27/1225 , H01L27/3262 , H01L27/3276 , H01L29/78609 , H01L29/7869 , H01L29/78693 , H01L29/78696
Abstract: Objects are to provide a display device the power consumption of which is reduced, to provide a self-luminous display device the power consumption of which is reduced and which is capable of long-term use in a dark place. A circuit is formed using a thin film transistor in which a highly-purified oxide semiconductor is used and a pixel can keep a certain state (a state in which a video signal has been written). As a result, even in the case of displaying a still image, stable operation is easily performed. In addition, an operation interval of a driver circuit can be extended, which results in a reduction in power consumption of a display device. Moreover, a light-storing material is used in a pixel portion of a self-luminous display device to store light, whereby the display device can be used in a dark place for a long time.
Abstract translation: 目的是提供一种降低功耗的显示装置，以提供其功耗降低并且能够在黑暗处长期使用的自发光显示装置。 使用其中使用高度纯化的氧化物半导体并且像素可以保持一定状态（已经写入视频信号的状态）的薄膜晶体管形成电路。 结果，即使在显示静止图像的情况下，也能够容易地进行稳定的动作。 此外，可以延长驱动电路的操作间隔，这导致显示装置的功耗的降低。 此外，在自发光显示装置的像素部分中使用光存储材料来存储光，由此显示装置可以在黑暗的地方长时间使用。
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222.发明授权公开(公告)号：US09147706B2
公开(公告)日：2015-09-29
申请号：US13898716
申请日：2013-05-21
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Jun Koyama , Shunpei Yamazaki
IPC: H01L27/146
CPC classification number: G06F3/042 , G02F1/13338 , H01L27/1446 , H01L27/1461 , H01L27/14641 , H01L27/14678 , H01L31/105
Abstract: In a display portion of a liquid crystal display device, the dead space corresponding to a unit pixel is reduced while the aperture ratio of the unit pixel is increased. One amplifier circuit portion is shared by a plurality of unit pixels, so that the area of the amplifier circuit portion corresponding to the unit pixel is reduced and the aperture ratio of the unit pixel is increased. In addition, when the amplifier circuit portion is shared by a larger number of unit pixels, a photosensor circuit corresponding to the unit pixel can be prevented from increasing in area even with an increase in photosensitivity. Furthermore, an increase in the aperture ratio of the unit pixel results in a reduction in the power consumption of a backlight in a liquid crystal display device.
Abstract translation: 在液晶显示装置的显示部分中，与单位像素对应的静止空间减小，同时单位像素的开口率增加。 一个放大器电路部分由多个单位像素共享，使得与单位像素相对应的放大器电路部分的面积减小，单位像素的开口率增加。 此外，当放大器电路部分被更多数量的单位像素共享时，即使随着光敏度的增加，也可以防止与单位像素相对应的光传感器电路的面积增加。 此外，单位像素的开口率的增加导致液晶显示装置中的背光的功耗的降低。
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公开(公告)号：US09136391B2
公开(公告)日：2015-09-15
申请号：US14472605
申请日：2014-08-29
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Jun Koyama
IPC: H01L29/78 , H01L29/786 , H03K17/082 , H01L29/06 , H01L27/12
CPC classification number: H01L29/7869 , H01L27/1225 , H01L27/1255 , H01L29/045 , H01L29/0657 , H01L29/1033 , H01L29/24 , H01L29/45 , H01L29/78645 , H03K17/0822
Abstract: The semiconductor device includes a power element which is in an on state when voltage is not applied to a gate, a switching field-effect transistor for applying first voltage to the gate of the power element, and a switching field-effect transistor for applying voltage lower than the first voltage to the gate of the power element. The switching field-effect transistors have small off-state current.
Abstract translation: 该半导体器件包括：功率元件，其在不向栅极施加电压时处于导通状态，用于向功率元件的栅极施加第一电压的开关场效应晶体管，以及用于施加电压的开关场效应晶体管 低于功率元件的栅极的第一电压。 开关场效应晶体管具有小的截止电流。
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公开(公告)号：US09123854B2
公开(公告)日：2015-09-01
申请号：US14032220
申请日：2013-09-20
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Shunpei Yamazaki , Jun Koyama , Kunitaka Yamamoto , Toshimitsu Konuma
IPC: H01L31/0376 , H01L33/08 , H01L29/423 , H01L29/786 , H01L27/12 , H01L27/32 , H01L51/52
CPC classification number: H01L33/08 , H01L27/1218 , H01L27/1255 , H01L27/322 , H01L27/3244 , H01L27/3248 , H01L27/3262 , H01L29/42384 , H01L29/78621 , H01L29/78627 , H01L29/78645 , H01L29/78696 , H01L51/5237 , H01L51/524 , H01L51/5246 , H01L51/5259 , H01L51/529 , H01L2251/5315 , H01L2924/0002 , H01L2924/00
Abstract: An object of the present invention is to provide an EL display device having a high operation performance and reliability.The switching TFT 201 formed within a pixel has a multi-gate structure, which is a structure which imposes an importance on reduction of OFF current value. Further, the current control TFT 202 has a channel width wider than that of the switching TFT to make a structure appropriate for flowing electric current. Morever, the LDD region 33 of the current control TFT 202 is formed so as to overlap a portion of the gate electrode 35 to make a structure which imposes importance on prevention of hot carrier injection and reduction of OFF current value.
Abstract translation: 本发明的目的是提供一种具有高操作性能和可靠性的EL显示装置。 在像素内形成的开关TFT201具有多栅极结构，这是对减小OFF电流值有重要意义的结构。 此外，电流控制TFT202具有比开关TFT宽的沟道宽度，以形成适于流动电流的结构。 另外，电流控制TFT202的LDD区域33形成为与栅电极35的一部分重叠，形成对防止热载流子注入和关断电流值的重要性的结构。
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公开(公告)号：US09105511B2
公开(公告)日：2015-08-11
申请号：US14336107
申请日：2014-07-21
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Jun Koyama , Kiyoshi Kato
IPC: H01L27/108 , H01L29/94 , H01L27/115 , G11C11/405 , G11C16/04 , H01L27/105 , H01L27/118 , H01L27/12 , H01L29/786 , H01L21/822 , H01L27/06 , H01L29/78
CPC classification number: H01L27/1052 , G11C11/405 , G11C16/0433 , G11C2211/4016 , H01L21/8221 , H01L27/0688 , H01L27/105 , H01L27/108 , H01L27/115 , H01L27/11551 , H01L27/1156 , H01L27/11803 , H01L27/1207 , H01L27/1225 , H01L27/124 , H01L27/1255 , H01L29/16 , H01L29/24 , H01L29/247 , H01L29/7833 , H01L29/7869 , H01L29/78693 , H01L29/78696
Abstract: An object is to provide a semiconductor device with a novel structure. The semiconductor device includes a first wiring; a second wiring; a third wiring; a fourth wiring; a first transistor having a first gate electrode, a first source electrode, and a first drain electrode; and a second transistor having a second gate electrode, a second source electrode, and a second drain electrode. The first transistor is provided in a substrate including a semiconductor material. The second transistor includes an oxide semiconductor layer.
Abstract translation: 目的是提供具有新颖结构的半导体器件。 半导体器件包括第一布线; 第二布线 第三线; 第四布线 具有第一栅电极，第一源电极和第一漏电极的第一晶体管; 以及具有第二栅电极，第二源电极和第二漏电极的第二晶体管。 第一晶体管设置在包括半导体材料的衬底中。 第二晶体管包括氧化物半导体层。
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Patent Agency Ranking
公开(公告)号：US20150215999A1
公开(公告)日：2015-07-30
申请号：US14684685
申请日：2015-04-13
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Mitsuaki Osame , Jun Koyama
IPC: H05B33/08
CPC classification number: H05B33/08 , H01L27/124 , H05B33/0812 , H05B33/0896
Abstract: The present invention is characterized in that a transistor with its L/W set to 10 or larger is employed, and that |VDS| of the transistor is set equal to or larger than 1 V and equal to or less than |VGS−Vth|. The transistor is used as a resistor so that the resistance of a light emitting element can be held by the transistor. This slows down an increase in internal resistance of the light emitting element and the resultant current value reduction. Accordingly, a change with time in light emission luminance is reduced and the reliability is improved.
Abstract translation: 本发明的特征在于采用其L / W设定为10以上的晶体管，| VDS | 被设定为等于或大于1V且等于或小于| VGS-Vth |。 晶体管用作电阻器，使得发光元件的电阻可以由晶体管保持。 这减慢了发光元件的内阻的增加和合成的电流值的降低。 因此，降低发光亮度随时间的变化，提高可靠性。
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公开(公告)号：US09082677B2
公开(公告)日：2015-07-14
申请号：US13760121
申请日：2013-02-06
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Jun Koyama , Masato Yonezawa , Hajime Kimura , Yu Yamazaki
CPC classification number: H01L27/3269 , G09G3/3258 , G09G3/3266 , G09G2300/0809 , G09G2310/0286 , G09G2310/0291 , G09G2320/0646 , H01L27/14623 , H01L27/14632 , H01L27/14643 , H01L27/14678 , H01L27/14687 , H01L27/15 , H01L27/323 , H01L27/3234 , H01L27/3244 , H01L27/3246 , H01L27/3248 , H01L27/3258 , H01L27/3262 , H01L27/3265 , H01L27/3276 , H01L29/78672 , H01L51/0097 , H01L2251/5338 , H04N3/155 , H04N5/2251 , H04N5/374
Abstract: An area sensor of the present invention has a function of displaying an image in a sensor portion by using light-emitting elements and a reading function using photoelectric conversion devices. Therefore, an image read in the sensor portion can be displayed thereon without separately providing an electronic display on the area sensor. Furthermore, a photoelectric conversion layer of a photodiode according to the present invention is made of an amorphous silicon film and an N-type semiconductor layer and a P-type semiconductor layer are made of a polycrystalline silicon film. The amorphous silicon film is formed to be thicker than the polycrystalline silicon film. As a result, the photodiode according to the present invention can receive more light.
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公开(公告)号：US09047799B2
公开(公告)日：2015-06-02
申请号：US13864752
申请日：2013-04-17
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Jun Koyama , Yasuyuki Arai , Ikuko Kawamata , Atsushi Miyaguchi , Yoshitaka Moriya
CPC classification number: G06F1/1652 , G02F1/133305 , G02F1/13452 , G02F1/1368 , G06F1/1616 , G06F1/1635 , G06F1/1643 , G06F1/1647 , G06F3/1423 , G06F3/147 , G09G3/20 , G09G3/2096 , G09G3/3225 , G09G3/344 , G09G3/3648 , G09G5/003 , G09G2300/08 , G09G2310/0218 , G09G2310/0267 , G09G2310/0275 , G09G2310/0281 , G09G2330/02 , G09G2330/021 , G09G2360/144 , G09G2380/02 , G09G2380/14
Abstract: An e-book reader in which destruction of a driver circuit at the time when a flexible panel is handled is inhibited. In addition, an e-book reader having a simplified structure. A plurality of flexible display panels each including a display portion in which display control is performed by a scan line driver circuit and a signal line driver circuit, and a binding portion fastening the plurality of display panels together are included. The signal line driver circuit is provided inside the binding portion, and the scan line driver circuit is provided at the edge of the display panel in a direction perpendicular to the binding portion.
Abstract translation: 禁止在处理柔性面板时破坏驱动电路的电子书阅读器。 另外，具有简化结构的电子书阅读器。 包括多个柔性显示面板，每个柔性显示面板包括由扫描线驱动电路和信号线驱动电路进行显示控制的显示部分和将多个显示面板固定在一起的装订部分。 信号线驱动电路设置在装订部分的内部，扫描线驱动电路在垂直于装订部分的方向设在显示面板的边缘。
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公开(公告)号：US09006757B2
公开(公告)日：2015-04-14
申请号：US13955154
申请日：2013-07-31
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Mitsuaki Osame , Jun Koyama
CPC classification number: H05B33/08 , H01L27/124 , H05B33/0812 , H05B33/0896
Abstract: The present invention is characterized in that a transistor with its L/W set to 10 or larger is employed, and that |VDS| of the transistor is set equal to or larger than 1 V and equal to or less than |VGS−Vth|. The transistor is used as a resistor so that the resistance of a light emitting element can be held by the transistor. This slows down an increase in internal resistance of the light emitting element and the resultant current value reduction. Accordingly, a change with time in light emission luminance is reduced and the reliability is improved.
Abstract translation: 本发明的特征在于采用其L / W设定为10以上的晶体管，| VDS | 被设定为等于或大于1V且等于或小于| VGS-Vth |。 晶体管用作电阻器，使得发光元件的电阻可以由晶体管保持。 这减慢了发光元件的内阻的增加和合成的电流值的降低。 因此，降低发光亮度随时间的变化，提高可靠性。
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公开(公告)号：US08995174B2
公开(公告)日：2015-03-31
申请号：US14037450
申请日：2013-09-26
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Jun Koyama
IPC: G11C11/24 , G11C7/10 , G11C5/14 , G11C8/00 , H03K19/00 , G11C8/04 , H03K3/012 , H03K3/037 , H01L21/8258 , H01L27/088 , H01L29/786 , H01L27/12 , H01L21/8234
CPC classification number: H03K3/012 , G11C5/147 , G11C8/04 , H01L21/823412 , H01L21/8258 , H01L27/0629 , H01L27/088 , H01L27/1225 , H01L29/045 , H01L29/7869 , H01L29/78693 , H03K3/0372 , H03K3/0375 , H03K19/0008
Abstract: A semiconductor device includes NAND gates and switches to form a circuit to hold data, and a capacitor electrically connected to the circuit via a transistor to store the data held in the circuit. The transistor has a channel formation region including an oxide semiconductor.
Abstract translation: 半导体器件包括NAND门和开关以形成保持数据的电路，以及经由晶体管电连接到电路的电容器，用于存储保持在电路中的数据。 晶体管具有包括氧化物半导体的沟道形成区域。
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