Abstract:
A tunable radio frequency (RF) duplexer and duplexing methods are disclosed. The tunable RF duplexer includes a first hybrid coupler, a second hybrid coupler, and an RF filter circuit. The first hybrid coupler is operable to split the RF transmission input signal into first and second RF quadrature hybrid transmission signals (QHTSs). The second hybrid coupler is operable to split the RF receive input signal into first and second RF quadrature hybrid receive signals (QHRSs). The RF filter circuit is operable to pass the first and second RF QHTSs to the second hybrid coupler and to reflect the first and second RF QHRSs back to the second hybrid coupler. Additionally, the second hybrid coupler is configured to combine the first and second RF QHTSs into an RF transmission output signal and to combine the first and second RF QHRSs into an RF receive output signal.
Abstract:
A tunable radio frequency (RF) duplexer is disclosed. The tunable RF duplexer includes a first hybrid coupler, a second hybrid coupler, and an RF filter circuit. The first hybrid coupler is operable to split an RF receive input signal into first and second RF quadrature hybrid receive signals (QHRSs). The first hybrid coupler is also operable to split an RF transmission input signal into first and second RF quadrature hybrid transmission signals (QHTSs). The RF filter circuit is operable to pass the first and second RF QHRSs to the second hybrid coupler and to reflect the first and second RF QHTSs back to the first hybrid coupler. Additionally, the second hybrid coupler is configured to combine the first and second RF QHRSs into an RF receive output signal, while the first hybrid coupler is configured to combine the first and second RF QHTSs into an RF transmission output signal.
Abstract:
Differential power amplifier circuitry includes a differential transistor pair, an input transformer, and biasing circuitry. The base contact of each transistor in the differential transistor pair may be coupled to the input transformer through a coupling capacitor. The coupling capacitors may be designed to resonate with the input transformer about a desired frequency range, thereby passing desirable signals to the differential transistor pair while blocking undesirable signals. The biasing circuitry may include a pair of emitter follower transistors, each coupled at the emitter to the base contact of each one of the transistors in the differential transistor pair and adapted to bias the differential transistor pair to maximize efficiency and stability.
Abstract:
This disclosure relates to radio frequency (RF) power converters and methods of operating the same. In one embodiment, an RF power converter includes an RF switching converter, a low-drop out (LDO) regulation circuit, and an RF filter. The RF filter is coupled to receive a pulsed output voltage from the RF switching converter and a supply voltage from the LDO regulation circuit. The RF filter is operable to alternate between a first RF filter topology and a second RF filter topology. In the first RF filter topology, the RF filter is configured to convert the pulsed output voltage from a switching circuit into the supply voltage. The RF filter in the second RF filter topology is configured to filter the supply voltage from the LDO regulation circuit to reduce a ripple variation in a supply voltage level of the supply voltage. As such, the RF filter provides greater versatility.
Abstract:
This disclosure relates to radio frequency (RF) power converters and methods of operating the same. In one embodiment, an RF power converter includes an RF switching converter, a low-drop out (LDO) regulation circuit, and an RF filter. The RF filter is coupled to receive a pulsed output voltage from the RF switching converter and a supply voltage from the LDO regulation circuit. The RF filter is operable to alternate between a first RF filter topology and a second RF filter topology. In the first RF filter topology, the RF filter is configured to convert the pulsed output voltage from a switching circuit into the supply voltage. The RF filter in the second RF filter topology is configured to filter the supply voltage from the LDO regulation circuit to reduce a ripple variation in a supply voltage level of the supply voltage. As such, the RF filter provides greater versatility.
Abstract:
A baseband PA predistortion module, which includes a baseband combiner, a baseband PA correction circuit, and a baseband filter, is disclosed. The baseband PA correction circuit replicates behavior of an RF PA by processing a modulation data signal to provide a predistortion data signal. The behavior of the RF PA includes distortion. The modulation data signal is representative of an RF input signal to an RF PA and the predistortion data signal is representative of a correction needed at an output of the RF PA. The baseband filter receives and filters the predistortion data signal to provide a reduced predistortion data signal, such that a low frequency content of the reduced predistortion data signal is less than a low frequency content of the predistortion data signal. The baseband combiner receives and combines the modulation data signal and the reduced predistortion data signal to provide a baseband transmit signal.
Abstract:
RF communications circuitry, which includes a first group of RF power amplifier circuits and a first weakly coupled RF network, is disclosed. The first group of RF power amplifier circuits includes a first RF power amplifier circuit, which receives and amplifies a first RF amplifier input signal to provide a first RF amplifier output signal, and a second RF power amplifier circuit, which receives and amplifies a second RF amplifier input signal to provide a second RF amplifier output signal. The first weakly coupled RF network includes a first pair of weakly coupled RF resonators coupled to the first RF power amplifier circuit and a second pair of weakly coupled RF resonators coupled to the second RF power amplifier circuit.
Abstract:
RF front-end circuitry, which includes RF switching and duplexing circuitry, a first RF diplexer, and a second RF diplexer, is disclosed. The RF switching and duplexing circuitry operates in one of a group of RF transmit modes, such that the group of RF transmit modes includes at least one transmit uplink carrier aggregation mode. The RF switching and duplexing circuitry provides at least one RF transmit signal based on the one of the group of RF transmit modes. The first RF diplexer is coupled between the RF switching and duplexing circuitry and a primary RF antenna. The second RF diplexer is coupled between the RF switching and duplexing circuitry and an auxiliary RF antenna.
Abstract:
Antenna tuning circuitry includes an antenna tuning node, an antenna tuning switch, and a resonant tuning circuit. The antenna tuning node is coupled to a resonant conduction element of an antenna. The antenna tuning switch and the resonant tuning circuit are coupled in series between the antenna tuning switch and the antenna tuning node, such that the resonant tuning circuit is between the antenna tuning node and the antenna tuning switch. The resonant tuning circuit is configured to resonate at one or more harmonic frequencies generated by the antenna tuning switch such that a high impedance path is formed between the antenna tuning switch and the antenna tuning node at harmonic frequencies generated by the antenna tuning switch. Accordingly, harmonic interference generated by the antenna tuning switch is prevented from reaching the antenna, while simultaneously allowing for tuning of the antenna.
Abstract:
A shielded electronic module is formed on a substrate. The substrate has a component area and one or more electronic components attached to the component area. One set of conductive pads may be attached to the component area and another set of conductive pads may be provided on the electronic component. The conductive pads on the component area are electrically coupled to the conductive pads of the electronic component by a conductive layer. A first insulating layer is provided over the component area and underneath the conductive layer that may insulate the electronic component and the substrate from the conductive layer. A second insulating layer is provided over the first insulating layer that covers at least the conductive layer. In this manner, the conductive layer is isolated from an electromagnetic shield formed over the component area.