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    Apparatus and methods for upgraded substrate processing system with microwave plasma source
    21.
    发明授权
    Apparatus and methods for upgraded substrate processing system with microwave plasma source 有权
    具有微波等离子体源的升级基板处理系统的装置和方法

    公开(公告)号：US06361707B1

    公开(公告)日：2002-03-26

    申请号：US09660322

    申请日：2000-09-12

    Applicant: Tsutomu Tanaka ,  Mukul Kelkar ,  Kevin Fairbairn ,  Hari Ponnekanti ,  David Cheung

    Inventor： Tsutomu Tanaka ,  Mukul Kelkar ,  Kevin Fairbairn ,  Hari Ponnekanti ,  David Cheung

    IPC: H01L2100

    CPC classification number: H01J37/32862 ,  C23C16/511 ,  C23C16/52 ,  H01J37/32192 ,  H01J37/32357

    Abstract: An apparatus and methods for an upgraded CVD system that provides a plasma for efficiently cleaning a chamber, according to a specific embodiment. Etching or depositing a layer onto a substrate also may be achieved using the upgraded CVD system of the present invention. In a specific embodiment, the present invention provides an easily removable, conveniently handled, and relatively inexpensive microwave plasma source as a retrofit for or a removable addition to existing CVD apparatus. In a preferred embodiment, the remote microwave plasma source efficiently provides a plasma without need for liquid-cooling the plasma applicator tube. In another embodiment, the present invention provides an improved CVD apparatus or retrofit of existing CVD apparatus capable of producing a plasma with the ability to efficiently clean the chamber when needed.

    Abstract translation: 根据具体实施例的用于提供用于有效清洁腔室的等离子体的升级CVD系统的装置和方法。 使用本发明的升级的CVD系统也可以实现在基板上的蚀刻或沉积层。 在一个具体实施方案中，本发明提供了一种易于拆卸，方便处理且相对便宜的微波等离子体源，作为对现有CVD设备的改进或可移除的添加。 在优选实施例中，远程微波等离子体源有效地提供等离子体，而不需要等离子体施加管的液体冷却。 在另一个实施方案中，本发明提供了一种改进的CVD装置或改进现有的CVD装置，其能够产生等离子体，其能够在需要时有效地清洁腔室。

    Method and apparatus for applying films using reduced deposition rates
    22.
    发明授权
    Method and apparatus for applying films using reduced deposition rates 有权
    降低沉积速率的方法和设备

    公开(公告)号：US06324439B1

    公开(公告)日：2001-11-27

    申请号：US09573499

    申请日：2000-05-16

    Applicant: David Cheung ,  Joe Feng ,  Madhu Deshpande ,  Wai-Fan Yau ,  Judy H. Huang

    Inventor： David Cheung ,  Joe Feng ,  Madhu Deshpande ,  Wai-Fan Yau ,  Judy H. Huang

    IPC: G06F1900

    CPC classification number: C23C16/308 ,  C23C16/345 ,  C23C16/52

    Abstract: This invention provides a stable process for depositing films which include silicon and nitrogen, such as antireflective coatings of silicon oxynitride. Nitrogen is employed to permit lower flow rates of the process gas containing silicon, thereby reducing the deposition rate and providing better control of film thickness. Additionally, the use of nitrogen stabilizes the process, improving film uniformity, and provides a higher-quality film. The invention is capable of providing more accurate and easier fabrication of structures requiring uniformly thin films containing silicon, nitrogen, and, optionally, oxygen, such as antireflective coatings.

    Abstract translation: 本发明提供一种用于沉积包括硅和氮的膜的稳定方法，例如氮氧化硅的抗反射涂层。 使用氮气以允许含硅工艺气体的较低流速，从而降低沉积速率并提供更好的膜厚度控制。 另外，氮的使用可以稳定工艺，提高膜的均匀性，并提供更高质量的膜。 本发明能够提供更精确和更容易地制造需要均匀的含有硅，氮和任选的氧的薄膜如薄膜的结构，例如抗反射涂层。

    Nano-porous copolymer films having low dielectric constants
    24.
    发明授权
    Nano-porous copolymer films having low dielectric constants 有权
    具有低介电常数的纳米多孔共聚物膜

    公开(公告)号：US6107184A

    公开(公告)日：2000-08-22

    申请号：US207791

    申请日：1998-12-09

    Applicant: Robert P. Mandal ,  David Cheung ,  Peter Wai-Man Lee ,  Chi-I Lang

    Inventor： Robert P. Mandal ,  David Cheung ,  Peter Wai-Man Lee ,  Chi-I Lang

    IPC: B05D7/24 ,  C08G61/02 ,  H01L21/283 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L21/4763

    CPC classification number: B05D1/60 ,  C08G61/025 ,  H01L21/312 ,  C08G2261/3424 ,  H01L21/31695 ,  Y10S438/958

    Abstract: A method and apparatus for forming thin copolymer layers having low dielectric constants on semiconductor substrates includes in situ formation of p-xylylenes, or derivatives thereof, from solid or liquid precursors such as cyclic p-xylylene dimer, p-xylene, 1,4-bis(formatomethyl)benzene, or 1,4-bis(N-methyl-aminomethyl)benzene. P-xylylene is copolymerized with a comonomer having labile groups that are converted to dispersed gas bubbles after the copolymer layer is deposited on the substrate. Preferred comonomers comprise diazocyclopentadienyl, diazoquinoyl, formyloxy, or glyoxyloyloxy groups.

    Abstract translation: 用于在半导体衬底上形成具有低介电常数的薄共聚物层的方法和装置包括从固体或液体前体如环状对二甲苯二聚物，对二甲苯，1,4-二甲苯二异氰酸酯原位形成对二甲苯或其衍生物， 双（格式甲基）苯或1,4-双（N-甲基 - 氨基甲基）苯。 在共聚物层沉积在基材上之后，将对二甲苯与具有不稳定基团的共聚单体共聚，转化成分散的气泡。 优选的共聚单体包括重氮环戊二烯基，重氮醌基，甲酰氧基或乙酰氧基合氧基。

    Process for depositing high deposition rate halogen-doped silicon oxide layer
    25.
    发明授权
    Process for depositing high deposition rate halogen-doped silicon oxide layer 失效
    用于沉积高沉积速率的卤素掺杂氧化硅层的工艺

    公开(公告)号：US6077764A

    公开(公告)日：2000-06-20

    申请号：US837641

    申请日：1997-04-21

    Applicant: Dian Sugiarto ,  Judy Huang ,  David Cheung

    Inventor： Dian Sugiarto ,  Judy Huang ,  David Cheung

    IPC: C23C16/40 ,  H01L21/316 ,  H01L21/44 ,  H01L21/4763

    CPC classification number: H01L21/02274 ,  C23C16/401 ,  H01L21/02131 ,  H01L21/31625

    Abstract: A silicon oxide film is deposited on a substrate by first introducing a process gas into a chamber. The process gas includes a gaseous source of silicon (such as silane), a gaseous source of fluorine (such as SiF.sub.4), a gaseous source of oxygen (such as nitrous oxide), and a gaseous source of nitrogen (such as N.sub.2). A plasma is formed from the process gas by applying a RF power component. Deposition is carried out at a rate of at least about 1.5 .mu.m/min. The resulting FSG film is stable and has a low dielectric constant.

    Abstract translation: 首先将工艺气体引入室中，将氧化硅膜沉积在衬底上。 工艺气体包括硅的气体源（例如硅烷），气体的氟源（例如SiF 4），气体的氧源（例如一氧化二氮）和气态的氮源（例如N 2）。 通过施加RF功率分量从处理气体形成等离子体。 以至少约1.5m / min的速率进行沉积。 所得的FSG膜是稳定的并且具有低的介电常数。

    Gas distribution for CVD systems
    28.
    发明授权
    Gas distribution for CVD systems 失效
    CVD系统的气体分布

    公开(公告)号：US5792269A

    公开(公告)日：1998-08-11

    申请号：US550668

    申请日：1995-10-31

    Applicant: Thomas E. Deacon ,  David Cheung ,  Peter Wai-Man Lee ,  Judy H. Huang

    Inventor： Thomas E. Deacon ,  David Cheung ,  Peter Wai-Man Lee ,  Judy H. Huang

    IPC: C23C16/44 ,  C23C16/455 ,  C23C16/00

    CPC classification number: C23C16/45565 ,  C23C16/455

    Abstract: A substrate processing system including a vacuum chamber; a pedestal which holds a substrate during processing; and a gas distribution structure which during processing is located adjacent to and distributes a process gas onto a surface of the substrate that is held on the pedestal for processing. The gas distribution structure includes a gas distribution faceplate including a plurality of gas distribution holes formed therethrough, wherein the holes of at least a first set of the plurality of holes pass through the faceplate at angles other than perpendicular to the surface of substrate.

    Abstract translation: 一种基板处理系统，包括真空室; 处理时保持基板的基座; 以及气体分配结构，其处理期间邻近并分配处理气体到保持在基座上的基板的表面上以进行处理。 气体分配结构包括：气体分配面板，其包括通过其形成的多个气体分配孔，其中至少第一组多个孔中的孔以垂直于衬底表面的角度穿过面板。

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