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    Lithographic method
    21.
    发明授权
    Lithographic method 有权
    平版印刷法

    公开(公告)号：US07989155B2

    公开(公告)日：2011-08-02

    申请号：US12065930

    申请日：2006-09-05

    Applicant: Peter Zandbergen ,  Jeroen H Lammers ,  David Van Steenwinckel

    Inventor： Peter Zandbergen ,  Jeroen H Lammers ,  David Van Steenwinckel

    IPC: G03F7/40 ,  G03F7/38

    CPC classification number: G03F7/0392 ,  G03F7/0382

    Abstract: The present invention provides a method of lithographic patterning. The method comprises: applying to a surface to be patterned a photoresist (18) comprising a polymer resin, a photocatalyst generator which generates a catalyst on exposure to actinic radiation, and a quencher; exposing the photoresist (18) to actinic radiation through a mask pattern (12); carrying out a post-exposure bake; and then developing the photoresist (18) with a developer to remove a portion of the photoresist which has been rendered soluble in the developer. Either the polymer resin is substantially insoluble in the developer prior to exposure to actinic radiation and rendered soluble in the developer by the action of the catalyst, and by the action of the quencher during the bake, or the polymer resin is soluble in the developer prior to exposure to actinic radiation and rendered substantially insoluble in the developer by the action of the catalyst, and by the action of the quencher during the bake.

    Abstract translation: 本发明提供一种平版印刷图案化方法。 该方法包括：向待图案化的表面施加包含聚合物树脂的光致抗蚀剂（18），在曝光于光化辐射时产生催化剂的光催化剂产生剂和猝灭剂; 通过掩模图案（12）将光致抗蚀剂（18）暴露于光化辐射; 进行曝光后烘烤; 然后用显影剂显影光致抗蚀剂（18）以除去已经溶解在显影剂中的一部分光致抗蚀剂。 聚合物树脂在暴露于光化辐射之前基本上不溶于显影剂，并且通过催化剂的作用并且通过猝灭剂在烘烤期间的作用而使其溶解在显影剂中，或者聚合物树脂可溶于显影剂前 暴露于光化辐射并且通过催化剂的作用基本上不溶于显影剂，并且通过在烘烤期间猝灭剂的作用。

    DOUBLE PATTERNING FOR LITHOGRAPHY TO INCREASE FEATURE SPATIAL DENSITY
    23.
    发明申请
    DOUBLE PATTERNING FOR LITHOGRAPHY TO INCREASE FEATURE SPATIAL DENSITY 有权
    用于提升特征空间密度的双重图案

    公开(公告)号：US20100028809A1

    公开(公告)日：2010-02-04

    申请号：US12514777

    申请日：2007-11-13

    Applicant: Anja Monique Vanleenhove ,  Peter Dirksen ,  David Van Steenwinckel ,  Gerben Doornbos ,  Casper Juffermans ,  Mark Van Dal

    Inventor： Anja Monique Vanleenhove ,  Peter Dirksen ,  David Van Steenwinckel ,  Gerben Doornbos ,  Casper Juffermans ,  Mark Van Dal

    IPC: G03F7/20

    CPC classification number: G03F7/0035 ,  G03F7/11 ,  H01L21/0271 ,  H01L21/0273 ,  H01L21/823821 ,  H01L29/66795 ,  H01L29/6681 ,  H01L29/785

    Abstract: A method of forming a pattern in at least one device layer in or on a substrate comprises: coating the device layer with a first photoresist layer; exposing the first photoresist using a first mask; developing the first photoresist layer to form a first pattern on the substrate; coating the substrate with a protection layer; treating the protection layer to cause a change therein where it is in contact with the first photoresist, to render the changed protection layer substantially immune to a subsequent exposure and/or developing step; coating the substrate with a second photoresist layer; exposing the second photoresist layer using a second mask; and developing the second photoresist layer to form a second pattern on the substrate without significantly affecting the first pattern in the first photoresist layer, wherein the first and second patterns together define interspersed features having a spartial frequency greater than that of the features defined in each of the first and second patterns separately. The process has particular utility in defining source, drain and fin features of finFET devices with a smaller feature size than otherwise achievable with the prevailing lithography tools.

    Abstract translation: 在衬底中或衬底上的至少一个器件层中形成图案的方法包括：用第一光致抗蚀剂层涂覆器件层; 使用第一掩模曝光第一光致抗蚀剂; 显影第一光致抗蚀剂层以在基底上形成第一图案; 用保护层涂覆基板; 处理保护层以在其中与第一光致抗蚀剂接触的地方发生变化，使得改变的保护层基本上不受随后的曝光和/或显影步骤的影响; 用第二光致抗蚀剂层涂覆基板; 使用第二掩模曝光所述第二光致抗蚀剂层; 并且显影所述第二光致抗蚀剂层以在所述衬底上形成第二图案，而不会显着影响所述第一光致抗蚀剂层中的所述第一图案，其中所述第一和第二图案一起限定散布特征，其间隔频率大于每个 第一和第二模式分开。 该方法在定义具有较小的特征尺寸的finFET器件的源极，漏极和鳍片特征方面具有特别的用途，而与主要的光刻工具不同。

    Display device
    24.
    发明授权
    Display device 有权
    显示设备

    公开(公告)号：US09081251B2

    公开(公告)日：2015-07-14

    申请号：US13056116

    申请日：2009-07-27

    Applicant: Benoit Bataillou ,  Radu Surdeanu ,  Pascal Bancken ,  David van Steenwinckel ,  Viet Nguyen Hoang

    Inventor： Benoit Bataillou ,  Radu Surdeanu ,  Pascal Bancken ,  David van Steenwinckel ,  Viet Nguyen Hoang

    IPC: G02F1/19 ,  G02F1/23

    CPC classification number: G02F1/19 ,  G02F1/0147 ,  G02F1/23 ,  G02F2203/10 ,  G09G2300/00

    Abstract: A display device comprises a substrate which carries an array of pixels. Each pixel comprises an array of apertures in the substrate, each aperture of the array having a maximum opening dimension less than the wavelength of the light to be transmitted through the aperture. The effective dielectric constant of the aperture and/or the dielectric constant of the substrate is varied, thereby to vary the light transmission characteristics of the pixel between transmission of at least one frequency in the visible spectrum and transmission of substantially no frequency in the visible spectrum.

    Abstract translation: 显示装置包括承载像素阵列的基板。 每个像素包括衬底中的孔阵列，阵列的每个孔具有小于要透过孔的光的波长的最大开口尺寸。 孔的有效介电常数和/或介质的介电常数发生变化，从而改变可见光谱中的至少一个频率的透射之间像素的透光特性以及可见光谱中基本上没有频率的透射 。

    Measuring apparatus
    26.
    发明授权
    Measuring apparatus 有权
    测量装置

    公开(公告)号：US08368877B2

    公开(公告)日：2013-02-05

    申请号：US13002017

    申请日：2009-07-01

    Applicant: Benoit Bataillou ,  Pascal Bancken ,  David van Steenwinckel ,  Viet Nguyen Hoang ,  Radu Surdeanu

    Inventor： Benoit Bataillou ,  Pascal Bancken ,  David van Steenwinckel ,  Viet Nguyen Hoang ,  Radu Surdeanu

    IPC: G01N33/48 ,  G01N21/01

    CPC classification number: C09K11/06 ,  G01N15/1459 ,  G01N21/45 ,  G01N2021/458

    Abstract: An apparatus comprising at least one measuring cell (10) is disclosed. The measuring cell comprises a first cavity (16 and a second cavity (18) perpendicular to the first cavity, the first cavity and the second cavity comprising an overlap at first respective ends and a reflective surface (20) at the opposite respective ends. A beam splitter (15) is located in the overlap and an electromagnetic radiation source (12) is arranged to project a beam of electromagnetic radiation onto the beam splitter (15) such that the beam is projected into each of the cavities. A phase detector (22) for detecting a phase difference between the respective electromagnetic radiation reflected by the first and second cavity (16; 18) is also provided. In addition, the apparatus has a fluid channel (26), at least a part of which runs parallel to the first cavity (16) such that the electromagnetic radiation projected into the first cavity extends into said part of the fluid channel. This allows for the interferometric detection of particles in the fluid channel.

    Abstract translation: 公开了一种包括至少一个测量单元（10）的装置。 所述测量单元包括第一空腔（16和垂直于所述第一空腔的第二空腔），所述第一空腔和所述第二空腔包括在第一相应端部处的重叠部分和在相对的相应端部处的反射表面（20） 分束器（15）位于重叠中，并且电磁辐射源（12）被布置成将电磁辐射束投射到分束器（15）上，使得射束投射到每个空腔中。相位检测器 还提供了用于检测由第一和第二空腔（16; 18）反射的各个电磁辐射之间的相位差的装置（22），另外，该装置具有流体通道（26），其流体通道的至少一部分平行于 所述第一空腔（16）使得投射到所述第一空腔中的电磁辐射延伸到所述流体通道的所述部分中，这允许对所述流体通道中的颗粒进行干涉检测。

    MEASURING APPARATUS
    29.
    发明申请
    MEASURING APPARATUS 有权
    测量装置

    公开(公告)号：US20110109897A1

    公开(公告)日：2011-05-12

    申请号：US13002017

    申请日：2009-07-01

    Applicant: Benoit Bataillou ,  Pascal Bancken ,  David van Steenwinckel ,  Viet Nguyen Hoang ,  Radu Surdeanu

    Inventor： Benoit Bataillou ,  Pascal Bancken ,  David van Steenwinckel ,  Viet Nguyen Hoang ,  Radu Surdeanu

    IPC: G01N33/48 ,  G01B9/02 ,  G01N21/45

    CPC classification number: C09K11/06 ,  G01N15/1459 ,  G01N21/45 ,  G01N2021/458

    Abstract: An apparatus comprising at least one measuring cell (10) is disclosed. The measuring cell comprises a first cavity (16 and a second cavity (18) perpendicular to the first cavity, the first cavity and the second cavity comprising an overlap at first respective ends and a reflective surface (20) at the opposite respective ends. A beam splitter (15) is located in the overlap and an electromagnetic radiation source (12) is arranged to project a beam of electromagnetic radiation onto the beam splitter (15) such that the beam is projected into each of the cavities. A phase detector (22) for detecting a phase difference between the respective electromagnetic radiation reflected by the first and second cavity (16; 18) is also provided. In addition, the apparatus has a fluid channel (26), at least a part of which runs parallel to the first cavity (16) such that the electromagnetic radiation projected into the first cavity extends into said part of the fluid channel. This allows for the interferometric detection of particles in the fluid channel.

    Abstract translation: 公开了一种包括至少一个测量单元（10）的装置。 所述测量单元包括第一空腔（16和垂直于所述第一空腔的第二空腔），所述第一空腔和所述第二空腔包括在第一相应端部处的重叠部分和在相对的相应端部处的反射表面（20） 分束器（15）位于重叠中，并且电磁辐射源（12）被布置成将电磁辐射束投射到分束器（15）上，使得射束投射到每个空腔中。相位检测器 还提供了用于检测由第一和第二空腔（16; 18）反射的各个电磁辐射之间的相位差的装置（22），另外，该装置具有流体通道（26），其流体通道的至少一部分平行于 所述第一空腔（16）使得投射到所述第一空腔中的电磁辐射延伸到所述流体通道的所述部分中，这允许对所述流体通道中的颗粒进行干涉检测。

    Lithographic method
    30.
    发明授权
    Lithographic method 有权
    平版印刷法

    公开(公告)号：US07897323B2

    公开(公告)日：2011-03-01

    申请号：US11720315

    申请日：2005-11-10

    Applicant: David Van Steenwinckel ,  Peter Zandbergen

    Inventor： David Van Steenwinckel ,  Peter Zandbergen

    IPC: G03F7/26

    CPC classification number: G03F7/30 ,  G03F7/095 ,  G03F7/32

    Abstract: A method of achieving frequency doubled lithographic patterning is described. An optical pattern (16) having a first period (p1) is used to expose conventional acid-catalysed photoresist (18) on substrate (20), leaving regions of high exposure (24), regions of low exposure (26) and intermediate regions (22). Processing proceeds leaving regions (24) which received high exposure very polar, i.e. hydrophilic, regions (26) of low exposure very apolar, i.e. hydrophobic, and the intermediate regions having intermediate polarity. A developer of intermediate polarity such as propylene glycol methyl ether acetate is then used to dissolve only the intermediate regions (22) leaving photoresist patterned to have a pitch (p2) half that of the optical period (p1). Alternatively, the photoresist is removed from the apolar and polar regions leaving only the intermediate regions (22) again with the same pitch (p2) half that of the optical period (p1).

    Abstract translation: 描述了实现倍频光刻图案的方法。 使用具有第一周期（p1）的光学图案（16）来暴露基底（20）上的常规酸催化光致抗蚀剂（18），留下高曝光区域（24），低曝光区域（26）和中间区域 （22）。 处理进行离开区域（24），其接收高暴露非常极性，即亲水性低暴露非极性（即疏水性）的区域（26），并且具有中等极性的中间区域。 然后使用中等极性的显影剂，例如丙二醇甲基醚乙酸酯仅溶解中间区域（22），留下光刻胶图案化成具有光学期间（p1）的间距（p2）的一半。 或者，光致抗蚀剂从非极性区域和极性区域移除，仅再次以与光学周期（p1）相同的间距（p2）为中间区域（22）。

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