公开(公告)号：US20090294926A1

公开(公告)日：2009-12-03

申请号：US12538193

申请日：2009-08-10

Applicant: June Cline ,  Dinh Dang ,  Mark Lagerquist ,  Jeffrey C. Maling ,  Lisa Y. Ninomiya ,  Bruce W. Porth ,  Steven M. Shank ,  Jessica A. Trapasso

Inventor： June Cline ,  Dinh Dang ,  Mark Lagerquist ,  Jeffrey C. Maling ,  Lisa Y. Ninomiya ,  Bruce W. Porth ,  Steven M. Shank ,  Jessica A. Trapasso

IPC: H01L29/06

CPC classification number: H01L21/31116 ,  H01L21/3081 ,  H01L21/3086 ,  H01L29/66181 ,  Y10S438/952

Abstract: A semiconductor structure. A hard mask layer is on a top substrate surface of a semiconductor substrate. The hard mask layer includes a hard mask layer opening through which a portion of the top substrate surface is exposed to a surrounding ambient. The hard mask layer includes a pad oxide layer on the top substrate surface, a nitride layer on the pad oxide layer, a BSG (borosilicate glass) layer on top of the nitride layer, and an ARC (anti-reflective coating) layer on top of the BSG layer. A BSG side wall surface of the BSG layer is exposed to the surrounding ambient through the hard mask layer opening.

Abstract translation: 半导体结构。 硬掩模层位于半导体衬底的顶部衬底表面上。 硬掩模层包括硬掩模层开口，顶部衬底表面的一部分暴露于周围的环境中。 硬掩模层包括在顶部衬底表面上的衬垫氧化物层，衬垫氧化物层上的氮化物层，在氮化物层的顶部上的BSG（硼硅酸盐玻璃）层，以及顶部上的ARC（抗反射涂层） 的BSG层。 BSG层的BSG侧壁表面通过硬掩模层开口暴露于周围环境。

公开(公告)号：US20090090970A1

公开(公告)日：2009-04-09

申请号：US11868564

申请日：2007-10-08

Applicant: Dinh Dang ,  Thai Doan ,  Jessica Anne Levy ,  Max Gerald Levy ,  Alan Frederick Norris ,  James Albert Slinkman

Inventor： Dinh Dang ,  Thai Doan ,  Jessica Anne Levy ,  Max Gerald Levy ,  Alan Frederick Norris ,  James Albert Slinkman

IPC: H01L29/78 ,  H01L29/06

CPC classification number: H01L27/1203 ,  H01L21/28518 ,  H01L21/743 ,  H01L21/84

Abstract: A low resistance contact structure and method of making the structure. The structure includes a polysilicon contact through an upper silicon layer and buried oxide layer to a lower silicon layer of a silicon-on-insulation substrate. A region of the upper silicon layer surrounds the polysilicon contact and top surface of the polysilicon contact and surrounding region of upper silicon layer are metal silicided providing an extended contact area greater than the area of the top surface of polysilicon contact.

Abstract translation: 低电阻接触结构及其制造方法。 该结构包括通过上硅层和掩埋氧化物层到硅绝缘衬底的下硅层的多晶硅接触。 上硅层的区域围绕多晶硅接触并且多晶硅接触的顶表面和上硅层的周围区域是金属硅化物，提供大于多晶硅接触顶表面的扩展接触面积。

公开(公告)号：US07351879B2

公开(公告)日：2008-04-01

申请号：US11051456

申请日：2005-02-04

Applicant: Robert Fischer ,  Tetsu Kinoshita ,  Ramin Yadegari ,  Mary Gehring ,  Jack Okamuro ,  Van-Dinh Dang

Inventor： Robert Fischer ,  Tetsu Kinoshita ,  Ramin Yadegari ,  Mary Gehring ,  Jack Okamuro ,  Van-Dinh Dang

IPC: C12N15/29 ,  C12N15/82 ,  A01H5/00

CPC classification number: C12N15/8234 ,  C07K14/415 ,  C12N15/8261 ,  C12N15/827 ,  Y02A40/146

Abstract: The present invention provides compositions and methods for modulating plant development by modulating the expression or activity of plant polycomb genes including FIE and MEA.

Abstract translation: 本发明提供了通过调节包括FIE和MEA在内的植物多梳基因的表达或活性来调节植物发育的组合物和方法。

公开(公告)号：US07264964B2

公开(公告)日：2007-09-04

申请号：US10177478

申请日：2002-06-21

Applicant: Van-Dinh Dang ,  Jack Okamuro

Inventor： Van-Dinh Dang ,  Jack Okamuro

IPC: C07H21/02 ,  C12N15/00

CPC classification number: C12N9/1029 ,  A01K2217/05 ,  C07K2319/00 ,  C12N9/14 ,  C12N9/16 ,  C12N15/8261 ,  C12N15/8267 ,  C12N15/829 ,  G01N33/6875 ,  Y02A40/146

Abstract: Chimeric polypeptides are disclosed that comprise a first polypeptide segment having histone acetyltransferase enzymatic activity and a second polypeptide segment that is similar to a subunit of a chromatin-associated histone deacetyltransferase protein complex. Also disclosed are nucleic acids encoding such chimeric polypeptides and eukaryotic organisms expressing such chimeric polypeptides.

Abstract translation: 公开了包含具有组蛋白乙酰转移酶酶活性的第一多肽片段和类似于染色质相关组蛋白脱乙酰基转移酶蛋白复合物亚基的第二多肽片段的嵌合多肽。 还公开了编码这种嵌合多肽的核酸和表达这种嵌合多肽的真核生物。

公开(公告)号：US20050081261A1

公开(公告)日：2005-04-14

申请号：US10966482

申请日：2004-10-14

Applicant: Roger Pennell ,  Van-Dinh Dang

Inventor： Roger Pennell ,  Van-Dinh Dang

IPC: C12N15/82 ,  A01H1/00

CPC classification number: C12N15/8218 ,  C12N15/8261 ,  Y02A40/146

Abstract: Plants are disclosed that express a cytosine DNA methyltransferase and that can be used to confer an altered seed phenotype, e.g., an increase in seed weight. Also disclosed are plants in which expression of an endogenous cytosine DNA methyltransferase is inhibited and that exhibit an altered seed phenotype, e.g., an increase in seed weight. Also disclosed are nucleic acids and polypeptides suitable for conferring such phenotypes.

Abstract translation: 公开了表达胞嘧啶DNA甲基转移酶的植物，其可以用于赋予改变的种子表型，例如种子重量的增加。 还公开了其中内源胞嘧啶DNA甲基转移酶的表达被抑制并且表现出改变的种子表型的植物，例如种子重量的增加。 还公开了适于赋予这种表型的核酸和多肽。

公开(公告)号：US5498313A

公开(公告)日：1996-03-12

申请号：US147653

申请日：1993-11-03

Applicant: Michael E. Bailey ,  Dinh Dang ,  James G. Michael ,  Timothy E. Neary ,  Paul W. Pastel ,  Sylvia R. R. Tousley ,  Arthur C. Winslow

Inventor： Michael E. Bailey ,  Dinh Dang ,  James G. Michael ,  Timothy E. Neary ,  Paul W. Pastel ,  Sylvia R. R. Tousley ,  Arthur C. Winslow

IPC: H01L21/302 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/00

CPC classification number: H01J37/32623 ,  H01J2237/3347

Abstract: In a plasma or RIE etching tool using a uniquely designed annulus around a wafer supporting pedestal, it has been found that the introduction of one or more gases in the region immediately adjacent the annulus controls the amount of etching of features in that region in the surface of the wafer mounted on the pedestal. By so controlling the amount of gas in this region, the slope of the walls of the etched features can be also controlled.

Abstract translation: 在使用围绕晶片支撑基座的独特设计的环形空间的等离子体或RIE蚀刻工具中，已经发现在紧邻环形空间的区域中引入一种或多种气体来控制表面中该区域中特征的蚀刻量 的晶片安装在基座上。 通过这样控制该区域中的气体量，也可以控制蚀刻特征的壁的斜率。

公开(公告)号：US08912574B2

公开(公告)日：2014-12-16

申请号：US12967771

申请日：2010-12-14

Applicant: Mattias E. Dahlstrom ,  Dinh Dang ,  Qizhi Liu ,  Ramana M. Malladi

Inventor： Mattias E. Dahlstrom ,  Dinh Dang ,  Qizhi Liu ,  Ramana M. Malladi

IPC: H01L21/763 ,  H01L23/367 ,  H01L21/762 ,  H01L29/08 ,  H01L29/66 ,  H01L29/737

CPC classification number: H01L29/66242 ,  H01L21/30604 ,  H01L21/308 ,  H01L21/76224 ,  H01L21/763 ,  H01L23/367 ,  H01L23/3677 ,  H01L23/373 ,  H01L29/0821 ,  H01L29/7371 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of making a semiconductor structure includes forming a trench through a shallow trench isolation (STI) structure and into a substrate, and forming a liner including an electrical insulator material on sidewalls of the trench. The method also includes forming a core including a high thermal conductivity material in the trench and on the liner, and forming a cap in the trench and on the core.

Abstract translation: 制造半导体结构的方法包括通过浅沟槽隔离（STI）结构形成沟槽并且形成衬底，以及在沟槽的侧壁上形成包括电绝缘体材料的衬垫。 该方法还包括在沟槽和衬垫上形成包括高导热性材料的芯，并在沟槽和芯上形成帽。

公开(公告)号：US08193409B2

公开(公告)日：2012-06-05

申请号：US10572827

申请日：2003-08-18

Applicant: Kenneth Feldmann ,  Roger Pennell ,  Shing Kwok ,  Van-Dinh Dang ,  Hongyu Zhang

Inventor： Kenneth Feldmann ,  Roger Pennell ,  Shing Kwok ,  Van-Dinh Dang ,  Hongyu Zhang

IPC: C12N15/82 ,  C12N5/04 ,  A01H5/00 ,  A01H5/10

CPC classification number: C07K14/415 ,  C12N15/8261 ,  Y02A40/146

Abstract: Isolated polynucleotides and polypeptides encoded thereby are described, together with the use of those products for making transgenic plants that are characterized by increased size, have an increased number and size of rosette leaves and are late-flowering.

Abstract translation: 描述了分离的多核苷酸和由此编码的多肽，连同使用这些产物来制备以增加尺寸为特征的转基因植物，具有增加的玫瑰花叶数量和尺寸，并且是晚开花的。

公开(公告)号：US20110316101A1

公开(公告)日：2011-12-29

申请号：US12973430

申请日：2010-12-20

Applicant: Dinh DANG ,  Thai DOAN ,  Jeffrey C. MALING ,  Anthony K. STAMPER

Inventor： Dinh DANG ,  Thai DOAN ,  Jeffrey C. MALING ,  Anthony K. STAMPER

IPC: H01L29/84 ,  G06F17/50 ,  H01L21/302

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a plurality of discrete wires on a substrate. The method further includes forming a sacrificial cavity layer on the discrete wires. The method further includes forming trenches in an upper surface of the sacrificial cavity layer. The method further includes filling the trenches with dielectric material. The method further includes depositing metal on the sacrificial cavity layer and on the dielectric material to form a beam with at least one dielectric bumper extending from a bottom surface thereof.

Abstract translation: 形成至少一个微电子机械系统（MEMS）的方法包括在基板上形成多个分立的导线。 该方法还包括在分立导线上形成牺牲腔层。 该方法还包括在牺牲腔层的上表面中形成沟槽。 该方法还包括用电介质材料填充沟槽。 该方法还包括在牺牲腔层和电介质材料上沉积金属以形成具有从其底表面延伸的至少一个介电保险杠的梁。

公开(公告)号：US07838650B2

公开(公告)日：2010-11-23

申请号：US11602163

申请日：2006-11-20

Applicant: Roger Pennell ,  Kenneth A. Feldmann ,  Yu-Ping Lu ,  Yiwen Fang ,  Shing Kwok ,  Van-Dinh Dang ,  Zhihong Cook ,  Jack Okamuro ,  Nestor Apuya ,  Richard Schneeberger ,  Emilio Margolles-Clark ,  Edward A. Kiegle ,  Leonard Medrano

Inventor： Roger Pennell ,  Kenneth A. Feldmann ,  Yu-Ping Lu ,  Yiwen Fang ,  Shing Kwok ,  Van-Dinh Dang ,  Zhihong Cook ,  Jack Okamuro ,  Nestor Apuya ,  Richard Schneeberger ,  Emilio Margolles-Clark ,  Edward A. Kiegle ,  Leonard Medrano

IPC: C12N15/82 ,  C12N15/63 ,  C12N15/11 ,  A01H5/00

CPC classification number: C12N15/8216 ,  C12N15/8225 ,  C12N15/8226 ,  C12N15/8227 ,  C12N15/8229 ,  C12N15/823 ,  C12N15/8233 ,  C12N15/8234 ,  C12N15/8237

Abstract: The present invention is directed to promoter sequences and promoter control elements, polynucleotide constructs comprising the promoters and control elements, and methods of identifying the promoters, control elements, or fragments thereof. The invention further relates to the use of the present promoters or promoter control elements to modulate transcript levels.