Abstract:
An apparatus is disclosed for forming a sample of an object, extracting the sample from the object, and subjecting this sample to microanalysis including surface analysis and electron transparency analysis in a vacuum chamber. In some embodiments, a means is provided for imaging an object cross section surface of an extracted sample. Optionally, the sample is iteratively thinned and imaged within the vacuum chamber. In some embodiments, the sample is situated on a sample support including an optional aperture. Optionally, the sample is situated on a surface of the sample support such that the object cross section surface is substantially parallel to the surface of the sample support. Once mounted on the sample support, the sample is either subjected to microanalysis in the vacuum chamber, or loaded onto a loading station. In some embodiments, the sample is imaged with an electron beam substantially normally incident to the object cross section surface.
Abstract:
A charged particle beam apparatus is provided, which comprises a charged particle beam column for generating a primary charged particle beam; a focusing assembly, such as a charged particle lens, e.g., an electrostatic lens, for focusing the primary charged particle beam on a specimen; a detector for detecting charged signal particles which are emerging from the specimen; and a deflector arrangement for deflecting the primary charged particle beam. The deflector arrangement is arranged downstream of the focusing assembly and is adapted for allowing the charged signal particles passing therethrough. The detector is laterally displaced with respect to the optical axis in a deflection direction defined by the post-focusing deflector arrangement.
Abstract:
A system and method for generating a thin sample, the method includes: milling an intermediate section of a thin sample such as to enable an upper portion of the thin sample to tilt in relation to a lower portion of the thin sample; wherein the lower portion is connected to a wafer from which the thin sample was formed. A system and method for inspecting a thin sample, the method includes: A method for inspecting a thin sample, the method comprising: illuminating, by a charged particle beam, a tilted upper portion of a thin sample that is connected, via a milled intermediate section, to a lower portion of the thin sample; wherein the lower portion is connected to a wafer from which the thin sample was formed; and collecting particles and photons resulting from the illumination.
Abstract:
A system and method for generating a thin sample, the method includes: milling an intermediate section of a thin sample such as to enable an upper portion of the thin sample to tilt in relation to a lower portion of the thin sample; wherein the lower portion is connected to a wafer from which the thin sample was formed. A system and method for inspecting a thin sample, the method includes: A method for inspecting a thin sample, the method comprising: illuminating, by a charged particle beam, a tilted upper portion of a thin sample that is connected, via a milled intermediate section, to a lower portion of the thin sample; wherein the lower portion is connected to a wafer from which the thin sample was formed; and collecting particles and photons resulting from the illumination.
Abstract:
Systems and methods for process monitoring based upon X-ray emission induced by a beam of charged particles such as electrons or ions include a system and method for process monitoring that analyze a cavity before being filled and then analyze emitted X-rays from the cavity after the cavity has been filled with a conductive material. Also included are system and methods for process monitoring that apply a quantitative analysis correction technique on detected X-ray emissions.
Abstract:
The invention provides a method for automatically aligning a beam of charged particles with an aperture. Thereby, the beam is defelcted to two edges of the aperture. From the signals required to obtain an extinction, a correction deflection field is calculated. Furter, a method for automatically aligning a beam of charged particles with an optical axis is provided. Thereby a defocusing is introduced and a signal calculated based on an introduced image shift is applied to a deflection unit. Further, a method for correction of the astigmatism is provided. Thereby the sharpness is evaluated for a sequence of frames measured whilst varying the signals to a stigmator.
Abstract:
A method for detecting hidden defects and patterns, the method includes: receiving an object that comprises an opaque layer positioned above an intermediate layer; defining an energy band in response to at least one characteristic of the opaque layer and at least one characteristic of a scanning electron microscope; illuminating the object with a primary electron beam; and generating images from electrons that arrive to a spectrometer having an energy within the energy band. A scanning electron microscope that includes a stage for supporting an object that comprises an opaque layer positioned above an intermediate layer; a controller, adapted to receive or define an energy band in response to at least one characteristic of the opaque layer and at least one characteristic of a scanning electron microscope; illumination optics adapted to illuminate the object with a primary electron beam; an electron spectrometer, controlled by the controller such as to selectively reject electrons in response to the defined energy band; and a processor, coupled to the spectrometer, adapted to generate images from detection signals provided by the spectrometer.
Abstract:
A method for improving the resolution of a scanning electron microscope, the method includes: defining an energy band in response to an expected penetration depth of secondary electrons in an object; illuminating the object with a primary electron beam; and generating images from electrons that arrive to a spectrometer having an energy within the energy band. A scanning electron microscope that includes: a stage for supporting an object; a controller, adapted to receive or define an energy band an energy band in response to an expected penetration depth of secondary electrons in an object; illumination optics adapted to illuminate the object with a primary electron beam; a spectrometer, controlled by the controller such as to selectively reject electrons in response to the defined energy band; and a processor that is adapted to generate images from detection signals provided by the spectrometer.
Abstract:
A system and method for multi detector detection of electrons, the method includes the steps of directing a primary electron beam, through a column, to interact with an inspected object, directing, by introducing a substantial electrostatic field, electrons reflected or scattered from the inspected objects towards multiple interior detectors, whereas at least some of the directed electrons are reflected or scattered at small angle in relation to the inspected object; and receiving detection signals from at least one interior detector.
Abstract:
A system and method for reducing ion contamination in an object, the ion contamination introduced by a contaminating ion beam milling step. The system includes means for defining a suspected ion contaminated area; and means for removing the suspected ion contaminated area by a non-contaminating process, which usually involves directing an electron beam towards the removed area while allowing the beam to interact with additional material. The method includes the steps of defining a suspected ion contaminated area; and removing the suspected ion contaminated area by non-contaminating process.