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92 条记录 (耗时 0.018 秒)

    Semiconductor device and method for manufacturing the same
    21.
    发明授权
    Semiconductor device and method for manufacturing the same 失效
    半导体装置及其制造方法

    公开(公告)号：US06821885B2

    公开(公告)日：2004-11-23

    申请号：US10032562

    申请日：2002-01-02

    申请人： Shinichi Imai

    发明人： Shinichi Imai

    IPC分类号： H01L214763

    CPC分类号： H01L23/5226 ,  H01L21/76804 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

    摘要： A method for manufacturing a semiconductor device of the present invention includes the steps of: (a) depositing an interlayer insulator film on a substrate including a plurality of conductive layers; (b) forming a plurality of contact holes running through the interlayer insulator film to reach respective ones of the plurality of conductive layers, each of the contact holes having a tapered portion at an upper end thereof; (c) depositing a conductive material film on the interlayer insulator film so as to fill the plurality of contact holes; (d) removing the conductive material film until a surface of the interlayer insulator film is exposed so as to form a plurality of plugs made of the conductive material film filling the plurality of contact holes; and (e) removing a portion of the interlayer insulator film, which has been exposed in the step (d), so as to remove the tapered portions.

    摘要翻译： 本发明的制造半导体器件的方法包括以下步骤：（a）在包括多个导电层的衬底上沉积层间绝缘膜; （b）形成穿过所述层间绝缘膜的多个接触孔，以到达所述多个导电层中的各个，每个所述接触孔在其上端具有锥形部分; （c）在所述层间绝缘膜上沉积导电材料膜以填充所述多个接触孔; （d）去除所述导电材料膜，直到所述层间绝缘膜的表面露出，以形成由填充所述多个接触孔的导电材料膜制成的多个插塞; 和（e）去除已经在步骤（d）中暴露的层间绝缘膜的一部分，以去除锥形部分。

    Plasma processing method
    22.
    发明授权
    Plasma processing method 失效
    等离子体处理方法

    公开(公告)号：US06749763B1

    公开(公告)日：2004-06-15

    申请号：US09630680

    申请日：2000-08-01

    申请人： Shinichi Imai

    发明人： Shinichi Imai

    IPC分类号： H01L2100

    CPC分类号： H01L21/67069 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144

    摘要： A semiconductor substrate, on which a silicon dioxide film with a resist film defined thereon has been formed, is placed inside a reaction chamber of a plasma processing system. Then, a fluorocarbon gas with a C/F ratio of 0.5 or more is introduced into the reaction chamber. In this process step, the flow rate of the gas is controlled such that the residence time &tgr; of the gas in the reaction chamber becomes greater than 0.1 sec and equal to or less than 1 sec in accordance with an equation &tgr;=P×V/Q, where &tgr; is the residence time (unit: sec), P is a pressure (unit: Pa) of the gas, V is a volume (unit: L) of the reaction chamber and Q is the flow rate (unit: Pa·L/sec) of the gas. Thereafter, plasma is created from the fluorocarbon gas and the silicon dioxide film is plasma-etched using the resist film as a mask.

    摘要翻译： 已经形成有其上形成有抗蚀剂膜的二氧化硅膜的半导体衬底被放置在等离子体处理系统的反应室内。 然后，将C / F比为0.5以上的碳氟化合物气体引入反应室。 在该方法步骤中，控制气体的流速，使得反应室中的气体的停留时间τ根据方程式τ= P×V / Q大于0.1秒且等于或小于1秒， 其中τ是停留时间（单位：秒），P是气体的压力（单位：Pa），V是反应室的体积（单位：L），Q是流量（单位：Pa.L / sec）的气体。 此后，从碳氟化合物气体产生等离子体，并且使用抗蚀剂膜作为掩模等离子体蚀刻二氧化硅膜。

    Dry etching method, chemical vapor deposition method, and apparatus for processing semiconductor substrate
    23.
    发明授权
    Dry etching method, chemical vapor deposition method, and apparatus for processing semiconductor substrate 失效

    公开(公告)号：US5767021A

    公开(公告)日：1998-06-16

    申请号：US882108

    申请日：1997-06-25

    申请人： Shinichi Imai ,  Tokuhiko Tamaki

    发明人： Shinichi Imai ,  Tokuhiko Tamaki

    IPC分类号： H01L21/306 ,  H01L21/311 ,  H01L21/32 ,  H01L21/3213 ,  H01L21/00

    CPC分类号： H01L21/32135 ,  H01L21/30604 ,  H01L21/31116 ,  H01L21/32 ,  H01L21/32137

    摘要： In performing plasma etching or plasma CVD, a gas containing an interhalogen compound gas or a XeF.sub.2 gas is used as a process gas. Such a process gas generates, in the state of non-plasma and with activation energy lower than a specified level, a volatile material from a deposition species generated in the above etching so as to contribute to the suppression of film formation. For example, the XeF.sub.2 gas, a BrF.sub.3 gas, a BrCl gas are used in the cases of etching a silicon dioxide film, a silicide film, and a polysilicon film, respectively. On the surface of a substrate is formed a non-volatile protective film so as to improve the profiles of an opening. At the wall surface of a reaction chamber which is barely influenced by the plasma, the deposition species is turned into a volatile material (e.g., SiF.sub.4) so as to suppress the deposition of reaction products thereon. If the interhalogen compound gas, XeF.sub.2 gas, or the like is added to a main gas for performing CVD, the same effects can be achieved.

    Dry etching method, chemical vapor deposition method, and apparatus for processing semiconductor substrate
    24.
    发明授权
    Dry etching method, chemical vapor deposition method, and apparatus for processing semiconductor substrate 失效

    公开(公告)号：US5716494A

    公开(公告)日：1998-02-10

    申请号：US365963

    申请日：1994-12-29

    申请人： Shinichi Imai ,  Tokuhiko Tamaki

    发明人： Shinichi Imai ,  Tokuhiko Tamaki

    IPC分类号： H01L21/306 ,  H01L21/311 ,  H01L21/32 ,  H01L21/3213 ,  H01L21/00

    CPC分类号： H01L21/32135 ,  H01L21/30604 ,  H01L21/31116 ,  H01L21/32 ,  H01L21/32137

    摘要： In performing plasma etching or plasma CVD, a gas containing an interhalogen compound gas or a XeF.sub.2 gas is used as a process gas. Such a process gas generates, in the state of non-plasma and with activation energy lower than a specified level, a volatile material from a deposition species generated in the above etching so as to contribute to the suppression of film formation. For example, the XeF.sub.2 gas, a BrF.sub.3 gas, a BrCl gas are used in the cases of etching a silicon dioxide film, a silicide film, and a polysilicon film, respectively. On the surface of a substrate is formed a non-volatile protective film so as to improve the profiles of an opening. At the wall surface of a reaction chamber which is barely influenced by the plasma, the deposition species is turned into a volatile material (e.g., SiF.sub.4) so as to suppress the deposition of reaction products thereon. If the interhalogen compound gas, XeF.sub.2 gas, or the like is added to a main gas for performing CVD, the same effects can be achieved.

    Semiconductor device and process
    25.
    发明授权
    Semiconductor device and process 失效
    半导体器件和工艺

    公开(公告)号：US5633211A

    公开(公告)日：1997-05-27

    申请号：US347114

    申请日：1994-11-23

    申请人： Shinichi Imai ,  Yuka Terai ,  Masanori Fukumoto ,  Kousaku Yano ,  Hiroyuki Umimoto ,  Shinji Odanaka ,  Yasuo Mizuno

    发明人： Shinichi Imai ,  Yuka Terai ,  Masanori Fukumoto ,  Kousaku Yano ,  Hiroyuki Umimoto ,  Shinji Odanaka ,  Yasuo Mizuno

    IPC分类号： C23C16/40 ,  H01L21/3105 ,  H01L21/316 ,  H01L21/02

    CPC分类号： H01L21/02131 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02129 ,  H01L21/02142 ,  H01L21/02148 ,  H01L21/0215 ,  H01L21/02271 ,  H01L21/02321 ,  H01L21/3105 ,  H01L21/31625 ,  H01L21/31629

    摘要： The characteristic of semiconductor devices is satisfactorily maintained because the planarization of a dielectric film of a semiconductor device is carried out at a lower flow temperature. In the case of a silicon dioxide film being a dielectric film, a network structure is composed of atoms of silicon which serve as a main constituent, and of atoms of oxygen which serve as a sub-constituent of a matrix of the dielectric film. These oxygen atoms are replaced by non-bridging constituents such as atoms of halogen including fluorine. This breaks a bridge, via an oxygen atom, between the silicon atoms, at a position where such a replacement takes place. In consequence, the viscosity of the dielectric film falls with the flow temperature. If, for example, part of the oxygen in a BPSG film is substituted by fluorine, this allows the dielectric film to flow at a lower temperature of 850.degree. C. The short channel effects can be suppressed.

    摘要翻译： 由于半导体器件的电介质膜的平坦化在较低的流动温度下进行，因此令人满意地保持半导体器件的特性。 在作为电介质膜的二氧化硅膜的情况下，网状结构由作为主要成分的硅原子和作为电介质膜的基体的副成分的氧原子构成。 这些氧原子被诸如卤素原子包括氟的非桥连组分替代。 在发生这种替换的位置上，这通过氧原子在硅原子之间断开桥。 因此，电介质膜的粘度随流动温度而下降。 例如，如果BPSG膜中的氧的一部分被氟取代，则允许电介质膜在850℃的较低温度下流动。可以抑制短的通道效应。

    Removing interhalogen compounds from semiconductor manufacturing equipment
    26.
    发明授权
    Removing interhalogen compounds from semiconductor manufacturing equipment 失效
    从半导体制造设备中去除卤间化合物

    公开(公告)号：US5546890A

    公开(公告)日：1996-08-20

    申请号：US391666

    申请日：1995-02-21

    申请人： Tokuhiko Tamaki ,  Shinichi Imai

    发明人： Tokuhiko Tamaki ,  Shinichi Imai

    IPC分类号： B08B9/02 ,  C30B25/14 ,  C30B25/00 ,  B08B9/03 ,  H01L21/00

    CPC分类号： B08B9/032 ,  C30B25/14 ,  Y10S438/905

    摘要： Inert gas is introduced in and then discharged from the inside of a pneumatic device such as a chamber, a pipe or the like which is used for producing semiconductor devices and through which interhalogen compound gas passes. Then, gas having humidity exceeding 1% is introduced into the chamber or the like. Before the gas having humidity exceeding 1% is introduced into the chamber or the like, the interhalogen compound gas in the chamber or the like is lowered in concentration to such an extent that the inner wall of the chamber or the like is not corroded. Thereafter, when the gas having humidity exceeding 1% is introduced, the interhalogen compound (for example, ClF.sub.3 gas) is decomposed into a substance such as HF or the like of which toxicity is low and of which adsorptivity to the inner wall of the chamber or the like is also low. Thereafter, the inside of the chamber or the like is opened to atmosphere. Thus, when the method above-mentioned is used for opening, to atmosphere, the inside of a pneumatic device which is used for producing semiconductor devices and in which etching, CVD, cleaning or the like is executed using interhalogen compound gas, this prevents not only the inner wall of the pneumatic device from being corroded, but also the human body from being adversely affected.

    摘要翻译： 惰性气体从用于制造半导体器件的气体装置（例如腔室，管子等）的内部引入然后从其中排出，并通过其间通过卤化氢化合物气体。 然后，将湿度超过1％的气体引入室等。 在湿度超过1％的气体被引入室等之前，腔室等中的卤间化合物气体的浓度降低至室内等的内壁不被腐蚀的程度。 此后，当导入湿度超过1％的气体时，卤化氢化合物（例如ClF 3气体）被分解成诸如HF等物质，其毒性低，并且对室的内壁具有吸附性 等等也很低。 此后，将室或类似物的内部打开到大气。 因此，当使用上述方法打开大气时，用于制造半导体器件的气动装置的内部，并且使用间卤化合物气体进行蚀刻，CVD，清洁等，这防止了 只有气动装置的内壁被腐蚀，而且对人体的不利影响。

    NONVOLATILE STORAGE ELEMENT AND METHOD OF MANUFACTURING THEREOF
    30.
    发明申请
    NONVOLATILE STORAGE ELEMENT AND METHOD OF MANUFACTURING THEREOF 有权
    非易失存储元件及其制造方法

    公开(公告)号：US20140024197A1

    公开(公告)日：2014-01-23

    申请号：US14110163

    申请日：2012-04-11

    申请人： Yoshio Kawashima ,  Takumi Mikawa ,  Shinichi Imai

    发明人： Yoshio Kawashima ,  Takumi Mikawa ,  Shinichi Imai

    IPC分类号： H01L45/00

    CPC分类号： H01L45/1675 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146

    摘要： A method of manufacturing a variable resistance nonvolatile memory element includes: forming a lower electrode layer above a substrate; forming, on the lower electrode layer, a variable resistance layer including an oxygen-deficient transition metal oxide; forming an upper electrode layer on the variable resistance layer; and forming a patterned mask on the upper electrode layer and etching the upper electrode layer, the variable resistance layer, and the lower electrode layer using the patterned mask, wherein in the etching, at least the variable resistance layer is etched using an etching gas containing bromine.

    摘要翻译： 一种制造可变电阻非易失性存储元件的方法包括：在衬底上形成下电极层; 在下电极层上形成包含缺氧过渡金属氧化物的可变电阻层; 在所述可变电阻层上形成上电极层; 以及在所述上电极层上形成图案化掩模，并使用所述图案掩模蚀刻所述上电极层，所述可变电阻层和所述下电极层，其中在所述蚀刻中，至少所述可变电阻层使用含有 溴。