公开(公告)号：US09704713B1

公开(公告)日：2017-07-11

申请号：US15091798

申请日：2016-04-06

Applicant: Thin Film Electronics ASA

Inventor： Wenzhuo Guo ,  Brent Ridley ,  Joerg Rockenberger

IPC: C09D1/00 ,  H01L21/225 ,  H01B3/02 ,  H01L21/02 ,  H01L21/324

CPC classification number: H01L21/2254 ,  C07F7/025 ,  C07F7/0834 ,  C08G77/04 ,  C08G77/06 ,  C09D1/00 ,  H01B3/02 ,  H01B3/025 ,  H01L21/02112 ,  H01L21/02126 ,  H01L21/02282 ,  H01L21/02288 ,  H01L21/02318 ,  H01L21/324

Abstract: In one aspect, the present invention provides undoped and doped siloxanes, germoxanes, and silagermoxanes that are substantially free from carbon and other undesired contaminants. In a second aspect, the present invention provides methods for making such undoped and doped siloxanes, germoxanes, and silagermoxanes. In still another aspect, the present invention provides compositions comprising undoped and/or doped siloxanes, germoxanes, and silagermoxanes and a solvent, and methods for forming undoped and doped dielectric films from such compositions. Undoped and/or doped siloxane compositions as described advantageously provide undoped and/or doped dielectric precursor inks that may be employed in forming substantially carbon-free undoped and/or doped dielectric films.

公开(公告)号：US09640390B1

公开(公告)日：2017-05-02

申请号：US13889243

申请日：2013-05-07

Applicant: Thin Film Electronics ASA

Inventor： Wenzhuo Guo ,  Fabio Zurcher ,  Arvind Kamath ,  Joerg Rockenberger

IPC: H01L21/02 ,  C08G77/56 ,  H01L27/12 ,  H01L29/66 ,  C09D183/16 ,  H01L21/208

CPC classification number: H01L21/02667 ,  C08G77/56 ,  C08K5/55 ,  C08K2201/001 ,  C09D11/52 ,  C09D183/16 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02628 ,  H01L21/208 ,  H01L27/1292 ,  H01L29/167 ,  H01L29/66757

Abstract: Doped semiconductor ink formulations, methods of making doped semiconductor ink formulations, methods of coating or printing thin films, methods of forming electronic devices and/or structures from the thin films, and methods for modifying and controlling the threshold voltage of a thin film transistor using the films are disclosed. A desired dopant may be added to an ink formulation comprising a Group IVA compound and a solvent, and then the ink may be printed on a substrate to form thin films and conductive structures/devices, such as thin film transistors. By adding a customized amount of the dopant to the ink prior to printing, the threshold voltage of a thin film transistor made from the doped semiconductor ink may be independently controlled upon activation of the dopant.

公开(公告)号：US6424553B2

公开(公告)日：2002-07-23

申请号：US81735901

申请日：2001-03-22

Applicant: THIN FILM ELECTRONICS ASA

Inventor： BERGGREN ROLF MAGNUS ,  NORDAL PER-ERIK ,  LEISTAD GEIRR IVARSSON

IPC: G11C11/41 ,  G09F9/30 ,  G09G3/20 ,  G11C5/02 ,  G11C8/00 ,  G11C8/02 ,  G11C8/14 ,  G11C11/4193 ,  G11C13/02

CPC classification number: G11C8/14 ,  B82Y10/00 ,  G11C8/00 ,  G11C2213/71 ,  G11C2213/77 ,  G11C2213/81

Abstract: A device for providing addressability in an apparatus including one or more volume elements which together with the device form part of a matrix in the apparatus. The device establishes an electrical connection to specific cells by electrodes in the matrix and thereby defining a cell in the volume element. The device includes at least three sets of plural strip-like electrodes, the strip-like electrodes of each set being provided in substantially parallel relationship to each other in a two-dimensional and planar layer forming an additional part of the matrix. A set of strip-like electrodes in one layer is oriented at an angle to the projected angle of orientation of the electrode sets in proximal neighboring layers onto this one layer, such that the sets of strip-like electrodes in proximal neighboring layers exhibit a mutual non-orthogonal relationship.

Abstract translation: 一种用于在包括一个或多个体积元素的装置中提供可寻址性的装置，所述体积元素与装置一起形成装置中的矩阵的一部分。 该装置通过矩阵中的电极建立与特定电池的电连接，从而在体积元件中限定电池。 该装置包括至少三组多个条状电极，每组的条状电极以形成基质的另外部分的二维和平面层彼此基本平行的关系设置。 在一层中的一组带状电极被定向成与邻近相邻层中的电极组的取向的投影角度定向在该一层上，使得邻近相邻层中的带状电极组显示相互 非正交关系。

公开(公告)号：US10826158B2

公开(公告)日：2020-11-03

申请号：US16287126

申请日：2019-02-27

Applicant: Thin Film Electronics ASA

Inventor： Somnath Mukherjee ,  Aditi Chandra ,  Mao Ito ,  Arvind Kamath ,  Scott Bruner ,  Sambhu Kundu ,  Anand Deshpande

IPC: H01L23/52 ,  H01Q1/22 ,  H01L23/532 ,  H01L23/528 ,  H01L23/64 ,  H01L23/522 ,  H01L23/66

Abstract: A wireless communication device having an integrated antenna, and methods for making and using the same are disclosed. The device generally includes (a) a substrate; (b) an integrated circuit (IC) comprising a plurality of printed and/or thin film layers and/or structures on the substrate, (c) a dielectric or insulator layer in at least one area of the substrate other than the IC; and (d) an antenna on the dielectric or insulator layer, comprising one or more metal traces. The plurality of printed and/or thin film layers and/or structures include an uppermost layer of metal. The antenna has (i) an inner terminal continuous with the uppermost layer of metal or connected to the uppermost layer of metal through one or more contacts, and (ii) an outer terminal connected to the uppermost layer of metal through one or more contacts and optionally a metal bridge or strap.

公开(公告)号：US10450419B2

公开(公告)日：2019-10-22

申请号：US15326632

申请日：2015-06-30

Applicant: Thin Film Electronics ASA

Inventor： Masahisa Endo ,  Gun Son ,  Yuichi Goto ,  Kentaro Nagai

IPC: C08G77/60 ,  C01B33/02 ,  C01B33/04 ,  C03C17/22 ,  B05D3/02 ,  C01B33/021 ,  C09D5/24 ,  C09D183/16 ,  H01L21/02

Abstract: There is provided a highly conductive and good silicon thin film which is obtained by applying a coating-type polysilane composition prepared by use of a polysilane having a large weight average molecular weight to a substrate, followed by baking. A polysilane having a weight average molecular weight of 5,000 to 8,000. The polysilane may be a polymer of cyclopentasilane. A silicon film obtained by applying a polysilane composition in which the polysilane is dissolved in a solvent to a substrate, and baking the substrate at 100° C. to 425° C. The cyclopentasilane may be polymerized in the presence of a palladium catalyst supported on a polymer. The palladium catalyst supported on a polymer may be a catalyst in which palladium as a catalyst component is immobilized on a functional polystyrene. The palladium may be a palladium compound or a palladium complex. The palladium-immobilized catalyst may be formed by microencapsulating a zero-valent palladium complex or a divalent palladium compound with a functional polystyrene. The zero-valent palladium complex may be a tetrakis(triphenylphosphine)palladium (0) complex.

公开(公告)号：US10414661B2

公开(公告)日：2019-09-17

申请号：US15523921

申请日：2015-10-13

Applicant: Thin Film Electronics ASA

Inventor： Yuichi Goto ,  Masahisa Endo ,  Gun Son ,  Kentaro Negai

IPC: C01B33/113 ,  C08G77/60 ,  B01J23/46 ,  C01B33/04 ,  H01L21/02

Abstract: A method of producing a silicon hydride oxide-containing organic solvent (coating solution) is provided with which a silicon hydride oxide coating film can be formed on a substrate. Using the silicon hydride oxide-containing organic solvent makes it unnecessary to place a coating solution in non-oxidizing atmosphere at the time of coating or to heat the substrate after coating because the silicon hydride oxide is formed in the coating solution before it is coated. The method includes blowing an oxygen-containing gas through an organic solvent containing a silicon hydride or a polymer thereof. The silicon hydride oxide may contain a proportion of (residual Si-H groups)/(Si-H groups before oxidation) of 1 to 40 mol %. The silicon hydride can be obtained by reacting a cyclic silane with a hydrogen halide in the presence of an aluminum halide, and reducing the obtained cyclic halosilane.

公开(公告)号：US20190132658A1

公开(公告)日：2019-05-02

申请号：US16309673

申请日：2017-06-19

Applicant: Thin Film Electronics ASA

Inventor： Somnath MUKHERJEE ,  James GODFREY

IPC: H04Q9/00 ,  G01D5/20 ,  H04B5/00 ,  A61M15/00

Abstract: An electronic device including a continuity sensor and electrical circuitry configured to detect and report the continuity state of an article, container or product packaging is disclosed. The continuity sensor includes a first substrate with first and second coils thereon, and a second substrate with a third coil thereon. The first coil has an integrated circuit electrically connected thereto. The first substrate is part of, or is attached or secured to a part of the article, container or packaging. The second substrate is another part of, or is attached or secured to another part of the article, container or packaging. One of the article, container or packaging parts is (re)movable with respect to the other part. The first and second coils have one coupling when the article, container or packaging is closed or sealed, and a different coupling when the article, container or packaging is open or unsealed.

公开(公告)号：US10202283B2

公开(公告)日：2019-02-12

申请号：US15326634

申请日：2015-07-14

Applicant: THIN FILM ELECTRONICS ASA

Inventor： Yuichi Goto ,  Kentaro Nagai ,  Masahisa Endo ,  Gun Son

IPC: C01B33/04

Abstract: A cyclic silane having high purity, a composition containing a polysilane obtained by polymerization of the cyclic silane, and a silicon thin film are disclosed. A method for producing a cyclic silane of the formula (SiH2)n, where n is an integer of 4 to 6, includes reacting a cyclic silane compound of the formula (SiR1R2)n (where R1 and R2 are each a hydrogen atom, a C1-6 alkyl group, or a substituted or unsubstituted phenyl group) with a hydrogen halide in the presence of an aluminum halide to obtain a cyclic silane of the formula (SiR3R4)n (where R3 and R4 are each a halogen atom), and then distilling the solution, and reducing the cyclic silane of the formula (SiR3R4)n with hydrogen or lithium aluminum hydride. The distillation may be carried out at a temperature of 40° C. to 80° C. under a reduced pressure of 0 to 30 Torr.

公开(公告)号：US09985691B2

公开(公告)日：2018-05-29

申请号：US15655081

申请日：2017-07-20

Applicant: Thin Film Electronics ASA

Inventor： Somnath Mukherjee

IPC: H04B5/00 ,  H04B1/16 ,  H04B1/04 ,  H01L29/94 ,  H01L23/66

CPC classification number: H04B5/0012 ,  H01L23/66 ,  H01L29/94 ,  H01L2223/6677 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19105 ,  H04B1/04 ,  H04B1/16 ,  H04B5/0062

Abstract: A wireless (e.g., near field or RF) communication device, and methods of manufacturing and using the same are disclosed. The wireless communication device includes a receiver and/or transmitter, a substrate with an antenna thereon, an integrated circuit, and one or more continuity sensors. The antenna receives and/or backscatters a wireless signal. The integrated circuit processes the wireless signal and/or information therefrom, and/or generates the wireless signal and/or information therefor. The continuity sensor(s) are configured to sense or determine the presence of a chemical or substance in the package or container, and thus a continuity state of a package or container on which the communication device is placed or to which the communication device is fixed or adhered. The continuity sensor(s) are electrically connected to a set of terminals of the integrated circuit different from the set of terminals to which the antenna is electrically connected.

公开(公告)号：US09985664B2

公开(公告)日：2018-05-29

申请号：US14328187

申请日：2014-07-10

Applicant: Thin Film Electronics ASA

Inventor： Vivek Subramanian ,  Mingming Mao ,  Zhigang Wang

IPC: H01L21/66 ,  H03B5/12 ,  H04B1/04 ,  G06K7/00 ,  G06K7/10 ,  H03K3/03 ,  H03K5/13 ,  H03K5/133 ,  H04H20/16 ,  H03K3/033 ,  H03K3/355 ,  G06K19/07

CPC classification number: H04B1/04 ,  G06K7/0008 ,  G06K7/10059 ,  G06K19/0723 ,  H01L22/20 ,  H01L2924/0002 ,  H03B5/1203 ,  H03K3/0315 ,  H03K3/033 ,  H03K3/355 ,  H03K5/13 ,  H03K5/133 ,  H04H20/16 ,  H01L2924/00

Abstract: Circuits and circuit elements configured to generate a random delay, a monostable oscillator, circuits configured to broadcasting repetitive messages wireless systems, and methods for forming such circuits, devices, and systems. The present invention advantageously provides relatively low cost delay generating circuitry based on TFT technology in wireless electronics applications, particularly in RFID applications. Such novel, technically simplified, low cost TFT-based delay generating circuitry enables novel wireless circuits, devices and systems, and methods for producing such circuits, devices and systems.