公开(公告)号：US20050196976A1

公开(公告)日：2005-09-08

申请号：US11115854

申请日：2005-04-25

Applicant: Neal Rueger ,  William Budge ,  Weimin Li ,  Gurtej Sandhu

Inventor： Neal Rueger ,  William Budge ,  Weimin Li ,  Gurtej Sandhu

IPC: C23C16/04 ,  C23C16/40 ,  H01L21/316 ,  H01L21/762 ,  H01L21/768 ,  H01L21/76 ,  H01L21/31 ,  H01L21/469

CPC classification number: H01L21/02274 ,  C23C16/045 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/76224 ,  H01L21/76837

Abstract: The invention includes a method of filling gaps in a semiconductor substrate. A substrate and a gas mixture containing at least one heavy-hydrogen compound are provided within a reaction chamber. The gas mixture is reacted to form a layer of material over the substrate by simultaneous deposition and etch of the layer. The layer of material fills the gap such that the material within the gap is essentially void-free. The invention includes a method of providing improved deposition rate uniformity. A material is deposited over a surface in the presence of at least one gas selected from the group consisting of D2, HD, DT, T2 and TH. The net deposition rate during the deposition has a degree of variance across the surface which is measurably improved relative to a corresponding degree of variance that occurs during deposition utilizing H2 under otherwise substantially identical conditions.

Abstract translation: 本发明包括填充半导体衬底中的间隙的方法。 在反应室内设置底物和含有至少一种重氢化合物的气体混合物。 通过同时沉积和蚀刻该层，使气体混合物反应以在衬底上形成一层材料。 材料层填充间隙，使得间隙内的材料基本上无空隙。 本发明包括提供改进的沉积速率均匀性的方法。 在选自由D 2，HD，DT，T 2和TH组成的组中的至少一种气体存在下，材料沉积在表面上。 沉积期间的净沉积速率在整个表面上具有相对于在其它实质上相同的条件下利用H 2 N沉积期间发生的相应的变化程度可以显着改善的表面上的变化程度。

公开(公告)号：US06918960B2

公开(公告)日：2005-07-19

申请号：US09997073

申请日：2001-11-28

Applicant: Weimin Li ,  Mark R. Visokay

Inventor： Weimin Li ,  Mark R. Visokay

IPC: C23C16/02 ,  C23C16/18 ,  C23C16/44 ,  C23C16/455 ,  H01L21/285 ,  C30B25/00

CPC classification number: C23C16/45523 ,  C23C16/0281 ,  C23C16/18 ,  H01L21/28556

Abstract: A method and system for performing metal-organic chemical vapor deposition (MOCVD). The method introduces a metal-organic compound into the CVD chamber in the presence of a first reactant selected to have a reducing chemistry and then, subsequently, a second reactant selected to have an oxidizing chemistry. The reducing chemistry results in deposition of metal species having a reduced surface mobility creating more uniform coverage and better adhesion. The oxidizing species results in deposition of metal species having a greater surface mobility leading to greater surface agglomeration and faster growth. By alternating the two reacts, faster growth is achieved and uniformity of the metal structure is enhanced.

Abstract translation: 一种用于进行金属有机化学气相沉积（MOCVD）的方法和系统。 该方法在选择具有还原化学性质的第一反应物存在下将CVD金属有机化合物引入CVD室中，然后再选择具有氧化性质的第二反应物。 还原化学导致具有降低的表面迁移率的金属物质的沉积产生更均匀的覆盖和更好的附着力。 氧化物质导致具有更大表面迁移率的金属物质的沉积，导致更大的表面附聚和更快的生长。 通过交替这两种反应，实现更快的生长并且提高金属结构的均匀性。

公开(公告)号：US06889141B2

公开(公告)日：2005-05-03

申请号：US10338995

申请日：2003-01-10

Applicant: Weimin Li ,  Qian Gao

Inventor： Weimin Li ,  Qian Gao

IPC: E03B1/00 ,  G01V3/00 ,  E02B13/00

CPC classification number: E03B1/00

Abstract: A method and system for calculating hydraulics and hydrology of watersheds automatically with flexibility. It combines the concepts of hydraulics and hydrology with the flexibility of spreadsheets and the automation of the accompanied standalone computer modules created in this new system. Each standalone module functions as a control center to communicate with other application programs like EXCEL and process the input data, to perform the calculation internally and place results in a popularly adopted format like spreadsheet. One control center relays information to others through linking the input and output data sources. A seamless stream of calculation can be formed flexibly by repeating the above linking procedure. This optimized calculation stream and the new computer functions created in them have eliminated many tedious and labor-intensive tasks. The modules are self-contained, which means easy maintenance and error proof compared with the scripts if any embedded in spreadsheets.

Abstract translation: 自动灵活地计算流域水文和水文的方法和系统。 它将液压和水文学的概念与电子表格的灵活性以及在这个新系统中创建的伴随的独立计算机模块的自动化相结合。 每个独立模块都可以作为一个控制中心与其他应用程序（如EXCEL）进行通信，并处理输入数据，在内部执行计算，并将结果放在通常采用的格式如电子表格中。 一个控制中心通过链接输入和输出数据源将信息传递给他人。 可以通过重复上述链接过程来灵活地形成无缝的计算流。 这种优化的计算流和在其中创建的新的计算机功能已经消除了许多繁琐和劳动密集的任务。 这些模块是独立的，这意味着与脚本（如果任何嵌入电子表格）相比，易于维护和错误验证。

公开(公告)号：US20050066895A1

公开(公告)日：2005-03-31

申请号：US10991693

申请日：2004-11-18

Applicant: Weimin Li ,  Mark Visokay

Inventor： Weimin Li ,  Mark Visokay

IPC: C23C16/02 ,  C23C16/18 ,  C23C16/44 ,  C23C16/455 ,  H01L21/285 ,  C23C16/00

CPC classification number: C23C16/45523 ,  C23C16/0281 ,  C23C16/18 ,  H01L21/28556

Abstract: A method and system for performing metal-organic chemical vapor deposition (MOCVD). The method introduces a metal-organic compound into the CVD chamber in the presence of a first reactant selected to have a reducing chemistry and then, subsequently, a second reactant selected to have an oxidizing chemistry. The reducing chemistry results in deposition of metal species having a reduced surface mobility creating more uniform coverage and better adhesion. The oxidizing species results in deposition of metal species having a greater surface mobility leading to greater surface agglomeration and faster growth. By alternating the two reacts, faster growth is achieved and uniformity of the metal structure is enhanced.

公开(公告)号：US20050064729A1

公开(公告)日：2005-03-24

申请号：US10669671

申请日：2003-09-23

Applicant: Neal Rueger ,  William Budge ,  Weimin Li ,  Gurtej Sandhu

Inventor： Neal Rueger ,  William Budge ,  Weimin Li ,  Gurtej Sandhu

IPC: C23C16/04 ,  C23C16/40 ,  H01L21/316 ,  H01L21/762 ,  H01L21/768 ,  H01L21/469

CPC classification number: H01L21/02274 ,  C23C16/045 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/76224 ,  H01L21/76837

Abstract: The invention includes a method of filling gaps in a semiconductor substrate. A substrate and a gas mixture containing at least one heavy-hydrogen compound are provided within a reaction chamber. The gas mixture is reacted to form a layer of material over the substrate by simultaneous deposition and etch of the layer. The layer of material fills the gap such that the material within the gap is essentially void-free. The invention includes a method of providing improved deposition rate uniformity. A material is deposited over a surface in the presence of at least one gas selected from the group consisting of D2, HD, DT, T2 and TH. The net deposition rate during the deposition has a degree of variance across the surface which is measurably improved relative to a corresponding degree of variance that occurs during deposition utilizing H2 under otherwise substantially identical conditions.

Abstract translation: 本发明包括填充半导体衬底中的间隙的方法。 在反应室内设置底物和含有至少一种重氢化合物的气体混合物。 通过同时沉积和蚀刻该层，使气体混合物反应以在衬底上形成一层材料。 材料层填充间隙，使得间隙内的材料基本上无空隙。 本发明包括提供改进的沉积速率均匀性的方法。 在选自由D2，HD，DT，T2和TH组成的组中的至少一种气体的存在下，在表面上沉积材料。 沉积期间的净沉积速率在整个表面上具有相对于相对于在基本上相同的条件下利用H 2时沉积期间发生的相应的变化程度可以显着改善的表面的变化程度。

公开(公告)号：US20050059262A1

公开(公告)日：2005-03-17

申请号：US10661379

申请日：2003-09-12

Applicant: Zhiping Yin ,  Weimin Li

Inventor： Zhiping Yin ,  Weimin Li

IPC: H01L21/314 ,  H01L21/31

CPC classification number: H01L21/02115 ,  H01L21/0214 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/0237 ,  H01L21/02439 ,  H01L21/02505 ,  H01L21/02527 ,  H01L21/0262 ,  H01L21/0332 ,  H01L21/3081 ,  H01L21/3146 ,  H01L27/10852

Abstract: A transparent amorphous carbon layer is formed. The transparent amorphous carbon layer has a low absorption coefficient such that the amorphous carbon is transparent in visible light. The transparent amorphous carbon layer may be used in semiconductor devices for different purposes. The transparent amorphous carbon layer may be included in a final structure in semiconductor devices. The transparent amorphous carbon layer may also be used as a mask in an etching process during fabrication of semiconductor devices.

公开(公告)号：US06866900B2

公开(公告)日：2005-03-15

申请号：US10460624

申请日：2003-06-11

Applicant: Weimin Li ,  Neal R. Rueger

Inventor： Weimin Li ,  Neal R. Rueger

IPC: C23C16/44 ,  C23C16/50 ,  H01J37/32 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  C23C16/00

CPC classification number: H01J37/32091 ,  C23C16/4401 ,  C23C16/4405 ,  C23C16/50 ,  H01J37/32082 ,  H01J37/321 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/3145 ,  H01L21/31612 ,  H01L21/3185

Abstract: The invention encompasses a method for sequentially processing separate sets of wafers within a chamber. Each set is subjected to plasma-enhanced deposition of material within the chamber utilizing a plasma that is primarily inductively coupled. After the plasma-enhanced deposition, and while the set remains within the chamber, the plasma is changed to a primarily capacitively coupled plasma. The cycling of the plasma from primarily inductively coupled to primarily capacitively coupled can increase the ratio of processed wafers to plasma reaction chamber internal sidewall cleanings that can be obtained while maintaining low particle counts on the processed wafers.

Abstract translation: 本发明包括用于在腔室内顺序处理单独的晶片组的方法。 使用主要感应耦合的等离子体，使每组在室内进行等离子体增强的材料沉积。 在等离子体增强沉积之后，并且当集合保持在室内时，等离子体被改变为主要的电容耦合等离子体。 等离子体从主要电感耦合到主要电容耦合的循环可以增加处理的晶片与等离子体反应室内部侧壁清洁的比例，其可以在保持处理的晶片上的低颗粒计数的同时获得。

公开(公告)号：US20050009308A1

公开(公告)日：2005-01-13

申请号：US10913555

申请日：2004-08-06

Applicant: Li Li ,  Weimin Li

Inventor： Li Li ,  Weimin Li

IPC: H01L21/762 ,  H01L21/20

CPC classification number: H01L21/316 ,  H01L21/76232 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76837 ,  Y10S438/902

Abstract: A method is disclosed for removing liquids from a semiconductor substrate by contacting the liquid on the substrate with a liquid which attracts the liquid on the substrate, separating the liquids from the substrate, and inducing a phase transition in a layer on the substrate. In particular, the method is applicable to removing water from a water-containing layer on the substrate by contacting the layer with a hygroscopic liquid. Trenches on a substrate can be isolated by filling the trenches with a water-containing gel formed by reacting silane and hydrogen peroxide. The gel is contacted with sulfuric acid to remove a portion of the water from the gel before annealing to form silica in the trenches. Unlike filled trenches formed by conventional technology, there are no voids in the bottom of the trenches. The method is also applicable to forming dielectric layers which cover metal lines, low-dielectric layers, and interlayer dielectric layers. The liquid may be applied to the substrate by chemical vapor deposition or by spin-applying.

Abstract translation: 公开了一种通过使衬底上的液体接触吸附衬底上的液体的液体，将液体与衬底分离并引起衬底上的层中的相变来从半导体衬底去除液体的方法。 特别地，该方法适用于通过使该层与吸湿性液体接触来从基底上的含水层除去水分。 通过用硅烷和过氧化氢反应形成的含水凝胶填充沟槽可以分离衬底上的沟槽。 将凝胶与硫酸接触以在退火之前从凝胶中除去一部分水以在沟槽中形成二氧化硅。 与常规技术形成的填充沟槽不同，沟槽底部没有空隙。 该方法也适用于形成覆盖金属线，低电介质层和层间电介质层的电介质层。 液体可以通过化学气相沉积或通过旋涂施加到基底上。

公开(公告)号：US06676756B1

公开(公告)日：2004-01-13

申请号：US10234729

申请日：2002-08-30

Applicant: Weimin Li ,  Sam Yang

Inventor： Weimin Li ,  Sam Yang

IPC: C23C1600

CPC classification number: C23C16/45523 ,  C23C16/18 ,  H01L28/65

Abstract: A technique for more efficiently forming conductive elements, such as conductive layers and electrodes, using chemical vapor deposition. A conductive precursor gas, such as a platinum precursor gas, having organic compounds to improve step coverage is introduced into a chemical vapor deposition chamber. A reactant is also introduced into the chamber that reacts with residue organic compounds on the conductive element so as to remove the organic compounds from the nucleating sites to thereby permit more efficient subsequent chemical vapor deposition of conductive elements.

Abstract translation: 一种使用化学气相沉积更有效地形成诸如导电层和电极的导电元件的技术。 将具有改善步骤覆盖度的有机化合物的导电前体气体，例如铂前体气体引入化学气相沉积室。 反应物也被引入室中，与导电元件上的残余有机化合物反应，以便从成核位置除去有机化合物，从而允许更有效的后续化学气相沉积导电元件。

公开(公告)号：US06573571B2

公开(公告)日：2003-06-03

申请号：US10005439

申请日：2001-12-03

Applicant: Weimin Li

Inventor： Weimin Li

IPC: H01L2976

CPC classification number: H01L21/76855 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76859

Abstract: The present invention relates to a semiconductor structure including metal nitride and metal silicide, where a metal silicide layer is formed upon an active area that is part of a junction in order to facilitate further miniaturization that is demanded and dictated by the need for smaller devices. A single PECVD process makes three distinct depositions. First, a metal silicide forms by the reaction: MHal+Si+H2MSix+HHal, where M represents a metal and Hal represents a preferred halogen or the like. Second, a metal nitride forms upon areas not containing Si by the reaction: MHal+N2+H2MN+HHal. Third, a metal nitride forms upon areas of evolving metal silicide due to a diffusion barrier effect that makes formation of the metal silicide self limiting. Ultimately, a metal nitride layer will be uniformly disposed in a substantially uniform composition covering all underlying structures upon a semiconductor substrate. The inventive method can be used to form a semiconductor structure having a semiconductive substrate with an electrically active region therein, where a structure projects from the semiconductive substrate adjacent to the electrically active region. A first metal silicide is upon the electrically active region and a second metal silicide is upon the structure. A metal nitride layer extends continuously from the first metal silicide to the second metal silicide. An electrically conductive metallization material is upon the metal nitride layer.

Abstract translation: 本发明涉及包括金属氮化物和金属硅化物的半导体结构，其中在作为结的一部分的有源区上形成金属硅化物层，以便于由需要较小器件所要求和规定的进一步小型化。 单个PECVD过程产生三个不同的沉积。 首先，通过反应形成金属硅化物：MHal + Si + H2 MS xix + HHal，其中M表示金属，Hal表示优选的卤素等。 第二，通过反应在不含Si的区域形成金属氮化物：MHal + N2 + H2 MN + HHal。 第三，由于扩散阻挡效应使得金属硅化物的形成在金属硅化物的区域上形成金属氮化物，从而形成金属硅化物自限制。 最终，金属氮化物层将被均匀地布置成覆盖半导体衬底上的所有下面的结构的基本均匀的组成。 本发明的方法可用于形成具有其中具有电活性区域的半导体衬底的半导体结构，其中结构从邻近电活性区域的半导体衬底突出。 第一金属硅化物在电活性区上，第二金属硅化物在该结构上。 金属氮化物层从第一金属硅化物连续延伸到第二金属硅化物。 导电金属化材料在金属氮化物层上。