公开(公告)号：US20110291256A1

公开(公告)日：2011-12-01

申请号：US12791443

申请日：2010-06-01

Applicant: Rainer Steiner ,  Jens Pohl ,  Werner Robl ,  Gottfried Beer

Inventor： Rainer Steiner ,  Jens Pohl ,  Werner Robl ,  Gottfried Beer

IPC: H01L23/48 ,  H01L21/50

CPC classification number: H01L24/03 ,  H01L23/3114 ,  H01L24/05 ,  H01L24/96 ,  H01L2224/0332 ,  H01L2224/0345 ,  H01L2224/0346 ,  H01L2224/04105 ,  H01L2224/05001 ,  H01L2224/05082 ,  H01L2224/05546 ,  H01L2224/05548 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2924/01013 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01059 ,  H01L2924/01068 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/18162 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A semiconductor chip includes a contact pad on a main surface of the chip. An electrically conductive layer is applied onto the contact pad. The main surface of the semiconductor chip is covered with an insulating layer. An electrically conductive contact area is formed within the insulating layer such that the contact area and the insulating layer include coplanar exposed surfaces and the contact area is electrically connected with the electrically conductive layer and includes an extension which is greater than the extension of the electrically conductive layer along a direction parallel to the main surface of the semiconductor chip.

Abstract translation: 半导体芯片包括在芯片的主表面上的接触焊盘。 将导电层施加到接触垫上。 半导体芯片的主表面被绝缘层覆盖。 导电接触区域形成在绝缘层内，使得接触区域和绝缘层包括共面的暴露表面，并且接触区域与导电层电连接，并且包括延伸部，其延伸大于导电 层沿着与半导体芯片的主表面平行的方向。

公开(公告)号：US07909978B2

公开(公告)日：2011-03-22

申请号：US11737536

申请日：2007-04-19

Applicant: Johannes Lodermeyer ,  Edmund Riedl ,  Werner Robl

Inventor： Johannes Lodermeyer ,  Edmund Riedl ,  Werner Robl

IPC: C25D3/04 ,  C25D3/06 ,  C25D3/10

CPC classification number: C25D7/12 ,  C25D3/06 ,  C25D3/10 ,  C25D21/04

Abstract: A method of making an integrated circuit including a composition of matter for electrodepositing of chromium is disclosed. One embodiment provides a bath having a solution of a chromium salt in a substantially anhydrous organic solvent, to uses of certain chromium salts for electrodepositing and to processes for electrodepositing chromium.

Abstract translation: 公开了一种制造集成电路的方法，该集成电路包括用于电沉积铬的物质组合物。 一个实施方案提供了一种具有铬盐在基本上无水的有机溶剂中的溶液的浴，用于某些铬盐的电沉积和电沉积铬的方法。

公开(公告)号：US20100207272A1

公开(公告)日：2010-08-19

申请号：US12389103

申请日：2009-02-19

Applicant: Rainer Steiner ,  Jens Pohl ,  Werner Robl ,  Markus Brunnbauer ,  Gottfried Beer

Inventor： Rainer Steiner ,  Jens Pohl ,  Werner Robl ,  Markus Brunnbauer ,  Gottfried Beer

IPC: H01L23/498 ,  H01L21/768

CPC classification number: H01L23/528 ,  H01L21/561 ,  H01L21/568 ,  H01L23/5283 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/19 ,  H01L24/20 ,  H01L2224/02351 ,  H01L2224/03462 ,  H01L2224/0361 ,  H01L2224/03622 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05006 ,  H01L2224/05012 ,  H01L2224/05017 ,  H01L2224/05546 ,  H01L2224/05548 ,  H01L2224/05553 ,  H01L2224/05555 ,  H01L2224/05557 ,  H01L2224/05559 ,  H01L2224/05567 ,  H01L2224/05568 ,  H01L2224/05647 ,  H01L2224/12105 ,  H01L2224/13023 ,  H01L2224/131 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/1461 ,  H01L2224/83 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/00

Abstract: A semiconductor device includes a chip comprising a contact element, a structured dielectric layer over the chip, and a conductive element coupled to the contact element. The conductive element comprises a first portion embedded in the structured dielectric layer, a second portion at least partially spaced apart from the first portion and embedded in the structured dielectric layer, and a third portion contacting a top of the structured dielectric layer and extending at least vertically over the first portion and the second portion.

Abstract translation: 半导体器件包括芯片，其包括接触元件，芯片上方的结构化介电层以及耦合到接触元件的导电元件。 导电元件包括​​嵌入结构化电介质层中的第一部分，与第一部分至少部分间隔开并嵌入结构化介电层的第二部分，以及接触结构化介电层顶部并至少延伸的第三部分 垂直于第一部分和第二部分。

公开(公告)号：US06960306B2

公开(公告)日：2005-11-01

申请号：US10207773

申请日：2002-07-31

Applicant: Roy C. Iggulden ,  Padraic Shafer ,  Kwong Hon (Keith) Wong ,  Michael M. Iwatake ,  Jay W. Strane ,  Thomas Goebel ,  Donna D. Miura ,  Chet Dziobkowski ,  Werner Robl ,  Brian Hughes

Inventor： Roy C. Iggulden ,  Padraic Shafer ,  Kwong Hon (Keith) Wong ,  Michael M. Iwatake ,  Jay W. Strane ,  Thomas Goebel ,  Donna D. Miura ,  Chet Dziobkowski ,  Werner Robl ,  Brian Hughes

IPC: H01L21/3205 ,  H01L21/768 ,  H01L21/00

CPC classification number: H01L21/32051 ,  H01L21/76838

Abstract: In a method of fabricating a metallization structure during formation of a microelectronic device, the improvement of reducing metal shorts in blanket metal deposition layers later subjected to reactive ion etching, comprising: a) depositing on a first underlayer, a blanket of an aluminum compound containing an electrical short reducing amount of an alloy metal in electrical contact with the underlayer; b) depositing a photoresist and exposing and developing to leave patterns of photoresist on the blanket aluminum compound containing an electrical short reducing amount of an alloy metal; and c) reactive ion etching to obtain an aluminum compound containing an alloy metal line characterized by reduced shorts in amounts less than the aluminum compound without said short reducing amount of alloy metal.

Abstract translation: 在微电子器件形成期间制造金属化结构的方法中，改进后续进行反应离子蚀刻的覆盖金属沉积层中的金属短路，包括：a）沉积在第一底层上， 与底层电接触的合金金属的电短路减少量; b）沉积光致抗蚀剂并曝光和显影以在包含合金金属的电短缩量的橡皮布铝化合物上留下光刻胶图案; 和c）反应离子蚀刻，以获得含有合金金属线的铝化合物，其特征在于少于铝化合物的短路量，而没有所述合金金属的减少量。

公开(公告)号：US08338317B2

公开(公告)日：2012-12-25

申请号：US13080813

申请日：2011-04-06

Applicant: Manfred Engelhardt ,  Hans-Joerg Timme ,  Ivan Nikitn ,  Manfred Frank ,  Thomas Kunstmann ,  Werner Robl ,  Guenther Ruhl

Inventor： Manfred Engelhardt ,  Hans-Joerg Timme ,  Ivan Nikitn ,  Manfred Frank ,  Thomas Kunstmann ,  Werner Robl ,  Guenther Ruhl

IPC: H01L21/00

CPC classification number: H01L33/405 ,  C23C4/08 ,  C23C4/134 ,  H01L21/02115 ,  H01L21/02118 ,  H01L21/02203 ,  H01L21/02263 ,  H01L21/0331 ,  H01L21/2855 ,  H01L21/6835 ,  H01L21/76877 ,  H01L21/76885 ,  H01L24/05 ,  H01L24/06 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/743 ,  H01L24/83 ,  H01L25/0657 ,  H01L25/074 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/04026 ,  H01L2224/04105 ,  H01L2224/05166 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/06181 ,  H01L2224/27418 ,  H01L2224/27622 ,  H01L2224/29111 ,  H01L2224/29118 ,  H01L2224/29139 ,  H01L2224/29147 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/83191 ,  H01L2224/83801 ,  H01L2224/83805 ,  H01L2224/8381 ,  H01L2224/8382 ,  H01L2224/94 ,  H01L2924/01029 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/181 ,  H05H1/42 ,  H05K2203/1344 ,  H01L2924/00 ,  H01L2224/27 ,  H01L2924/0105

Abstract: According to various embodiments, a method for processing a semiconductor wafer or die is provided including supplying particles to a plasma such that the particles are activated by the plasma and spraying the activated particles on the semiconductor wafer or die to generate a particle layer on the semiconductor wafer or die.

Abstract translation: 根据各种实施例，提供了一种用于处理半导体晶片或裸片的方法，包括向等离子体供应颗粒，使得颗粒被等离子体激活并将活化的颗粒喷射在半导体晶片或裸片上，以在半导体上产生颗粒层 晶片或模具。

公开(公告)号：US20120256323A1

公开(公告)日：2012-10-11

申请号：US13080813

申请日：2011-04-06

Applicant: Manfred Engelhardt ,  Hans-Joerg Timme ,  Ivan Nikitn ,  Manfred Frank ,  Thomas Kunstmann ,  Werner Robl ,  Guenther Ruhl

Inventor： Manfred Engelhardt ,  Hans-Joerg Timme ,  Ivan Nikitn ,  Manfred Frank ,  Thomas Kunstmann ,  Werner Robl ,  Guenther Ruhl

IPC: H01L23/485 ,  H01L21/768 ,  B05B5/03

CPC classification number: H01L33/405 ,  C23C4/08 ,  C23C4/134 ,  H01L21/02115 ,  H01L21/02118 ,  H01L21/02203 ,  H01L21/02263 ,  H01L21/0331 ,  H01L21/2855 ,  H01L21/6835 ,  H01L21/76877 ,  H01L21/76885 ,  H01L24/05 ,  H01L24/06 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/743 ,  H01L24/83 ,  H01L25/0657 ,  H01L25/074 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/04026 ,  H01L2224/04105 ,  H01L2224/05166 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/06181 ,  H01L2224/27418 ,  H01L2224/27622 ,  H01L2224/29111 ,  H01L2224/29118 ,  H01L2224/29139 ,  H01L2224/29147 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/83191 ,  H01L2224/83801 ,  H01L2224/83805 ,  H01L2224/8381 ,  H01L2224/8382 ,  H01L2224/94 ,  H01L2924/01029 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/181 ,  H05H1/42 ,  H05K2203/1344 ,  H01L2924/00 ,  H01L2224/27 ,  H01L2924/0105

Abstract: According to various embodiments, a method for processing a semiconductor wafer or die is provided including supplying particles to a plasma such that the particles are activated by the plasma and spraying the activated particles on the semiconductor wafer or die to generate a particle layer on the semiconductor wafer or die.

Abstract translation: 根据各种实施例，提供了一种用于处理半导体晶片或裸片的方法，包括向等离子体供应颗粒，使得颗粒被等离子体激活并将活化的颗粒喷射在半导体晶片或裸片上，以在半导体上产生颗粒层 晶片或模具。

公开(公告)号：US07974120B2

公开(公告)日：2011-07-05

申请号：US12358721

申请日：2009-01-23

Applicant: Gerhard Poeppel ,  Hans-Joerg Timme ,  Werner Robl

Inventor： Gerhard Poeppel ,  Hans-Joerg Timme ,  Werner Robl

IPC: G11C11/00

CPC classification number: H01L29/66984 ,  B82Y25/00 ,  H01F10/3254

Abstract: According to an embodiment of the present invention, a spin device includes an intermediate semiconductor region arranged between a first terminal and a second terminal, wherein the first terminal is adapted to provide a current having a first degree of spin polarization to the intermediate semiconductor region, and wherein the second terminal is adapted to output the current having a second degree of spin polarization. The spin device further includes a spin selective scattering structure abutting the intermediate semiconductor region, the spin selective scattering structure being adapted such that the first degree of spin polarization is altered to be the second degree, wherein the spin selective scattering structure comprises a control electrode being electrically insulated from the intermediate semiconductor region, and wherein the control electrode is adapted to apply an electrical field perpendicular to a direction of the current through the intermediate semiconductor region to control a magnitude of the current.

Abstract translation: 根据本发明的实施例，自旋装置包括布置在第一端子和第二端子之间的中间半导体区域，其中第一端子适于向中间半导体区域提供具有第一自旋极化度的电流， 并且其中所述第二端子适于输出具有第二自旋极化度的电流。 自旋装置还包括邻接中间半导体区域的自旋选择性散射结构，自旋选择性散射结构适于使第一自旋极化程度改变为第二程度，其中自旋选择性散射结构包括控制电极 与中间半导体区域电绝缘，并且其中控制电极适于施加垂直于通过中间半导体区域的电流的方向的电场以控制电流的大小。

公开(公告)号：US20080257743A1

公开(公告)日：2008-10-23

申请号：US11737536

申请日：2007-04-19

Applicant: Johannes Lodermeyer ,  Edmund Riedl ,  Werner Robl

Inventor： Johannes Lodermeyer ,  Edmund Riedl ,  Werner Robl

IPC: C09D5/00 ,  C25C7/00 ,  C25D7/12

CPC classification number: C25D7/12 ,  C25D3/06 ,  C25D3/10 ,  C25D21/04

Abstract: A method of making an integrated circuit including a composition of matter for electrodepositing of chromium is disclosed. One embodiment provides a bath having a solution of a chromium salt in a substantially anhydrous organic solvent, to uses of certain chromium salts for electrodepositing and to processes for electrodepositing chromium.

Abstract translation: 公开了一种制造集成电路的方法，该集成电路包括用于电沉积铬的物质组合物。 一个实施方案提供了一种具有铬盐在基本上无水的有机溶剂中的溶液的浴，用于某些铬盐的电沉积和电沉积铬的方法。