INTEGRATED CIRCUIT PACKAGE AND METHOD FOR FABRICATION THEREOF
    21.
    发明申请
    INTEGRATED CIRCUIT PACKAGE AND METHOD FOR FABRICATION THEREOF 有权
    集成电路封装及其制造方法

    公开(公告)号:US20100276774A1

    公开(公告)日:2010-11-04

    申请号:US12836477

    申请日:2010-07-14

    IPC分类号: H01L31/0203 H01L31/02

    摘要: The invention provides an integrated circuit package and method of fabrication thereof. The integrated circuit package comprises an integrated circuit chip having a photosensitive device thereon; a bonding pad formed on an upper surface of the integrated circuit chip and electrically connected to the photosensitive device; a barrier formed between the bonding pad and the photosensitive device; and a conductive layer formed on a sidewall of the integrated circuit chip and electrically connected to the bonding pad. The barrier layer blocks overflow of the adhesive layer into a region, on which the photosensitive device is formed, to improve yield for fabricating the integrated circuit package.

    摘要翻译: 本发明提供一种集成电路封装及其制造方法。 集成电路封装包括其上具有光敏器件的集成电路芯片; 焊盘,形成在集成电路芯片的上表面上并电连接到感光器件; 在焊盘和感光装置之间形成的屏障; 以及形成在集成电路芯片的侧壁上并电连接到接合焊盘的导电层。 阻挡层阻止粘合剂层溢出到形成有感光装置的区域中,以提高制造集成电路封装的成品率。

    Methods of forming planarized multilevel metallization in an integrated circuit
    23.
    发明授权
    Methods of forming planarized multilevel metallization in an integrated circuit 有权
    在集成电路中形成平面化多层金属化的方法

    公开(公告)号:US07314813B2

    公开(公告)日:2008-01-01

    申请号:US10976539

    申请日:2004-10-29

    IPC分类号: H01L21/20

    摘要: A method is provided for forming a semiconductor device that reduces metal-stress-induced photo misalignment by incorporating a multi-layered anti-reflective coating over a metal layer. The method includes providing a substrate with a conductive layer formed over the substrate, depositing a multi-layered anti-reflective coating (including alternating layers of titanium and titanium nitride), defining a plurality of conductive lines in connection with a first etching step, depositing a dielectric layer, and defining at least one via in connection with a second etching step.

    摘要翻译: 提供了一种形成半导体器件的方法,该半导体器件通过在金属层上并入多层抗反射涂层来减少金属应力诱导的光失准。 该方法包括:在衬底上形成导电层的衬底,沉积多层抗反射涂层(包括钛和氮化钛的交替层),与第一蚀刻步骤相结合形成多条导电线,沉积 介电层,并且与第二蚀刻步骤相关地限定至少一个通孔。

    Method of reducing alignment measurement errors between device layers
    24.
    发明授权
    Method of reducing alignment measurement errors between device layers 有权
    降低器件层之间校准测量误差的方法

    公开(公告)号:US07192845B2

    公开(公告)日:2007-03-20

    申请号:US10864562

    申请日:2004-06-08

    摘要: An integrated circuit in which measurement of the alignment between subsequent layers has less susceptibility to stress induced shift. A first layer of the structure has a first overlay mark. A second and/or a third layer are formed in the alignment structure and on the first layer. Portions of the second and/or third layer are selectively removed from regions in and around the first overlay mark. A second overlay mark is formed and aligned to the first overlay mark. The alignment between the second overlay mark and first overlay mark may be measured with an attenuated error due to reflection and refraction or due to an edge profile shift of the first overlay mark.

    摘要翻译: 一种集成电路,其中后续层之间的对准测量对应力诱导偏移具有较小的敏感性。 该结构的第一层具有第一覆盖标记。 在对准结构中和第一层上形成第二层和/或第三层。 第二层和/或第三层的部分从第一重叠标记中和周围的区域选择性地去除。 形成第二重叠标记并与第一覆盖标记对准。 可以由于反射和折射或由于第一重叠标记的边缘轮廓偏移而具有衰减误差来测量第二覆盖标记和第一覆盖标记之间的对准。

    Mask and pattern forming method by using the same
    25.
    发明申请
    Mask and pattern forming method by using the same 有权
    掩模和图案形成方法使用它

    公开(公告)号:US20070054197A1

    公开(公告)日:2007-03-08

    申请号:US11223480

    申请日:2005-09-08

    申请人: Yu-Lin Yen

    发明人: Yu-Lin Yen

    IPC分类号: G03C5/00 G03F1/00

    CPC分类号: G03F1/36 G03F1/32

    摘要: The present invention provides a mask comprising a substrate, a plurality of strip patterns and at least an assist pattern. The strip patterns are disposed on the substrate and arranged in parallel to one another. The assist pattern is in a strip shape and disposed on the substrate. The assist pattern is arranged in parallel to and outside of the outermost strip pattern of the strip patterns. The assist pattern and the strip pattern have the same phase, while the assist pattern has a width larger than that of the strip patterns. When the mask is applied for exposure process, the pattern of the assist pattern will not be transferred to the underlying layer to be exposed.

    摘要翻译: 本发明提供了一种掩模,其包括基底,多个条状图案和至少一个辅助图案。 带状图案设置在基板上并且彼此平行地布置。 辅助图案为带状,并设置在基板上。 辅助图案平行于带状图案的最外面带状图案并排布置。 辅助图案和带状图案具有相同的相位,而辅助图案的宽度大于带状图案的宽度。 当掩模用于曝光处理时,辅助图案的图案将不会转移到要暴露的下层。

    Chip package and method for forming the same
    26.
    发明授权
    Chip package and method for forming the same 有权
    芯片封装及其形成方法

    公开(公告)号:US09024437B2

    公开(公告)日:2015-05-05

    申请号:US13524985

    申请日:2012-06-15

    IPC分类号: H01L23/48 H01L21/78 H01L23/31

    摘要: An embodiment of the invention provides a chip package which includes: a substrate having a plurality of sides and a plurality of corner regions, wherein each of the corner regions is located at an intersection of at least two of the sides of the substrate; a device region formed in the substrate; a conducting layer disposed on the substrate and electrically connected to the device region; an insulating layer disposed between the substrate and the conducting layer; and a carrier substrate, wherein the substrate is disposed on the carrier substrate, and the substrate has a recess extending towards the carrier substrate in at least one of the corner regions.

    摘要翻译: 本发明的实施例提供一种芯片封装,其包括:具有多个侧面和多个拐角区域的基板,其中每个所述拐角区域位于所述基板的至少两个侧面的相交处; 形成在所述基板中的器件区域; 导电层,其设置在所述基板上并电连接到所述器件区域; 设置在所述基板和所述导电层之间的绝缘层; 以及载体基板,其中所述基板设置在所述载体基板上,并且所述基板具有在至少一个所述拐角区域中朝向所述载体基板延伸的凹部。

    Chip package
    28.
    发明授权
    Chip package 有权
    芯片封装

    公开(公告)号:US08581386B2

    公开(公告)日:2013-11-12

    申请号:US13350690

    申请日:2012-01-13

    IPC分类号: H01L23/04 H01L23/12

    摘要: An embodiment of the invention provides a chip package, which includes: a semiconductor substrate having a device region and a non-device region neighboring the device region; a package layer disposed on the semiconductor substrate; a spacing layer disposed between the semiconductor substrate and the package layer and surrounding the device region and the non-device region; a ring structure disposed between the semiconductor substrate and the package layer, and between the spacing layer and the device region, and surrounding a portion of the non-device region; and an auxiliary pattern including a hollow pattern formed in the spacing layer or the ring structure, a material pattern located between the spacing layer and the device region, or combinations thereof.

    摘要翻译: 本发明的一个实施例提供了一种芯片封装,其包括:半导体衬底,具有与器件区域相邻的器件区域和非器件区域; 封装层,设置在所述半导体衬底上; 间隔层,设置在所述半导体衬底和所述封装层之间并且围绕所述器件区域和所述非器件区域; 设置在所述半导体衬底和所述封装层之间以及所述间隔层和所述器件区域之间并围绕所述非器件区域的一部分的环形结构; 以及包括形成在间隔层或环结构中的中空图案的辅助图案,位于间隔层和器件区域之间的材料图案,或其组合。

    Method for forming a material layer
    30.
    发明授权
    Method for forming a material layer 有权
    形成材料层的方法

    公开(公告)号:US08415088B2

    公开(公告)日:2013-04-09

    申请号:US11377159

    申请日:2006-03-15

    申请人: Yu-Lin Yen

    发明人: Yu-Lin Yen

    IPC分类号: G06F7/26

    CPC分类号: G03F7/091 G03F7/095 G03F7/168

    摘要: A method for forming a material layer with an anti-reflective layer as the top surface. The method comprises steps of providing a material layer and performing an ion implantation process to change a plurality of physical properties of a portion of the material layer near a top surface of the material layer so as to covert the portion of the material layer into an anti-reflective layer.

    摘要翻译: 一种形成具有抗反射层作为顶表面的材料层的方法。 该方法包括以下步骤:提供材料层并执行离子注入工艺以改变材料层的顶表面附近的材料层的一部分的多个物理性能,以将材料层的该部分隐蔽成反层 反射层。