公开(公告)号：US08941077B2

公开(公告)日：2015-01-27

申请号：US13280162

申请日：2011-10-24

Applicant: Nicholas White ,  Zhimin Wan ,  Erik Collart

Inventor： Nicholas White ,  Zhimin Wan ,  Erik Collart

IPC: H01J1/88 ,  H01J3/26 ,  H01J3/04 ,  H01J37/317

CPC classification number: H01J37/05 ,  H01J3/04 ,  H01J3/26 ,  H01J37/1472 ,  H01J37/3007 ,  H01J37/3171 ,  H01J2237/04756 ,  H01J2237/053 ,  H01J2237/057 ,  H01J2237/151 ,  H01J2237/303 ,  H01J2237/31701

Abstract: A deceleration apparatus capable of decelerating a short spot beam or a tall ribbon beam is disclosed. In either case, effects tending to degrade the shape of the beam profile are controlled. Caps to shield the ion beam from external potentials are provided. Electrodes whose position and potentials are adjustable are provided, on opposite sides of the beam, to ensure that the shape of the decelerating and deflecting electric fields does not significantly deviate from the optimum shape, even in the presence of the significant space-charge of high current low-energy beams of heavy ions.

Abstract translation: 公开了一种减速装置，能够使短点光束或高色带光束减速。 在任一种情况下，都会控制趋向于降低光束轮廓形状的效果。 提供了用于将离子束屏蔽到外部电位的盖子。 其位置和电位可调的电极设置在梁的相对两侧，以确保减速和偏转电场的形状不会显着偏离最佳形状，即使存在显着的空间电荷高 目前低能量的重离子束。

公开(公告)号：US08835882B2

公开(公告)日：2014-09-16

申请号：US13608941

申请日：2012-09-10

Applicant: Wei-Cheng Lin ,  Zhimin Wan

Inventor： Wei-Cheng Lin ,  Zhimin Wan

IPC: G21K5/04 ,  H01J37/304 ,  H01J37/244 ,  H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/244 ,  H01J37/304 ,  H01J2237/24507 ,  H01J2237/24528 ,  H01J2237/30472

Abstract: The invention provides a method to real time monitor the ion beam. Initially, turn on an ion implanter which has a wafer holder, a Faraday cup and a measurement device positioned close to a special portion of a pre-determined ion beam path of the ion beam, wherein the Faraday cup is positioned downstream the wafer holder and the measurement device is positioned upstream the wafer holder. Then, measure a first ion beam current received by the Faraday cup and a second ion beam current received by the measurement device. By continuously measuring the first and second ion beam current, the ion beam is real-time monitored even the Faraday cup is at least partially blocked during the period of moving the wafer holder across the ion beam. Accordingly, the on-going implantation process and the operation of the implanter can be adjusted.

Abstract translation: 本发明提供了一种实时监测离子束的方法。 最初，打开一个离子注入机，该离子注入机具有晶片保持器，法拉第杯和靠近离子束预定离子束路径的特殊部分的测量装置，其中法拉第杯位于晶片保持器的下游， 测量装置位于晶片保持器的上游。 然后，测量由法拉第杯接收的第一离子束电流和由测量装置接收的第二离子束电流。 通过连续地测量第一和第二离子束电流，即使在移动晶片夹持器穿过离子束的时段期间，即使法拉第杯至少部分被阻挡，离子束也被实时监测。 因此，可以调整正在进行的植入过程和注入机的操作。

公开(公告)号：US20120196047A1

公开(公告)日：2012-08-02

申请号：US13016912

申请日：2011-01-28

Applicant: Cheng-Hui Shen ,  Zhimin Wan

Inventor： Cheng-Hui Shen ,  Zhimin Wan

IPC: C23C14/48 ,  G06G7/62 ,  G06F17/10 ,  B05C11/00

CPC classification number: H01J37/3171 ,  H01J2237/304 ,  H01J2237/31703

Abstract: To select a relative velocity profile to be used in scanning an actual work piece with an ion implant beam of an ion implantation tool, the implantation of a virtual work piece is simulated. A dose distribution is calculated across the virtual work piece based on an implant beam profile and a relative velocity profile. A new relative velocity profile is then determined based on the calculated dose distribution and the relative velocity profile used in calculating the dose distribution. A new dose distribution is then calculated using the new relative velocity profile. A new relative velocity profile is determined and a corresponding new dose distribution is calculated iteratively until the new dose distribution meets one or more predetermined criteria. The new relative velocity profile is stored as the selected relative velocity profile when the new dose distribution meets the one or more predetermined criteria.

Abstract translation: 为了选择用离子注入工具的离子注入光束扫描实际工件所使用的相对速度分布，模拟了虚拟工件的注入。 基于植入物轮廓和相对速度分布，跨虚拟工件计算剂量分布。 然后基于计算的剂量分布和用于计算剂量分布的相对速度分布来确定新的相对速度分布。 然后使用新的相对速度分布计算新的剂量分布。 确定新的相对速度分布，并且迭代地计算相应的新剂量分布，直到新的剂量分布满足一个或多个预定标准。 当新剂量分布满足一个或多个预定标准时，新的相对速度分布被存储为所选择的相对速度分布。

公开(公告)号：US08124508B2

公开(公告)日：2012-02-28

申请号：US12750983

申请日：2010-03-31

Applicant: John D. Pollock ,  Zhimin Wan ,  Erik Collart

Inventor： John D. Pollock ,  Zhimin Wan ,  Erik Collart

IPC: H01L21/425

CPC classification number: C23C14/48 ,  H01L21/26513 ,  H01L21/26593 ,  H01L21/324

Abstract: Techniques for low temperature ion implantation are provided to improve the throughput. During a low temperature ion implantation, an implant process may be started before the substrate temperature is decreased to be about to a prescribed implant temperature by a cooling process, and a heating process may be started to increase the substrate temperature before the implant process is finished. Moreover, one or more temperature adjust process may be performed during one or more portion of the implant process, such that the substrate temperature may be controllably higher than the prescribe implant temperature during the implant process.

公开(公告)号：US20110244669A1

公开(公告)日：2011-10-06

申请号：US12750983

申请日：2010-03-31

Applicant: JOHN D. POLLOCK ,  ZHIMIN WAN ,  ERIK COLLART

Inventor： JOHN D. POLLOCK ,  ZHIMIN WAN ,  ERIK COLLART

IPC: H01L21/265

CPC classification number: C23C14/48 ,  H01L21/26513 ,  H01L21/26593 ,  H01L21/324

Abstract: Techniques for low temperature ion implantation are provided to improve the throughput. During a low temperature ion implantation, an implant process may be started before the substrate temperature is decreased to be about to a prescribed implant temperature by a cooling process, and a heating process may be started to increase the substrate temperature before the implant process is finished. Moreover, one or more temperature adjust process may be performed during one or more portion of the implant process, such that the substrate temperature may be controllably higher than the prescribe implant temperature during the implant process.

Abstract translation: 提供了用于低温离子注入的技术以提高生产量。 在低温离子注入期间，可以在通过冷却过程将衬底温度降低到约为规定的植入温度之前开始植入工艺，并且可以开始加热过程以在植入过程完成之前增加衬底温度 。 此外，可以在植入过程的一个或多个部分期间执行一个或多个温度调节过程，使得在植入过程期间，衬底温度可以可控地高于处方植入物温度。

公开(公告)号：US20110233431A1

公开(公告)日：2011-09-29

申请号：US12748877

申请日：2010-03-29

Applicant: Zhimin WAN ,  John D. Pollock ,  Don Berrian ,  Causon Ko-Chuan Jen

Inventor： Zhimin WAN ,  John D. Pollock ,  Don Berrian ,  Causon Ko-Chuan Jen

IPC: H01J37/317 ,  H01J37/02

CPC classification number: C23C14/48 ,  H01J37/09 ,  H01J37/3171 ,  H01J2237/0455 ,  H01J2237/24542 ,  H01J2237/31711

Abstract: A variable aperture within an aperture device is used to shape the ion beam before the substrate is implanted by shaped ion beam, especially to finally shape the ion beam in a position right in front of the substrate. Hence, different portions of a substrate, or different substrates, can be implanted respectively by different shaped ion beams without going through using multiple fixed apertures or retuning the ion beam each time. In other words, different implantations may be achieved respectively by customized ion beams without high cost (use multiple fixed aperture devices) and complex operation (retuning the ion beam each time). Moreover, the beam tune process for acquiring a specific ion beam to be implanted may be accelerated, to be faster than using multiple fixed aperture(s) and/or retuning the ion beam each time, because the adjustment of the variable aperture may be achieved simply by mechanical operation.

Abstract translation: 在通过成形离子束注入衬底之前，使用孔装置内的可变孔径来形成离子束，特别是最终在离开衬底前方的位置形成离子束。 因此，可以通过不同的成形离子束分别注入衬底或不同衬底的不同部分，而不需要通过使用多个固定孔或每次重新调整离子束。 换句话说，可以通过定制的离子束分别实现不同的注入，而不需要高成本（使用多个固定孔径器件）和复杂的操作（每次重新调整离子束）。 此外，可以加速用于获取要注入的特定离子束的光束调整过程，以便每次都比使用多个固定孔径和/或重新调整离子束更快，因为可以实现可变孔径的调节 简单地通过机械操作。

公开(公告)号：US20110229987A1

公开(公告)日：2011-09-22

申请号：US12727573

申请日：2010-03-19

Applicant: JOHN D. POLLOCK ,  ZHIMIN WAN ,  ERIK COLLART

Inventor： JOHN D. POLLOCK ,  ZHIMIN WAN ,  ERIK COLLART

IPC: H01L21/66 ,  H01L21/265

CPC classification number: H01L21/265 ,  H01J2237/2001 ,  H01J2237/31701 ,  H01L21/67248 ,  Y10S438/905

Abstract: Techniques for low temperature ion implantation are provided to improve throughput. Specifically, the pressure of the backside gas may temporarily, continually or continuously increase before the starting of the implant process, such that the wafer may be quickly cooled down from room temperature to be essentially equal to the prescribed implant temperature. Further, after the vacuum venting process, the wafer may wait an extra time in the load lock chamber before the wafer is moved out the ion implanter, in order to allow the wafer temperature to reach a higher temperature quickly for minimizing water condensation on the wafer surface. Furthermore, to accurately monitor the wafer temperature during a period of changing wafer temperature, a non-contact type temperature measuring device may be used to monitor wafer temperature in a real time manner with minimized condensation.

Abstract translation: 提供了低温离子注入技术，以提高产量。 具体地说，在植入过程开始之前，背面气体的压力可以暂时地，持续地或连续增加，使得晶片可以从室温快速冷却到基本等于规定的植入温度。 此外，在真空排气过程之后，晶片可以在晶片移出离子注入机之前在加载锁定室中等待额外的时间，以便允许晶片温度快速达到更高的温度以使晶片上的水冷凝最小化 表面。 此外，为了在晶片温度变化期间精确地监视晶片温度，可以使用非接触型温度测量装置以最小化的冷凝实时监测晶片温度。

公开(公告)号：US20100310341A1

公开(公告)日：2010-12-09

申请号：US12479288

申请日：2009-06-05

Applicant: Peter MOK ,  Ko-Chuan Jen ,  Zhimin Wan

Inventor： Peter MOK ,  Ko-Chuan Jen ,  Zhimin Wan

IPC: H01L21/673

CPC classification number: H01L21/68764 ,  H01J37/20 ,  H01J37/3171 ,  H01J2237/20207 ,  H01J2237/20228 ,  H01J2237/204 ,  H01L21/67213 ,  Y10T29/53961

Abstract: A system and a method for moving a wafer during scanning the wafer by an ion beam. The proposed system includes an extendable/retractable arm, a holding apparatus and a driving apparatus. At least a length of the extendable/retractable arm is adjustable. The holding apparatus is capable of holding a wafer and is fixed on a specific portion of the extendable/retractable arm. Furthermore, the driving apparatus is capable of extending and/or retracting the extendable/retractable arm, such that the holding apparatus is moved together with the specific portion. In addition, the proposed method includes the following steps. First, hold the wafer by a holding apparatus fixed on a specific portion of an extendable/retractable arm. After that, adjust a length of the extendable/retractable. Therefore, the holding apparatus, i.e. the wafer, can be moved by the extension/retraction of the extendable/retractable arm.

Abstract translation: 一种用于在通过离子束扫描晶片期间移动晶片的系统和方法。 所提出的系统包括可伸缩臂，保持装置和驱动装置。 可伸缩臂的至少一段长度是可调节的。 保持装置能够保持晶片并固定在可伸缩臂的特定部分上。 此外，驱动装置能够延伸和/或缩回可伸缩臂，使得保持装置与特定部分一起移动。 此外，所提出的方法包括以下步骤。 首先，通过固定在可伸缩臂的特定部分上的保持装置来保持晶片。 之后，调整可伸缩的长度。 因此，保持装置即晶片可以通过伸缩臂的伸缩来移动。

公开(公告)号：US07750323B1

公开(公告)日：2010-07-06

申请号：US12465189

申请日：2009-05-13

Applicant: Zhimin Wan ,  Cheng-Hui Shen ,  Ko-Chuan Jen

Inventor： Zhimin Wan ,  Cheng-Hui Shen ,  Ko-Chuan Jen

IPC: H01J37/317 ,  H01J37/08 ,  H01L21/265

CPC classification number: H01J37/3172 ,  H01J37/3023 ,  H01J2237/043 ,  H01J2237/045 ,  H01J2237/30461 ,  H01J2237/30477 ,  H01J2237/30483

Abstract: An ion implanter and a method for implanting a wafer are provided, wherein the method includes the following steps. First, a wafer has at least a first portion requiring a first doping density and a second portion requiring a second doping density is provided. The first doping density is larger than the second doping density. Thereafter, the first portion is scanned by an ion beam with a first scanning parameter value, and the second portion is scanned by the ion beam with a second scanning parameter value. The first scanning parameter value can be a first scan velocity, and the second scanning parameter value can be a second scan velocity different than the first scan velocity. Alternatively, the first scanning parameter value can be a first beam current, and the second scanning parameter value can be a second beam current different than the first beam current.

Abstract translation: 提供一种用于植入晶片的离子注入机和方法，其中该方法包括以下步骤。 首先，晶片至少具有需要第一掺杂密度的第一部分，并且提供需要第二掺杂密度的第二部分。 第一掺杂密度大于第二掺杂密度。 此后，通过具有第一扫描参数值的离子束扫描第一部分，并且用第二扫描参数值用离子束扫描第二部分。 第一扫描参数值可以是第一扫描速度，并且第二扫描参数值可以是不同于第一扫描速度的第二扫描速度。 或者，第一扫描参数值可以是第一束电流，并且第二扫描参数值可以是不同于第一束电流的第二束电流。