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    SILICON-AND-GERMANIUM ETCHING
    23.
    发明公开
    SILICON-AND-GERMANIUM ETCHING 审中-公开

    公开(公告)号：US20240332027A1

    公开(公告)日：2024-10-03

    申请号：US18128036

    申请日：2023-03-29

    Applicant: Applied Materials, Inc.

    Inventor： Anchuan Wang ,  Jiayin Huang ,  Kalpana Suen

    IPC: H01L21/3065

    CPC classification number: H01L21/3065

    Abstract: Exemplary methods of semiconductor processing may include providing a first fluorine-containing precursor to a remote plasma system of a semiconductor processing chamber. The methods may include generating plasma effluents of the first fluorine-containing precursor in the remote plasma system. The methods may include providing plasma effluents of the first fluorine-containing precursor to a processing region of the semiconductor processing chamber. The methods may include providing a second fluorine-containing precursor to the processing region of the semiconductor processing chamber. A substrate including alternating layers of material may be disposed within the processing region. The alternating layers of material may include a silicon-and-germanium-containing material. The methods may include contacting the substrate with the plasma effluents of the first fluorine-containing precursor and with the second fluorine-containing precursor. The methods may include etching the silicon-and-germanium-containing material of the alternating layers of material on the substrate.

    Flow distribution plate for surface fluorine reduction
    25.
    发明授权
    Flow distribution plate for surface fluorine reduction 有权

    公开(公告)号：US10204795B2

    公开(公告)日：2019-02-12

    申请号：US15096428

    申请日：2016-04-12

    Applicant: Applied Materials, Inc.

    Inventor： Jiayin Huang ,  Lin Xu ,  Zhijun Chen ,  Anchuan Wang

    IPC: H01L21/00 ,  C23C16/00 ,  H01L21/3065 ,  H01J37/32 ,  H01L21/67

    Abstract: A method and apparatus for processing a semiconductor substrate are described herein. A process system described herein includes a plasma source and a flow distribution plate. A method described herein includes generating fluorine radicals or ions, delivering the fluorine radicals or ions through one or more plasma blocking screens to a volume defined by the flow distribution plate and one of one or more plasma blocking screens, delivering oxygen and hydrogen to the volume, mixing the oxygen and hydrogen with fluorine radicals or ions to form hydrogen fluoride, flowing hydrogen fluoride through the flow distribution plate, and etching a substrate using bifluoride. The concentration of fluorine radicals or ions on the surface of the substrate is reduced to less than about two percent.

    Silicon pretreatment for nitride removal
    26.
    发明授权
    Silicon pretreatment for nitride removal 有权

    公开(公告)号：US10128086B1

    公开(公告)日：2018-11-13

    申请号：US15792290

    申请日：2017-10-24

    Applicant: Applied Materials, Inc.

    Inventor： Jiayin Huang ,  Zhijun Chen ,  Anchuan Wang ,  Nitin Ingle

    IPC: H01L21/3065 ,  H01L21/3213 ,  H01L21/768 ,  C23C16/455 ,  H01J37/32 ,  C23C16/40 ,  C23C16/34 ,  H01L21/02

    Abstract: Exemplary methods for treating a silicon-containing substrate may include flowing plasma effluents of a hydrogen-containing precursor into a processing region of the semiconductor processing chamber. A silicon-containing substrate may be positioned within the processing region and include a trench formed through stacked layers including alternating layers of silicon nitride and silicon oxide exposing a portion of the silicon-containing substrate. The methods may include contacting the exposed portion of the silicon-containing substrate with the plasma effluents. The methods may include flowing an oxygen-containing precursor into the processing region of the semiconductor processing chamber. The methods may include contacting the exposed portion of the silicon-containing substrate with the oxygen-containing precursor. The methods may also include converting the exposed portion of the silicon-containing substrate to silicon oxide.

    SELECTIVE SiN LATERAL RECESS
    28.
    发明申请
    SELECTIVE SiN LATERAL RECESS 审中-公开

    公开(公告)号：US20180102256A1

    公开(公告)日：2018-04-12

    申请号：US15792328

    申请日：2017-10-24

    Applicant: Applied Materials, Inc.

    Inventor： Zhijun Chen ,  Jiayin Huang ,  Anchuan Wang ,  Nitin Ingle

    IPC: H01L21/311 ,  H01L21/02

    CPC classification number: H01L21/31116 ,  H01L21/0217 ,  H01L21/02323

    Abstract: Exemplary methods for laterally etching silicon nitride may include flowing a fluorine-containing precursor and an oxygen-containing precursor into a remote plasma region of a semiconductor processing chamber. The methods may include forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor and the oxygen-containing precursor. The methods may also include flowing the plasma effluents into a processing region of the semiconductor processing chamber. A substrate may be positioned within the processing region, and the substrate may include a trench formed through stacked layers including alternating layers of silicon nitride and silicon oxide. The methods may also include laterally etching the layers of silicon nitride from sidewalls of the trench while substantially maintaining the layers of silicon oxide. The layers of silicon nitride may be laterally etched less than 10 nm from the sidewalls of the trench.

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