公开(公告)号：US12261062B2

公开(公告)日：2025-03-25

申请号：US18223923

申请日：2023-07-19

Applicant: Applied Materials, Inc.

Inventor： Shu-Kwan Danny Lau ,  Toshiyuki Nakagawa ,  Zhiyuan Ye

IPC: H01L21/67 ,  B23K26/00 ,  B23K26/06 ,  B23K26/08 ,  B23K103/00 ,  F27B17/00 ,  F27D5/00 ,  F27D9/00 ,  H01L21/268 ,  H01L21/687

Abstract: Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. In one or more embodiments, a process chamber comprises a first window, a second window, a substrate support disposed between the first window and the second window, and a motorized rotatable radiant spot heating source disposed over the first window and configured to provide radiant energy through the first window.

公开(公告)号：US12196617B2

公开(公告)日：2025-01-14

申请号：US17609335

申请日：2020-06-29

Applicant: Applied Materials, Inc.

Inventor： Zuoming Zhu ,  Shu-Kwan Lau ,  Enle Choo ,  Ala Moradian ,  Flora Fong-Song Chang ,  Maxim D. Shaposhnikov ,  Bindusagar Marath Sankarathodi ,  Zhepeng Cong ,  Zhiyuan Ye ,  Vilen K. Nestorov ,  Surendra Singh Srivastava ,  Saurabh Chopra ,  Patricia M. Liu ,  Errol Antonio C. Sanchez ,  Jenny C. Lin ,  Schubert S. Chu

IPC: G01J5/00 ,  H01L21/67

Abstract: An apparatus for controlling temperature profile of a substrate within an epitaxial chamber includes a bottom center pyrometer and a bottom outer pyrometer to respectively measure temperatures at a center location and an outer location of a first surface of a susceptor of an epitaxy chamber, a top center pyrometer and a top outer pyrometer to respectively measure temperatures at a center location and an outer location of a substrate disposed on a second surface of the susceptor opposite the first surface, a first controller to receive signals, from the bottom center pyrometer and the bottom outer pyrometer, and output a feedback signal to a first heating lamp module that heats the first surface based on the measured temperatures of the first surface, and a second controller to receive signals, from the top center pyrometer, the top outer pyrometer, the bottom center pyrometer, and the bottom outer pyrometer, and output a feedback signal to a second heating lamp module that heats the substrate based on the measured temperatures of a substrate and the measured temperatures of the first surface.

公开(公告)号：US12188148B2

公开(公告)日：2025-01-07

申请号：US17131290

申请日：2020-12-22

Applicant: Applied Materials, Inc.

Inventor： Shu-Kwan Lau ,  Zhiyuan Ye ,  Richard O. Collins ,  Brian Hayes Burrows

IPC: H01L21/67 ,  C30B25/08 ,  C30B25/14

Abstract: An apparatus as disclosed herein relates to a chamber body design for use within a thermal deposition chamber, such as an epitaxial deposition chamber. The chamber body is a segmented chamber body design and includes an inject ring and a base plate. The base plate includes a substrate transfer passage and one or more exhaust passages disposed therethrough. The inject ring includes a plurality of gas inject passages disposed therethrough. The inject ring is disposed on top of the base plate and attached to the base plate. The one or more exhaust passages and the gas inject passages are disposed opposite one another. One or more seal grooves are formed in both the base plate and the inject ring to enable the inject ring and the base plate to seal to one another as well as other components within the process chamber.

公开(公告)号：US12183606B2

公开(公告)日：2024-12-31

申请号：US18406034

申请日：2024-01-05

Applicant: Applied Materials, Inc.

Inventor： Kevin Brashear ,  Ashley M. Okada ,  Dennis L. Demars ,  Zhiyuan Ye ,  Jaidev Rajaram ,  Marcel E. Josephson

IPC: C23C16/455 ,  G05D11/13 ,  H01L21/67

Abstract: A master controller identifies a flow ratio setpoint for at least one of a process gas or a carrier gas flow to a process chamber through a set of mass flow controllers. The master controller determines a flow setpoint for the at least one of the process gas or the carrier gas through the set of mass flow controllers based on the identified flow ratio setpoint. The master controller controls the at least one of the process gas flow or the carrier gas flow through each of the set of mass flow controllers according to the determined flow setpoint for each of the set of mass flow controllers and based on a back pressure reading provided by a back pressure sensor.

公开(公告)号：US12015042B2

公开(公告)日：2024-06-18

申请号：US16797807

申请日：2020-02-21

Applicant: Applied Materials, Inc.

Inventor： Papo Chen ,  Schubert Chu ,  Errol Antonio C Sanchez ,  John Timothy Boland ,  Zhiyuan Ye ,  Lori Washington ,  Xianzhi Tao ,  Yi-Chiau Huang ,  Chen-Ying Wu

IPC: H01L27/146 ,  H01L31/18

CPC classification number: H01L27/14636 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/1892

Abstract: A method of fabricating a semiconductor device includes forming an interconnect structure over a front side of a sensor substrate, thinning the sensor substrate from a back side of the sensor substrate, etching trenches into the sensor substrate, pre-cleaning an exposed surface of the sensor substrate, epitaxially growing a charge layer directly on the pre-cleaned exposed surface of the sensor substrate, and forming isolation structures within the etched trenches.

公开(公告)号：US20240145275A1

公开(公告)日：2024-05-02

申请号：US18406034

申请日：2024-01-05

Applicant: Applied Materials, Inc.

Inventor： Kevin Brashear ,  Ashley M. Okada ,  Dennis L. Demars ,  Zhiyuan Ye ,  Jaidev Rajaram ,  Marcel E. Josephson

IPC: H01L21/67 ,  G05D11/13

CPC classification number: H01L21/67253 ,  G05D11/132 ,  H01L21/67017

Abstract: A master controller identifies a flow ratio setpoint for at least one of a process gas or a carrier gas flow to a process chamber through a set of mass flow controllers. The master controller determines a flow setpoint for the at least one of the process gas or the carrier gas through the set of mass flow controllers based on the identified flow ratio setpoint. The master controller controls the at least one of the process gas flow or the carrier gas flow through each of the set of mass flow controllers according to the determined flow setpoint for each of the set of mass flow controllers and based on a back pressure reading provided by a back pressure sensor.

公开(公告)号：US11680338B2

公开(公告)日：2023-06-20

申请号：US16833352

申请日：2020-03-27

Applicant: APPLIED MATERIALS, INC.

Inventor： Brian Burrows ,  Shu-Kwan Danny Lau ,  Zhiyuan Ye

IPC: C30B25/10 ,  G02B7/182 ,  C30B25/08 ,  C23C16/52 ,  C30B25/16 ,  C23C16/44 ,  G02B7/18

CPC classification number: C30B25/10 ,  C23C16/4411 ,  C23C16/52 ,  C30B25/08 ,  C30B25/16 ,  G02B7/181 ,  G02B7/182

Abstract: Methods and apparatus for an upper reflector assembly for use in a process chamber are provided herein. In some embodiments, an upper reflector assembly for use in a process chamber includes a reflector mounting ring; and upper reflector plate coupled to the reflector mounting ring and having an upper surface and lower surface, wherein the lower surface includes a plurality of linear channels extending substantially parallel to each other across the lower surface, and wherein the upper reflector plate includes air cooling slots extending from the upper surface to the lower surface.

公开(公告)号：US10458040B2

公开(公告)日：2019-10-29

申请号：US15809088

申请日：2017-11-10

Applicant: Applied Materials, Inc.

Inventor： Paul Brillhart ,  Anzhong Chang ,  Edric Tong ,  Kin Pong Lo ,  James Francis Mack ,  Zhiyuan Ye ,  Kartik Shah ,  Errol Antonio C. Sanchez ,  David K. Carlson ,  Satheesh Kuppurao ,  Joseph M. Ranish

IPC: C23C16/40 ,  C30B25/14 ,  C30B25/08 ,  C30B25/10 ,  H01L21/67

Abstract: Embodiments provided herein generally relate to an apparatus for delivering gas to a semiconductor processing chamber. An upper quartz dome of an epitaxial semiconductor processing chamber has a plurality of holes formed therein and precursor gases are provided into a processing volume of the chamber through the holes of the upper dome. Gas delivery tubes extend from the holes in the dome to a flange plate where the tubes are coupled to gas delivery lines. The gas delivery apparatus enables gases to be delivered to the processing volume above a substrate through the quartz upper dome.

公开(公告)号：US10043666B2

公开(公告)日：2018-08-07

申请号：US15055164

申请日：2016-02-26

Applicant: Applied Materials, Inc.

Inventor： Xinyu Bao ,  Errol Antonio C. Sanchez ,  Zhiyuan Ye ,  Keun-Yong Ban

IPC: H01L21/02 ,  H01L21/67 ,  C30B25/02

Abstract: Embodiments described herein generally relate to a substrate processing system, such as an etch processing system. In one embodiment, a method of processing a substrate is disclosed herein. The method includes removing a native oxide from a surface of the substrate, baking the substrate in a pre-treatment thermal chamber such that double atomic steps are formed on the surface of the substrate, and forming an epitaxial layer on the substrate after the substrate is baked.

公开(公告)号：US20170370763A1

公开(公告)日：2017-12-28

申请号：US15194360

申请日：2016-06-27

Applicant: Applied Materials, Inc.

Inventor： Kevin M. Brashear ,  Zhiyuan Ye ,  Justin Hough ,  Jaidev Rajaram ,  Marcel E. Josephson ,  Ashley M. Okada

IPC: G01F25/00 ,  G01F1/40

Abstract: Mass flow verification systems and apparatus may verify mass flow rates of mass flow controllers (MFCs) based on choked flow principles. These systems and apparatus may include a plurality of differently-sized flow restrictors coupled in parallel. A wide range of flow rates may be verified via selection of a flow path through one of the flow restrictors based on an MFC's set point. Mass flow rates may be determined via pressure and temperature measurements upstream of the flow restrictors under choked flow conditions. Methods of verifying a mass flow rate based on choked flow principles are also provided, as are other aspects.