公开(公告)号：US11834743B2

公开(公告)日：2023-12-05

申请号：US16570317

申请日：2019-09-13

Applicant: APPLIED MATERIALS, INC.

Inventor： Alexander Lerner ,  Prashanth Kothnur ,  Roey Shaviv ,  Satish Radhakrishnan

IPC: C23C16/455

CPC classification number: C23C16/45565 ,  C23C16/4557 ,  C23C16/45525 ,  C23C16/45574

Abstract: Apparatus for supplying vaporized reactants to a reaction chamber are described herein. In some embodiments, a showerhead assembly for depositing multiple materials on a substrate includes a plurality of gas delivery portions, each gas delivery portion having an inlet, a wedge shaped body that defines a plenum, and a plurality of openings disposed on a bottom surface of the gas delivery portion, wherein each of the plenums are fluidly isolated from each other.

公开(公告)号：US11118278B2

公开(公告)日：2021-09-14

申请号：US16656026

申请日：2019-10-17

Applicant: Applied Materials, Inc.

Inventor： Ismail Emesh ,  Roey Shaviv ,  Chris Pabelico

IPC: C25D5/00 ,  C25D5/02 ,  C25D3/18 ,  C25D7/12

Abstract: Implementations of the disclosure may include methods of electroplating features formed on a semiconductor device, such as the trenches and vias formed by single or dual Damascene processes using a cobalt plating bath. The cobalt electroplating bath may contain “additive packages” or “additive systems” that include a combination of additives in certain ratios that facilitate the metal filling of high aspect ratio sub-micrometer features. Implementations of the disclosure provide new cobalt plating bath methods and chemistries and that include alkyl modified imidazoles, imidazolines, and imidazolidines suppressor compounds.

公开(公告)号：US11075165B2

公开(公告)日：2021-07-27

申请号：US16516817

申请日：2019-07-19

Applicant: APPLIED MATERIALS, INC.

Inventor： Suketu A Parikh ,  Rong Tao ,  Roey Shaviv ,  Joung Joo Lee ,  Seshadri Ganguli ,  Shirish Pethe ,  David Gage ,  Jianshe Tang ,  Michael A Stolfi

IPC: H01L23/52 ,  H01L23/528 ,  H01L21/67 ,  H01L23/532 ,  H01L21/02 ,  H01L21/321 ,  H01L21/768 ,  H01L23/522

Abstract: Methods and apparatus for creating a dual metal interconnect on a substrate. In some embodiments, a first liner of a first nitride material is deposited into at least one 1× feature and at least one wider than 1× feature, the first liner has a thickness of less than or equal to approximately 12 angstroms; a second liner of a first metal material is deposited into the at least one 1× feature and at least one wider than 1× feature; the first metal material is reflowed such that the at least one 1× feature is filled with the first metal material and the at least one wider than 1× feature remains unfilled with the first metal material; a second metal material is deposited on the first metal material, and the second metal material is reflowed such that the at least one wider than 1× feature is filled with the second metal material.

公开(公告)号：US11056277B2

公开(公告)日：2021-07-06

申请号：US16289328

申请日：2019-02-28

Applicant: APPLIED MATERIALS, INC.

Inventor： Daniel Lee Diehl ,  Alexander Lerner ,  Roey Shaviv

IPC: H01F41/34 ,  C23C14/04 ,  H01F41/18 ,  B32B3/00

Abstract: Methods and apparatus for a magnetized substrate carrier apparatus are described herein. In some embodiments, a substrate carrier apparatus includes: a carrier plate having a support surface to support a substrate, a mask assembly disposed above the support surface, wherein the mask assembly includes an annular frame and a shadow mask disposed within the annular frame, and wherein the shadow mask includes one or more openings arranged in a predetermined pattern and disposed through the shadow mask, and one or more magnets disposed on or embedded within at least one of the carrier plate and the shadow mask to create a magnetic field above the support surface.

公开(公告)号：US20200378000A1

公开(公告)日：2020-12-03

申请号：US16854893

申请日：2020-04-21

Applicant: Applied Materials, Inc.

Inventor： Alexander N. Lerner ,  Roey Shaviv ,  Prashanth Kothnur ,  Satish Radhakrishnan ,  Xiaozhou Che

IPC: C23C16/448 ,  C23C16/52 ,  C23C16/455 ,  C23C16/458

Abstract: One or more embodiments described herein generally relate to methods and systems for forming films on substrates in semiconductor processes. In embodiments described herein, a process system includes different materials each contained in separate ampoules. Each material is flowed into a separate portion of a showerhead contained within a process chamber via a heated gas line. From the showerhead, each material is flowed on to a substrate that sits on the surface of a rotating pedestal. Controlling the mass flow rate out of the showerhead and the rotation rate of the pedestal helps result in films with desirable material domain sizes to be deposited on the substrate.

公开(公告)号：US20190122923A1

公开(公告)日：2019-04-25

申请号：US16229710

申请日：2018-12-21

Applicant: Applied Materials, Inc.

Inventor： Xikun Wang ,  Jianxin Lei ,  Nitin Ingle ,  Roey Shaviv

IPC: H01L21/768 ,  H01L21/67 ,  H01L21/3213 ,  H01L21/321 ,  H01L23/532

Abstract: Exemplary methods for removing cobalt material may include flowing a chlorine-containing precursor into a processing region of a semiconductor processing chamber. The methods may include forming a plasma of the chlorine-containing precursor to produce plasma effluents. The methods may also include contacting an exposed region of cobalt with the plasma effluents. The exposed region of cobalt may include an overhang of cobalt on a trench defined on a substrate. The plasma effluents may produce cobalt chloride at the overhang of cobalt. The methods may include flowing a nitrogen-containing precursor into the processing region of the semiconductor processing chamber. The methods may further include contacting the cobalt chloride with the nitrogen-containing precursor. The methods may also include recessing the overhang of cobalt.

公开(公告)号：US10163696B2

公开(公告)日：2018-12-25

申请号：US15349460

申请日：2016-11-11

Applicant: Applied Materials, Inc.

Inventor： Xikun Wang ,  Jianxin Lei ,  Nitin Ingle ,  Roey Shaviv

IPC: H01L21/4763 ,  H01L21/285 ,  H01L21/768 ,  H01J37/34 ,  C23C14/34 ,  C23C14/14 ,  H01L21/3213 ,  H01L23/532 ,  H01L21/321 ,  H01L21/67

Abstract: Exemplary methods for removing cobalt material may include flowing a chlorine-containing precursor into a processing region of a semiconductor processing chamber. The methods may include forming a plasma of the chlorine-containing precursor to produce plasma effluents. The methods may also include contacting an exposed region of cobalt with the plasma effluents. The exposed region of cobalt may include an overhang of cobalt on a trench defined on a substrate. The plasma effluents may produce cobalt chloride at the overhang of cobalt. The methods may include flowing a nitrogen-containing precursor into the processing region of the semiconductor processing chamber. The methods may further include contacting the cobalt chloride with the nitrogen-containing precursor. The methods may also include recessing the overhang of cobalt.

公开(公告)号：US10081881B2

公开(公告)日：2018-09-25

申请号：US15270937

申请日：2016-09-20

Applicant: APPLIED Materials, Inc.

Inventor： Paul R. McHugh ,  Gregory J. Wilson ,  Roey Shaviv

IPC: C25D17/00 ,  C25D5/00 ,  C25D17/12

CPC classification number: C25D17/008 ,  C25D5/00 ,  C25D17/001 ,  C25D17/002 ,  C25D17/007 ,  C25D17/12

Abstract: An electroplating apparatus has one or more membrane tube rings which act as electric field shields, to provide advantageous plating characteristics at the perimeter of a work piece. The membrane tube rings may be filled with fluids having different conductivity, to change the shielding effect as desired for electroplating different types of substrates. The membrane tube rings may optionally be provided in or on a diffuser plate in the vessel of the apparatus.

公开(公告)号：US20180122696A1

公开(公告)日：2018-05-03

申请号：US15798168

申请日：2017-10-30

Applicant: APPLIED Materials, Inc.

Inventor： Roey Shaviv ,  Ismail T. Emesh

IPC: H01L21/768 ,  H01L23/532

CPC classification number: H01L21/76879 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76883 ,  H01L23/53209 ,  H01L23/53238

Abstract: In one embodiment of the present disclosure, a microfeature workpiece includes at least two features of two different sizes disposed in a dielectric, wherein a width of a first feature is less than or equal to 17 nm and wherein the first feature is filled with cobalt or nickel, and wherein a width of a second feature is greater than 20 nm and wherein the second feature is filled with a stack layer of cobalt or nickel and copper.

公开(公告)号：US09691660B2

公开(公告)日：2017-06-27

申请号：US15190755

申请日：2016-06-23

Applicant: APPLIED Materials, Inc.

Inventor： Roey Shaviv

IPC: H01L21/4763 ,  H01L21/44 ,  H01L29/06 ,  H01L29/40 ,  H01L21/768 ,  H01L23/522 ,  H01L21/311 ,  H01L21/321 ,  H01L21/3105 ,  H01L21/027 ,  H01L23/528 ,  H01L23/532 ,  H01L21/288

CPC classification number: H01L21/76882 ,  H01L21/0274 ,  H01L21/2885 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/3212 ,  H01L21/76802 ,  H01L21/76814 ,  H01L21/76816 ,  H01L21/76822 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/7685 ,  H01L21/76864 ,  H01L21/76871 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76897 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53266 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of forming an interconnect composed of metallized lines and vias in a workpiece includes forming metal lines in a workpiece, with the metal lines disposed in longitudinally spaced-apart line segments, the line segments spaced apart from each other end-to-end; and forming vias in a workpiece, wherein at least one end of a first formed metal line constrains one cross-sectional dimension of a second formed via, or wherein at least one end of a first formed via constrains one cross-sectional dimension of a second formed metal line.