公开(公告)号：US09837281B2

公开(公告)日：2017-12-05

申请号：US15164575

申请日：2016-05-25

Applicant: ASM IP Holding B.V.

Inventor： Bert Jongbloed ,  Dieter Pierreux ,  Werner Knaepen

IPC: H01L21/308 ,  H01L21/02 ,  H01L21/027 ,  H01L21/306 ,  H01L21/3115 ,  C23C16/455

CPC classification number: H01L21/3081 ,  C23C16/301 ,  C23C16/308 ,  C23C16/34 ,  C23C16/45527 ,  C23C16/45531 ,  C23C16/45561 ,  H01L21/02178 ,  H01L21/02205 ,  H01L21/0228 ,  H01L21/0273 ,  H01L21/0332 ,  H01L21/30604 ,  H01L21/3086 ,  H01L21/3115

Abstract: A process for depositing doped aluminum nitride (doped AlN) is disclosed. The process comprises subjecting a substrate to temporally separated exposures to an aluminum precursor and a nitrogen precursor to form an aluminum and nitrogen-containing compound on the substrate. The aluminum and nitrogen-containing compound is subsequently exposed to a dopant precursor to form doped AlN. The temporally separated exposures to an aluminum precursor and a nitrogen precursor, and the subsequent exposure to a dopant precursor together constitute a doped AlN deposition cycle. A plurality of doped AlN deposition cycles may be performed to deposit a doped AlN film of a desired thickness. The dopant content of the doped AlN can be tuned by performing a particular ratio of 1) separated exposures to an aluminum precursor and a nitrogen precursor, to 2) subsequent exposures to the dopant. The deposition may be performed in a batch process chamber, which may accommodate batches of 25 or more substrates. The deposition may be performed without exposure to plasma.

公开(公告)号：US09552979B2

公开(公告)日：2017-01-24

申请号：US13907718

申请日：2013-05-31

Applicant: ASM IP Holding B.V.

Inventor： Werner Knaepen ,  Bert Jongbloed ,  Dieter Pierreux ,  Peter Zagwijn ,  Hessel Sprey ,  Cornelius A. van der Jeugd ,  Marinus Josephus de Blank ,  Robin Roelofs ,  Qi Xie ,  Jan Willem Maes

IPC: H01L21/469 ,  H01L21/31 ,  H01L21/02 ,  C23C16/30 ,  C23C16/455 ,  C23C16/458 ,  H01L29/20

CPC classification number: H01L21/02178 ,  C23C16/303 ,  C23C16/45525 ,  C23C16/4583 ,  H01L21/0228 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003

Abstract: A process for depositing aluminum nitride is disclosed. The process comprises providing a plurality of semiconductor substrates in a batch process chamber and depositing an aluminum nitride layer on the substrates by performing a plurality of deposition cycles without exposing the substrates to plasma during the deposition cycles. Each deposition cycle comprises flowing an aluminum precursor pulse into the batch process chamber, removing the aluminum precursor from the batch process chamber, and removing the nitrogen precursor from the batch process chamber after flowing the nitrogen precursor and before flowing another pulse of the aluminum precursor. The process chamber may be a hot wall process chamber and the deposition may occur at a deposition pressure of less than 1 Torr.

Abstract translation: 公开了一种沉积氮化铝的方法。 该方法包括在分批处理室中提供多个半导体衬底，并且通过在沉积循环期间不使衬底暴露于等离子体，通过执行多个沉积循环来在衬底上沉积氮化铝层。 每个沉积循环包括将铝前体脉冲流入分批处理室，从分批处理室中除去铝前体，以及在氮气前体流动之后并且在流过铝前体的另一个脉冲之前从分批处理室中除去氮前体。 处理室可以是热壁处理室，并且沉积可以在小于1托的沉积压力下进行。

公开(公告)号：US20160307766A1

公开(公告)日：2016-10-20

申请号：US15164575

申请日：2016-05-25

Applicant: ASM IP Holding B.V.

Inventor： Bert Jongbloed ,  Dieter Pierreux ,  Werner Knaepen

IPC: H01L21/308 ,  H01L21/027 ,  H01L21/306 ,  H01L21/3115 ,  C23C16/455 ,  H01L21/02

CPC classification number: H01L21/3081 ,  C23C16/301 ,  C23C16/308 ,  C23C16/34 ,  C23C16/45527 ,  C23C16/45531 ,  C23C16/45561 ,  H01L21/02178 ,  H01L21/02205 ,  H01L21/0228 ,  H01L21/0273 ,  H01L21/0332 ,  H01L21/30604 ,  H01L21/3086 ,  H01L21/3115

Abstract: A process for depositing doped aluminum nitride (doped AlN) is disclosed. The process comprises subjecting a substrate to temporally separated exposures to an aluminum precursor and a nitrogen precursor to form an aluminum and nitrogen-containing compound on the substrate. The aluminum and nitrogen-containing compound is subsequently exposed to a dopant precursor to form doped AlN. The temporally separated exposures to an aluminum precursor and a nitrogen precursor, and the subsequent exposure to a dopant precursor together constitute a doped AlN deposition cycle. A plurality of doped AlN deposition cycles may be performed to deposit a doped AlN film of a desired thickness. The dopant content of the doped AlN can be tuned by performing a particular ratio of 1) separated exposures to an aluminum precursor and a nitrogen precursor, to 2) subsequent exposures to the dopant. The deposition may be performed in a batch process chamber, which may accommodate batches of 25 or more substrates. The deposition may be performed without exposure to plasma.

Abstract translation: 公开了一种沉积掺杂氮化铝（掺杂AlN）的工艺。 该方法包括使基底经历时间上分离的暴露于铝前体和氮前体，以在基底上形成含铝和氮的化合物。 随后将铝和含氮化合物暴露于掺杂剂前体以形成掺杂的AlN。 时间上分离的暴露于铝前体和氮前体，以及随后暴露于掺杂剂前体一起构成掺杂AlN沉积循环。 可以执行多个掺杂AlN沉积循环以沉积所需厚度的掺杂AlN膜。 掺杂AlN的掺杂剂含量可以通过对铝前体和氮前体进行1）分离的曝光的特定比例来调节，2）随后暴露于掺杂剂。 沉积可以在间歇处理室中进行，其可以容纳25个或更多个基底的批次。 可以在不暴露于等离子体的情况下进行沉积。

公开(公告)号：US12195852B2

公开(公告)日：2025-01-14

申请号：US17530161

申请日：2021-11-18

Applicant: ASM IP Holding B.V.

Inventor： Kornelius Haanstra ,  Lucian C. Jdira ,  Chris G. M. de Ridder ,  Robin Roelofs ,  Werner Knaepen ,  Herbert Terhorst

IPC: C23C16/455 ,  C23C16/458 ,  H01L21/673 ,  H01L21/687

Abstract: A substrate processing apparatus having a tube, a closed liner lining the interior surface of the tube, a plurality of gas injectors to provide a gas to an inner space of the liner, and, a gas exhaust duct to remove gas from the inner space is disclosed. The liner may have a substantially cylindrical wall delimited by a liner opening at a lower end and being substantially closed for gases above the liner opening. The apparatus may have a boat constructed and arranged moveable into the inner space via the liner opening and provided with a plurality of substrate holders for holding a plurality of substrates over a substrate support length in the inner space. Each of the gas injectors may have a single exit opening at the top and the exit openings of the plurality of injectors are substantially equally divided over the substrate support length.

公开(公告)号：US11646204B2

公开(公告)日：2023-05-09

申请号：US17352555

申请日：2021-06-21

Applicant: ASM IP Holding B.V.

Inventor： Dieter Pierreux ,  Steven van Aerde ,  Bert Jongbloed ,  Kelly Houben ,  Werner Knaepen ,  Wilco Verweij

IPC: H01L21/02 ,  H01L27/11582

CPC classification number: H01L21/0262 ,  H01L21/02532 ,  H01L27/11582

Abstract: A method for forming layers with silicon is disclosed. The layers may be created by positioning a substrate within a processing chamber, heating the substrate to a first temperature between 300 and 500° C. and introducing a first precursor into the processing chamber to deposit a first layer. The substrate may be heated to a second temperature between 400 and 600° C.; and, a second precursor may be introduced into the processing chamber to deposit a second layer. The first and second precursor may comprise silicon atoms and the first precursor may have more silicon atoms per molecule than the second precursor.

公开(公告)号：US20230002889A1

公开(公告)日：2023-01-05

申请号：US17850141

申请日：2022-06-27

Applicant: ASM IP Holding B.V.

Inventor： Dieter Pierreux ,  Werner Knaepen ,  Arjen Klaver ,  Lucian Jdira ,  Marina Mariano ,  Theodorus G.M. Oosterlaken ,  Herbert Terhorst ,  Bert Jongbloed ,  Subir Parui

IPC: C23C16/30 ,  C23C16/54 ,  C23C16/52

Abstract: A chemical vapor deposition furnace for depositing silicon nitride films, is discloses. The furnace comprising a process chamber elongated in a substantially vertical direction and a wafer boat for supporting a plurality of wafers in the process chamber. A process gas injector is provided inside the process chamber extending in a substantially vertical direction over substantially a wafer boat height and comprising a feed end connected to a source of a silicon precursor and a source of a nitrogen precursor and a plurality of vertically spaced gas injection holes to provide gas from the feed end to the process chamber. The furnace may comprise a purge gas injection system to provide a purge gas into the process chamber near a lower end of the process chamber.

公开(公告)号：US11230766B2

公开(公告)日：2022-01-25

申请号：US15940729

申请日：2018-03-29

Applicant: ASM IP Holding B.V.

Inventor： Dieter Pierreux ,  Cornelis Thaddeus Herbschleb ,  Werner Knaepen ,  Bert Jongbloed ,  Steven Van Aerde ,  Kelly Houben ,  Theodorus Oosterlaken ,  Chris de Ridder ,  Lucian Jdira

IPC: C23C16/458 ,  C23C16/56 ,  C23C16/455 ,  C23C16/48 ,  C23C16/50 ,  C23C16/44

Abstract: The invention relates to a substrate processing apparatus comprising a reaction chamber provided with a substrate rack for holding a plurality of substrates in the reaction chamber. The substrate rack may have a plurality of spaced apart substrate holding provisions configured to hold the plurality of substrates. The apparatus may have an illumination system constructed and arranged to irradiate radiation with a range from 100 to 500 nanometers onto a top surface of the substrates.

公开(公告)号：US20210348267A1

公开(公告)日：2021-11-11

申请号：US17316847

申请日：2021-05-11

Applicant: ASM IP Holding B.V.

Inventor： Charles Dezelah ,  Qi Xie ,  Petri Raisanen ,  Dieter Pierreux ,  Bert Jongbloed ,  Werner Knaepen ,  Eric James Shero

IPC: C23C16/02 ,  C23C16/44 ,  C23C16/455

Abstract: A method may comprise disposing vanadium tetrachloride in a delivery vessel; delivering the vanadium tetrachloride to a reaction chamber in fluid communication with the delivery vessel; mitigating the delivery of decomposition products of the vanadium tetrachloride to the reaction chamber; and/or applying the vanadium tetrachloride to a substrate disposed in the reaction chamber to form a layer comprising vanadium on the substrate.

公开(公告)号：US20200013629A1

公开(公告)日：2020-01-09

申请号：US16468258

申请日：2017-12-08

Applicant: ASM IP Holding B.V.

Inventor： David Kurt de Roest ,  Werner Knaepen ,  Krzysztof Kachel

IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/324

Abstract: An apparatus and a method for forming a structure within a semiconductor processing apparatus are disclosed. The apparatus includes a first reaction chamber, the first reaction chamber configured to hold at least one substrate having a first layer. The apparatus also includes a precursor delivery system configured to perform an infiltration by sequentially pulsing a first precursor and a second precursor on the substrate. The apparatus may also include a first removal system configured for removing at least a portion of the first layer disposed on the substrate while leaving an infiltrated material, wherein the infiltration and the removing at least a portion of the first layer take place within the same semiconductor processing apparatus. A method of forming a structure within a semiconductor processing apparatus is also disclosed, the method including providing a substrate for processing in a reaction chamber, the substrate having a first layer disposed on the substrate. The method may also include performing a first layer infiltration by sequentially pulsing a first precursor and a second precursor on the substrate, wherein an infiltrated material forms in the first layer from the reaction of the first precursor and the second precursor. The method may also include removing at least a portion of the first layer disposed on the substrate after performing the infiltration, wherein the infiltration and the removing at least a portion of the first layer take place with the same semiconductor processing apparatus.

公开(公告)号：US20190301014A1

公开(公告)日：2019-10-03

申请号：US15940729

申请日：2018-03-29

Applicant: ASM IP Holding B.V.

Inventor： Dieter Pierreux ,  Cornelis Thaddeus Herbschleb ,  Werner Knaepen ,  Bert Jongbloed ,  Steven Van Aerde ,  Kelly Houben ,  Theodorus Oosterlaken ,  Chris de Ridder ,  Lucian Jdira

IPC: C23C16/458 ,  C23C16/56 ,  C23C16/50 ,  C23C16/48 ,  C23C16/455

Abstract: The invention relates to a substrate processing apparatus comprising a reaction chamber provided with a substrate rack for holding a plurality of substrates in the reaction chamber. The substrate rack may have a plurality of spaced apart substrate holding provisions configured to hold the plurality of substrates. The apparatus may have an illumination system constructed and arranged to irradiate radiation with a range from 100 to 500 nanometers onto a top surface of the substrates.