公开(公告)号：USD877784S1

公开(公告)日：2020-03-10

申请号：US29651246

申请日：2018-04-13

Applicant: Applied Materials, Inc.

Designer： Dongming Iu ,  Yanjun Xia ,  Kartik Shah

公开(公告)号：US10519547B2

公开(公告)日：2019-12-31

申请号：US15000971

申请日：2016-01-19

Applicant: Applied Materials, Inc.

Inventor： Karthik Ramanathan ,  Kartik Shah ,  Nyi O. Myo ,  Schubert S. Chu ,  Jeffrey Tobin ,  Errol Antonio C. Sanchez ,  Palamurali Gajendra

IPC: C23C16/458 ,  H01L21/687 ,  H01L21/67

Abstract: Embodiments of the present disclosure generally relate to a susceptor for thermal processing of semiconductor substrates. In one embodiment, the susceptor includes a first rim, an inner region coupled to and surrounded by the first rim, and one or more annular protrusions formed on the inner region. The one or more annular protrusions may be formed on the inner region at a location corresponding to the location where a valley is formed on the substrate, and the one or more annular protrusions help reduce or eliminate the formation of the valley.

公开(公告)号：US10325763B2

公开(公告)日：2019-06-18

申请号：US15411579

申请日：2017-01-20

Applicant: Applied Materials, Inc.

Inventor： Wei W. Wang ,  Kartik Shah ,  Vishwas Kumar Pandey

IPC: C23C14/34 ,  H01J37/34 ,  C23C14/35 ,  C23C14/54

Abstract: Physical vapor deposition target assemblies and methods of cooling physical vapor deposition targets are disclosed. An exemplary target assembly comprises a flow pattern including a plurality of rows and bends fluidly connected to an inlet end and an outlet end.

公开(公告)号：US10062598B2

公开(公告)日：2018-08-28

申请号：US14698793

申请日：2015-04-28

Applicant: Applied Materials, Inc.

Inventor： Anhthu Ngo ,  Zuoming Zhu ,  Balasubramanian Ramachandran ,  Paul Brillhart ,  Edric Tong ,  Anzhong Chang ,  Kin Pong Lo ,  Kartik Shah ,  Schubert S. Chu ,  Zhepeng Cong ,  James Francis Mack ,  Nyi O. Myo ,  Kevin Joseph Bautista ,  Xuebin Li ,  Yi-Chiau Huang ,  Zhiyuan Ye

IPC: H01L21/687 ,  H01L21/673 ,  C30B25/12 ,  B05C13/02 ,  B05C13/00 ,  C23C16/458

CPC classification number: H01L21/68735 ,  B05C13/00 ,  B05C13/02 ,  C23C16/4585 ,  C30B25/12 ,  H01L21/67326 ,  H01L21/6875 ,  H01L21/68785

Abstract: In one embodiment, a susceptor for thermal processing is provided. The susceptor includes an outer rim surrounding and coupled to an inner dish, the outer rim having an inner edge and an outer edge. The susceptor further includes one or more structures for reducing a contacting surface area between a substrate and the susceptor when the substrate is supported by the susceptor. At least one of the one or more structures is coupled to the inner dish proximate the inner edge of the outer rim.

公开(公告)号：USD1071103S1

公开(公告)日：2025-04-15

申请号：US29834288

申请日：2022-04-11

Applicant: Applied Materials, Inc.

Designer： Prahallad Iyengar ,  Janisht Golcha ,  Kartik Shah ,  Chaowei Wang ,  Sanjeev Baluja

公开(公告)号：US11885021B2

公开(公告)日：2024-01-30

申请号：US17317418

申请日：2021-05-11

Applicant: Applied Materials, Inc.

Inventor： Kartik Shah ,  Vishwas Kumar Pandey ,  Kailash Pradhan ,  Sairaju Tallavarjula ,  Rene George ,  Eric Kihara Shono ,  Philip A. Bottini ,  Roger Curtis

IPC: C23C16/455 ,  H01L21/67 ,  C23C14/56 ,  C23C16/44

CPC classification number: C23C16/45591 ,  C23C14/564 ,  C23C14/566 ,  C23C16/4401 ,  C23C16/45563 ,  H01L21/67126

Abstract: A gas supply member includes a first side opposite a second side and an inner surface defining a first opening extending between the first and second sides. The gas supply member includes a third side orthogonal to the first side, the third side includes a first extension that has a face partially defining the second side, and the first extension includes a first plurality of holes extending through the first extension to the face. The gas supply member includes a fourth side opposite the third side, the fourth side includes a protrusion that has a face partially defining the second side. The gas supply member also includes a baffle disposed adjacent to the inner surface, the baffle includes a first portion extending from the inner surface and a second portion attached to the first portion, and the second portion orthogonal to the first portion and parallel to the third side.

公开(公告)号：US11818810B2

公开(公告)日：2023-11-14

申请号：US17214340

申请日：2021-03-26

Applicant: Applied Materials, Inc.

Inventor： Dhritiman Subha Kashyap ,  Amit Rajendra Sherekar ,  Kartik Shah ,  Ashutosh Agarwal ,  Eric J. Hoffmann ,  Sanjeev Baluja ,  Vijay D. Parkhe

IPC: H05B1/02 ,  H01L21/67

CPC classification number: H05B1/0233 ,  H01L21/67103

Abstract: A heater assembly having a backside purge gap formed between a top plate and a heater of the heater assembly, the top plate having a top plate wall. The top plate wall having an upper portion, a middle portion and a lower portion, the middle portion forming an incline relative to the top portion.

公开(公告)号：US11810766B2

公开(公告)日：2023-11-07

申请号：US16401871

申请日：2019-05-02

Applicant: Applied Materials, Inc.

Inventor： Karthikeyan Balaraman ,  Sathyanarayana Bindiganavale ,  Rajasekhar Patibandla ,  Balamurugan Ramasamy ,  Kartik Shah ,  Umesh M. Kelkar ,  Mats Larsson ,  Kevin A. Papke ,  William M. Lu

IPC: H01J37/32 ,  H01L21/687 ,  C23C16/34 ,  C23C14/06 ,  C23C16/06 ,  C23C14/16

CPC classification number: H01J37/32477 ,  C23C14/0641 ,  C23C14/16 ,  C23C16/06 ,  C23C16/34 ,  H01L21/68757

Abstract: Embodiments of the present disclosure are directed towards a protective multilayer coating for process chamber components exposed to temperatures from about 20° C. to about 300° C. during use of the process chamber. The protective multilayer coating comprises a bond layer and a top layer, the bond layer is formed on a chamber component to reduce the stress between the top layer and the chamber component. The reduced stress decreases or prevents particle shedding from the top layer of the multilayer coating during and after use of the process chamber. The bond layer comprises titanium, titanium nitride, aluminum, or combinations thereof, and the top layer comprises tungsten nitride.

公开(公告)号：US11807931B2

公开(公告)日：2023-11-07

申请号：US17961040

申请日：2022-10-06

Applicant: Applied Materials, Inc.

Inventor： Shu-Kwan Lau ,  Lit Ping Lam ,  Preetham Rao ,  Kartik Shah ,  Ian Ong ,  Nyi O. Myo ,  Brian H. Burrows

IPC: C23C16/40 ,  C23C16/455 ,  C23C16/46 ,  C23C16/458

CPC classification number: C23C16/45572 ,  C23C16/4583 ,  C23C16/46

Abstract: Embodiments described herein generally relate to apparatus for fabricating semiconductor devices. A gas injection apparatus is coupled to a first gas source and a second gas source. Gases from the first gas source and second gas source may remain separated until the gases enter a process volume in a process chamber. A coolant is flowed through a channel in the gas injection apparatus to cool the first gas and the second gas in the gas injection apparatus. The coolant functions to prevent thermal decomposition of the gases by mitigating the influence of thermal radiation from the process chamber. In one embodiment, the channel surrounds a first conduit with the first gas and a second conduit with the second gas.

公开(公告)号：US11735447B2

公开(公告)日：2023-08-22

申请号：US17075321

申请日：2020-10-20

Applicant: Applied Materials, Inc.

Inventor： Kartik Santhanam ,  Kartik Shah ,  Wolfgang Aderhold ,  Martin Hilkene ,  Stephen Moffatt

IPC: H01L21/67 ,  G05B19/406 ,  G06N20/00

CPC classification number: H01L21/67276 ,  G05B19/406 ,  G06N20/00 ,  G05B2219/45031

Abstract: Embodiments disclosed herein include a processing tool for semiconductor processing. In an embodiment, the processing tool comprises a chamber, and a plurality of witness sensors integrated with the chamber. In an embodiment, the processing tool further comprises a drift detection module. In an embodiment, data from the plurality of witness sensors is provided to the drift detection module as input data. In an embodiment, the processing tool further comprises a dashboard for displaying output data from the drift detection module.