公开(公告)号：US09136097B2

公开(公告)日：2015-09-15

申请号：US12266800

申请日：2008-11-07

Applicant: Chishio Koshimizu ,  Kazuki Denpoh ,  Hiromasa Mochiki

Inventor： Chishio Koshimizu ,  Kazuki Denpoh ,  Hiromasa Mochiki

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32

CPC classification number: H01J37/3244 ,  H01J37/32449

Abstract: A shower plate of a processing gas supply unit disposed in a processing chamber of a substrate processing apparatus to supply a processing gas into a processing space in the processing chamber. The shower plate is interposed between a processing gas introduction space formed in the processing gas supply unit for introduction of the processing gas and the processing space. The shower plate includes processing gas supply passageways which allow the processing gas introduction space to communicate with the processing space. The processing gas supply passageways include gas holes formed toward the processing gas introduction space and gas grooves formed toward the processing space, the gas holes and gas grooves communicating with each other. A total flow path cross sectional area of all the gas grooves is larger than a total flow path cross sectional area of all the gas holes.

Abstract translation: 处理气体供给单元的喷淋板，设置在基板处理装置的处理室中，以将处理气体供给到处理室中的处理空间。 喷淋板介于形成在处理气体供给单元中的处理气体导入空间，用于引入处理气体和处理空间。 淋浴板包括处理气体供给通道，其允许处理气体引入空间与处理空间通信。 处理气体供给通路包括朝向处理气体导入空间形成的气孔和朝向处理空间形成的气体槽，气体孔和气体槽相互连通。 所有气体槽的总流路横截面面积大于所有气孔的总流路横截面面积。

公开(公告)号：US08894806B2

公开(公告)日：2014-11-25

申请号：US12732711

申请日：2010-03-26

Applicant: Chishio Koshimizu ,  Yohei Yamazawa

Inventor： Chishio Koshimizu ,  Yohei Yamazawa

IPC: C23C16/50 ,  C23C16/00 ,  H01L21/306 ,  C23F1/00 ,  H01J37/32

CPC classification number: H01J37/32174 ,  H01J37/32091 ,  H01J37/32642

Abstract: A plasma processing apparatus includes a vacuum evacuable processing chamber; a lower electrode for mounting a target substrate in the processing chamber; a focus ring attached to the lower electrode to cover at least a portion of a peripheral portion of the lower electrode; an upper electrode disposed to face the lower electrode in parallel in the processing chamber; a processing gas supply unit for supplying a processing gas to a processing space; and a radio frequency (RF) power supply for outputting an RF power. Further, the plasma processing apparatus includes a plasma generating RF power supply section for supplying the RF power to a first load for generating a plasma of the processing gas; and a focus ring heating RF power supply section for supplying the RF power to a second load for heating the focus ring.

Abstract translation: 等离子体处理装置包括真空排气处理室; 用于将目标衬底安装在所述处理室中的下电极; 安装在下电极上的聚焦环，以覆盖下电极的周边部分的至少一部分; 设置成在所述处理室中与所述下电极平行地面对的上电极; 处理气体供应单元，用于将处理气体供应到处理空间; 以及用于输出RF功率的射频（RF）电源。 此外，等离子体处理装置包括：等离子体产生RF电源部，用于将RF功率提供给用于产生处理气体的等离子体的第一负载; 以及聚焦环加热RF电源部分，用于将RF功率提供给用于加热聚焦环的第二负载。

公开(公告)号：US08523428B2

公开(公告)日：2013-09-03

申请号：US13432617

申请日：2012-03-28

Applicant: Jun Yamawaku ,  Chishio Koshimizu ,  Tatsuo Matsudo

Inventor： Jun Yamawaku ,  Chishio Koshimizu ,  Tatsuo Matsudo

IPC: G01K13/00

CPC classification number: G01K11/14 ,  G01K5/48 ,  H01L21/67248

Abstract: A component in a processing chamber of a substrate processing apparatus, where a temperature may be accurately measured by using a temperature measuring apparatus using an interference of a low-coherence light, even when a front surface and a rear surface are not parallel due to abrasion, or the like. A focus ring used in a vacuum atmosphere and of which a temperature is measured includes an abrasive surface exposed to an abrasive atmosphere according to plasma, a nonabrasive surface not exposed to the abrasive atmosphere, a thin-walled portion including a top surface and a bottom surface that are parallel to each other, and a coating member coating the top surface of the thin-walled portion, wherein a mirror-like finishing is performed on each of the top and bottom surfaces of the thin-walled portion.

Abstract translation: 在基板处理装置的处理室中的部件，其中即使当前表面和后表面由于磨损而不平行时，也可以通过使用具有低相干光干涉的温度测量装置来精确地测量温度 ，等等。 在真空气氛中使用并且测量温度的聚焦环包括暴露于等离子体的研磨气氛的研磨表面，未暴露于研磨性气氛的非磨损表面，包括顶表面和底部的薄壁部分 表面彼此平行;以及涂覆部件，其涂覆在薄壁部分的顶表面上，其中在薄壁部分的每个顶表面和底表面上执行镜像整理。

公开(公告)号：US08506753B2

公开(公告)日：2013-08-13

申请号：US13177195

申请日：2011-07-06

Applicant: Naoki Matsumoto ,  Chishio Koshimizu ,  Akira Koshiishi

Inventor： Naoki Matsumoto ,  Chishio Koshimizu ,  Akira Koshiishi

IPC: C23F1/00 ,  H01L21/306 ,  C23C16/00

CPC classification number: H01L21/67069 ,  C23F4/00 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32532 ,  H01J2237/334

Abstract: A plasma processing apparatus includes a process container configured to accommodate a target substrate and to be vacuum-exhausted. A first electrode and a second electrode are disposed opposite each other within the process container. The first electrode includes an outer portion and an inner portion both facing the second electrode such that the outer portion surrounds the inner portion. An RF power supply is configured to apply an RF power to the outer portion of the first electrode. A DC power supply is configured to apply a DC voltage to the inner portion of the first electrode. A process gas supply unit is configured to supply a process gas into the process container, wherein plasma of the process gas is generated between the first electrode and the second electrode.

Abstract translation: 等离子体处理装置包括被配置为容纳目标基板并被抽真空的处理容器。 第一电极和第二电极在处理容器内彼此相对设置。 第一电极包括外部部分和面向第二电极的内部部分，使得外部部分围绕内部部分。 RF电源被配置为向第一电极的外部施加RF功率。 DC电源被配置为向第一电极的内部施加DC电压。 处理气体供应单元被配置为将处理气体供应到处理容器中，其中处理气体的等离子体在第一电极和第二电极之间产生。

公开(公告)号：US08404137B2

公开(公告)日：2013-03-26

申请号：US13014155

申请日：2011-01-26

Applicant: Chishio Koshimizu ,  Naoki Matsumoto

Inventor： Chishio Koshimizu ,  Naoki Matsumoto

IPC: G01R31/00

CPC classification number: H01J37/32174 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32706

Abstract: A plasma processing apparatus includes a plurality of radio-frequency power supplies for supplying radio-frequency powers having frequencies different from each other, a common feeding line for superposing radio-frequency powers supplied respectively from the plurality of radio-frequency power supplies and feeding the superposed radio-frequency power to a same radio-frequency electrode, a radio-frequency power extracting device for extracting radio-frequency powers having predetermined frequencies from radio-frequency powers fed via the feeding line, and a radio-frequency voltage detector for measuring voltages of the radio-frequency powers having the predetermined frequencies extracted by the radio-frequency power extracting device.

Abstract translation: 等离子体处理装置包括多个用于提供具有彼此不同频率的射频功率的高频电源，用于叠加从多个射频电源分别提供的射频功率的馈电线， 将叠加的射频电力叠加到同一射频电极，用于从经由馈电线馈送的射频功率提取具有预定频率的射频功率的射频功率提取装置和用于测量电压的射频电压检测器 具有由射频功率提取装置提取的预定频率的射频功率。

公开(公告)号：US08293068B2

公开(公告)日：2012-10-23

申请号：US12410943

申请日：2009-03-25

Applicant: Chishio Koshimizu ,  Shinji Himori

Inventor： Chishio Koshimizu ,  Shinji Himori

IPC: C23F1/00 ,  H01L21/306 ,  C23C16/00

CPC classification number: H01J37/32541 ,  H01J37/32091 ,  H01J37/32568 ,  H01J37/32577

Abstract: A plasma processing apparatus includes: a vacuum-evacuable processing chamber; a lower central electrode; a lower peripheral electrode surrounding the lower central electrode in an annular shape; an upper electrode provided to face the lower central electrode and the lower peripheral electrode; a processing gas supply unit for supplying a processing gas into the processing chamber; an RF power supply for outputting an RF power for generating a plasma; and a power feed conductor connected to a rear surface of the lower peripheral electrode to supply the RF power to the lower peripheral electrode. The apparatus further includes a variable capacitance coupling unit for electrically connecting the lower central electrode with at least one of the power feed conductor and the lower peripheral electrode by capacitance coupling with a variable impedance in order to supply a part of the RF power from the RF power supply to the lower central electrode.

Abstract translation: 一种等离子体处理装置，包括：真空排空处理室; 下部中心电极; 围绕下部中心电极的下部周边电极为环状; 设置成面向下中央电极和下周边电极的上电极; 处理气体供应单元，用于将处理气体供应到处理室中; RF电源，用于输出用于产生等离子体的RF功率; 以及连接到下周边电极的后表面的供电导体，以向下周边电极提供RF功率。 该装置还包括可变电容耦合单元，用于通过与可变阻抗的电容耦合来将下部中心电极与馈电导体和下部外围电极中的至少一个电连接，以便从RF提供RF功率的一部分 向下中央电极供电。

公开(公告)号：US20120176692A1

公开(公告)日：2012-07-12

申请号：US13344926

申请日：2012-01-06

Applicant: Jun Yamawaku ,  Chishio Koshimizu

Inventor： Jun Yamawaku ,  Chishio Koshimizu

IPC: G02B7/04 ,  H01L21/306

CPC classification number: H01J37/32642 ,  H01J37/32724

Abstract: There is provided a focus ring that is capable of preventing deposits from adhering to a member having a lower temperature in a gap between two members having different temperatures. A focus ring 25 is disposed to surround a peripheral portion of a wafer W in a chamber 11 of a substrate processing apparatus 10. The focus ring 25 includes an inner focus ring 25a and an outer focus ring 25b. Here, the inner focus ring 25a is placed adjacent to the wafer W and configured to be cooled; and the outer focus ring 25b is placed so as to surround the inner focus ring 25a and configured not to be cooled. Further, a block member 25c is provided in a gap between the inner focus ring 25a and the outer focus ring 25b.

Abstract translation: 提供了一种聚焦环，其能够防止沉积物粘附到具有不同温度的两个构件之间的间隙中具有较低温度的构件。 焦点环25设置成围绕基板处理装置10的腔室11中的晶片W的周边部分。聚焦环25包括内聚焦环25a和外聚焦环25b。 这里，内聚焦环25a被放置成与晶片W相邻并被配置为被冷却; 并且外聚焦环25b被放置成围绕内聚焦环25a并且被配置为不被冷却。 此外，在内聚焦环25a和外聚焦环25b之间的间隙中设置有块部件25c。

公开(公告)号：US20120145324A1

公开(公告)日：2012-06-14

申请号：US13396181

申请日：2012-02-14

Applicant: Akira Koshiishi ,  Masaru Sugimoto ,  Kunihiko Hinata ,  Noriyuki Kobayashi ,  Chishio Koshimizu ,  Ryuji Ohtani ,  Kazuo Kibi ,  Masashi Saito ,  Naoki Matsumoto ,  Manabu Iwata ,  Daisuke Yano ,  Yohei Yamazawa

Inventor： Akira Koshiishi ,  Masaru Sugimoto ,  Kunihiko Hinata ,  Noriyuki Kobayashi ,  Chishio Koshimizu ,  Ryuji Ohtani ,  Kazuo Kibi ,  Masashi Saito ,  Naoki Matsumoto ,  Manabu Iwata ,  Daisuke Yano ,  Yohei Yamazawa

IPC: H01L21/3065

CPC classification number: H01J37/32091 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/32348 ,  H01J37/3244 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32642 ,  H01J37/32706 ,  H01J37/32834 ,  H01J2237/3344 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/67069

Abstract: An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency is connected to the upper electrode. A second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber while any one of application voltage, application current, and application power from the variable DC power supply to the upper electrode is controlled, to generate plasma of the process gas so as to perform plasma etching.

Abstract translation: 一种装置包括用于支撑在处理室内相对设置的晶片的上电极和下电极。 被配置为施加具有相对较高频率的第一RF功率的第一RF电源连接到上电极。 配置为施加具有相对较低频率的第二RF功率的第二RF电源连接到下电极。 可变直流电源连接到上电极。 将处理气体供给到处理室中，同时控制来自可变直流电源到上部电极的施加电压，施加电流和施加电力中的任何一个，以产生处理气体的等离子体，以进行等离子体蚀刻。

公开(公告)号：US08182142B2

公开(公告)日：2012-05-22

申请号：US12043654

申请日：2008-03-06

Applicant: Jun Abe ,  Tatsuo Matsudo ,  Chishio Koshimizu

Inventor： Jun Abe ,  Tatsuo Matsudo ,  Chishio Koshimizu

IPC: G01J5/00 ,  G01B9/02

CPC classification number: G01J5/02 ,  G01K1/026 ,  G01K11/125

Abstract: A temperature measuring apparatus includes a light source, a first splitter, a second splitter, a reference beam reflector, an optical path length adjuster, a reference beam transmitting member, a first to an nth measuring beam transmitting member and a photodetector. The temperature measuring apparatus further includes an attenuator that attenuates the reference beam reflected from the reference beam reflector to thereby make an intensity thereof closer to an intensity of the measurement beam reflected from the temperature measurement object.

Abstract translation: 温度测量装置包括光源，第一分离器，第二分离器，参考光束反射器，光程长度调节器，参考光束传输部件，第一至第N测量光束传输部件和光电检测器。 温度测量装置还包括衰减器，衰减从参考光束反射器反射的参考光束，从而使其强度更接近于从温度测量对象反射的测量光束的强度。

公开(公告)号：US20110235056A1

公开(公告)日：2011-09-29

申请号：US13072847

申请日：2011-03-28

Applicant: Tatsuo Matsudo ,  Chishio Koshimizu

Inventor： Tatsuo Matsudo ,  Chishio Koshimizu

IPC: G01B11/28

CPC classification number: G01B9/02021 ,  G01B9/02019 ,  G01B9/02028 ,  G01B9/02071 ,  G01B9/0209 ,  G01B11/06 ,  G01B11/0675

Abstract: A wear rate measurement method includes thermally coupling a focus ring having a top surface and a bottom surface with a reference piece having a bottom surface facing a susceptor and a top surface facing the focus ring; measuring a first optical path length of a low-coherence light beam that travels forward and backward within the focus ring by irradiating the low-coherence light beam to the focus ring orthogonally to the top surface and the bottom surface thereof; measuring a second optical path length of a low-coherence light beam that travels forward and backward within the reference piece by irradiating the low-coherence light beam to the reference piece orthogonally to the top surface and the bottom surface thereof; and calculating a wear rate of the focus ring based on a ratio between the first optical path length and the second optical path length.

Abstract translation: 磨耗率测量方法包括将具有顶表面和底表面的聚焦环与具有面向基座的底表面和面向聚焦环的顶表面的参考件热耦合; 通过将低相干光束照射到与其顶表面和底面正交的聚焦环来测量在聚焦环内前后移动的低相干光束的第一光程长度; 通过将低相干光束垂直于其顶表面和底表面照射到参考件来测量在参考件内前后移动的低相干光束的第二光程长度; 以及基于所述第一光路长度和所述第二光路长度之间的比率来计算所述聚焦环的磨损率。